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The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide
The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.
Hall current effect on tearing mode instability
From a linear 2-D eigenmode analysis, it is found that the Hall current effect on collisional tearing mode instability becomes important for the thin magnetic reversal layer whose width is comparable to the ion inertia length; Hall currents produce a three-dimensional field structure and increase the reconnection (growth) rate. Since the magnetaic reversal layer widths both in the magnetopause and in the magnetotail are reported to become as thin as the ion inertial length (several hundred km) when the reconnection process is supposed to occur, the Hall current effect may explain the appearance of the dawn-dusk component of the magnetic field in the magnetotail reconnection region.
Two-fluid theory of composite bosons and fermions and the quantum Hall proximity effect
Here we propose a two-fluid description of fractional quantum Hall systems, in which one component is a condensate of composite bosons and the other a Fermi liquid formed by composite fermions (or simply electrons). We employ the theory to model the interface between a fractional quantum Hall liquid and a (composite) Fermi liquid metal, where we find a penetration of quantum Hall condensate into the metallic region reminiscent of the proximity effect in superconductor-metal interfaces. We also find a novel and physically reasonable set of gapped quasielectron and neutral modes in fractional quantum Hall liquids.
Large spin-to-charge conversion in ultrathin gold-silicon multilayers
Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.
Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torque produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.
Optical conductivity of multi-Weyl node semimetals due to electromagnetic and axial pseudogauge fields
Here, we compute the optical conductivity of a multi-Weyl semimetal in the presence of electromagnetic and axial fields. In the first part of the paper we use a U(1) gauge field to compute the current of a multi-Weyl semimetal. The current is used in the computation of the optical conductivity within the Kubo-Matsubara formalism. We consider a multi-Weyl semimetal with two nodal points in the z-direction. The multi-Weyl semimetal has a width D in the transverse direction which is smaller than the length L in the longitudinal direction. Due to the width D we replace the model by a sum of transverse modes in 1+1 dimensions. We then regularize the model in 1+1 dimensions. The nodal points are responsible for a constant axial field and a static anomalous Hall effect. In the second part we study the effect of dynamic axial fields. An elastic deformation couples to the two electronic chiralities, and represents the axial pseudogauge field $\vec{a}$ 5 . As a consequence, the system is excited by two kinds of field, the electromagnetic one and the axial srain field. For a Weyl system this is represented by the triangle diagram, which is responsible for the anomalous Hall effect. We can obtain the anomalous Hall effect also by a chiral transformation in 1+1 dimensions using regularization. The chiral transformation modifies the path integration measure and is the source of the induced anomalous Hall effect. The latter is controlled by a combination of strain waves and electromagnetic fields.
Unconventional Hall response in the quantum limit of HfTe 5
Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe 5 , adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.
Growth, characterization, and Chern insulator state in MnBi 2 Te 4 via the chemical vapor transport method
As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.
Magnetic Analog Random-Access Memory
Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.
MPD work at MIT
MPD work at MIT is presented in the form of the view-graphs. The following subject areas are covered: the MIT program, its goals, achievements, and roadblocks; quasi one-dimensional modeling; two-dimensional modeling - transport effects and Hall effect; microscopic instabilities in MPD flows and modified two stream instability; electrothermal stability theory; separation of onset and anode depletion; exit plane spectroscopic measurements; phenomena of onset as performance limiter; explanations of onset; geometry effects on onset; onset at full ionization and its consequences; relationship to anode depletion; summary on self-field MPD; applied field MPD - the logical growth path; the case for AF; the challenges of AF MPD; and recommendations.
Nonvolatile random access memory
A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.
Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures
Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO 3 /La 0.42 Ca 0.58 MnO 3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. Here, we have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.
Disorder, interactions, and their interplay in novel narrow-gap Dirac materials and Weyl semimetals
Progress of the modern day condensed matter physics is to a large extent driven by the synthesis of new materials, advances in their experimental characterization and theoretical description. Recent discoveries of novel gapless Weyl semimetals, such as NaBi,CdAs, and BiTe-based films, in which magnetic dopants essentially suppress the gap, have added to the family of graphene and topological insulators actively investigated over the past decade. With the field of novel semimetals rapidly maturing, its focus necessarily shifts from demonstrations of the feasibility of such materials to their quantitative characterization. While the transport and optical properties of graphene and topological insulators are well captured within the picture of free non-interacting electrons, gapless 3D Weyl semimetals and narrow-gap 2D semiconductors with Dirac spectrum are known to be extremely susceptible to disorder and electron-electron interactions. This susceptibility obscures the manifestations of nontrivial band structure -- like quantum anomalous Hall effect -- of the new topological materials. Among particular projects to be addressed are: 1) optical conductivity of 3D gapless Dirac fermions in the presence of smooth disorder, 2) interplay of disorder and Coulomb interactions in the spectral properties of such fermions, 3) formation and structure of the impurity band with Coulomb supercritical clusters, 4) Coulomb interaction-driven renormalization of the electron spectrum and of the transport response in the presence of strong magnetic field, 5) instanton approach to the disorder-induced fluctuation states in zero-gap 3D materials, and 6) the role of disorder in quantum anomalous Hall effect. The proposal relies upon the investigators' previous broad expertise in interacting and disordered electron systems. The methods to be employed include perturbative diagrammatic technique, non-perturbative instanton and self-consistent approximations, hydrodynamics of electron liquid. Both analytical as well as numerical approaches are to be employed. The anticipated broader outcome of the proposal includes gaining an in-depth understanding of the interplay of the disorder and interactions under the conditions when this interplay has the most dramatic impact on observables. Traditionally, interaction effects are among the most challenging and interesting problems of condensed matter physics. Similarly, disordered systems typically present very difficult but extremely rich problems in the description of various materials. Importantly, understanding the spectral and transport properties of such materials not only presents the fundamental objective, but is also of particular interest for many applications, such as computation, memory, optics, plasmonics. In particular realization of the quantum anomalous Hall effect may lead to the development of low-power-consumption electronics. Indeed, a major constraint for practical use of the quantum Hall effect is limited by the requirement of the quantizing magnetic field. At the same time, the quantum anomalous Hall effect samples exhibit non-dissipative edge quantum transport in a zero magnetic field.
Development of a High-Propellant Throughput Small Spacecraft Electric Propulsion System to Enable Lower Cost NASA Science Missions
This paper describes recent progress at the NASA Glenn Research Center (GRC) in the development and demonstration of an integrated high-propellant throughput small spacecraft electric propulsion (HT-SSEP) system based on a Hall-effect thruster. A center-mounted cathode and an innovative magnetic circuit topology were implemented in the design of the Hall-effect thruster to achieve high-propellant throughput, high performance, and efficient packaging. To minimize technical risk, the HT-SSEP development approach sought to limit design features and materials to those with a clear path-to-flight. A propellant throughput capability of greater than 100 kg at a minimum thruster efficiency of 50% was targeted. The proof-of-concept NASA-H64M laboratory model (LM) thruster was designed, fabricated, and tested at GRC in fiscal year 2018. The thruster development leveraged heritage Hall-effect thruster design and manufacturing processes wherever appropriate. Recent NASA advances in Hall-effect thruster technology were also leveraged. A scalable discharge power supply (DPS) capable of powering the H64M-LM was developed, then demonstrated as part of an integrated system test. The DPS uses commercial off-the-shelf components with spaceflight equivalents. A keeper supply with DC ignitor was breadboarded, then demonstrated with a laboratory cathode. Finally, feed system trade studies were performed to ascertain what feed system architecture might be appropriate for an HT-SSEP system. This paper details the motivations for the project, the development approach, the chosen sub-system architectures, design considerations, and test results.
Development of a High-Propellant Throughput Small Spacecraft Electric Propulsion System to Enable Lower Cost NASA Science Missions
This paper describes recent progress at the NASA Glenn Research Center (GRC) in the development and demonstration of an integrated high-propellant throughput small spacecraft electric propulsion (HT-SSEP) system based on a Hall-effect thruster. A center-mounted cathode and an innovative magnetic circuit topology were implemented in the design of the Hall-effect thruster to achieve high-propellant throughput, high performance, and efficient packaging. To minimize technical risk, the HT-SSEP development approach sought to limit design features and materials to those with a clear path-to-flight. A propellant throughput capability of greater than 100 kg at a minimum thruster efficiency of 50% was targeted. The proof-of-concept NASA-H64M laboratory model (LM) thruster was designed, fabricated, and tested at GRC in fiscal year 2018. The thruster development leveraged heritage Hall-effect thruster design and manufacturing processes wherever appropriate. Recent NASA advances in Hall-effect thruster technology were also leveraged. A scalable discharge power supply (DPS) capable of powering the H64M-LM was developed, then demonstrated as part of an integrated system test. The DPS uses commercial off-the-shelf components with spaceflight equivalents. A keeper supply with DC ignitor was breadboarded, then demonstrated with a laboratory cathode. Finally, feed system trade studies were performed to ascertain what feed system architecture might be appropriate for an HT-SSEP system. This paper details the motivations for the project, the development approach, the chosen sub-system architectures, design considerations, and test results.
Development of a High-Propellant Throughput Small Spacecraft Electric Propulsion System (HT-SSEP) to Enable Lower Cost NASA Science Missions
Discusses progress at the NASA Glenn Research Center (GRC) in the development and demonstration of an integrated high-propellant throughput small spacecraft electric propulsion (HT-SSEP) system based on a Hall-effect thruster. A center-mounted cathode and an innovative magnetic circuit topology were implemented in the design of the Hall-effect thruster to achieve high-propellant throughput, high performance, and efficient packaging. To minimize technical risk, the HT-SSEP development approach sought to limit design features and materials to those with a clear path-to-flight. A propellant throughput capability of greater than 100 kilograms at a minimum thruster efficiency of 50 percent was targeted. The proof-of-concept NASA-H64M laboratory model (LM) thruster was designed, fabricated, and tested at GRC in fiscal year 2018. The thruster development leveraged heritage Hall-effect thruster design and manufacturing processes wherever appropriate. Recent NASA advances in Hall-effect thruster technology were also leveraged. A scalable discharge power supply (DPS) capable of powering the H64M-LM was developed, then demonstrated as part of an integrated system test. The DPS uses commercial off-the-shelf components with spaceflight equivalents. A keeper supply with DC ignitor was breadboarded, then demonstrated with a laboratory cathode. Finally, feed system trade studies were performed to ascertain what feed system architecture might be appropriate for an HT-SSEP system. This paper details the motivations for the project, the development approach, the chosen sub-system architectures, design considerations, and test results.
THz-range Faraday rotation in the Weyl semimetal candidate Co 2 TiGe
The Co 2 family of ferromagnetic Heusler alloys has attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is Co 2 TiGe. Recently, high-quality molecular beam epitaxy-grown thin films of Co 2 TiGe have become available. In this work, we present a THz-range measurement of MBE-grown Co 2 TiGe films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band-structure calculations showing that the principal contribution to the anomalous Hall effect in this material stems from the Berry curvature of the material. Overall, our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.