SEARCH · Engineering Papers
Results for “Ga”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Crystallization, Phase Stability, Microstructure, and Chemical Bonding in Ga 2 O 3 Nanofibers Made by Electrospinning
Not Available
Ultralow Thermal Conductivity in Diamondoid Structures and High Thermoelectric Performance in (Cu 1– x Ag x )(In 1– y Ga y )Te 2
Not Available
Composition-Defined Optical Properties and the Direct-to-Indirect Transition in Core–Shell In 1– x Ga x P/ZnS Colloidal Quantum Dots
Not Available
Isolated Pt Atoms Stabilized by Ga 2 O 3 Clusters Confined in ZSM-5 for Nonoxidative Activation of Ethane
Not Available
Oxidized sulfur-rich arc magmas formed porphyry Cu deposits by 1.88 Ga
Most known porphyry Cu deposits formed in the Phanerozoic and are exclusively associated with moderately oxidized, sulfur-rich, hydrous arc-related magmas derived from partial melting of the asthenospheric mantle metasomatized by slab-derived fluids. Yet, whether similar metallogenic processes also operated in the Precambrian remains obscure. Here we address the issue by investigating the origin, fO 2 , and S contents of calc-alkaline plutonic rocks associated with the Haib porphyry Cu deposit in the Paleoproterozoic Richtersveld Magmatic Arc (southern Namibia), an interpreted mature island-arc setting. We show that the ca. 1886–1881 Ma ore-forming magmas, originated from a mantle-dominated source with minor crustal contributions, were relatively oxidized (1–2 log units above the fayalite-magnetite-quartz redox buffer) and sulfur-rich. These results indicate that moderately oxidized, sulfur-rich arc magma associated with porphyry Cu mineralization already existed in the late Paleoproterozoic, probably as a result of recycling of sulfate-rich seawater or sediments from the subducted oceanic lithosphere at that time.
Design and predict tetragonal van der Waals layered quantum materials of MPd5I2 (M=Ga, In and 3d transition metals)
Not Available
Rapid screening of molecular beam epitaxy conditions for monoclinic (In x Ga 1− x ) 2 O 3 alloys
High-throughput MBE with cyclical growth and in situ etch increases experimental throughput by approximately 6× and substrate utilization by >40×.
Origin of photoelectrochemical CO 2 reduction on bare Cu(In,Ga)S 2 (CIGS) thin films in aqueous media without co-catalysts
Photoelectrochemical (PEC) CO 2 reduction (CO 2 R) directly on chalcogenide semiconductor surface in an aqueous environment.
Bypassing sulfides: comparing the morphology and performance of solution processed Cu(In,Ga)Se 2 films prepared via two selenide molecular precursor routes
Solution-processing of thin-film photovoltaics offers an alternative to vacuum-deposition based approaches. The amine–thiol reactive solvent system has become a focal point for the solution-processing of chalcogenide species, owing to the convenience of precursor preparation and comparatively high performance of prepared devices. Selenide species prepared via the amine–thiol route typically progress through a sulfide intermediate phase, and as such are commonly afflicted with sulfur and carbon impurities along- side the presence of a carbonaceous fine-grained layer. Here, two routes of preparing films directly to a selenide phase are examined; first by the co-dissolution of selenium in an amine–thiol solution and second via the novel use of reactive alkylammonium polyselenides. Lamella are cut from these selenide precursor films and final devices, and STEM-EDX and TEM are used to characterize film morphology and secondary phases. A champion device efficiency of 11.2% is reported for the novel polyselenide route, and clear paths of improvement are identified.
GA-NIFS and EIGER: A merging quasar host at z = 7 with an overmassive black hole
The James Webb Space Telescope is revolutionising our ability to understand the host galaxies and local environments of high-z quasars. Here we obtain a comprehensive understanding of the host galaxy of the z = 7.08 quasar J1120+0641 by combining NIRSpec integral field spectroscopy with NIRCam photometry of the host continuum emission. Our emission-line maps reveal that this quasar host is undergoing a merger with a bright companion galaxy. The quasar host and the companion have similar dynamical masses of ∼10 10 M ⊙ , suggesting that this is a major galaxy interaction. Through detailed quasar subtraction and SED fitting using the NIRCam data, we obtained an estimate of the host stellar mass of M ∗ = (3.0 −1.4 +2.5 ) × 10 9 M ⊙ , with M ∗ = (2.7 −0.5 +0.5 ) × 10 9 M ⊙ for the companion galaxy. Using the Hβ Balmer line, we estimated a virial black hole mass of M BH = (1.9 −1.1 +2.9 ) × 109 M ⊙ . Thus, J1120+0641 has an extreme black hole–stellar mass ratio of M BH /M ∗ = 0.63 −0.31 +0.54 , which is ∼3 dex larger than expected by the local scaling relations between black hole and stellar mass. J1120+0641 is powered by an overmassive black hole with the highest reported black hole–stellar mass ratio in a quasar host that is currently undergoing a major merger. These new insights highlight the power of JWST for measuring and understanding these extreme first quasars.
Impact of UV-induced ozone and low-energy Ar + -ion cleaning on the chemical structure of Cu(In,Ga)(S,Se) 2 absorber surfaces
Dry buffer layer deposition techniques for chalcopyrite (CIGSSe)-based thin-film solar cells lack the surface-cleaning characteristics of the commonly used CdS or Zn(O,S) wet-chemical bath deposition. Here, a UV-induced ozone and/or a low-energy Ar + -ion treatment could provide dry CIGSSe surface cleaning steps. To study the impact of these treatments, the chemical surface structure of a CIGSSe absorber is investigated. For this purpose, a set of surface-sensitive spectroscopic methods, i.e., laboratory-based x-ray photoelectron spectroscopy and x-ray-excited Auger electron spectroscopy, is combined with synchrotron-based soft x-ray emission spectroscopy. After treatment times as short as 15 s, the UV-induced ozone treatment decreases the amount of carbon adsorbates at the CIGSSe surface significantly, while the oxygen content increases. This is accompanied by the oxidation of all absorber surface elements, i.e., indium, selenium, sulfur, and copper. Short (60 s) low-energy Ar + -ion treatments, in contrast, primarily remove oxygen from the surface. Longer treatment times also lead to a removal of carbon, while extremely long treatment times can also lead to additional (likely metallic) Cu phases at the absorber surface as well.
Fabricating Novel Geometries of GA-CH Aerogels Through Wax Infiltration and Leaching of Fused Quartz
Not provided.
Performance of a liquid Ga target for Laser Ion Source
We experimentally proved the feasibility of a liquid-based target for Laser Ion Source (LIS) application. The target consists of melted metal gallium contained in a heated crucible. Ions current resulting from laser irradiation. Moreover, given the explosive ablation mechanism involved, each laser shot has been found to induce fluctuations in the surface level. It takes about 0.7 sec to recover the steady condition fully. Despite the maximum fluctuation being 2.7 mm (top-bottom maximum displacement), these fluctuations have shown no significant influence on total ion current and are independent of the temperature of the sample within the tested repetition rate. This study provides valuable insights into the potential of employing such a system for LIS.
Simulated Structural and Electronic Properties of Cation-Disordered Zn Ge N 2 and its Interface with Ga N
Not Available
Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates
Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.
Constraints on 5 f -electron magnetism in Ga-stabilized $δ$-Pu from x-ray magnetic circular dichroism
Density-functional theory models of δ-Pu accurately predict crystal structure, phonon density of states, and unit cell volumes but require magnetic degrees of freedom which have never been experimentally verified. Some models invoke an on-site cancellation of spin and orbital moments, engendering a near-zero bulk magnetization, undetectable by most probes. Here, we employ x-ray magnetic circular dichroism at the Pu M 4,5 edges to directly probe spin and orbital moments using the magneto-optical sum rules. The data show no dichroism within experimental error, constraining polarized moments at 6 T and 3 K to μ L,S <0.1μ B . Finally, these experiments point to the absence of even unconventional spin-orbit compensated order in δ-Pu.