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At least 379 records · Page 21

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NASA NTRS1972

C-MOS array design techniques: SUMC multiprocessor system study

The current capabilities of LSI techniques for speed and reliability, plus the possibilities of assembling large configurations of LSI logic and storage elements, have demanded the study of multiprocessors and multiprocessing techniques, problems, and potentialities. Evaluated are three previous systems studies for a space ultrareliable modular computer multiprocessing system, and a new multiprocessing system is proposed that is flexibly configured with up to four central processors, four 1/0 processors, and 16 main memory units, plus auxiliary memory and peripheral devices. This multiprocessor system features a multilevel interrupt, qualified S/360 compatibility for ground-based generation of programs, virtual memory management of a storage hierarchy through 1/0 processors, and multiport access to multiple and shared memory units.

Clapp, W. A.↗

DOE OSTI2022

Device-Centric Ransomware Detection using Machine Learning-Based Memory Forensics for Smart Inverters

Ransomware attacks are the fastest-growing form of cyberattacks worldwide. Recently, ransomware attacks have targeted industrial control systems (ICSs), including power grids. Lessons learned from recent incidents in ICSs show that ransomware groups can deliver ransomware into not only the organization’s control servers, but also the operational technology (OT) devices such as smart inverters and smart grid devices. This paper proposes a machine learning (ML)- based memory forensics method enabling the detection of ransomware binaries stored in the memory of a commercial smart inverter. Device firmware binary files are extracted from a Serial Peripheral Interface (SPI) flash memory, and samples of both benign and ransomware binaries are generated by a binary manipulation method and a real-world ransomware encryption, separately. A deep transfer learning (DTL) method is used to retrain a convolutional neural network (CNN)-based ransomware detection algorithm using the generated samples. The experimental result validates that the proposed ML-based memory forensics method can accurately detect ransomware files.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

Quantum Imaging of Ferromagnetic van der Waals Magnetic Domain Structures at Ambient Conditions

Recently discovered 2D van der Waals magnetic materials, and specifically iron–germanium–telluride (Fe5GeTe2), have attracted significant attention both from a fundamental perspective and for potential applications. Key open questions concern their domain structure and magnetic phase transition temperature as a function of sample thickness and external field, as well as implications for integration into devices such as magnetic memories and logic. Here we address key questions using a nitrogen-vacancy center based quantum magnetic microscope, enabling direct imaging of the magnetization of Fe5GeTe2 at submicrometer spatial resolution as a function of temperature, magnetic field, and thickness. This quantum imaging technique provides noninvasive, high-sensitivity measurements with high spatial resolution under ambient conditions, making it particularly well suited for probing 2D magnets. We employ spatially resolved measures, including magnetization variance and cross-correlation, and find a significant spread in transition temperature yet with no clear dependence on thickness down to 15 nm. We also identify previously unknown stripe features in the optical as well as magnetic images, which we attribute to modulations of the constituting elements during crystal synthesis and subsequent oxidation. Our results suggest that the magnetic anisotropy in this material does not play a crucial role in their magnetic properties, leading to a magnetic phase transition of Fe5GeTe2 which is largely thickness-independent down to 15 nm. Our findings could be significant in designing future spintronic devices, magnetic memories, and logic with 2D van der Waals magnetic materials.

Bindu, Bindu [Hebrew University of Jerusalem, Isra↗

DOE OSTI2025

Automated Programmable Logic Controller Memory Forensics Using RGB Image Analysis and Deep Learning

The introduction of Industry 4.0 and Internet-based technologies has enhanced industrial control system operations but have inadvertently increased their vulnerabilities to cyber attacks. When an industrial control system is compromised, security analysts need to identify the root cause quickly to start the recovery process and develop mitigation strategies. Memory forensics is critical in the incident analysis process to ascertain what occurred. Approaches for analyzing the persistent memory in industrial control devices are limited and almost nonexistent for volatile memory. This chapter proposes an automated methodology for programmable logic controller memory dump analysis using computer vision and deep learning techniques. The methodology converts the sequences of bytes in a programmable logic controller memory dump to red-green-blue pixels and employs a deep learning model that learns the underlying patterns and features of pre-labeled forensic artifacts in images and segments them into distinct regions. The trained model is employed to automatically segment new memory images and identify forensic artifacts. Evaluation of the methodology on a Schneider Electric Modicon M221 programmable logic controller under code injection and code modification attacks demonstrates its ability to detect attack artifacts in memory dumps.

Asmar Awad, Rima [ORNL] (ORCID:0000000233407742)↗

NASA NTRS1994

Improved Ferroelectric Memories With Nondestructive Readout

Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.

Thakoor, Sarita↗

DOE OSTI2022

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In 2 Se 3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. Finally, the nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In 2 Se 3 -covered layer, resulted from the combinations of material absorption and scattering.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Solid-state reprogrammable analog resistive devices for electronic neural networks

The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.

Ramesham, R.↗

DOE OSTI2021

Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

With the emergence of phase change memory, where the devices experience extreme thermal gradients (~100 K/nm) during transitions between low and high resistive states, the study of thermoelectric effects at small scales becomes particularly relevant. We had earlier observed asymmetric melting of self-heated nano-crystalline silicon micro-wires, where current densities of ~10 7 A/cm 2 were forced through the wires by 1 μs, ~30 V pulses. The extreme asymmetry can be explained by the generation of considerable amount of minority carriers, transport under the electric field, and recombination downstream, a heat transfer process we termed as generation–transport–recombination, which is in opposite direction of the electronic-convective heat carried by the majority carriers. Here, we present a full semiconductor physics treatment of this carrier-lattice heat transport mechanism and the contribution of the minority carriers on the evolution of the melt–solid interface, which can be applied to various high-temperature electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Interface-Driven Chiral Magnetism in Ultrathin Metallic Ferromagnets: Towards Skyrmion Spintronics

Magnetic skyrmions are localized chiral magnetic textures in the form of nanoscale vortices or bubbles that are topologically protected from being ‘unwound’. Their topological nature gives rise to rich behaviors including ordered lattice formation, emergent electrodynamics and robust current-driven displacement at remarkably low current densities. However, magnetic skyrmions have so far been restricted to just a few materials and observed only at low temperatures, limiting the experimental accessibility and technological application of these unique topological objects. This project aimed to realize magnetic skyrmions at room temperature in a new class of engineered chiral ferromagnets that exploit broken mirror symmetry at interfaces to generate helical magnetic order. Ultrathin magnetic heterostructures were engineered and patterned into laterally-confined nanostructures in which skyrmions were stabilized, manipulated, and detected for the first time under ambient conditions. Static and dynamic properties were examined using advanced x-ray imaging to provide a fundamental understanding of topological magnetic phases. The interactions between magnetic skyrmions and electron charge and spin currents were studied to identify fundamental new physics and enable device applications. These experimental studies, supported by detailed modeling, will help launch a new subfield of skyrmion-based spintronics in which individual skyrmions can be used to encode, store, and transport information in high-performance, low power memory and logic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗

NASA NTRS1991

An electronic pan/tilt/zoom camera system

A camera system for omnidirectional image viewing applications that provides pan, tilt, zoom, and rotational orientation within a hemispherical field of view (FOV) using no moving parts was developed. The imaging device is based on the effect that from a fisheye lens, which produces a circular image of an entire hemispherical FOV, can be mathematically corrected using high speed electronic circuitry. An incoming fisheye image from any image acquisition source is captured in memory of the device, a transformation is performed for the viewing region of interest and viewing direction, and a corrected image is output as a video image signal for viewing, recording, or analysis. As a result, this device can accomplish the functions of pan, tilt, rotation, and zoom throughout a hemispherical FOV without the need for any mechanical mechanisms. A programmable transformation processor provides flexible control over viewing situations. Multiple images, each with different image magnifications and pan tilt rotation parameters, can be obtained from a single camera. The image transformation device can provide corrected images at frame rates compatible with RS-170 standard video equipment.

Zimmermann, Steve↗

DOE OSTI2022

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. Notably, these emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress towards memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.

14 SOLAR ENERGY↗

NASA NTRS1999

Omniview motionless camera orientation system

A device for omnidirectional image viewing providing pan-and-tilt orientation, rotation, and magnification within a hemispherical field-of-view that utilizes no moving parts. The imaging device is based on the effect that the image from a fisheye lens, which produces a circular image of at entire hemispherical field-of-view, which can be mathematically corrected using high speed electronic circuitry. More specifically, an incoming fisheye image from any image acquisition source is captured in memory of the device, a transformation is performed for the viewing region of interest and viewing direction, and a corrected image is output as a video image signal for viewing, recording, or analysis. As a result, this device can accomplish the functions of pan, tilt, rotation, and zoom throughout a hemispherical field-of-view without the need for any mechanical mechanisms. The preferred embodiment of the image transformation device can provide corrected images at real-time rates, compatible with standard video equipment. The device can be used for any application where a conventional pan-and-tilt or orientation mechanism might be considered including inspection, monitoring, surveillance, and target acquisition.

Zimmermann, Steven D.↗

DOE OSTI2026

Ferroelectric Fractals: Switching Mechanism of Wurtzite AlN

The advent of wurtzite ferroelectrics is enabling new ferroelectric devices for computer memory that have the potential to bypass the von Neumann bottleneck due to their robust polarization and silicon compatibility. However, the atomistic switching mechanism of wurtzites is still undetermined due to the limitations of density functional theory simulation size and experimental temporal and spatial resolution. Thus, physics-informed materials engineering to reduce coercive field and breakdown in these devices has been limited. In this work, the atomistic mechanism of domain wall migration and domain growth in aluminum nitride-based wurtzites is uncovered using molecular dynamics and Monte Carlo simulations. We reveal the anomalous switching mechanism of fast 1D single columns of atoms propagating from a slow-moving 2D fractallike domain wall. We find that the critical nucleus is a single aluminum ion that breaks its bond with one nitrogen and bonds to another nitrogen; this creates a cascade that flips atoms directly only in the same column, due to the extreme locality (sharpness) of the domain walls in wurtzites. We further show how the fractallike shape of the domain wall in the 2D plane breaks assumptions in the Kolmogorov, Avrami, and Ishibashi (KAI) model and leads to the anomalously fast switching in wurtzite structured ferroelectrics.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Rapid recovery from transient faults in the fault-tolerant processor with fault-tolerant shared memory

The Draper fault-tolerant processor with fault-tolerant shared memory (FTP/FTSM), which is designed to allow application tasks to continue execution during the memory alignment process, is described. Processor performance is not affected by memory alignment. In addition, the FTP/FTSM incorporates a hardware scrubber device to perform the memory alignment quickly during unused memory access cycles. The FTP/FTSM architecture is described, followed by an estimate of the time required for channel reintegration.

Harper, Richard E.↗

NASA NTRS1999

EXPRESS Rack Technology for Space Station

The EXPRESS rack provides accommodations for standard Mid-deck Locker and ISIS drawer payloads on the International Space Station. A design overview of the basic EXPRESS rack and two derivatives, the Human Research Facility and the Habitat Holding Rack, is given in Part I. In Part II, the design of the Solid State Power Control Module (SSPCM) is reviewed. The SSPCM is a programmable and remotely controllable power switching and voltage conversion unit which distributes and protects up to 3kW of 12OVDC and 28VDC power to payloads and rack subsystem components. Part III details the development and testing of a new data storage device, the BRP EXPRESS Memory Unit (BEMU). The BEMU is a conduction-cooled device which operates on 28VDC and is based on Boeing-modified 9GB commercial disk-drive technology. In Part IV results of a preliminary design effort for a rack Passive Damping System (PDS) are reported. The PDS is intended to isolate ISPR-based experiment racks from on-orbit vibration. System performance predictions based on component developmental testing indicate that such a system can provide effective isolation at frequencies of 1 Hz and above.

Davis, Ted B.↗

DOE OSTI2022

Electrical manipulation of skyrmions in a chiral magnet

Writing, erasing and computing are three fundamental operations required by any working electronic device. Magnetic skyrmions could be essential bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size, and high mobility. However, creating, deleting, and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been a grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is even more challenging. Here, by engineering chiral magnet Co 8 Zn 10 Mn 2 into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low current density of about 10 10 A·m -2 at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Extending SEER for Extreme Heterogeneity

Heterogeneous and multi-device nodes are increasingly common in high-performance computing and data centers, yet existing programming models often lack simple, transparent, and portable support for these diverse architectures. The main contribution of this work is the development of novel SEER capabilities to address this challenge by providing a descriptive programming model that allows applications to seamlessly leverage heterogeneous nodes across various device types. SEER uses efficient memory management and can select the proper device[s] depending on the computational cost of the applications. This is completely transparent to the programmer, thereby providing a highly productive programming environment. Integrating extreme heterogeneity into the SEER library as shown with the use of NVIDIA and AMD GPUs simultaneously allows it to expand and exploit the performance possibilities. Our analysis based on the well-known Conjugate Gradient algorithm reports accelerations above 1.5 × on computationally demanding steps of such an algorithm by using both architectures simultaneously.

Teranishi, Keita [ORNL] (ORCID:0000000166472690)↗