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At least 379 records · Page 21

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NASA NTRS1985

Thermal conductivity of boron carbides

Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

Wood, C.↗

NASA NTRS1986

Growth of crystals of several boron-carbon compositions by chemical vapor deposition

Boron-carbon compounds have been deposited by the flow of carbon tetrachloride and boron trichloride, in the presence of a large excess of hydrogen, over a graphite surface maintained at 1000-1300 C. Deposits were formed on either an RF-heated disc or a tube or insert heated by a resistance furnace. Crystalline materials ranging in composition from B2C to B17C have been obtained.

Kevill, D. N.↗

NASA NTRS1986

Analysis of boron carbides' electronic structure

The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

Howard, Iris A.↗

NASA NTRS1987

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Tanaka, Hidehiko↗

NASA NTRS1988

Boron Carbides As Thermo-electric Materials

Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

Wood, Charles↗

NASA NTRS1988

Boron-containing organosilane polymers and ceramic materials thereof

The present invention relates to organic silicon-boron polymers which upon pyrolysis produce high-temperature ceramic materials. More particularly, it relates to the polyorganoborosilanes containing -Si-B- bonds which generate high-temperature ceramic materials (e.g., SiC, SiB4, B4C) upon thermal degradation. The process for preparing these organic silicon-boron polymer precursors are also part of the invention.

Riccitiello, Salvatore R.↗

NASA NTRS1988

Isotopic composition of cosmic-ray boron and nitrogen

New measurements of the cosmic-ray boron and nitrogen isotopes at earth and of the elemental abundances of boron, carbon, nitrogen, and oxygen are presented. A region of mutually allowed values for the cosmic-ray nitrogen source ratios is determined, and the cosmic-ray escape mean free path is determined as a function of energy using a leaky box model for cosmic-ray propagation in the Galaxy. Relative to O-16, a N-15 source abundance consistent with solar system composition and a N-14 source abundance which is a factor of about three underabundant relative to the solar value are found.

Krombel, K. E.↗

NASA NTRS1988

The role of boron and fluids in high temperature, shallow level metamorphism of the Chugach Metamorphic Complex, Alaska

The possible role of boron (B) involvement in granite equilibria and generation of melts during crustal metamorphism has been a focus of speculation in recent literature. Most of the evidence for such involvement derives from experimental data which implies that the addition of B will lower the temperature of the granite solidus. Also the presence of tourmaline has a minor effect on the temperature of the solidus. Further indirect evidence that B may be involved in partial melting processes is the observation that granulites are commonly depleted in B, whereas the B content of low grade metapelites can be high (up to 2000 ppm). Researchers' measurements of the whole-rock B contents of granulites from the Madras region, India are low, ranging from 0.4 to 2.6 ppm. Ahmad and Wilson suggest that B was mobilized in the fluid phase during granulite facies metamorphism of the Broken Hill Complex, Australia. Thus, it appears that during the amphibolite to granulite transition, B is systematically lost from metasediments. The B that is released will probably partition into the vapor phase and/or melt phase. Preliminary measurements imply that the boron content of rocks in the Chugach Metamorphic Complex is not sufficient to influence the processes of partial melting at low pressures.

Sisson, V. B.↗

NASA NTRS1989

Mechanical properties of particulate composites based on a body-centered-cubic Mg-Li alloy containing boron

The effect of substituting the Mg metal in Mg-B composites by a Mg-14 wt pct Li solid solution on the ductility of the resulting composite was investigated using elastic modulus measurements on the P/M composite material prepared with a dispersion of B particles (in a vol pct range of 0-30) in a matrix of Mg-14 wt pct Li-1.5 wt pct Al. It was found that the elastic modulus of the composites increased rapidly with increasing boron, with specific stiffness values reaching about two times that of most structural materials. The values of the compression and tensile strengths increased significantly with boron additions. Good tensile ductility was achieved at the level of 10 vol pct B. However, at 20 vol pct B, the Mg-Li composite exhibited only limited tensile ductility (about 2 percent total elongation).

Whalen, R. T.↗

NASA NTRS1990

Effect of boron on intergranular hot cracking in Ni-Cr-Fe superalloys containing niobium

Solidification mechanisms had a dominant influence on microfissuring behavior of the test group. Carbon modified the Laves formation significantly and showed that one approach to alloy design would be balancing carbide formers against Laves formers. Boron's strong effect on microfissuring can be traced to its potency as a Laves former. Boron's segregation to grain boundaries plays at best a secondary role in microfissuring.

Thompson, R. G.↗

NASA NTRS1992

Pyrolytic boron nitride coatings on ceramic yarns and fabrication of insulations

Pyrolytic boron nitride (PBN) was deposited on Nicalon NL 202 silicon carbide yarns at 1000 to 1200 C with the goal of improving the resistance of the Nicalon to deterioration in an aerodynamic environment at temperatures up to 1000 C. For continuous coating, the yarns were fed through the deposition chamber of a pilot plant sized CVD furnace at a rate of about 2 feet per minute. PBN coatings were obtained by reacting boron trichloride and ammonia gases inside the deposition chamber. Most of the PBN coatings were made at around 1080 C to minimize thermal degradation of the Nicalon. Pressures were typically below 0.1 Torr. The coated yarns were characterized by weight per unit length, tensile strength and modulus, scanning electron microscopy, and scanning Auger microscopy. The PBN coated Nicalon was woven into cloth, but was not entirely satisfactory as a high temperature sizing. Several 13 in. square pieces of Nicalon cloth were coated with PBN in a batch process in a factory sized deposition furnace. Samples of cloth made from the PBN coated Nicalon were sewn into thermal insulation panels, whose performance is being compared with that of panels made using uncoated Nicalon.

Moore, Arthur W.↗

NASA NTRS1992

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Lin, T. L.↗

NASA NTRS1993

Detection of boron, cobalt, and other weak interstellar lines toward Zeta Ophiuchi

Numerous weak lines from interstellar atomic species toward Zeta Ophiuchi were observed with the Goddard High-Resolution Spectrograph. Of particular note are the first interstellar detection of cobalt and the detection of boron in this sight line. These measurements provide estimates for the amount of depletion for the two elements. Boron, a volatile, and cobalt, a refractory element, display the depletion pattern found by Savage et al. (1992). The abundance of phosphorus in the H II region associated with the star was obtained from a detection of P III. Additional weak lines from S I, C I, Ni II, and Cu II were detected for the first time; these lines provide the basis for refinements in oscillator strength and column density. Analysis of the neutral sulfur data indicates that the atomic gas is more widely distributed than the molecular material in the main component.

Federman, S. R.↗

NASA NTRS1958

Boron and Zirconium from Crucible Refractories in a Complex Heat-Resistant Alloy

In a laboratory study of the factors involved in the influence of induction vacuum melting on 55ni-20cr-15co-4mo-3ti-3al heat resistant alloy, it was found that the major factor was the type of ceramic used as the crucible. The study concluded that trace amounts of boron or zirconium derived from reaction of the melt with the crucible refactories improved creep-rupture properties at 1,600 degrees F. Boron was most effective and, in addition, markedly improved hot-workability.

Decker, R F↗

NASA NTRS2000

Anisotropic Nanomechanics of Boron Nitride Nanotubes: Nanostructured "Skin" Effect

The stiffness and plasticity of boron nitride nanotubes are investigated using generalized tight-binding molecular dynamics and ab-initio total energy methods. Due to boron-nitride BN bond buckling effects, compressed zigzag BN nanotubes are found to undergo novel anisotropic strain release followed by anisotropic plastic buckling. The strain is preferentially released towards N atoms in the rotated BN bonds. The tubes buckle anisotropically towards only one end when uniaxially compressed from both. A "skin-effect" model of smart nanocomposite materials is proposed which will localize the structural damage towards the 'skin' or surface side of the material.

Srivastava, Deepak↗

NASA NTRS2003

Inexpensive Method for Coating the Interior of Silica Growth Ampoules with Pyrolytic Boron Nitride

An inexpensive method was developed for coating the interior of silica ampoules with hexagonal boron nitride. An aqueous solution of boric acid was used to coat the ampoule prior to drying in a vacuum at 200 C. This coating was converted to transparent boron nitride by heating in ammonia at 1000 C. Coated ampoules were used to achieve detached solidification of indium antimonide on earth.

Wang, Jianbin↗

NASA NTRS2004

Boron Nitride Nanotubes Synthesized by Pressurized Reactive Milling Process

Nanotubes, because of their very high strength, are attractive as reinforcement materials for ceramic matrix composites (CMCs). Recently there has been considerable interest in developing and applying carbon nanotubes for both electronic and structural applications. Although carbon nanotubes can be used to reinforce composites, they oxidize at high temperatures and, therefore, may not be suitable for ceramic composites. Boron nitride, because it has a higher oxidation resistance than carbon, could be a potential reinforcement material for ceramic composites. Although boron nitride nanotubes (BNnT) are known to be structurally similar to carbon nanotubes, they have not undergone the same extensive scrutiny that carbon nanotubes have experienced in recent years. This has been due to the difficulty in synthesizing this material rather than lack of interest in the material. We expect that BNnTs will maintain the high strength of carbon nanotubes while offering superior performance for the high-temperature and/or corrosive applications of interest to NASA. At the NASA Glenn Research of preparing BN-nTs were investigated and compared. These include the arc jet process, the reactive milling process, and chemical vapor deposition. The most successful was a pressurized reactive milling process that synthesizes BN-nTs of reasonable quantities.

Hurst, Janet B.↗

NASA NTRS2005

Boron Nitride Nanotubes-Reinforced Glass Composites

Boron nitride nanotubes of significant lengths were synthesized by reaction of boron with nitrogen. Barium calcium aluminosilicate glass composites reinforced with ~4 weight percent of BN nanotubes were fabricated by hot pressing. Ambient-temperature flexure strength and fracture toughness of the glass-BN nanotube composites were determined. The strength and fracture toughness of the composite were higher by as much as 90 and 35 percent, respectively, than those of the unreinforced glass. Microscopic examination of the composite fracture surfaces showed pullout of the BN nanotubes. The preliminary results on the processing and improvement in mechanical properties of BN nanotube reinforced glass matrix composites are being reported here for the first time.

Bansal, Narottam↗