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At least 361 records · Page 20

X-57 Cockpit Interface Control Document (ICD-CEPT-006)

The Cockpit Interface Control Document defines the hardware interfaces between the X-57 cockpit and subsystems. It provides locational and operational information in support of ground and flight operations with details on controls and displays that include Modes of Operation, Start-Up and Shut- Down Sequence diagrams and captures the current state of the MOD II Avionics Power Architecture. There is also preliminary information of the MOD III and MOD IV configurations. Microsoft PowerPoint was chosen for the document as early development required frequent meetings with multiple customers including aircraft operators (pilots), ground operations, support contractors and power, instrumentation, and human systems integration engineers and PowerPoint enabled presentations that could be quickly modified based on customer and developer interaction. One of the driving requirements for the cockpit design was to keep the left side panel as close the stock Tecnam panel as possible to reduce the failure risk of flight critical indicators. The original annunciator panel in the left side panel was modified to alert the pilot to failures in critical X-57 subsystems and an operator audio alert capability was added for these subsystems. Power-Up switches for the aircraft low voltage 13.8 VDC systems are located at the bottom of the left side panel and center panel, the same location as the stock Tecnam 13.8 VDC switches. The switches for energizing the high voltage system were located in the overhead panel to reduce the risk of inadvertently energizing the high voltage system during the low voltage power-up sequence. The Cruise Motor ARM switches were also located in the overhead panel and correspond to the same location as the stock Tecnam ignition switches. The stock Tecnam throttle levers and prop pitch levers were retained for the X-57. The throttle levers were renamed torque levers since they controlled the commanded torque to the cruise motors. The prop pitch levers provide a commanded RPM signal to an electronic prop pitch controller. X-57 specific displays, located in the right-side panel, are driven by dedicated sensors that monitor right and left side cruise motor RPM, right and left high voltage “Traction Bus” A and B (voltage, current and power) and the Avionics Bus DC converters (A and B) voltage and current. An X-57 Multi-Function Display (MFD) located in the center panel displays CAN Bus parameters. CAN Bus architecture is not certified for flight so these displays could not be used for safety critical information but were designed to be used for test point information only.

Laura Kushner↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

Control circuit ensures solar cell operation at maximum power

Control circuit enables a solar cell power supply to deliver maximum electrical power to a load. It senses the magnitude of the slope of the voltage-current characteristic curve and compares it to a reference voltage which represents the slope corresponding to the desired operating limits.

Paulkovich, J.↗

Proximity effect between superconducting and normal metals

Electrical characteristics of thin films of tin vapor deposited on gold substrates are described. Favorable characteristics of these films include: (1) shiny and smooth finishes; (2) higher Josephson critical currents; (3) smaller electronic mean paths; and (4) consistent current-voltage curve shapes. One unfavorable characteristic is a much steeper increase of the Josephson critical current with decreasing temperature. The functional variation of the Josephson current with the control current is described. Two functional forms have been observed and a brief description as to possible mechanisms for this behavior have been included.

Meissner, H.↗

Power-switch dV/dt sensing

Simple means for controlling voltage risetime and powerline noise used three transistors and capacitive feedback. Rate of change of voltage across load is reduced and controlled by circuit. Circuit is useful in situations where large wire bundles are subject to noise and crosstalk due to rapid current switching.

Jones, R. L.↗

High-efficiency silicon solar-cell design and practical barriers

A numerical evaluation technique is used to study the impact of practical barriers, such as heavy doping effects (Auger recombination, band gap narrowing), surface recombination, shadowing losses and minority-carrier lifetime (Tau), on a high efficiency silicon solar cell performance. Considering a high Tau of 1 ms, efficiency of a silicon solar cell of the hypothetical case is estimated to be around 29%. This is comparable with (detailed balance limit) maximum efficiency of a p-n junction solar cell of 30%. Value of Tau is varied from 1 second to 20 micro. Heavy doping effects, and realizable values of surface recombination velocities and shadowing, are then considered in succession and their influence on cell efficiency is evaluated and quantified. These practical barriers cause the cell efficiency to reduce from the maximum value of 29% to the experimentally achieved value of about 19%. Improvement in open circuit voltage V sub oc is required to achieve cell efficiency greater than 20%. Increased value of Tau reduces reverse saturation current and, hence, improves V sub oc. Control of surface recombination losses becomes critical at higher V sub oc. Substantial improvement in Tau and considerable reduction in surface recombination velocities is essential to achieve cell efficiencies greater than 20%.

Mokashi, A.↗

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗

Field-Oriented Control Of Induction Motors

Field-oriented control system provides for feedback control of torque or speed or both. Developed for use with commercial three-phase, 400-Hz, 208-V, 5-hp motor. Systems include resonant power supply operating at 20 kHz. Pulse-population-modulation subsystem selects individual pulses of 20-kHz single-phase waveform as needed to synthesize three waveforms of appropriate lower frequency applied to three phase windings of motor. Electric actuation systems using technology currently being built to peak powers of 70 kW. Amplitude of voltage of effective machine-frequency waveform determined by momentary frequency of pulses, while machine frequency determined by rate of repetition of overall temporal pattern of pulses. System enables independent control of both voltage and frequency.

Burrows, Linda M.↗

Switching and Rectification in Carbon-Nanotube Junctions

Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

Srivastava, Deepak↗

Recent Stirling Conversion Technology Developments and Operational Measurements

Under contract to the Department of Energy (DOE), Lockheed Martin Space Systems Company (LMSSC) has been developing the Advanced Stirling Radioisotope Generator (ASRG). The use of Stirling technology introduces a four-fold increase in conversion efficiency over Radioisotope Thermoelectric Generators (RTGs), and thus the ASRG in an attractive power system option for future science missions. In August of 2008, the ASRG engineering unit (EU) was delivered to NASA Glenn Research Center (GRC). The engineering unit design resembles that of a flight unit, with the exception of electrical heating in place of a radioisotope source. Prior to delivery, GRC personnel prepared a test station continuous, unattended operation of the engineering unit. This test station is capable of autonomously monitoring the unit's safe operation and recording. , .. , .... performance data. Generator parameters recorded include temperatures, electrical power output, and thelmal power input. Convertor specific parameters are also recorded such as alternator voltage, current, piston amplitude, and frequency. Since November 2008, the ASRG EU has accumulated over 4,000 hours of operation. Initial operation was conducted using the AC bus control method in lieu of the LMSSC active power factor connecting controller. Operation on the LMSSC controller began in February 2009. This paper discusses the entirety of ASRG EU operation thus far, as well as baseline performance data at GRC and LMSSC, and comparison of performance using each control method.

Oriti, Salvatore↗

Battery charge-discharge controller

Charge-discharge controller contains punched-tape programmer capable of programming 305 discrete steps in the battery load. The indicating instrumentation includes meters for ampere-hours, watt-hours, voltage, current, and internal temperature and pressure. It also generates analog signals for recording the displayed data.

Ciccanti, A. D.↗

Space station induced electromagnetic effects

Several mechanisms which can cause electric (E) and magnetic (B) field contaminations of the Space Station environment are identified. The level of E and B fields generated by some of them such as the motion of the vehicle across the ambient magnetic field B(0) and the 20-kHz leakage currents and charges can be controlled by proper design considerations. On the other hand, there are some mechanisms which are inherent to the interaction of large vehicles with the plasma and probably their contributions to E and B fields cannot be controlled; these include plasma waves in the wake and ram directions and the effects of the volume current generated by the ionization of neutrals. The interaction of high-voltage solar arrays with plasma is yet another rich source of E and B fields and it is probably uncontrollable. Wherever possible, quantitative estimates of E and B are given. A set of recommendations is included for further study in areas where indepth knowledge is seriously lacking.

Singh, N.↗

Charging/Safety-Interlock Connection For Capacitor Bank

Electrically controlled mechanical interlock apparatus prevents connection of bank of capacitors to battery or other dc power supply until capacitors precharged to nearly full supply voltage. Precharge eliminates excessive inrush current, which damages capacitors, wires, or connectors. Circuit in apparatus also discharges capacitors after power turned off or capacitors disconnected from power supply.

Rippel, Wally E.↗

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Jain, Raj K.↗

Design and test hardware for a solar array switching unit

This paper describes the control of a pulse width modulated (PWM) type sequential shunt switching unit (SSU) for spacecraft applications. It is found that the solar cell output capacitance has a significant impact on SSU design. Shorting of this cell capacitance by the PWM switch causes input current surges. These surges are minimized by the use of a series filter inductor. The system with a filter is analyzed for ripple and the control to output-voltage transfer function. Stable closed loop design considerations are discussed. The results are supported by modeling and measurements of loop gain and of closed-loop bus impedance on test hardware for NASA's 120 V Earth Observation System (EOS). The analysis and modeling are also applicable to NASA's 160 V Space Station power system.

Patil, A. R.↗

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current selections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness cases the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 micron coverglass thickness and 60 V for the sample with 150 micron coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low Earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness causes the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 m coverglass thickness and 60 V for the sample with 150 m coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗

Evaluation of Power Electronic Components and Systems at Cryogenic Temperatures For Space Missions

Power electronic circuits and systems designed for deep space applications and outer planetary exploration are required to operate reliably and efficiently under extreme temperature conditions. This requirement is dictated by the fact that the operational environments associated with some of the space missions would encompass temperatures as low as -183 C. The development and utilization of electronics capable of low temperature operation would not only fulfill the advanced technology requirements, but also would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. These benefits are generally achieved by the improved intrinsic properties of some of the electronic materials at low temperature, reduced device losses, and the elimination of heating elements used in conventional systems at low temperatures. Power electronic circuits are widely used in space power systems in the areas of power management, conditioning, and control. In this work, the performance of certain power electronic components and systems was investigated under low temperature. These include inductors, capacitors, pulse-width-modulation (PWM) controllers, and advanced commercial DC/DC converter modules. Different properties were determined as a function of temperature in the range of 20 C to -140 C, at various current and voltages levels. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗