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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Optical, thermal, and electrical performance of low-CR solar arrays

This paper describes the analysis and testing of a photovoltaic low-CR concentrator shaped like a truncated pyramid with an aperture of 0.5 m on a side and a geometric concentration ratio of six. The truncated base plane is covered by either silicon (Si) or gallium arsenide (GaAs) solar cells. Ray-trace analysis of the concentrator predicts a peak optical efficiency of 0.77, which falls off only gradually with pointing error. A coupled thermal-electrical analysis of the system shows that the moderately nonuniform illumination produced by the concentrator does not result in significant mismatch losses, provided the solar cells are connected in parallel groups. The results of ground tests involving a full-scale prototype concentrator conform well with theoretical predictions.

French, E. P.↗
NASA NTRS1983

The growth of materials processing in space - A history of government support for new technology

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

Mckannan, E. C.↗
NASA NTRS1985

Fast Clock Recovery for Digital Communications

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Tell, R. G.↗
NASA NTRS1985

Spectrophotovoltaic Power Generation

Optical Components of spectrophotovoltaic system concentrate light from Sun and redirect short-wavelength portion of spectrum to solar cell having large gap in energy band (gallium arsenide cell). Longer-wavelength portion of spectrum passes through beam splitter to cell with smaller gap in energy band (silicon band). Available energy in Sunlight thus exploited more fully and, improvements in energy-conversion efficiency possible.

Knowles, G.↗
NASA NTRS1985

Tests of Low-Concentration-Ratio Photovoltaic Elements

Report describes performance measurements on elements of low-concentrationratio solar arrays (LCRSA's) employing silicon and gallium arsenide photovoltaic cells. Measurements intended to verify predictions of performance based on mathematical models. Measured and predicted values found to agree closely for both normal and off-normal pointing of array toward Sun.

Mills, M. W.↗
NASA NTRS1984

Trends in Space Photovoltaic Technology

The current status of silicon and gallium arsenide (GaAs) solar cell technology is described, and anticipated near and far term projections of photovoltaic cell performance are provided. It is shown that current ultrathin silicon and near term GaAs solar cells provide substantial enhancement of planar solar array performance. The advantages of utililizing GaAs cells in high concentration arrays is discussed. Evidence is provided to support the view that photovoltaic offers a viable means of supporting long term space objectives.

Scott-Monck, J. A.↗
NASA NTRS1985

Determination of the mobility profile in GaAs-MESFETs

A process for measuring charge carrier mobility for gallium-arsenide metal semiconductor field effect transistors is described in an attempt to optimize the relationship between this factor and production. The measuring procedure allows an actual determination of local mobility in the channel. The physical basis for the process and features of the measuring room are outlined. The measuring technique is described and recommendations are made for setting measuring parameters.

Prost, W.↗
NASA NTRS1984

GaAs and 3-5 compound solar cells status and prospects for use in space

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

Flood, D. J.↗
NASA NTRS1984

Activities of the Solid State Physics Research Institute

Three research programs are reviewed. These programs are muon spin rotation, studies of annealing in gallium arsenide and Hall effect studies in semiconductors. The muon spin rotation work centers around the development of a facility at the Alternating Gradient Synchrotron of BNL. Studies of annealing in GaAs concerns itself with the measurement of depolarization in GaAs. The Hall effect studies of proton damaged semiconductors provide new information on the nature of defects and dislocations in GaAs.

Source record↗
NASA NTRS1984

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

Source record↗
NASA NTRS1985

Thermionic photovoltaic energy converter

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Chubb, D. L.↗
NASA NTRS1986

Low-Concentration-Ratio Solar-Cell Arrays

Paper presents design concept for mass-producible arrays of solar electric batteries and concentrators tailored to individual requirements. Arrays intended primarily for space stations needing about 100 kW of power. However, modular, lightweight, compact, and relatively low-cost design also fulfill requirements of some terrestrial applications. Arrays built with currently available materials. Pultrusions, injectionmolded parts, and composite materials used extensively to keep weight low. For added flexibility in design and construction, silicon and gallium arsenide solar-cell panels interchangeable.

Biss, M. S.↗
NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗
NASA NTRS1986

Photoelectronic Monitor of Motion Sickness

Instrument includes gallium arsenide light-emitting diode (LED) and silicon phototransistor with infrared filter, all cast in single plastic housing. Housing attached to subject's face with transparent doublesided adhesive tape. LED directs pulses of infrared light to skin, which reflects them to phototransistor. Phototransistor produces signal that is processed by external circuits to yield plot of infrared reflectance with time. External circuits temperature-compensated and respond only to pulsed component of detector output, rejecting those components caused by stray light. Circuits also extract blood-volume pulse amplitude and heart rate.

Oman, C. M.↗
NASA NTRS1985

Test results for 20-GHz GaAs FET spacecraft power amplifier

Test were conducted to measure the performance of the 20-GHz solid state, proof-of-concept amplifier. The amplifier operates over the 17.7 to 20.2-GHz frequency range and uses high power gallium arsenide field effect transistors. The amplifier design and test methods are briefly described. NASA and contractor performance data are compared.

Shalkhauser, K. A.↗
NASA NTRS1985

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Bhasin, K. B.↗
NASA NTRS1985

Design, performance investigation and delivery of a miniaturized Cassegrainian concentrator solar array

A miniaturized Cassegrainian concentrator (MCC) solar array concept is being developed with the objective of significantly reducing the recurring cost of multikilowatt solar arrays. The desired cost reduction is obtained as a result of using very small high efficiency solar cells in conjunction with low-cost optics. In the MCC single element concept and panel concept, incident solar radiation is reflected from a primary parabolic reflector to a secondary hyperbolic reflector and finally to a 4-millimetr diameter solar cell. A light catcher cone is used to improve off-axis performance. An element is approximately 13-millimeters thick which permits efficient launch stowage of the concentrator system panels without complex optical component deployments or retractions. The MCC elements are packed in bays within graphite epoxy frames and are electrically connected into appropriate series-parallel circuits. A MCC single element with a 21 sq cm entrance aperture and a 20 percent efficient, 0.25 sq cm gallium arsenide solar cell has the same power output as 30-sq cm of 11-percent efficiency (at 68 C) silicon solar cells. The MCC concept provides the potential for a significant reduction in array cost due to a 99 percent reduction in required cell area and a 30 percent reduction in array area relative to planar array of equivalent power.

Patterson, R. E.↗
NASA NTRS1985

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency.

Desalvo, G. C.↗