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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Probing the electronic properties of gap states near the surface of n -SrTiO 3-δ / i -Si (001) heterojunctions with high sensitivity
We have measured soft x-ray resonant photoemission for the n–SrTiO 3–δ /i–Si(001) (δ=~0.0003) hybrid semiconductor heterojunction with the goal of probing occupied electronic states in the band gap near the surface. By utilizing both swept energy, angle-integrated and fixed-energy, and angle-resolved spectroscopies, we identify the atomic and orbital character of the in-gap state as well as the different electronic phases that contribute to it. Specifically, we isolate the state associated with trapped charge on the n–SrTiO 3–δ surface that causes surface depletion from the localized gap state resulting from electron correlation effects in the complex oxide. Using an x-ray energy close to select dipole allowed TiL 3 → 3d x-ray absorption resonances results in a 40-fold increase in sensitivity. Furthermore, this feature makes photoemission possible when probing electrons from dopants at concentrations as low as a few hundredths of a percent.
Electronic Impurity Doping of a 2D Hybrid Lead Iodide Perovskite by Bi and Sn
Not Available
Unconventional magnetotransport and antiferromagnetic order in Eu 2 InTe 5
Here, we report on the structural characterization and physical properties of Eu 2 InTe 5 , a distorted square-net motif antiferromagnetic semiconductor. Single crystal x-ray diffraction measurements reveal a distortion of the Te square-net layers such that an orthorhombic supercell is necessary to accurately describe the structure. Magnetization, resistivity, and specific heat measurements confirm antiferromagnetic ordering at 𝑇 𝑁 = 7.3K. Anisotropy in magnetization data suggests the magnetic moments are oriented parallel to the 𝑐 axis. We observe an unconventional transverse magnetoresistance and Hall resistivity in the paramagnetic state (𝑇 ≤ 80K), indicating strong coupling between localized Eu 2+ magnetic moments and conduction electrons. Resistivity and Hall measurements indicate the material is a heavily doped semiconductor, with impurity states related to disorder. Our findings highlight a relatively unexplored Eu-based antiferromagnetic semiconductor with unconventional magnetotransport behavior.
Application of physics-based ATF Material Models in Engineering Scale Assessment [Slides]
Presentation for a meeting on accident tolerant fuels. Brings together information from already cleared reports.
36 GHz travelling wave maser.
Traveling wave maser with 6 db amplification at 36 GHz, using Cr ion doped rutile as active material and superconducting magnet for DC magnetic field
Inorganic photochromic and cathodochromic recording materials
Inorganic photochromic and cathodochromic recording materials, examining transition metal doped strontium titanates, rare earth doped calcium fluorides and Fe or S doped sodalite
JPL lithium doped solar cell development program
One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.
Volatile products from the interaction of KCl(g) with Cr2O3 and LaCrO3 in oxidizing environments
Cooled target collection techniques and high pressure mass spectrometric sampling were used to measure the relative rates of oxidative vaporization and to identify the volatile products emanating from samples of chromia and Mg-doped lanthanum chromite. The materials were exposed to partial pressures of KCl with and without H2O in one atmosphere of slowly flowing oxygen at elevated temperatures. Chromia and fresh samples of lanthanum chromite exhibited enhanced rates of oxidative vaporization upon exposure to these reactants. Mass spectrometric identification showed that the enhancements resulted from the heterogeneous formation of complex molecules of the type KCl sub 1,2,3 CrO3 and KOH sub l,2 CrO3. Lanthanum chromite that had undergone prolonged oxidative vaporization exhibited no enhanced oxidation upon exposure to the reactants.
Design considerations for silicon HLE solar cells
The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.
Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates
Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.
Primary research efforts on exploring the commercial possibilities of thin film growth and materials purification in space
The progress made on research programs in the 1987 to 1988 year is reported. The research is aimed at producing thin film semiconductors and superconductor materials in space. Sophisticated vacuum chambers and equipment were attained for the epitaxial thin film growth of semiconductors, metals and superconductors. In order to grow the best possible epitaxial films at the lowest possible temperatures on earth, materials are being isoelectronically doped during growth. It was found that isoelectrically doped film shows the highest mobility in comparison with films grown at optimal temperatures. Success was also attained in growing epitaxial films of InSb on sapphire which show promise for infrared sensitive devices in the III-V semiconductor system.
Kinetics of Static Strain Aging in Polycrystalline NiAl-based Alloys
The kinetics of yield point return have been studied in two NiAl-based alloys as a function of aging time at temperatures between 300 and 700 K. The results indicate that the upper yield stress increment, Delta sigma(sub u) (i.e., stress difference between the upper yield point and the final flow stress achieved during prestraining), in conventional purity (CP-NiAl) and in high purity carbon-doped (NiAl-C) material first increased with a t(exp 2/3) relationship before reaching a plateau. This behavior suggests that a Cottrell locking mechanism is the cause for yield points in NiAl. In addition, positive y-axis intercepts were observed in plots of Delta sigma(sub u) versus t(exp 2/3) suggesting the operation of a Snoek mechanism. Analysis according to the Cottrell Bilby model of atmosphere formation around dislocations yields an activation energy for yield point return in the range 70 to 76 kJ/mol which is comparable to the activation energy for diffusion of interstitial impurities in bcc metals. It is, thus, concluded that the kinetics of static strain aging in NiAl are controlled by the locking of dislocations by Cottrell atmospheres of carbon atoms around dislocations.
Float-Zone Growth of Gel-xSix (x ? 10 at .%) Single Crystals: Influence of Thermocapillary and Solutocapillary Convection
Gel-xSix (x ? 10 at.%) single crystals have been grown with the float-zone technique applied within a monoellipsoid mirror furnace. The feed crystal consisted of synthesized GeO.95siO.05 polycrystalline material. Two Boron-doped (much much more than 1-2 (raised dot) 1017 at/cm3) crystals were grown under identical conditions using <100> Ge seeds. One Ge:Ga-doped (much much more than 1018 at/cm3) reference crystal was also grown in the same furnace. Compositional profiles were measured with an energy dispersive analysis by X-ray (EDAX). The maximum silicon concentration attained was 10 at.%. Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These are considered to be caused by solutal Marangoni convection, whose strength is assumed to be a direct function of silicon concentration, Theoretical considerations show that the flow direction, velocity, and strength varies significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk melt.
MMIC DHBT Common-Base Amplifier for 172 GHz
Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.
Piezoelectrically Enhanced Photocathodes
Doping of photocathodes with materials that have large piezoelectric coefficients has been proposed as an alternative means of increasing the desired photoemission of electrons. Treating cathode materials to increase emission of electrons is called "activation" in the art. It has been common practice to activate photocathodes by depositing thin layers of suitable metals (usually, cesium). Because cesium is unstable in air, fabrication of cesiated photocathodes and devices that contain them must be performed in sealed tubes under vacuum. It is difficult and costly to perform fabrication processes in enclosed, evacuated spaces. The proposed piezoelectrically enhanced photocathodes would have electron-emission properties similar to those of cesiated photocathodes but would be stable in air, and therefore could be fabricated more easily and at lower cost. Candidate photocathodes include nitrides of elements in column III of the periodic table . especially compounds of the general formula Al(x)Ga(1.x)N (where 0< or = x < or =.1). These compounds have high piezoelectric coefficients and are suitable for obtaining response to ultraviolet light. Fabrication of a photocathode according to the proposal would include inducement of strain in cathode layers during growth of the layers on a substrate. The strain would be induced by exploiting structural mismatches among the various constituent materials of the cathode. Because of the piezoelectric effect in this material, the strain would give rise to strong electric fields that, in turn, would give rise to a high concentration of charge near the surface. Examples of devices in which piezoelectrically enhanced photocathodes could be used include microchannel plates, electron- bombarded charge-coupled devices, image tubes, and night-vision goggles. Piezoelectrically enhanced photocathode materials could also be used in making highly efficient monolithic photodetectors. Highly efficient and stable piezoelectrically enhanced, ultraviolet-sensitive photocathodes and photodetectors could be fabricated by use of novel techniques for growing piezoelectrically enhanced layers, in conjunction with thinning and dopant-selective etching techniques.
High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites
The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.
Fiber-Based Distributed Hydrogen Measurement at High Temperatures
In this work, we discuss the implementation of evanescent field optical fiber sensors for distributed gas sensing of H2, focusing on results using a Ni / Gd-doped CeO2 nanocomposite sensing material for detection of low levels of H2 (0-4%) at 700 °C. This approach utilizes sensors prepared using a low-cost, wet chemical deposition process, in conjunction with a custom-built interrogator system leveraging optical time domain reflectometry (OTDR). Using a specially designed dual-gas flow reactor system, the sensor is tested by establishing a controlled equilibrium gradient of gas concentration. Initial results are shown using silica fiber, but provides a pathway for utilization with high temperature stable single crystal optical fiber for operation at higher temperatures and higher levels of H2 relevant for solid oxide fuel cell (SOFC) operating conditions.