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Demonstration and Analysis of Ultrahigh Forward Current Density Diamond Diodes
Not provided.
Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN PIN Diodes
Not Available
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
Abstract not provided.
On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress.
Abstract not provided.
Multi-Joule Energy Extraction in Diode-Pumped Tm:YLF
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High Energy Operation of a Diode-Pumped Tm:YLF Laser
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Recovering cavity effects in corrugated organic light emitting diodes
Cavity effects play an important role in determining the out-coupling efficiency of an OLED. By fabricating OLEDs on corrugated substrates, the waveguide and SPP modes can be extracted by diffraction. However, corrugation does not always lead to an enhancement in out-coupling efficiency due to the reduction of the electrode reflectance and hence the cavity effects. Based on the results of our rigorous couple-wave analysis (RCWA) simulation, we found that the cavity effects can be partially recovered using a low index Teflon layer inserted between the ITO anode and the substrate due to the enhancement of the reflectance of the corrugated electrodes. To verify the simulation results, we fabricated corrugated OLEDs having a low-index Teflon interlayer with an EQE of 36%, which is 29% higher than an optimized planar OLED. By experimentally measuring the OLED air mode dispersion, we confirm the cavity emission of a corrugated OLED is enhanced by the low index layer.
III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition
A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m -plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.
GaAs X-Ray Diodes (LDRD Annual Report FY2019)
Ongoing work at the Z Machine on the development of warm x-ray sources in support of national security missions requires fast x-ray diagnostics with sensitivities significantly higher than what is commercially available. Our team represents a collaborative effort between MESA and Z to fabricate GaAs x-ray detectors that meet this need. The delivered detectors have now been fielded in several Z shot series and are providing hard x-ray data to physicists at Z. In addition to improved time response and hard x-ray sensitivity compared to commercial detectors, the devices fabricated at MESA show much more consistent device-to-device signal levels. This improved repeatability gives researchers at Z new quantitative data for source development efforts.
Lumen and Chromaticity Maintenance Behavior of Light-Emitting Diode (LED) Packages Based on LM-80 Data
This report assesses four major LED package platforms used in SSL applications for luminous flux and chromaticity maintenance by analyzing data sets from LM-80 testing of representative products from many Tier 1 LED manufacturers.
Adoption of Light-Emitting Diodes in Common Lighting Applications
The 2020 edition of a report which models the current state of the U.S. general-lighting market and provides analysis on realized and potential energy- and money-saving benefits associated with LED lamps and luminaires.
Prospects & Challenges of Colloidal Quantum Dot Laser Diodes [Slides]
Abstract not provided.