Magnetism and site occupancy in epitaxial Y-rich yttrium iron garnet films
Explore the source record for details and available documents.
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Explore the source record for details and available documents.
This project is a fundamental study of magnetization dynamics in nanoscale spin textures with topological properties. One example is magnetic skyrmions that form in chiral ferromagnetic material systems that lack inversion symmetry. We have concentrated on the scalable chiral magnetic metal B20 FeGe thin film that has an asymmetric exchange interaction due to non-centrosymmetric cubic lattice. While the asymmetric exchange interaction can be found at the interface of a ferromagnet and a heavy metal, manipulation of skyrmions at these interfaces is non-trivial due to pinning and it requires higher critical current. In contrast, B20 materials such as FeGe have superior material quality to offer pinning-free and low-current skyrmion motion.
Epitaxial Ni–Mn–Ga thin films had been grown on MgO (001) by DC magnetron sputtering. And the anomalous Hall effect (AHE), microstructures, magnetism, and magnetoresistance (MR) were investigated. The AHE was measured in the film of Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4} during the martensitic transformation. Meanwhile, the mechanism of the AHE was explained which indicates that the hall resistivity measured in our sample is primarily determined by AHE. The microstructures of the austenite phase and 7M martensite plates at room temperature had been observed on the film of Ni{sub 46.7}Mn{sub 31.7}Ga{sub 21.6} and Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4}, respectively. Magnetic measurements reveal that all films possessed the martensitic transformation during the heating and cooling processes. In addition, the MR showed a negative value during the martensitic transformation which is mainly due to the reduction of spin-dependent scattering.
Abstract Incorporating hydrogen into complex oxides holds promise for discovering exotic phenomena and novel functionalities by promoting couplings between ion and lattice/charge/spin/orbital degrees of freedom. Here, electrolyte gating‐driven hydrogenation is investigated in epitaxial brownmillerite SrFeO 2.5 thin films in which the hydrogenation‐induced lattice distortion is qualitatively different from its counterpart SrCoO 2.5 . The achievable lattice expansion in hydrogenated SrFeO 2.5 is weaker than in SrCoO 2.5 and primarily occurs along the normal of the stacked octahedral FeO 6 and tetrahedral FeO 4 layers. Upon the substitution of Fe with Co, the lattice expansion monotonically increases with increase of Co/Fe ratio, implying an intrinsic difference in accommodating hydrogen between Fe‐ and Co‐based brownmillerites. Moreover, a net magnetic moment in hydrogenated SrFeO 2.5 films is observed above room temperature, which gradually weakens with the increase of Co substitution, suggesting a stronger canted magnetism in Fe‐based hydrogenated brownmillerites. This work clarifies the electrolyte gating‐driven hydrogenation mechanisms in brownmillerite SrFeO 2.5 epitaxial thin films and those with Co substitution, particularly the deterministic role of Co/Fe ratio in the evolution of structure and properties upon hydrogenation.
AB 2 O 4 normal spinels with a magnetic B site can host a variety of magnetic and orbital frustrations leading to spin-liquid phases and field-induced phase transitions. Here, we report the epitaxial growth of (111)-oriented MgCr 2 O 4 thin films. By characterizing the structural and electronic properties of films grown along the (001) and (111) directions, the influence of growth orientation has been studied. Despite distinctly different growth modes observed during deposition, the comprehensive characterization reveals no measurable disorder in the cation distribution nor multivalency issue for Cr ions in either orientation. Contrary to a naive expectation, the (111) stabilized films exhibit a smoother surface and a higher degree of crystallinity than (001)-oriented films. The preference in growth orientation is explained within the framework of heteroepitaxial stabilization in connection to a significantly lower (111) surface energy. Furthermore, these findings open broad opportunities in the fabrication of two-dimensional kagome-triangular heterostructures with emergent magnetic behavior inaccessible in bulk crystals.
The effect of electron doping of EuO 1- δ thin films through oxygen vacancies ( δ = 0, 0.025, and 0.09) upon the magnetocaloric response is presented here. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce tablelike magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.
A systematic structural investigation of Fe 2 Mo 3 O 8 as a function of pressure, temperature, and magnetic field reveals that the 𝑃6 3 𝑚𝑐 space group remains robust over a wide range of conditions. No changes in the long-range crystal structure are observed for pressures up to 10 GPa, temperatures between 11 K and 300 K, and magnetic fields up to 9 T. The magnetostructural response, quantified by Δ𝑐/𝑐, is determined for magnetic fields applied transverse to the crystallographic 𝑐 axis, demonstrating strong magnetoelastic coupling. The well-known magnetic-field-induced transition is confirmed to be first order and isostructural, occurring between two distinct altermagnetic states. Importantly, this transition can also be accessed using magnetic fields applied within the 𝑎𝑏 plane. When expressed in terms of the 𝑐/𝑎 ratio, the structural evolution under pressure (0–10 GPa) maps continuously onto that observed across the full Zn substitution range in (Fe 1−𝑦 Zn 𝑦 )2 Mo 3 O 8 (0 ≤ 𝑦 ≤ 1), indicating a common underlying structural control parameter. Furthermore, these results demonstrate that the 𝑐-axis lattice parameter is the primary structural degree of freedom governing magnetic behavior under external tuning parameters. More broadly, they indicate that magnetic order in this family of complex oxides (𝐴 2 Mo 3 O 8 , 𝐴 = Co,Mn,Ni) can be systematically tuned via pressure. This tunability highlights these materials as promising platforms for controllable magnetic switching, particularly in thin films integrated with piezoelectric substrates.
Complex ferromagnetic oxides such as La 0.67 Sr 0.33 MnO 3 (LSMO) offer pathways for creating energy‐efficient spintronic devices with new functionalities. LSMO exhibits high‐temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping, and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin‐charge conversion efficiency, LSMO can be used to create robust nano‐oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device‐level spin‐pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO 3 (110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300 K to 90 K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature‐dependent influence of interfacial interactions. The generated spin current in the micro‐device is maximum at 170 K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe), and a large spin Hall angle (≈3.2%) at 170 K. Ex situ deposited LSMO/Pt bilayers demonstrate excellent dynamic response, exhibiting fourfold enhancement in signal output, eightfold reduction in damping, and a threefold reduction in linewidth as compared to the Pt/Py system. Such robust device‐level performance can pave way for energy‐efficient spintronic‐based devices.
Polaritons in metals, semimetals, semiconductors, and polar insulators can allow for extreme confinement of electromagnetic energy, providing many promising opportunities for enhancing typically weak light-matter interactions such as multipolar radiation, multiphoton spontaneous emission, Raman scattering, and material nonlinearities. These extremely confined polaritons are quasielectrostatic in nature, with most of their energy residing in the electric field. As a result, these “electric” polaritons are far from optimized for enhancing emission of a magnetic nature, such as spin relaxation, which is typically many orders of magnitude slower than corresponding electric decays. Here, we take concepts of “electric” polaritons into magnetic materials, and propose using surface magnon polaritons in negative magnetic permeability materials to strongly enhance spin relaxation in nearby emitters. Specifically, we provide quantitative examples with MnF 2 and FeF 2 , enhancing spin transitions in the THz spectral range. In this work we find that these magnetic polaritons in 100-nm thin films can be confined to lengths over 10 000 times smaller than the wavelength of a photon at the same frequency, allowing for a surprising 12 orders of magnitude enhancement in magnetic dipole transitions. This takes THz spin-flip transitions, which normally occur at timescales on the order of a year, and forces them to occur at sub-ms timescales. Our results suggest an interesting platform for polaritonics at THz frequencies, and more broadly, a way to use polaritons to control light-matter interactions.
Non-collinear spin structures in materials that combine perpendicular and in-plane magnetic anisotropies are of great technological interest for microwave and spin wave-assisted magnetization switching. [Co/Pt] multilayers are well-known perpendicular anisotropy materials that have the potential to pin the magnetization of a soft magnetic layer, such as permalloy (Py), that has in-plane anisotropy, thereby forming a magnetic exchange spring. Here we report on multilayered [Co/Pt]/Pt/Py films, where an additional ultrathin Pt spacer has been included to control the coupling between the sub-units with in-plane and perpendicular magnetic anisotropy. Vector network analyser (VNA)-ferromagnetic resonance (FMR) measurements were made to obtain a complete picture of the resonant conditions, while the dynamical response of the sub-units was probed by synchrotron-based element- and phase selective x-ray detected FMR (XFMR). For all samples, only slight pinning of the dynamic magnetization of the Py by the [Co/Pt] was noted, and the FMR results were dominated by the 50 nm thick Py layer. Out-of-plane VNA-FMR maps reveal the presence of additional modes, e.g. a perpendicular standing spin-wave (PSSW) state. However, as the magnetic field is reduced below the saturation field, the PSSW state morphs continuously through a series of canted standing spin-wave (CSSW) states into a horizontal standing spin-wave (HSSW) state. The PSSW, CSSW and HSSW states are well described using a multilayer model of the Py film. The observation of CSSW modes is of particular relevance to microwave assisted magnetic recording, where microwave excitation stimulates precession of a soft layer canted out of plane by a pulsed magnetic field.
Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.
Time-dependent Ginzburg-Landau (TDGL) theory is a phenomenological model for the dynamics of superconducting systems. Due to its simplicity in comparison to microscopic theories and its effectiveness in describing the observed properties of the superconducting state, TDGL is widely used to interpret or explain measurements of superconducting devices. Here, we introduce pyTDGL, a Python package that solves a generalized TDGL model for superconducting thin films of arbitrary geometry, enabling simulations of vortex and phase dynamics in mesoscopic superconducting devices. pyTDGL can model the nonlinear magnetic response and dynamics of multiply connected films, films with multiple current bias terminals, and films with a spatially inhomogeneous critical temperature. We demonstrate these capabilities by modeling quasi-equilibrium vortex distributions in irregularly shaped films, and the dynamics and current-voltage-field characteristics of nanoscale superconducting quantum interference devices (nanoSQUIDs).
Gold-tantalum alloy films are of interest for biomedical and magnetically-assisted inertial confinement fusion applications. However, growth mechanisms of such Au-Ta alloy films are not well understood. Here, we systematically study the effect of substrate tilt on properties of films deposited by direct current magnetron sputtering from a AuTa alloy target. Experimental data is correlated with distributions of landing energies and incident angles of sputtered and backscattered species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Results reveal that the deposition rate and film density monotonically decrease with increasing substrate tilt. Properties are similar for films with a tilt of 40° and below: films are amorphous, with an average compressive stress of 0.5 GPa, a density of 16 g/cm 3 , and electrical resistivity of 200 μΩ cm. The critical substrate tilt angle for the onset of porosity, a transition to a reduced stress state, and an increase in electrical resistivity lies between 40 and 60°. Based on Monte Carlo simulations, these changes in film properties are correlated with an increase in the average impact angle of the ballistic component of atomic flux. Implications of these results to deposition onto non-planar substrates are discussed.
In this paper, a temperature-induced valence-state transition is studied in a narrow composition range 0.2 ≤ x ≤ 0.375 of Ba 2 - x Sr x TbIrO 6 by means of x-ray and neutron powder diffraction, resonant inelastic x-ray scattering, magnetic susceptibility, electrical resistivity, and specific heat measurements. The valence-state transition involves an electron transfer between Tb and Ir leading to the valence-state change between Tb 3 + / Ir 5 + and Tb 4 + / Ir 4 + phases. This first-order transition has a dramatic effect on the lattice, transport properties, and the long-range magnetic order at low temperatures for both Tb and Ir ions. Ir 5 + ion has an electronic configuration of 5 d 4 ( J eff = 0 ), which is expected to be nonmagnetic. In contrast, Ir 4 + ion with a configuration of 5 d 5 ( J eff = 1/2) favors a long-range magnetic order. For x = 0.1 with Tb 3 + / Ir 5 + configuration to the lowest temperature (2 K) investigated in this paper, a spin-glass behavior is observed around 5 K indicating Ir 5 + ( J eff = 0 ) ions act as a spacer reducing the magnetic interactions between Tb 3 + ions. For x = 0.5 with Tb 4 + / Ir 4 + configuration below the highest temperature 400 K of this paper, a long-range antiferromagnetic order at T N = 40 K is observed highlighting the importance of Ir 4 + ( J eff = 1/2) ions in promoting the long-range magnetic order of both Tb and Ir ions. For 0.2 ≤ x ≤ 0.375, a temperature-induced valence-state transition from high-temperature Tb 3 + / Ir 5 + phase to low-temperature Tb 4 + / Ir 4 + phase occurs in the temperature range 180 K ≤ T ≤ 325 K and the transition temperature increases with x . The compositional dependence demonstrates the ability to tune the the valence state for a critical region of x that leads to a concurrent change in magnetism and structure. Furthermore, this tuning ability could be employed with suitable strain in thin films to act as a switch as the magnetism is manipulated.
The diffusive propagation of magnons in the archetypal magnetic insulator yttrium iron garnet (YIG) is being actively explored for low-power and low-loss data communication. However, operation under external magnetic fields reduces the magnon diffusion length and attenuates the voltage amplitude at measurement terminals of magnonic devices. Here, we explore the low-field and field-free regime of diffusive magnon transport in YIG films, demonstrating that the field-induced suppression of magnon diffusion length can be fully inhibited only at the zero-field limit. Even a modest field of 10 mT attenuates the nonlocal spin voltage by ~20% in an ~1 μm long transport channel. We further identify the often overlooked in-plane uniaxial magnetic anisotropy as the dominant factor governing magnon transport in the low-field regime. Using Stoner-Wohlfarth macrospin simulations, we quantify the anisotropy parameters and reveal a 10-fold enhancement at low temperatures, a key finding for field-free operation of magnonic devices under cryogenic conditions.
We investigate the ultrafast spin dynamics in an epitaxial hcp($1\bar100$) cobalt thin film. By performing pump–probe magneto-optical measurements with the magnetization along either the easy or hard magnetic axis, we determine the demagnetization and recovery time for the two axes. We observe an average of 33% slower dynamics along the easy magnetization axis, which we attribute to magneto-crystalline anisotropy of the electron–phonon coupling, supported by our ab initio calculations. This points toward an unambiguous and previously undisclosed role of anisotropic electron–lattice coupling in ultrafast magnetism.
Spin-wave transport along a waveguide structure with disturbed translational symmetry has been investigated. A semiring portion of a magnon microwaveguide has been made of a YIG film. It has been shown that one can control the dynamic magnetization spatial distribution by varying the magnetic biasing angle in the microwaveguide plane. Under such conditions, the transmission coefficient of standing waves changes noticeably. The structure suggested in this paper allows the rotation of spin-wave signals in an irregular configuration under the conditions of surface magnetostatic wave propagation. This effect may be used in planar magnon networks.