Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GaTe”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Reactive oxygen species control protein degradation at the mitochondrial import gate

While reactive oxygen species (ROS) have long been known to drive aging and neurodegeneration, their persistent depletion below basal levels also disrupts organismal function. Cells counteract loss of basal ROS via the reductive stress response, but the identity and biochemical activity of ROS sensed by this pathway remain unknown. Here, we show that the central enzyme of the reductive stress response, the E3 ligase Cullin 2-FEM1 homolog B (CUL2 FEM1B ), specifically acts at mitochondrial TOM complexes, where it senses ROS produced by complex III of the electron transport chain (ETC). ROS depletion during times of low ETC activity triggers the localized degradation of CUL2 FEM1B substrates, which sustains mitochondrial import and ensures the biogenesis of the rate-limiting ETC complex IV. As complex III yields most ROS when the ETC outpaces metabolic demands or oxygen availability, basal ROS are sentinels of mitochondrial activity that help cells adjust their ETC to changing environments, as required for cell differentiation and survival.

FEM1B↗
DOE OSTI2024

Commissioning a time-gated camera for fast neutron beamline spatial-energy characterization at LANSCE-WNR spallation source

An energy-resolved fast neutron beam imaging diagnostic has been successfully commissioned at the Weapons Neutron Research (WNR) spallation source within the Los Alamos Neutron Science Center (LANSCE) facility. This diagnostic replaces the existing analog phosphor image plates, which integrate across all neutron energies, as well as other particles, with a near-real-time energy-sensitive imaging capability. The system uses a fast plastic scintillator coupled with an intensified CCD camera. Specifically, the Teledyne Pi-MAX4 camera is coupled with either a 4 mm thick Eljen (EJ) 204 or 228 plastic scintillator. These scintillators are most sensitive to the fast neutrons (0.8-800 MeV) directly from the spallation source rather than low energy background radiation. Experimentally, these plastic scintillators were shown to have sufficiently fast decay to differentiate the bright gamma flash from the spallation neutrons. The spatial resolution is dominated by neutron beam divergence, with minimal additional contributions from scatter and light divergence. The system successfully resolved changes in neutron beam characteristics caused by intentional proton steering variations. Additionally, simulations of scintillator light yield as a function of thickness conducted using PHITS (with Scinful-QMD package) found that increasing scintillator thickness from 4 mm to 6 or 8 mm could potentially increase brightness ~ 3x. This may be explored if there is a need to reduce image acquisition time from several minutes to under one minute.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of “all-2D” vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Broadening the Gas Separation Utility of Monolayer Nanoporous Graphene Membranes by an Ionic Liquid Gating

Ultrathin two-dimensional (2D) monolayer atomic crystal materials offer great potential for extending the field of novel separation technology due to their infinitesimal thickness and mechanical strength. One difficult and ongoing challenge is to perforate the 2D monolayer material with subnanometer pores with atomic precision for sieving similarly sized molecules. Here, we demonstrate the exceptional separation performance of ionic liquid (IL)/graphene hybrid membranes for challenging separation of CO 2 and N 2 . Notably, the ultrathin ILs afford dynamic tuning of the size and chemical affinity of nanopores while preserving the high permeance of the monolayer nanoporous graphene membranes. The hybrid membrane yields a high CO 2 permeance of 4000 GPU and an outstanding CO 2 /N 2 selectivity up to 32. Finally, this rational hybrid design provides a universal direction for broadening gas separation capability of atomically thin nanoporous membranes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗