Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Boron”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21

Bremsstrahlung constraints on proton-boron 11 inertial fusion

Proton-boron 11 (pB11) fusion is relatively safe and clean, but difficult to use for net power production, since bremsstrahlung radiation tends to radiate away power more quickly than it can be generated by fusion power, particularly once poisoning by alpha particles is taken into account. While in magnetic confinement fusion, this problem can be addressed by deconfining the alphas, in inertial confinement fusion (ICF), the alphas that heat the plasma linger for the duration of the reaction. Thus, it becomes essential to trap the bremsstrahlung radiation in the hotspot. Through burn simulations incorporating bremsstrahlung emission and reabsorption, we infer the necessary conditions to capture enough radiation to produce scientific breakeven in a pB11 ICF plasma. We find that breakeven requires a stagnation areal density roughly two orders of magnitude higher than the current state-of-the-art, at pressures three orders of magnitude higher.

Alpha particles↗

High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma

Boron carbide (B 4 C) is an attractive inertial confinement fusion ablator material. The fabrication of B4C ablators by magnetron sputtering requires process optimization. To increase process flexibility, here we explore high-power impulse magnetron sputter (HiPIMS) deposition of B 4 C in pure Ar and mixed Ar-Ne plasmas. Here, the results show that higher plasma discharge currents can be reached with a mixed Ar-Ne plasma in the entire working pressure range studied (5 𝑡𝑜 50 mTorr). At 45 mTorr with 10% of Ne in the Ar-Ne mix, high peak target current densities of ~1 A cm −2 were demonstrated. Films deposited with such a mixed Ar-Ne plasma with a full-face erosion magnetron source on substrates biased at −25 V exhibited higher density and improved mechanical properties, albeit with higher compressive residual stresses compared to the case of HiPIMS deposition in a pure Ar plasma. This work demonstrates additional process flexibility of the HiPIMS discharge mode for the deposition of B 4 C coatings.

Ablator capsule↗

Catalytic reduction of carbon dioxide to methanol over defect-laden hexagonal boron nitride: insights into reaction mechanisms

Abstract We present a density functional theory-based mechanistic understanding of CO 2 hydrogenation to value-added products on a nitrogen-vacancy (V N ) defect in hexagonal boron nitride ( dh -BN). Activation occurs through back-donation to the π * orbitals of CO 2 from the frontier orbitals (defect state) of the h- BN sheet that are localized near a nitrogen-vacancy. Subsequent hydrogenation to methanol (CH 3 OH) and formic acid (HCOOH) proceed through vacancy-facilitated co-adsorption of hydrogen and CO 2 . More importantly, our reaction pathway analyses complimented by microkinetic modeling indicate that dh -BN is potentially a low-temperature, selective catalyst for CO 2 reduction to methanol. Our findings are in agreement with experiments conducted in a mechanical reactor that show high selectivity towards methanol formation for CO 2 hydrogenation on defect induced h- BN.

Jiang, Tao (ORCID:0000000304197288)↗

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm -1 . Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 x 10 9 cm -2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO 2 /Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm -2 /(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Stability analysis of WEST L-mode discharges with improved confinement from boron powder injection

WEST L-mode plasmas with dominant electron heating and no core torque source have observed improvements in confinement during boron (B) powder injection. These results are reminiscent of previous powder injection experiments on other devices and gaseous impurity seeding experiments on WEST. During powder injection, the stored energy increased up to 25% due to enhanced ion and electron heat and particle confinement. The improvements in confinement were not indicative of an L-H transition. To identify the dominant mechanisms and the causality chain behind these improvements in confinement, we employ interpretative modeling using METIS, predictive integrated modeling using a high-fidelity plasma simulator (HFPS), and stand-alone gyrokinetic simulations using quasi-linear gyrokinetic code. Interpretative modeling with METIS allowed for the estimation of missing data while maintaining good overall consistency with experiment. These results provided the initial conditions for fully predictive flux driven simulations using the HFPS. From these simulations, quasi-linear gyrokinetic analysis was performed at ρ = 0.5 and ρ = 0.65. Collisionality was found to be a strong candidate for the turbulence suppression mechanism at ρ = 0.5, while a combination of collisionality and the T e /T i ratio was found to be the likely mechanism at ρ = 0.65. The results additionally suggested that increased Z eff (through main ion dilution) could play a role in the improved confinement, but this could not be confirmed due to a lack of experimental measurements. The modeling framework established here can now be used to evaluate and exploit a variety of future powder injection experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Suppression of edge localized modes with real-time boron injection using the tungsten divertor in EAST

We report an observation of robust suppression of edge-localized modes (ELMs) in the Experimental Advanced Superconducting Tokamak (EAST), enabled by continuous boron (B) powder injection. Edge harmonic oscillations appear during B powder injection, providing sufficient particle transport to maintain constant density and avoid impurity accumulation in ELM-stable plasmas. Here, quasi-steady ELM suppression discharges are demonstrated with modest energy confinement improvement and over a wide range of conditions: heating power and technique variation, electron density range over a factor ~3.5, deuterium or helium ion species, and with either direction of the toroidal magnetic field. ELM suppression is observed above a threshold edge B intensity and ceases within 0.5 s of termination of the B injection. In contrast to ELM suppression accompanied by recycling reduction during Li powder injection in NSTX and EAST (Maingi et al 2018 Nucl. Fusion 58 024003), reduced recycling due to hydrogenic species retention is unnecessary for the ELM suppression with B powder injection, paving the way for its consideration as an ELM control tool for future fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Abstract Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g cm −3 ), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of aBN upon hydrogen doping. With the introduction of a Gaussian approximation potential for atomistic simulations, we investigate the changing morphology of aBN with varying H doping concentrations. We found that for 8 at% of H doping, the concentration ofsp 3 -hybridized atoms reaches to a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of aBN films for numerous applications.

Materials Science↗

Exploring dielectric properties in atomistic models of amorphous boron nitride

Abstract We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about 100 atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about 10.000 atoms) embedding varying concentrations of sp 1 , sp 2 and sp 3 bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.

Materials Science↗

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photoluminescence, photophysics, and photochemistry of the V B - defect in hexagonal boron nitride

Extensive photochemical and spectroscopic properties of the V B - defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically detected magnetic resonance is most likely of (1) 3 E'' → (1) 3 A' 2 origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetime and very low quantum yield. New experimental results reveal smaller intrinsic spectral bandwidths than previously recognized, interpreted in terms of spectral narrowing and zero-phonon-line shifting induced by the Jahn-Teller effect. Different types of computational methods are applied to map out the complex triplet and singlet defect manifolds, including the doubly ionized formulation of the equation-of-motion coupled-cluster theory that is designed to deal with the open-shell nature of defect states, and mixed quantum-mechanics/molecular-mechanics schemes enabling 5763-atom simulations. Finally, two other energetically feasible spectral assignments from among the singlet and triplet manifolds are considered, but ruled out based on inappropriate photochemical properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Moiré commensurability and the quantum anomalous Hall effect in twisted bilayer graphene on hexagonal boron nitride

The quantum anomalous Hall (QAH) effect is sometimes observed in twisted bilayer graphene (tBG) when it is nearly aligned with an encapsulating hexagonal boron nitride (hBN) layer. We propose that the appearance or absence of the QAH effect in individual devices could be related to commensurability between the graphene/graphene and graphene/hBN moiré patterns. We identify a series of points in the (θ GG , θ GBN ) twist-angle space at which the two moiré patterns are commensurate, allowing moiré band theory to be applied, and we show that the band Chern numbers are in this case sensitive to a rigid in-plane hBN displacement. Given this property, we argue that the QAH effect is likely only when (i) the (θ GG , θ GBN ) twist-angle-pair is close enough to a commensurate point that the two moiré patterns yield a supermoiré pattern with a sufficiently long length scale, and (ii) the supermoiré has a percolating topologically nontrivial QAH phase. For twist angles far from commensurability, the hBN layer acts as a source of disorder that can destroy the QAH effect. Our proposal can explain a number of current experimental observations. Finally, further experimental studies that can test this proposal more directly are suggested.

36 MATERIALS SCIENCE↗

Benchmarking boron carbide equation of state using computation and experiment

Boron carbide ( B 4 C ) is of both fundamental scientific and practical interest due to its structural complexity and how it changes upon compression, as well as its many industrial uses and potential for use in inertial confinement fusion (ICF) and high-energy density physics experiments. Here, we report the results of a comprehensive computational study of the equation of state (EOS) of B 4 C in the liquid, warm dense matter, and plasma phases. Our calculations are cross-validated by comparisons with Hugoniot measurements up to 61 megabar from planar shock experiments performed at the National Ignition Facility (NIF). Our computational methods include path integral Monte Carlo, activity expansion, as well as all-electron Green's function Korringa-Kohn-Rostoker and molecular dynamics that are both based on density functional theory. We calculate the pressure-internal energy EOS of B 4 C over a broad range of temperatures ( ~ 6 × 10 3 – 5 × 10 8 K) and densities (0.025–50 g / cm 3 ). We assess that the largest discrepancies between theoretical predictions are ≲ 5 % near the compression maximum at 1– 2 × 10 6 K. This is the warm-dense state in which the K shell significantly ionizes and has posed grand challenges to theory and experiment. By comparing with different EOS models, we find a Purgatorio model (LEOS 2122) that agrees with our calculations. The maximum discrepancies in pressure between our first-principles predictions and LEOS 2122 are ~ 18 % and occur at temperatures between 6 × 10 3 – 2 × 10 5 K, which we believe originate from differences in the ion thermal term and the cold curve that are modeled in LEOS 2122 in comparison with our first-principles calculations. To account for potential differences in the ion thermal term, we have developed three new equation-of-state models that are consistent with theoretical calculations and experiment. We apply these new models to 1D hydrodynamic simulations of a polar direct-drive NIF implosion, demonstrating that these new models are now available for future ICF design studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Improving the feasibility of economical proton-boron-11 fusion via alpha channeling with a hybrid fast and thermal proton scheme

The proton-boron-11 (p-B11) fusion reaction is much harder to harness for commercial power than the easiest fusion reaction, namely, the deuterium and tritium (DT) reaction. The p-B11 reaction requires much higher temperatures, and, even at those higher temperatures, the cross section is much smaller. However, as opposed to tritium, the reactants are both abundant and nonradioactive. It is also an aneutronic reaction, thus avoiding radioactivity-inducing neutrons. Economical fusion can only result, however, if the plasma is nearly ignited; in other words if the fusion power is at least nearly equal to the power lost due to radiation and thermal conduction. Because the required temperatures are so high, ignition is thought barely possible for p-B11, with fusion power exceeding the bremsstrahlung power by only around 3%. We show that there is a high upside to changing the natural flow of power in the reactor, putting more power into protons, and less into the electrons. This redirection can be done using waves, which tap the alpha particle power and redirect it into protons through alpha channeling. Using a simple power balance model, we show that such channeling could reduce the required energy confinement time for ignition by a factor of 2.6 when energy is channeled into thermal protons, and a factor of 6.9 when channeled into fast protons near the peak of the reactivity. Furthermore, alpha channeling could dramatically improve the feasibility of economical p-B11 fusion energy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Carbon trimer as a 2 eV single-photon emitter candidate in hexagonal boron nitride: A first-principles study

The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well recognized; however, the atomic nature of these emitters is unknown. In this Letter, we use first-principles calculations to demonstrate that carbon trimer substitutional defect (C 2 C N ) is a possible source of 2 eV single-photon emitter in hBN. Here, we showcase the calculations of a complete set of static and dynamical properties related to quantum defects, including exciton-defect couplings and electron-phonon interactions, from both density functional theory and many-body perturbation theory. In particular, we show that it is critical to consider both radiative and nonradiative processes when comparing with experimental lifetime for known 2 eV emitters. We find that C 2 C N has several key physical properties matching the ones of experimentally observed single-photon emitters. These include the zero-phonon line (2.13 eV), Huang-Rhys factor (1.35), photoluminescence lifetime (2.19 ns), phonon-sideband energy (180 meV), and photoluminescence spectrum. The identification of defect candidates for 2 eV emission paves the way for controllable single-photon emission generation.

36 MATERIALS SCIENCE↗

Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCI3 and APCVD boron diffusion

The aim of this study was to develop a simple and industrially attractive co-anneal process to fabricate a high-quality DS-TOPCon precursor with textured n-TOPCon on front and planar p- TOPCon on rear by ex-situ POCI3 and APCVD boron diffusion. This requires only one high temperature anneal with no additional masking steps. Excellent iVOC of 733mV and iFF of ~86% were achieved after SiNX passivation on both sides, prior to contact firing. Our device modeling projects that this precursor in combination with a manufacturing-friendly poly-Si patterning technique on front can enable> 25% DS-TOPCon cells at low-cost.

APCVD↗

Neutron Response of the EJ-254 Boron-Loaded Plastic Scintillator

Organic scintillators doped with capture agents provide a detectable signal for neutrons over a broad energy range. This work characterizes the fast and slow neutron response of EJ-254, an organic plastic scintillator with 5 loading by weight. For fast neutrons, the primary mechanism for light generation in organic scintillators is n-p elastic scattering. To study the fast neutron response, the proton light yield of EJ-254 was measured at the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. Using a broad-spectrum neutron source and a double time-of-flight technique, the EJ-254 proton light yield was obtained over the energy range of approximately 270 keV to 4.5 MeV and determined to be in agreement with other plastic scintillators comprised of the same polymer base. To isolate the slow neutron response, an AmBe source with polyethylene moderator was made incident on the EJ-254 scintillator surrounded by an array of EJ-309 observation detectors. Events in the EJ-254 target coincident with the signature 477.6 keV γ ray (resulting from de-excitation of the residual 7Li nucleus following boron neutron capture) were identified. Pulse shape discrimination was used to evaluate the temporal differences in the response of EJ-254 scintillation signals arising from γ-ray and fast/slow neutron interactions. Clear separation between γ-ray and fast neutrons signals was not achieved and the neutron capture feature was observed to overlap both the γ-ray and fast neutron bands. Taking into account the electron light nonproportionality, the neutron capture light yield in EJ-254 was determined to be 89.4±1.1 keVee.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Boron carbide films with reduced nodular defect density deposited by full-face erosion radio-frequency magnetron sputtering

Boron carbide coatings deposited by sputtering with conventional planar magnetrons exhibit nodular growth defects. Here, we demonstrate that the density of nodular defects in B 4 C films can be greatly reduced by using a full-face-erosion magnetron source that achieves a more uniform target erosion by sweeping the confining magnetic field over the target surface. Here, we systematically study properties of B 4 C films deposited on substrates with different tilt angles and demonstrate deposition of ultrathick films with compressive residual stress below 200MPa.

36 MATERIALS SCIENCE↗