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At least 379 records · Page 21

Fundamental mode excitation via Joule–Thomson light expansion in nonlinear optical lattices

Under linear conditions, power injected from a single waveguide into a multi-core fiber array results in multimode propagation, progressively diminishing the spatial coherence of light. In this work, we introduce a comprehensive approach to mitigate this coherence loss by means of a nonlinear thermodynamic Joule–Thomson expansion. By leveraging the tools of optical thermodynamics, we demonstrate that as light undergoes a sudden transition from a small to a larger nonlinear optical array, it can abruptly drop its optical temperature to near-zero values. During this cooling process, light irreversibly flows into the system's fundamental mode with very high efficiency, synchronizing all elements of the lattice with the input port. We show that this nonlinear effect is highly predictable even in systems of arbitrary geometry and shape and can be controlled precisely by the initial conditions at the input of the array. In particular, for a single injection point, the reduction in optical temperature can be directly determined by the total power, irrespective of the input location.

Pyrialakos, Georgios G. (ORCID:0000000286129694)↗

Clearing a path for light through non-Hermitian media

Abstract The performance of all active photonic devices today is greatly limited by loss. Here, we show that one can engineer a low loss path in a metal-clad lossy multi-mode waveguide while simultaneously achieving high-performance active photonic devices. We leverage non-Hermitian systems operating beyond the exceptional point to enable the redistribution of losses in a multi-mode photonic waveguide. Consequently, our multi-mode waveguide offers low propagation losses for fundamental mode while other higher order modes experience prohibitively high losses. Furthermore, we show an application of this non-Hermitian waveguide platform in designing power-efficient thermo-optic phase shifters with significantly faster response times than conventional silicon-based thermo-optic phase shifters. Our device achieves a propagation loss of less than 0.02 dB μm −1 for our non-Hermitian waveguide-based phase shifters with high performance efficiency of P π ⋅ τ = 19.1 mW μs. In addition, our phase shifters have significantly faster response time (rise/fall time), τ ≈ 1.4 μs, compared to traditional silicon based thermo-optic phase shifters.

Materials Science↗

Proposed smart integrated-optical preprocessor using holographic subtraction

The paper presents a proposed integrated-optical preprocessor with a holographic subtraction. It is based on an optical analog of a set of N analog voltages formed by passing an optical plane wave, confined in an electrooptic waveguide, under a set of N electrodes to which the voltages are applied; in the limit in which diffraction is ignored, the wavefront of the emerging guided wave will have superimposed upon it N discrete phase shifts. Processors which operate upon voltages encoded in this manner are being fabricated; they include a comparator in which incoming data are compared to a holographic record of the optical analog of a reference set, and a 'smart' system based upon holographic self-subtraction, in which the processor can independently adapt to changes in background information. The preprocessor operation is described in the screening, identification, and the self-subtraction modes, and implementation of devices in an integrated optical configuration is discussed.

Verber, C. M.↗

CO2 laser waveguiding in proton implanted GaAs

Surface layers capable of supporting optical modes at 10.6 microns have been produced in n-type GaAs wafers through 300 keV proton implantation. The dominant mechanism for this effect appears to be free carrier compensation. Characterization of the implanted layers by analysis of infrared reflectivity spectra and synchronous coupling at 10.6 microns produced results in good agreement with elementary models. These results of sample characterization by infrared reflectivity and by CO2 laser waveguiding as implanted are presented and evaluated.

Jenkinson, H. A.↗

A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory

We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Kooi, J. W.↗

Cathodoluminescence of Ultrathin Twisted Ge 1–x Sn x S van der Waals Nanoribbon Waveguides

Ultrathin van der Waals semiconductors have shown extraordinary optoelectronic and photonic properties. Propagating photonic modes make layered crystal waveguides attractive for photonic circuitry and for studying hybrid light-matter states. Accessing guided modes by conventional optics is challenging due to limited spatial resolution and poor out-of-plane far field coupling. Scanning near-field optical microscopy (SNOM) can overcome these issues and can characterize waveguide modes down to tens of nm resolution, albeit for planar samples or nanostructures with moderate height variations. Electron microscopy provides atomic-scale localization also for more complex geometries, and recent advances extended the accessible excitations from interband transitions to phonons. In this work, bottom-up synthesized layered semiconductor (Ge 1-x Sn x S) nanoribbons with axial twist and deep sub-wavelength thickness are demonstrated as a platform for realizing waveguide modes, and cathodoluminescence (CL) spectroscopy is introduced as a tool to characterize them. Combined experiments and simulations show the excitation of guided modes by the electron beam and their efficient detection via photons emitted in the ribbon plane, which enables measuring key properties such as the evanescent field into the vacuum cladding with nanometer resolution. The results identify van der Waals waveguides operating in the infrared and highlight an electron microscopy-based approach for probing complex-shaped nanophotonic structures.

36 MATERIALS SCIENCE↗

Enhancement of terahertz fields in LiTaO 3 waveguides using a conical pulse front

The development of methods for the generation of strong ultrafast electromagnetic pulses in the terahertz (THz) spectral range has led to a surge of progress in nonlinear THz spectroscopy and THz control of molecular and collective responses. For spectroscopy in the 1-THz range, the submillimeter wavelengths and associated large spot sizes, large optical elements, and short distances between final focusing elements and samples can lead to cumbersome experimental setups that are incompatible with some sample environments. Here, we introduce a novel terahertz ring excitation (TREx) optical pumping geometry to generate superposing, focusing fields in planar THz waveguides made out of the electro-optic material lithium tantalate. High THz fields, >175 kV/cm, are generated and measured optically with no free-space THz propagation. The field level achieved by pumping with a sequence of concentric rings of excitation light exceeds by about 20× the result of a single cylindrically focused line of pump light that has been used routinely in previous work. The technique opens new prospects for compact waveguide-based linear and nonlinear THz spectroscopy and signal processing.

47 OTHER INSTRUMENTATION↗

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗

Gigahertz-frequency acousto-optic phase modulation of visible light in a CMOS-fabricated photonic circuit

Optical phase modulators operating at visible wavelengths are essential components for photonic technologies such as those for quantum control, communications, and laser ranging. However, they remain challenging to implement in scalable, integrated platforms capable of handling high optical powers. Here we present a visible-light, gigahertz-frequency acousto-optic phase modulator, fabricated on a 200-mm wafer in a volume CMOS foundry, that supports greater than 500 mW of optical power at 730 nm. The device combines a piezoelectric transducer and a photonic waveguide within a single, wavelength-scale structure that confines both a propagating optical mode and an electrically excitable breathing-mode mechanical resonance. By tuning the device’s geometry to optimize the optomechanical interaction, we achieve modulation depths up to 4.85 rad with 80 mW of applied microwave power at 2.31 GHz in a 2-mm-long device. This corresponds to resonant modulation figures of merit of V π = 1.32V and V π ⋅ L = 0.26V cm. To our knowledge, this is the lowest V π ever demonstrated in any acousto-optic phase modulator and represents a 15-fold reduction in V π and a 100-fold reduction in required microwave power relative to state-of-the-art modulators with high visible-wavelength power handling commonly employed in quantum control systems.

Freedman, Jacob M. [Univ. of Arizona, Tucson, AZ (↗

The waveguide laser - A review

The present article reviews the fundamental physical principles essential to an understanding of waveguide gas and liquid lasers, and the current technological state of these devices. At the present time, waveguide laser transitions span the visible through submillimeter regions of the wavelength spectrum. The introduction discusses the many applications of waveguide lasers and the wide variety of laser configurations that are possible. Section 1 summarizes the properties of modes in hollow dielectric waveguides of circular, rectangular, and planar cross section. Section 2 considers various approaches to optical feedback including internal and external mirror Fabry-Perot type resonators, hollow waveguide distributed feedback structures, and ring-resonant configurations. Section 3 discusses those aspects of molecular kinetic and laser theory pertinent to the design and optimization of waveguide gas lasers.

Degnan, J. J.↗

Integration of Highly Luminescent Lead Halide Perovskite Nanocrystals on Transparent Lead Halide Nanowire Waveguides through Morphological Transformation and Spontaneous Growth in Water

The integration of highly luminescent CsPbBr 3 quantum dots on nanowire waveguides has enormous potential applications in nanophotonics, optical sensing and quantum communications. On the other hand, CsPb 2 Br 5 nanowires have also attracted a lot of attention due to their unique water stability and controversial luminescent property. Here we first report the growth of CsPbBr 3 nanocrystals on CsPb 2 Br 5 nanowires by simply immersing CsPbBr 3 powder into pure water, CsPbBr 3-γ X γ (X = Cl, I) nanocrystals on CsPb 2 Br 5-γ X γ nanowires are then synthesized for tunable light sources. Systematic structure and morphology studies, including in-situ monitoring, revealed that CsPbBr 3 powder was first converted to CsPb 2 Br 5 microplatelets in water, followed by a morphological transformation from CsPb 2 Br 5 microplatelets to nanowires, which is a kinetic dissolution-recrystallization process controlled by electrolytic dissociation and supersaturation of CsPb 2 Br 5 . CsPbB r3 nanocrystals are spontaneously formed on CsPb 2 Br 5 nanowires when nanowires are collected from the aqueous solution. Raman spectroscopy, combined photoluminescence and SEM imaging confirm that the bright emission originates from CsPbBr 3-γ X γ nanocrystals while CsPb 2 Br 5-γ X γ nanowires are transparent waveguides. In conclusion, the intimate integration of nanoscale light sources with a nanowire waveguide is demonstrated through the observation of the wave guiding of light from nanocrystals and Fabry-Perot interference modes of the nanowire cavity.

42 ENGINEERING↗

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

Exceptional coupling in photonic anisotropic metamaterials for extremely low waveguide crosstalk

Electromagnetic coupling is ubiquitous in photonic systems and transfers optical signals from one device to the other, creating crosstalk between devices. While this allows the functionality of some photonic components such as couplers, it limits the integration density of photonic chips, and many approaches have been proposed to reduce the crosstalk. However, due to the wave nature of light, complete elimination of crosstalk between closely spaced, identical waveguides is believed to be impossible and has not been observed experimentally. Here we show an exceptional coupling that can completely suppresses the crosstalk utilizing highly anisotropic photonic metamaterials. The anisotropic dielectric perturbations in the metamaterial mutually cancel the couplings from different field components, resulting in an infinitely long coupling length. We demonstrate the extreme suppression of crosstalk via exceptional coupling on a silicon-on-insulator platform, which is compatible with a complementary metal-oxide-semiconductor process. The idea of exceptional coupling with anisotropic metamaterials can be applied to many other electromagnetic devices, and it could drastically increase the integration density of photonic chips.

Mia, Md Borhan (ORCID:0000000320851331)↗

Analysis and Optimization of a Novel Hexagonal Waveguide Concentrator for Solar Thermal Applications

This paper analyzes a novel, cost-effective planar waveguide solar concentrator design that is inspired by cellular hexagonal structures in nature with the benefits of facile installation and low operation and maintenance cost. A coupled thermal and optical analysis of solar irradiation through an ideal hexagonal waveguide concentrator integrated with a linear receiver is presented, along with a cost analysis methodology, to establish the upper limit of performance. The techno-economic model, coupled with numerical optimization, is used to determine designs that maximized power density and minimized the cost of heat in the temperature range of 100–250 °C, which constitutes more than half of the industrial process heat demand. Depending on the incident solar irradiation and the application temperature, the cost of heat for the optimal design configuration ranged between 0.1–0.27 $/W and 0.075–0.18 $/W for waveguide made of ZK7 glass and polycarbonate, respectively. A techno-economic analysis showed the potential of the technology to achieve cost as low as 80 $/m2 and 61 $/m2 for waveguide made of ZK7 glass and polycarbonate material, respectively, which is less than half the cost of state-of-the-art parabolic trough concentrators. Overall, the hexagonal waveguide solar concentrator technology shows immense potential for decarbonizing the industrial process heat and thermal desalination sectors.

14 SOLAR ENERGY↗

Measurement and analysis of periodic coupling in silicon-clad planar waveguides

Computer modeling studies indicate that planar dielectric waveguides clad with silicon exhibit a damped periodic oscillation in their attenuation and phase characteristics. The effect is due to a periodic coupling between the lossy, guided modes in the silicon film and the TE0 mode of the dielectric waveguide. Experimental confirmation of the periodic coupling for a wavelength of 632.8 nm is presented. Propagation characteristics for a wavelength of 1150 nm were investigated for application in integrated optical modulators. Frequency filtering properties of silicon-clad waveguides are also examined and it is shown that the silicon thickness controls the filter response curve.

Mcwright, G. M.↗

Photonic Switching Devices Using Light Bullets

The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.

Goorjian, Peter M.↗

Thickness-Tunable Self-Assembled Colloidal Nanoplatelet Films Enable Ultrathin Optical Gain Media

We propose and demonstrate construction of highly uniform, multilayered superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using liquid interface self-assembly. These NPLs are sequentially deposited onto a solid substrate into slabs having monolayer-precise thickness across tens of cm(2) areas. Because of near-unity surface coverage and excellent uniformity, amplified spontaneous emission (ASE) is observed from an uncharacteristically thin film having 6 NPL layers, corresponding to a mere 42 nm thickness. Furthermore, systematic studies on optical gain of these NPL superstructures having thicknesses ranging from 6 to 15 layers revealed the gradual reduction in gain threshold with increasing number of layers, along with a continuous spectral shift of the ASE peak (similar to 18 nm). These observations can be explained by the change in the optical mode confinement factor with the NPL waveguide thickness and propagation wavelength. This bottom-up construction technique for thickness-tunable, three-dimensional NPL superstructures can be used for large-area device fabrication.

Erdem, Onur↗