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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21

All sources NASA NTRS DOE OSTI

NASA NTRS1976

A real-time optical data processing device

A novel liquid-crystal electro-optical device useful as a real-time input device in coherent optical data processing is described. The device is a special adaptation of an ac photoactivated liquid-crystal light valve, and utilizes a hybrid field effect (45 deg twisted nematic effect in OFF state and pure optical birefringence of the liquid crystal in ON state). A thin-film sandwich exerts photoelectric control over the optical birefringence of a thin liquid-crystal layer. Liquid-crystal layer thickness is successfully reduced without image degradation. The device offers high resolution (better than 100 lines/mm), contrast (better than 100/1), high speed (10 msec ON, 15 msec OFF), high input sensitivity, low power input, low fabrication cost, and can be operated at below 10 V rms. Preliminary measurements on device performance in level slicing, filtering, contrast reversal, and edge enhancement are under way.

Jacobson, A.↗

NASA NTRS1977

Fluid sampling device

An inlet leak is described for sampling gases, more specifically, for selectively sampling multiple fluids. This fluid sampling device includes a support frame. A plurality of fluid inlet devices extend through the support frame and each of the fluid inlet devices include a longitudinal aperture. An opening device that is responsive to a control signal selectively opens the aperture to allow fluid passage. A closing device that is responsive to another control signal selectively closes the aperture for terminating further fluid flow.

Studenick, D. K.↗

NASA NTRS1977

Memory device for two-dimensional radiant energy array computers

A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included

Schaefer, D. H.↗

NASA NTRS1977

Effectiveness of an inlet flow turbulence control device to simulate flight noise fan in an anechoic chamber

A hemispherical inlet flow control device was tested on a 50.8 cm. (20-inch) diameter fan stage in the NASA-Lewis anechoic chamber. The control device used honeycomb and wire mesh to reduce turbulence intensities entering the fan. Far field acoustic power level results show about a 5 db reduction in blade passing tone and about 10 dB reduction in multiple pure tone sound power at 90% design fan speed with the inlet device in place. Hot film cross probes were inserted in the inlet to obtain data for two components of the turbulence at 65 and 90% design fan speed. Without the flow control device, the axial intensities were below 1.0%, while the circumferential intensities were almost twice this value. The inflow control device significantly reduced the circumferential turbulence intensities and also reduced the axial length scale.

Woodward, R. P.↗

NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.

Stassinopoulos, E. G.↗

NASA NTRS1977

Effectiveness of an inlet flow turbulence control device to simulate flight fan noise in an anechoic chamber

A hemispherical inlet flow control device was tested on a 50.8 cm. (20-inch) diameter fan stage in the NASA-Lewis Anechoic Chamber. The control device used honeycomb and wire mesh to reduce turbulence intensities entering the fan. Far field acoustic power level results showed about a 5 dB reduction in blade passing tone and about 10 dB reduction in multiple pure tone sound power at 90% design fan speed with the inlet device in place. Hot film cross probes were inserted in the inlet to obtain data for two components of the turbulence at 65 and 90% design fan speed. Without the flow control device the axial intensities were below 1.0%, while the circumferential intensities were almost twice this value. The inflow control device significantly reduced the circumferential turbulence intensities and also reduced the axial length scale.

Woodward, R. P.↗

NASA NTRS1979

Development of concepts for satellite retrieval devices

The teleoperator being developed to augment the Space Transportation System (STS) for satellite placement, retrieval, or servicing at altitudes or orbital planes where it would be impractical to use the shuttle is primarily a general purpose propulsion stage that can be fitted with manipulator arms, automated servicers and satellite retrieval devices for particular missions. Design concepts for a general purpose retrieval device for docking with a satellite to which a grappling fixture has been attached, and for a retrieval device for docking with the Solar Maximum Mission (SMM) spacecraft were defined. The mechanical aspects of these two devices are discussed as well as the crew operations involved and problems created by the requirement for remote control. Drawings for the two retrieval device concepts are included.

Pruett, E. C.↗

NASA NTRS1980

Determination of optimum voltages of ion focusing devices using computer techniques

Electric potentials for two dimensional cross sections of ion focusing devices used in a mass spectrometer are calculated via a series of computer programs designed to compute potentials between areas of fixed voltages. Ion trajectories within these devices may be determined by computer and a histogram obtained which plots ion density against ion position along a plate of the focusing device. For each lens system, a plate voltage may be changed, the electric potentials recalculated, and a new histogram calculated in order to determine if the new voltage configuration has increased the device's efficiency. This process may be repeated until the optimum voltage values have been found for maximum particle transmission in each focusing device.

Eckstein, B. A.↗

NASA NTRS1980

The spatial and logical organization of devices in an advanced industrial robot system

This paper describes the geometrical and device organization of a robot system which is based in part upon transformations of Cartesian frames and exchangeable device tree structures. It discusses coordinate frame transformations, geometrical device representation and solution degeneracy along with the data structures which support the exchangeable logical-physical device assignments. The system, which has been implemented in a minicomputer, supports vision, force, and other sensors. It allows tasks to be instantiated with logically equivalent devices and it allows tasks to be defined relative to appropriate frames. Since these frames are, in turn, defined relative other frames this organization provides a significant simplification in task specification and a high degree of system modularity.

Ruoff, C. F.↗

NASA NTRS1981

Thermodynamic limits to the efficiency of solar energy conversion by quantum devices

The second law of thermodynamics imposes a strict limitation to the energy converted from direct solar radiation to useful work by a quantum device. This limitation requires that the amount of energy converted to useful work (energy in any form other than heat) can be no greater than the change in free energy of the radiation fields. Futhermore, in any real energy conversion device, not all of this available free energy in the radiation field can be converted to work because of basic limitations inherent in the device itself. A thermodynamic analysis of solar energy conversion by a completely general prototypical quantum device is presented. This device is completely described by two parameters, its operating temperature T sub R and the energy threshold of its absorption spectrum. An expression for the maximum thermodynamic efficiency of a quantum solar converter was derived in terms of these two parameters and the incident radiation spectrum. Efficiency curves for assumed solar spectral irradiance corresponding to air mass zero and air mass 1.5 are presented.

Buoncristiani, A. M.↗

NASA NTRS1982

Aeroacoustic performance of an externally blown flap configuration with several flap noise suppression devices

Small scale model acoustic experiments were conducted to measure the noise produced in the flyover and sideline planes by an engine under the wing externally blown flap configuration in its approach attitude. Broadband low frequency noise reductions as large as 9 dB were produced by reducing the separation distance between the nozzle exhaust plane and the flaps. Experiments were also conducted to determine the noise suppression effectiveness in comparison with a reference configuration of three passive types of devices that were located on the jet impingement surfaces of the reference configuration. These devices produced noise reductions that varied up to 10 dB at reduced separation distances. In addition, a qualitative estimate of the noise suppression characteristics of the separate devices was made. Finally static aerodynamic performance data were obtained to evaluate the penalties incurred by these suppression devices. The test results suggest that further parametric studies are required in order to understand more fully the noise mechanisms that are affected by the suppression devices used.

Mckinzie, D. J., Jr.↗

NASA NTRS1981

Investigation for single-event upset in MSI devices

The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.

Woods, J. P.↗

NASA NTRS1982

Initial stages of cavitation damage and erosion on copper and brass tested in a rotating disk device

In view of the differences in flow and experimental conditions, there has been a continuing debate as to whether or not the ultrasonic method of producing cavitation damage is similar to the damage occurring in cavitating flow systems, namely, venturi and rotating disk devices. In this paper, the progress of cavitation damage during incubation periods on polycrystalline copper and brass tested in a rotating disk device is presented. The results indicate several similarities and differences in the damage mechanism encountered in a rotating disk device (which simulates field rotary devices) and a magnetostriction apparatus. The macroscopic erosion appears similar to that in the vibratory device except for nonuniform erosion and apparent plastic flow during the initial damage phase.

Rao, P. V.↗

NASA NTRS1982

Deep impurity trapping concepts for power semiconductor devices

High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

Sundberg, G. R.↗

NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗

NASA NTRS1984

Impacting device for testing insulation

An electro-mechanical impacting device for testing the bonding of foam insulation to metal is descirbed. The device lightly impacts foam insulation attached to metal to determine whether the insulation is properly bonded to the metal and to determine the quality of the bond. A force measuring device, preferably a load cell mounted on the impacting device, measures the force of the impact and the duration of the time the hammer head is actually in contact with the insulation. The impactor is designed in the form of a handgun having a driving spring which can propel a plunger forward to cause a hammer head to impact the insulation. The device utilizes a trigger mechanism which provides precise adjustements, allowing fireproof operation.

Redmon, J. W.↗

NASA NTRS1983

Single event upset (SEU) of semiconductor devices - A summary of JPL test data

The data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).

Nichols, D. K.↗

NASA NTRS1985

The performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers

The boundary layer drag on a 0.28 m x 0.91 m flat-plate was measured to evaluate the performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers up to a chord Reynolds number, Re(c) of 17,000. The devices were a pair of thin flat ribbons placed in tandem. The wall conditions examined were smooth, transverse-groove roughnesses having cavity width/depth ratios of 0.7 (d-type) and 3 (k-type), and sandpaper roughness (k-type) of grit sizes 180, 50 and 36. The area-averaged wall-drag was reduced compared to the respective normal levels for all wall conditions. All k-type rough walls exhibited a comparable level of drag reduction (about 7 percent) which was lower than that in the smooth-wall. The d-type rough-wall exhibited a transitional behavior in that the drag reduction dropped from the smooth-wall level to that of the k-type roughnesses with increase in the flow speed. In further experiments on a 6 meter long sandpaper roughened wall and with a pair of symmetric airfoil devices in tandem at an Re(c) of 77,500, it was possible to recover the device drag penalty fully, but no net drag reduction was achieved. The apparent loss of performance of the devices in a rough-wall is explained in terms of their inability to alter the pressure component of the drag in a significant way.

Bandyopadhyay, P. R.↗