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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Dislocation Loops in Proton Irradiated Uranium-Nitrogen-Oxygen System

Here in this study, we investigated the dislocation loop types formed in the proton-irradiated uranium-nitrogen-oxygen (U-N-O) system, which involves uranium mononitride (UN), uranium sesquinitride (a-U2N3), and uranium dioxide (UO2) phases. The dislocation loop formation is examined using specimens irradiated at 400°C and 710°C. Based on the detailed transmission-based electron microscopy characterization with i) the morphology-based on-zone and ii) the invisibility-criterion based two-beam condition imaging techniques, only a single type of dislocation loop in each phase is found: a/2?110?, a/2?111?, or a/3?111? dislocation loops in UN, a-U2N3, and UO2 phases, respectively. Molecular statics calculations for the formation energy of perfect and faulted dislocation loops in UN phases indicate a critical loop size of ~ 6 nm, above which perfect loops are energetically favorable. This could explain the absence of faulted loops in the experimental observation of the irradiated UN phase at two temperatures. This work will enhance the understanding of irradiation induced microstructural evolution for uranium nitrides as advanced nuclear fuels for the next-generation nuclear reactors.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2012

Plastic deformation of submicron-sized crystals studied by in-situ Kikuchi diffraction and dislocation imaging

The plastic deformation of submicron-size copper single crystals in the form of pillars has been characterized during in-situ compression in the transmission electron microscope up to strains of 28-33% using a state-of-the-art holder (PI-95 PicoIndenter). The dimensions of the crystals used were approx. 500 Multiplication-Sign 250 Multiplication-Sign 200 nm{sup 3} with the compression axis oriented 1.6 Degree-Sign from [110]. Local crystallographic orientations have been determined with high accuracy using a Kikuchi diffraction method and glide of dislocations over a pillar has also been observed directly by dark field imaging. The variation in the local orientation during deformation has been followed by in-situ convergent beam electron Kikuchi diffraction. The in-situ observations have been followed up by post-deformation measurements with the samples still mounted in the electron microscope. Crystal breakup following localized deformation was observed in two of three crystals examined, and for all crystals the direction of rotation during deformation is in agreement with slip taking place on a subset of the four slip systems, with the highest Schmid factors on the (111) and (- 1-11) slip planes. A diffraction-based Burgers vector analysis confirms that the active dislocations are from slip systems with the highest Schmid factors. These results from testing of micropillars are in good agreement with the deformation behaviour previously reported for both single- and poly-crystal samples with dimensions in the millimetre range. - Highlights: Black-Right-Pointing-Pointer We performed in-situ plastic deformation of submicron-sized copper single crystals. Black-Right-Pointing-Pointer We measured in-situ and ex-situ crystal rotation and imaged dislocation activities. Black-Right-Pointing-Pointer We measured crystallographic orientations and analyzed dislocation Burgers vectors. Black-Right-Pointing-Pointer Crystals' rotation in agreement with slip of dislocations with highest Schmid factor. Black-Right-Pointing-Pointer These results in good agreement with millimeter-scale samples' deformation behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Orientation dependence of the dislocation microstructure in compressed body-centered cubic molybdenum

The orientation dependence of the deformation microstructure has been investigated in commercial pure molybdenum. After deformation, the dislocation boundaries of compressed molybdenum can be classified, similar to that in face-centered cubic metals, into three types: dislocation cells (Type 2), and extended planar boundaries parallel to (Type 1) or not parallel to (Type 3) a (110) trace. However, it shows a reciprocal relationship between face-centered cubic metals and body-centered cubic metals on the orientation dependence of the deformation microstructure. The higher the strain, the finer the microstructure is and the smaller the inclination angle between extended planar boundaries and the compression axis is. - Highlights: • A reciprocal relationship between FCC metals and BCC metals is confirmed. • The dislocation boundaries can be classified into three types in compressed Mo. • The dislocation characteristic of different dislocation boundaries is different.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by electron backscatter diffraction (EBSD). Concomitant transmission electron microscopy (TEM) investigation revealed that the laths contain subgrains with the size between 50 and 100 nm. A novel evaluation procedure of EBSD images was elaborated for the determination of the density and the space distribution of geometrically necessary dislocations from the misorientation distribution. The total dislocation density obtained by X-ray diffraction line profile analysis was in good agreement with the value determined by EBSD, indicating that the majority of dislocations formed due to martensitic transformation during quenching are geometrically necessary dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A comprehensive investigation of the strengthening effects of dislocations, texture and low and high angle grain boundaries in ultrafine grained AA6063 aluminum alloy

Highlights: • Evolution of microstructure and mechanical properties of AA6063 after severe plastic deformation was investigated. • Average cell size shows a more solid relationship with mechanical properties rather than the average grain size. • This indicates that in addition to high angle boundaries, cell boundaries play a strengthening role. - Abstract: The effect of equal channel angular pressing (ECAP) on the microstructure and mechanical properties of AA6063 aluminum alloy was investigated. For this purpose, samples of AA6063 aluminum alloy were deformed up to 10 passes using ECAP and the evolution of microstructure, texture and dislocation density was investigated. It was found that the dislocation density increased and cells mostly surrounded by low angle boundaries (LABs) formed after 2 passes ECAP. Increasing the dislocation density continued with further processing and reached a maximum at the 4th ECAP pass. With further deformation to 6 passes, the dislocation density reduced, the fraction of high angle boundaries (HABs) increased and the averages of cell size and grain size reduced, significantly, which indicated the occurrence of grain refinement. However, a slight increase in dislocation density, average cell size (ACS) and average grain size (AGS), indicating coarsening, occurred when 10 passes of ECAP are imposed. Hardness, yield (YS) and ultimate tensile strength (UTS) increased continuously although the most significant enhancement occurred after 2 passes of ECAP. Investigating the correlation between the microstructure and mechanical properties indicated that Hall-Petch relationship was valid for ultrafine grained AA6063 before the coarsening started provided that the property of interest was correlated to average cell size but not the average grain size.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Characterization of dislocation microstructures in cyclically deformed [001] copper single crystals using high voltage scanning transmission electron microscopy

Highlights: • High voltage scanning transmission electron microscopy is adopted. • Dislocation structure strongly depends on given plastic strain amplitude. • Evolution of dislocation structure from vein-like to labyrinth is revealed. - Abstract: Low-cycle fatigue tests of copper single crystals with the [001] stress axis were performed at room temperature under constant plastic shear strain amplitudes between γ{sub pl} = 3.5 × 10{sup − 4} and 1.0 × 10{sup − 2}. Characteristic dislocation structures, which are highly dependent on a given plastic strain amplitude, were observed by high voltage scanning transmission electron microscopy. A vein-like dislocation structure, having a parallelepiped shape with two longitudinal (100) and (001) sides, was periodically formed along the [010] direction at around γ{sub pl} = 1.0 × 10{sup − 3}. Labyrinth structure with the (100) and (001) dislocation walls was then gradually developed with increasing plastic strain amplitude.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hydrogen influences thermal activation parameters for dislocation glide during low cycle fatigue of 316L stainless steel

Measurements of activation areas are used to investigate the effect of hydrogen on the kinetics of dislocation glide during cyclic deformation in cold-worked 316L stainless steel. Non-charged and hydrogen-precharged (H-precharged) specimens were tested in low cycle fatigue (LCF) under plastic strain control. A series of plastic strain rate changes was performed periodically at the peak true plastic strain from the first cycle to half-life, and at various plastic strain values around stable hysteresis loops near half-life to determine the operational activation area, Δ a ∗. Both material conditions demonstrate a rapid increase in Δ a ∗ during the initial rapid softening followed by a region of approximately constant values coinciding with a reduced rate of softening. Near half-life, hydrogen reduces Δ a ∗ at a given true stress due to its effect on the activation distance and obstacle spacing. The magnitudes of Δ a ∗ reveal that bypassing solutes, cutting forest dislocations, and initiating cross slip are important mechanisms of thermally activated dislocation glide at all amplitudes, except hydrogen suppresses cross slip at the lowest plastic strain amplitudes. These results are supported by electron microscopy characterization of deformed microstructures. A Haasen plot analysis indicates that forest dislocations control the kinetics of deformation in both material conditions. It also reveals the presence of athermal obstacles in both non-charged and H-precharged conditions, likely dense dislocation tangles and cell walls. Additionally, the effect of hydrogen on microstructure evolution (by reducing the propensity for cross slip) leads to a dependence of athermal stress on plastic strain amplitude.

Activation area↗
DOE OSTI2017

Comparison of dislocation content measured with transmission electron microscopy and micro-Laue diffraction based streak analysis

The subsurface dislocation content in a Ti-5Al-2.5Sn (wt%) uniaxial tension sample deformed at ambient temperature was characterized by peak streak analysis of micro-Laue diffraction patterns collected non-destructively by differential aperture X-raymicroscopy, and with focused ion beam transmission electron microscopy of material in the same volume. This comparison reveals that micro-Laue diffraction streak analysis based on an edge dislocation assumption can accurately identify the dominant dislocation slip system history (Burgers vector and plane observed by TEM), despite the fact that dislocations have predominantly screw character. As a result, other dislocations identified by TEM were not convincingly discernible from the peak streak analysis.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Dislocation-induced large local polarization inhomogeneity of ferroelectric materials

Dislocations in ferroelectrics play important roles in ferroelectricity, piezoelectricity, and dielectricity. However, the intrinsic charge-lattice coupling mechanism in ferroelectric crystals containing dislocations is still not well understood. Here, we report a large local polarization inhomogeneity of ~100 μCcm –2 induced by a single a[001] dislocation in the PbZr 0.2 Ti 0.8 O 3 /SrTiO 3 film/substrate heterostructure, the tensile region (~120 μCcm –2 ) and the compressive strain region (~21 μCcm –2 ) around the dislocation forms a butterfly-like area. Furthermore, this study reveals the dramatic effects of dislocations on local polarization and provides a strategy to manipulate the polarization magnitude and orientation of local polarization by defect engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells

Surface crosshatch roughness typically develops during the growth of lattice-mismatched compositionally graded buffers and can limit misfit dislocation glide. In this study, the crosshatch roughness during growth of a compressive GaInP/GaAs graded buffer is reduced by increasing the phosphine partial pressure throughout the metamorphic growth. Changes in the average misfit dislocation length are qualitatively determined by characterizing the threading defect density and residual strain. The decrease of crosshatch roughness leads to an increase in the average misfit dislocation glide length, indicating that the surface roughness is limiting dislocation glide. Growth rate is also analyzed as a method to reduce surface crosshatch roughness and increase glide length, but has a more complicated relationship with glide kinetics. Using knowledge gained from these experiments, high quality inverted GaInAs 1 eV solar cells are grown on a GaInP compositionally graded buffer with reduced roughness and threading dislocation density. The open circuit voltage is only 0.38 V lower than the bandgap potential at a short circuit current density of 15 mA/cm{sup 2}, suggesting that there is very little loss due to the lattice mismatch.

14 SOLAR ENERGY↗
DOE OSTI2014

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structure of screw dislocation core in Ta at high pressure

The core structure and Peierls stress of the 1/2 〈111〉(110) screw dislocation in Ta have been investigated theoretically using the modified Peierls–Nabarro theory that takes into account the discreteness effect of crystal. The lattice constants, the elastic properties, and the generalized-stacking-fault energy(γ-surface) under the different pressures have been calculated from the electron density functional theory. The core structure of dislocation is determined by the modified Peierls equation, and the Peierls stress is evaluated from the dislocation energy that varies periodically as dislocation moves. The results show the core width and Peierls stress in Ta are weakly dependent of the pressure up to 100 GPa when the length and stress are measured separately by the Burgers vector b and shear modulus μ. This indicates that core structure is approximately scaling invariant for the screw dislocation in Ta. The scaled plasticity of Ta changes little in high pressure environment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dislocation-related trap levels in nitride-based light emitting diodes

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the current dispersion characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed to modulate the dislocation density among the heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow pulsed I-V measurements show severe compressions and appear to be significantly dependent on the threading dislocation density. By analyzing the corresponding slow detrapping process, a deep-level trap with emission time constant in the order of seconds was identified as the cause. Among the specimens, both in the epilayers and at the surface, the number of dislocations was found to have a notable influence on the spatial distribution of deep-level trap density. The observations confirm that the commonly observed degraded frequency performance among AlGaN/GaN HFETs in the form of DC-radio frequency dispersions can at least partly be correlated with threading dislocation density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dislocation structure produced by an ultrashort shock pulse

We found an ultrashort shock pulse driven by a femtosecond laser pulse on iron generates a different dislocation structure than the shock process which is on the nanosecond timescale. The ultrashort shock pulse produces a highly dense dislocation structure that varies by depth. According to transmission electron microscopy, dislocations away from the surface produce microbands via a network structure similar to a long shock process, but unlike a long shock process dislocations near the surface have limited intersections. Considering the dislocation motion during the shock process, the structure near the surface is attributed to the ultrashort shock duration. This approach using an ultrashort shock pulse will lead to understanding the whole process off shock deformation by clarifying the early stage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Geometric treatment of conduction electron scattering by crystal lattice strains and dislocations

The problem of conduction electron scattering by inhomogeneous crystal lattice strains is addressed using a tight-binding formalism and the differential geometric treatment of deformations in solids. In this approach, the relative positions of neighboring atoms in a strained lattice are naturally taken into account, even in the presence of crystal dislocations, resulting in a fully covariant Schrödinger equation in the continuum limit. Unlike previous work, the developed formalism is applicable to cases involving purely elastic strains as well as discrete and continuous distributions of dislocations—in the latter two cases, it clearly demarcates the effects of the dislocation strain field and core. It also differentiates between elastic and plastic strain contributions, respectively. The electrical resistivity due to the strain field of edge dislocations is then evaluated and the resulting numerical estimate for Cu shows good agreement with reported experimental values. This indicates that the electrical resistivity of edge dislocations in metals is not entirely due to the core, contrary to current models. Application to the study of strain effects in constrained quantum systems is also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Deformation mechanism study of a hot rolled Zr-2.5Nb alloy by transmission electron microscopy. I. Dislocation microstructures in as-received state and at different plastic strains

Thin foil dog bone samples prepared from a hot rolled Zr-2.5Nb alloy have been deformed by tensile deformation to different plastic strains. The development of slip traces during loading was observed in situ through SEM, revealing that deformation starts preferentially in certain sets of grains during the elastic-plastic transition region. TEM characterization showed that sub-grain boundaries formed during hot rolling consisted of screw 〈a〉 dislocations or screw 〈c〉 and 〈a〉 dislocations. Prismatic 〈a〉 dislocations with large screw or edge components have been identified from the sample with 0.5% plastic strain. Basal 〈a〉 and pyramidal 〈c + a〉 dislocations were found in the sample that had been deformed with 1.5% plastic strain, implying that these dislocations require larger stresses to be activated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spatial organization of plastic deformation in single crystals with different structure of slip dislocation

It is established that different structure of slip dislocation at the end of the linear hardening stage results in different distribution of dislocation charges in the volume of a single crystal. In the alloy with a near atomic order the slip of single dislocations leads to formation of planar structures—layers with the excess density of dislocations. In the alloy with long-range atomic order the slip of superdislocations brings the formation of the system of parallel rod-like charged dislocation linking.

36 MATERIALS SCIENCE↗