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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

RECLAIM: Electrochemical Lithium and Nickel Extraction with Concurrent Carbon Dioxide Mineralization

This project aims to develop technologies toward the production of Li and Ni from CO 2 -reactive minerals and rocks that contain Ca and Mg, while sequestering CO 2 . The technologies include acoustic stimulation and electrolytic proton production, which use electricity to liberate valuable metal ions from the surrounding mineral matrix at sub-boiling temperatures (~20-80°C). Feedstocks include Li/Ni/Ca/Mg-rich igneous and sedimentary rocks and minerals such as holmquistite, hectorite, lateritic Ni ores enriched in Mg-rich serpentine. Other examples of feedstocks that could be used include coarse grained orthocumulate, mine tailings, etc. In the first step, the electrolytic breakdown of water to H + and OH – (as well as O 2 and H 2 ) will be induced by applying an electric potential to simultaneously produce acidity and alkalinity. The solid feedstocks will be dissolved in the acidic anolyte under acoustic stimulation. Solubilized species will then undergo separation using our unique Li + -selective membranes driven by electrodialysis, leading to concentration of Li as soluble lithium silicate, from which Li 2 CO 3 can be derived by reaction with CO 2(g) while supplying cathode alkalinity. Also at the cathode, stepwise electrolytic precipitation of metal hydroxides, including Ni(OH) 2 , Ca(OH) 2 , and Mg(OH) 2 is performed along a cascade reactor in which both the applied potential and pH increase downstream, thereby simultaneously extracting and separating the metals. Finally, exposure of Ca(OH) 2 and Mg(OH) 2 to dilute CO 2 will result in CO 2 uptake in the form of Ca and Mg carbonates. The primary accomplishments include sample procurement and characterization. Progress has been made on precursor identification and mapping, establishing protocols for assessing metal extractability under sonication, and preliminary technoeconomic analysis (TEA) and life cycle analysis (LCA).

36 MATERIALS SCIENCE↗
DOE OSTI2025

Field-dependent carrier transport in implanted isolation region of GaN lateral power devices

Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.

Sadek, Mansura (ORCID:0000000322588338)↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRS1997

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗
DOE OSTI2020

Materials and technological processes for High-Gradient accelerating structures: new results from mechanical tests of an innovative braze-free cavity.

Pure oxygen-free high-conductivity copper is a widely used material for manufacturing accelerating cavities working at room temperature. Several studies attempted to explain limitations associated with the maximum allowed field gradients and the behaviour of vacuum RF breakdown in copper accelerating structures through generation and movement of dislocations under stresses associated with RF electric and magnetic fields. Pure copper and also copper alloys undergo mechanical and thermal treatments to be hardened and strengthened during manufacturing, although their mechanical properties significantly change after heating above 590°C. High temperature brazing and diffusion bonding are assembly methods widely used to manufacture ultra-high vacuum accelerating devices. However, these processes, occurring at about 800–1000°C, significantly affect the mechanical properties of copper and copper alloys. We introduce here a novel Tungsten Inert Gas welding procedure, which is fast and keeps the high-gradient surfaces of the cavity and other components well below the copper annealing temperature. This process may be successfully used to manufacture copper-based accelerating components. This technology further preserves the hardness and cleanliness of copper in order to achieve the maximum accelerating gradient.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Electro-Thermo-Mechanical (ETM) Study on Submarine Dynamic Power Cables (SDPC) for Offshore Wind Transmission

Understanding the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project conducted a systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15kV power cable with three cores of copper conductor, ethylene propylene rubber (EPR) insulation, and continuously corrugated welded aluminum armor (CCWA). An ETM testing system was developed by integrating a high voltage (HV) amplifier, two ceramic heaters, and a rod-plate transverse compression setup into a mechanical testing machine. Increasing temperature from room temperature (RT, 22 degree C) to 90 degree C resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. Under creep mechanical loading, the dielectric breakdown time was decreased by 70% for a given mechanical load when the specimen temperature increased from RT to 90oC. The failure strain in both monotonic and creep mechanical loading modes was related to the maximum mechanical load applied. Although the dielectric breakdown occurred in the ETM test, the post-test measurement revealed an impressive recovery of electric resistance. The failure analysis on cross section of tested specimens indicated a sizable gap across insulation layer near the area between copper conductor and loading rod, which apparently resulted from online dielectric failure and offline elastic recovery of components including conductor and insulation layer.

17 WIND ENERGY↗
NASA NTRS2017

Self-Healable Electrical Insulation for High Voltage Applications

Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

electrical insulation↗
NASA NTRS1972

Dielectric breakdown in a dilute plasma.

Description of tests performed to determine the effects of high voltages on dielectrics that are to insulate solar cell arrays operating at voltages up to 16 kV from the electrically active plasma of the space environment at 500 km altitude. The tests were performed on dielectrics considered for this application at positive bias voltages as high as 20 kV dc relative to ground in an argon plasma with electron number densities of approximately one million per cu cm. Teflon specimens displayed higher breakdown voltages than all other dielectrics tested.

Mckinzie, D. J., Jr.↗
DOE OSTI2025

Plasma-Bubble Imaging and Spectroscopy (Final Report)

The aim of this research was to capture time- and space-resolved behavior of breakdown initiation and development in water with gas bubbles injected between the electrodes when excited with microsecond voltage pulses. The results were directly compared to our previous results from a PCRF collaboration on the development of an electrical discharge in a gas bubble immersed in liquids with different conductivities when excited by nanosecond voltage pulses. For nanosecond regimes, cavitation seems to play a major role in plasma breakdown for low conductivities and discharge initiates at an electrode. On microsecond timescales, where cavitation does not play a role, it has been hypothesized that breakdown in water occurs first in bubbles on or near the electrodes, pre-existing or formed thermally.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Simulation of decelerating streamers in inhomogeneous atmosphere with implications for runaway electron generation

The dynamics of positive and negative streamers is numerically simulated in atmospheric pressure air in the range of parameters corresponding to the streamer deceleration and termination in the middle of the discharge gap. A detailed comparison with experiments in air at constant and variable density demonstrates good agreement between the 2D simulation results and the observations. It is shown that positive and negative streamers behave in radically different ways when decelerating and stopping. When the head potential drops, the negative streamer transits to the mode in which the propagation is due to the forward electron drift. In this case, the radius of the ionization wave front increases, whereas the electric field at the streamer head decreases further and the streamer stops. Its head diameter continues to increase due to the slow drift of free electrons in the residual under-breakdown field. On the contrary, the only advancement mechanism for a positive streamer with a decreasing head potential is a decrease in the effective radius of the ionization wave, leading to a local increase in the electric field. This mechanism makes it possible to compensate for the reduction in the efficiency of gas photoionization at small head diameters. A qualitative 1D model is suggested to describe streamer deceleration and stopping for different discharge polarities. Estimates show that, during positive streamer stopping, the local electric field at the streamer head can exceed the threshold corresponding to the transition of electrons to the runaway mode when the head potential (relative to the surrounding space) decreases to~1.2 kV in atmospheric pressure air. In this case, pulsed generation of a beam of runaway electrons directed into the channel of a stopping positive streamer can occur. The energy of the formed pulsed electron beam depends on the intensity of photoionization in front of the streamer head. This energy can vary from 700 V (when increasing the photoionization rate by a factor of 10 with respect to the value in atmospheric pressure air) to 2.6 kV (when decreasing the photoionization rate by a factor of 1000). It is possible that this behavior of decelerating positive streamers can explain the observed bursts of x-ray radiation during the streamer propagation in long air gaps.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1992

Elemental analyses of hypervelocity micro-particle impact sites on interplanetary dust experiment sensor surfaces

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity micro-particles that struck the active sensors with enough energy to breakdown the 0.4 to 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. These discharge features, which include 50 micron diameter areas where the aluminum top layer has been vaporized, facilitate the location of the impacts. The high purity Al-SiO2-Si substrates allow detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) is used to create two-dimensional elemental ion intensity maps of micro-particle impact sites on the IDE sensors. The element intensities in the central craters of the impacts are corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results are used to classify the particles' origins as 'manmade', 'natural' or 'indeterminate'. The last classification results from the presence of too little impactor residue (a frequent occurrence on leading edge impacts), analytical interference from high background contamination, the lack of information on silicon residue, the limited usefulness of data on aluminum in the central craters, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. A total of 35 impacts on leading edge sensors and 22 impacts on trailing edge sensors were analyzed.

Simon, Charles G.↗
DOE OSTI2023

Metastable argon dynamics in a pulsed microplasma at 43 GHz

Short pulses of millimeter wave (MMW) radiation at 43 GHz create microplasma within a photonic crystal for pressures from 40 to 600 Torr (1.3 × 10 3 –8.0 × 10 4 Pa). Gas breakdown occurs within a photonic crystal, which acts as an electromagnetic resonator to create a strong initial electric field. The time response of the argon metastable density is experimentally determined during the pulse and in the afterglow using laser absorption. The metastable density overshoots the steady-state condition at the beginning of the pulse and during the afterglow. Modeling is presented to understand these observations. The overproduction of argon 1s5 at the beginning of each pulse is due to a concurrent overshoot in the MMW electric field within the photonic crystal. This field overheats the plasma electrons and enhances the production of excited states. The burst of argon metastables observed in the afterglow is due to the pooled energy of the plasma stored in electrons, ions, and excited states of argon. As a result, understanding metastable production is an important intermediate step to ionization and is also critical in the study of diode-pumped rare gas lasers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Comparative Investigation of System-Level Optimized Power Conversion System Architectures to Reduce LCOE for Large-Scale PV-Plus-Storage Farms

PV-plus-storage (PVS) has become a prevalent configuration for newly commissioned large-scale solar projects. However, the optimal power conversion system (PCS) architecture has not been investigated yet. This paper first validates the limited impact of inverter cost on LCOE and then explores a system-level optimized PCS architecture with extended LCOE reduction to proliferate large-scale dispatchable solar energy. Two state-of-the-art architectures including central inverters (CI), traditional 480/600 V string inverters (SI) are compared with newly proposed medium voltage string inverters (MVSI) and multiport DC transformer (MDCT). With verified layouts and single line diagrams (SLDs) of 20 MW PVS plants, the losses and costs breakdown of different architectures are extracted and the PCS related LCOEs are derived. In this analysis, all electrical bill of materials (EBOS) elements, inverters, battery storage and its associated components, are included, whose losses and costs are obtained from markets, manufacturers, and literature. Besides, the sensitivities of PCS-related LCOEs to Inverter-Loading-Ratio (ILR) are also investigated. Here, the results show that compared with CI and SI with 1.5 kV PV, 4 kV MVSI and 34 kV MDCT present an extended LCOE reduction across all ILR from 1.0 to 3.0, making them economically favorable candidates for PVS farms.

14 SOLAR ENERGY↗
NASA NTRS1987

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗
NASA NTRS2011

Evaluation of Cable Harness Post-Installation Testing

The Cable Harness Post-Installation Testing Report was written in response to an action issued by the Ares Project Control Board (PCB). The action for the Ares I Avionics & Software Chief Engineer and the Avionics Integration and Vehicle Systems Test Work Breakdown Structure (WBS) Manager in the Vehicle Integration Office was to develop a set of guidelines for electrical cable harnesses. Research showed that post-installation tests have been done since the Apollo era. For Ares I-X, the requirement for post-installation testing was removed to make it consistent with the avionics processes used on the Atlas V expendable launch vehicle. Further research for the report involved surveying government and private sector launch vehicle developers, military and commercial aircraft, spacecraft developers, and harness vendors. Responses indicated crewed launch vehicles and military aircraft perform post-installation tests. Key findings in the report were as follows: Test requirements identify damage, human-rated vehicles should be tested despite the identification of statistically few failures, data does not support the claim that post-installation testing damages the harness insulation system, and proper planning can reduce overhead associated with testing. The primary recommendation of the report is for the Ares projects to retain the practice of post-fabrication and post-installation cable harness testing.

King, M. S.↗
DOE OSTI2022

Large-Scale Simulation of Regional Demand Flexibility Implementation and Customer Economic Impact

The Distribution System Operator with Transactive (DSO+T) study conducted a large-scale simulation of over 60,000 customers in a region the size of Texas to demonstrate the effective coordination of distributed energy resources (DERs) in commercial and residential buildings. The integrated simulation included both the bulk (wholesale generation and transmission) and distribution systems. The DERs (including batteries, electric vehicles, air conditioning, and water heaters) participated in a transactive energy retail market that was integrated into an existing competitive wholesale market. The engineering and economic performance of the resulting demand flexibility was evaluated over annual simulations for both moderate and high renewable generation scenarios. A detailed parametric cost model was developed to enable detailed economic analysis of key stakeholders. In addition, fixed and dynamic customer tariffs were designed and applied to the customer population. This allowed the impact on annual customer bills to be analyzed for various building types (residential versus commercial; single- versus multi-family). This paper presents results showing the relative flexibility of batteries, electric vehicles, and building loads throughout the year and under different renewable scenarios. This feeds a detailed breakdown of the impact this flexibility has on the operating costs of the grid and the resulting net economic benefit. Finally, the study showed that practically all customer classes (including non-participating customers) save money under the proposed demand flexibility scheme. The study found overall net annual economic savings of $3.3-5.0B for a region the size of Texas equating to average customer bill savings of 10-16%.

Reeve, Hayden M.↗