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At least 379 records · Page 21

The Influence of Copper Impurity on the Electronic Structure and Optical Properties of TmNi{sub 5} Compound

Investigations of the electronic structure and optical properties of TmNi{sub 5–х}Сu{sub x} (х = 0, 1, 2, 3) compounds were performed. Self-consistent calculations of the band spectrum have been performed in the local electron-spin-density approximation with a correction on strong electron interactions within the LSDA + U method. Total and partial densities of electron states associated with thulium, nickel, and copper atoms have been calculated. Optical conductivity, the behavior of which is interpreted for each compound taking into account the performed calculations, has been measured by the ellipsometry method in a wide wavelength range of 0.22–16 μm. Concentration dependences of plasma and relaxation frequencies of conduction electrons have been determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Analysis of optical and magnetooptical spectra of Fe{sub 5}Si{sub 3} and Fe{sub 3}Si magnetic silicides using spectral magnetoellipsometry

The optical, magnetooptical, and magnetic properties of polycrystalline (Fe{sub 5}Si{sub 3}/SiO{sub 2}/Si(100)) and epitaxial Fe{sub 3}Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe{sub 5}Si{sub 3} is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe{sub 5}Si{sub 3} and Fe{sub 3}Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe{sub 5}Si{sub 3} and Fe{sub 3}Si crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic structure and optical properties of the HoCoSi and ErNiSi compounds

The electronic structure and the optical properties of the HoCoSi and ErNiSi compounds are studied. Spin-polarized band calculations are performed in the local electron density approximation corrected for the strong electron–electron interactions in the 4f shell of a rare-earth ion (LSDA + U method [11]). The optical constants are measured by ellipsometry in a wide wavelength range, and the frequency dependences of a number of spectral parameters are determined. The calculated densities of states are used to interpret the structural features of the interband optical conductivities of the intermetallic compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Properties of AlN films deposited by reactive ion-plasma sputtering

The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

36 MATERIALS SCIENCE↗

Optical properties of PbS thin films

The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be E{sub 1} = 3.53 eV and E{sub 2} = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D (m = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity (αhν){sup 2} on the photon energy hν, the band gap is established at E{sub g} = 0.37 eV.

36 MATERIALS SCIENCE↗

Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

36 MATERIALS SCIENCE↗

Optical Properties of Polyethylene Filled with Bi{sub 2}Te{sub 3} Nanocrystallites

Composite mixtures with various component concentrations are fabricated by the thermal pressing of low-density polyethylene and Bi{sub 2}Te{sub 3} in the powder-like state with a nanocrystal size of ~50 nm. These samples preliminarily characterized by X-ray diffractometry and Raman spectroscopy are investigated by spectroscopic ellipsometry in a photon energy range of 1–6 eV. The dielectric functions for composites with a nominal Bi{sub 2}Te{sub 3} weight concentration of 5, 10, 30, 40, 50, 60, and 70% are calculated based on the measured optical constants of polyethylene and the Bi{sub 2}Te{sub 3} crystal in the approximation of the Bruggeman effective medium. The analysis of depolarization features of reflected light makes it possible to establish the actual inhomogeneity of the composite samples under study caused by the clusterization of nanocrystallites with an increase in the Bi{sub 2}Te{sub 3} weight concentration in polyethylene and propose the most reliable optical model of the formed composites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon

This study consisting of two parts is concerned with the features of the three-stage process of the metal-assisted chemical etching (MACE) of silicon. This process is used to fabricate silicon nanostructures. In the first part of this work, a layer of self-assembled Ag nanoparticles chemically deposited from a solution on the surface of single-crystal silicon (c-Si) (MACE stage 1) was studied, and the second part includes of investigation of Si nanostructures formed in stages 2 and 3. By means of spectroscopic ellipsometry (in the range of wavelengths λ = 250–900 nm), the pseudodielectric functions of the nanostructures were determined and compared for all the three stages of the MACE process. In addition, for the Si nanostructures, the parameters of layers (the thickness and void fraction) were calculated in the context of the multilayer optical model, with the use of Bruggeman’s effective-medium approximation and fitting procedures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm{sup –1} in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH{sub 4}) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl{sub 3}) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl{sub 3} on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic and Spectral Properties of RRhSn (R = Gd, Tb) Intermetallic Compounds

The investigations of electronic structure and optical properties of GdRhSn and TbRhSn were carried out. The calculations of band spectrum, taking into account the spin polarization, were performed in a local electron density approximation with a correction for strong correlation effects in 4f shell of rare earth metal (LSDA + U method). The optical studies were done by ellipsometry in a wide range of wavelengths, and the set of spectral and electronic characteristics was determined. It was shown that optical absorption in a region of interband transitions has a satisfactory explanation within a scope of calculations of density of electronic states carried out.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical and Magneto-Optical Properties of Multilayer Nanosized [Co/TiO{sub 2}]{sub n} Films

Abstract—The optical and magneto-optical properties of the metal–dielectric multilayer [Co/TiO{sub 2}]{sub n} structures with 2–4-nm-thick layers prepared on a silicon substrate Si(001) by ion-beam deposition have been studied. The complex permittivity of multilayer [Co/TiO{sub 2}]{sub n} structures has been measured by the optical ellipsometry technique in the spectral range of 0.6–5.6 eV and analyzed using the optical reflection matrices for isotropic multilayer dielectric structures taking into account the optical losses and also using the method of anisotropic effective medium. The magneto-optical Kerr effect has been measured by the polarimetric technique in the spectral range of 1.2–4.5 eV in the polar and longitudinal geometries. The magnetic anisotropy type is determined on the base of the field dependences of the magneto-optical Kerr effect. It is found that the nanosized [Co/TiO{sub 2}]{sub n} structures can be considered as artificial optically uniaxial media with a strong magnetic and optical anisotropy at room temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

A Role of the 3d Electron Subsystem in the Evolution of Band Structure and Magnetic and Optical Properties of ErNi{sub 5 –} {sub x}Co{sub x} Compounds (x = 0–4)

The evolution of the electronic structure and optical and magnetic properties of ErNi{sub 5 –} {sub x}Co{sub x} compounds (x = 0–4), occurring upon substitution of nickel by cobalt atoms, has been investigated. Spin-polarization calculations of the band spectrum of these intermetallic compounds have been performed within the local spin density approximation with a correction for strong electron correlations in the 4f shell of a rare-earth ion (method LSDA+U). The values of magnetic moments for erbium, nickel, and cobalt ions (located at different crystallographic sites) are obtained. The exchange-interaction parameters for the 3d sublattice of transition metals are determined. The spectral properties of the compounds have been investigated in the wavelength range of 0.22–15 μm by optical ellipsometry. The experimental frequency dependences of the optical conductivity in the interband absorption region are compared with the corresponding characteristics calculated based on the density of electronic states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution

The time evolution of the ensemble of micropores formed in the near-surface region of silicon during the growth of thin films of silicon carbide is studied by the method of atom substitution. SiC/Si samples are studied by scanning electron microscopy, ellipsometry, and confocal Raman microscopy. The formation of the porous layer involves several characteristic stages: the emergence of single pores, their growth with the formation of dendrite-like structures, and subsequent coalescence into a continuous layer. It is shown that the thickness of the porous layer at the initial stages of the growth is proportional to the cubic root of time. The possible mechanisms of pore formation are discussed and a theoretical model is proposed to describe the dependence of the average thickness of the porous layer on time. The model is in a good qualitative agreement with the experimental results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photoinduced Reversible Local Deformation of the Surface Relief in Bulk Single Crystals of TlInSe{sub 2}, TlGaTe{sub 2}, and TlSe

Giant macroscopic expansion of the surface relief, localized within a laser spot size, has been observed in bulk single crystals of TlInSe{sub 2}, TlGaTe{sub 2}, and TlSe at room temperature and laser radiation densities lower by at least two orders of magnitude than the material optical damage threshold. Quantitative estimations of the deformation magnitude in this local region were obtained using an interference dilatometer. The photon absorption length was determined with the aid of spectroscopic ellipsometry. It is established that the surface deformation amounts to 2.6 × 10{sup –3} at a laser radiation intensity of 19 mW/mm{sup 2}. The observed phenomenon has a thermal nature and is probably related to a low thermal conductivity of the materials studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Surface Topography and Optical Properties of Thin AlN Films Produced on GaAs (100) Substrate by Reactive Ion-Plasma Sputtering

A study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Influence of Hydrogen Bonding on the Kinetic Stability of Vapor Deposited Glasses of Triazine Derivatives

It has recently been established that physical vapor deposition (PVD) can produce organic glasses with enhanced kinetic stability, high density, and anisotropic packing, with the substrate temperature during deposition (Tsubstrate) as the key control parameter. The influence of hydrogen bonding on the formation of PVD glasses has not been fully explored. Herein, we use a high-throughput preparation method to vapor-deposit three triazine derivatives over a wide range of Tsubstrate, from 0.69 to 1.08Tg, where Tg is the glass transition temperature. These model systems are structural analogues containing a functional group with different H-bonding capability at the 2-position of a triazine ring: (1) 2-methylamino-4,6-bis(3,5-dimethyl-phenylamino)-1,3,5-triazine (NHMe) (H-bond donor), (2) 2-methoxy-4,6-bis(3,5-dimethyl-phenylamino)-1,3,5-triazine (OMe) (H-bond acceptor), and (3) 2-ethyl-4,6-bis(3,5-dimethyl-phenylamino)-1,3,5-triazine (Et) (none). Using spectroscopic ellipsometry, we find that the Et and OMe compounds form PVD glasses with relatively high kinetic stability, with the transformation time (scaled by the α-relaxation time) on the order of 103, comparable to other highly stable glasses formed by PVD. In contrast, PVD glasses of NHMe are only slightly more stable than the corresponding liquid-cooled glass. Using IR spectroscopy, we find that both the supercooled liquid and the PVD glasses of the NHMe derivative show a higher average number of bonded NH per molecule than that in the other two compounds. These results suggest that H-bonds hinder the formation of stable glasses, perhaps by limiting the surface mobility. Interestingly, despite this difference in kinetic stability, all three compounds show properties typically observed in highly stable glasses prepared by PVD, including a higher density and anisotropic molecular packing (as characterized by IR and wide-angle X-ray scattering).

36 MATERIALS SCIENCE↗