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At least 361 records · Page 20

Numerical design considerations for vapor transport deposition of metal-halide perovskite thin films

While metal-halide perovskites (MHPs) offer high efficiency and potential application in single junction and tandem solar cells, challenges remain in translating solution-based methods to commercial-scale production. Vapor transport deposition (VTD) offers advantages such as precise control over film composition and purity, as well as the possibility of achieving high thin film deposition rates for scale-up. In this work, a numerical model is developed to simulate the deposition process, analyzing the impact of parameters including source material temperature, carrier gas and dilution gas flow rates, and chamber pressure to optimize deposition rates and film uniformity. Geometrical parameters, such as throw distance, are also found to significantly affect rate and uniformity. Furthermore, the modeling results presented here offer valuable insight for improving the scalability of VTD for the processing of metal-halide perovskites.

Chemical vapor deposition↗

Optimizing the Smoothness and Thickness Uniformity of Thin-Film Parylene-N Vapor-Deposited Coatings for Inertial Confinement Fusion Experiments

Polymer coatings with submicrometer smoothness and constant thickness are a required component in a variety of inertial confinement fusion experiments. Smoothness is important for minimizing Rayleigh-Taylor-driven hydrodynamic instabilities, and uniform thickness is important for uniform shock propagation and shell convergence, both of which are critical phenomena that affect the experiment. The preferred polymer coating method is to vapor deposit the parylene-N polymer because it provides nominally smooth conformal coatings. As the coating thickness exceeds 5 µm, however, dome-shaped nodular growth defects develop and the thickness will vary by up to 17% over a distance of 3 cm. This study presents a deterministic method for achieving uniform film thicknesses with ±2% variability over 3 cm and a predictive method to control the thickness to within 5% of the desired value. A coating smoothness of ∼50 nm rms, measured over 40 000 µm 2 , was achieved by adding additional surfaces near the substrates. This additional area improved the thickness uniformity, an effect that is attributed to the low sticking coefficient of the parylene monomer.

chemical vapor deposition (CVD)↗

One-dimensional twisted and tubular structures of zinc oxide by semiconductor-catalyzed vapor–liquid–solid synthesis

The exploration of unconventional catalysts for the vapor-liquid-solid synthesis of one-dimensional materials promises to yield new morphologies and functionality. Here, we show, for the model ZnO system, that unusual nanostructures can be produced via a semiconductor (Ge) catalyst. As well as the usual straight nanowires, we describe two other distinct morphologies: twisted nanowires and twisted nanotubes. The twisted nanotubes show large hollow cores and surprisingly high twisting rates, up to 9°/μm, that cannot be easily explained through the Eshelby twist model. A combination of ex situ and in situ transmission electron microscopy measurements suggest that the hollow core results from a competition between growth and etching at the Ge-ZnO interface during synthesis. The twisting rate is consistent with a softening of elastic rigidity. Finally, these results indicate that the use of unconventional, nonmetallic catalysts provides opportunities to synthesize unusual oxide nanostructures with potentially useful properties.

36 MATERIALS SCIENCE↗

The properties of the nitrogen-vacancy center in milled chemical vapor deposition nanodiamonds

Fluorescent nanodiamonds (FNDs) containing negatively charged nitrogen-vacancy (NV − ) centers are vital for many emerging quantum sensing applications from magnetometry to intracellular sensing in biology. However, developing a scalable fabrication method for FNDs hosting color centers with consistent bulk-like photoluminescence (PL) and spin coherence properties remains a highly desired but unrealized goal. Here, we investigate optimized ball milling of single-crystal diamonds produced via chemical vapor deposition (CVD) and containing 2 ppm of substitutional nitrogen and 0.3 ppm of NV − to achieve this goal. The NV charge state, PL lifetime, and spin properties of bulk CVD diamond samples are directly compared to milled CVD FNDs and commercial high-pressure high-temperature (HPHT) FNDs. We find that on average, the relative contribution of the NV − charge state to the total NV PL is lower and the NV PL lifetime is longer in CVD FNDs compared to HPHT FNDs, both likely due to the lower N s 0 concentration in CVD FNDs. The CVD bulk and CVD FNDs on average show similar average T 1 spin relaxation times of 3.2 ± 0.7 ms and 4.7 ± 1.6 ms, respectively, compared to 0.17 ± 0.01 ms for commercial HPHT FNDs. Our results demonstrate that ball milling of CVD diamonds enables the large-scale fabrication of NV ensembles in FNDs with bulk-like T 1 spin relaxation properties.

chemical vapor deposition↗

Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se 2 Semiconductor Thin Films

The recrystallization by indium chloride of Cu(In,Ga)Se 2 thin films deposited by co-evaporation at 350°C was studied. The process of recrystallization consists of the postdeposition treatment of CIGS sample by InCI3 vapor for 30 minutes with emphasis on grain growth. Here, the treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.

14 SOLAR ENERGY↗

Systemic effects of rising atmospheric vapor pressure deficit on plant physiology and productivity

Abstract Earth is currently undergoing a global increase in atmospheric vapor pressure deficit (VPD), a trend which is expected to continue as climate warms. This phenomenon has been associated with productivity decreases in ecosystems and yield penalties in crops, with these losses attributed to photosynthetic limitations arising from decreased stomatal conductance. Such VPD increases, however, have occurred over decades, which raises the possibility that stomatal acclimation to VPD plays an important role in determining plant productivity under high VPD. Furthermore, evidence points to more far‐ranging and complex effects of elevated VPD on plant physiology, extending to the anatomical, biochemical, and developmental levels, which could vary substantially across species. Because these complex effects are typically not considered in modeling frameworks, we conducted a quantitative literature review documenting temperature‐independent VPD effects on 112 species and 59 traits and physiological variables, in order to develop an integrated and mechanistic physiological framework. We found that VPD increase reduced yield and primary productivity, an effect that was partially mediated by stomatal acclimation, and also linked with changes in leaf anatomy, nutrient, and hormonal status. The productivity decrease was also associated with negative effects on reproductive development, and changes in architecture and growth rates that could decrease the evaporative surface or minimize embolism risk. Cross‐species quantitative relationships were found between levels of VPD increase and trait responses, and we found differences across plant groups, indicating that future VPD impacts will depend on community assembly and crop functional diversity. Our analysis confirms predictions arising from the hydraulic corollary to Darcy's law, outlines a systemic physiological framework of plant responses to rising VPD, and provides recommendations for future research to better understand and mitigate VPD‐mediated climate change effects on ecosystems and agro‐systems.

54 ENVIRONMENTAL SCIENCES↗

Chemical vapor infiltration of additively manufactured preforms: Pore-resolved simulations and experimental validation

The densification of additively manufactured porous preforms by chemical vapor infiltration (CVI) is studied using pore-resolved simulations and experiments. Experimentally, 3D printed silicon carbide (SiC) preforms are subject to CVI synthesis using methyltrichlorosilane (MTS) precursor to obtain high purity SiC/SiC composites. Optical images of the cross sections of the processed preforms are analyzed to obtain the spatial porosity distribution. The numerical method is based on a level set formulation to capture the spatial distribution and time evolution of the pore scale microstructural characteristics. The coupled transport and kinetic effects are represented using a dimensionless Thiele modulus. Simulations are initialized using representative synthetic preform geometries comprising of packed particles based on the size distribution of the powder used for 3D printing. The simulation results are validated against the experimental observations in terms of total density and the distribution of residual porosity. The densification characteristics, porosity classification, concentration profiles, and structure functions are analyzed as functions of processing temperature and Thiele modulus.

36 MATERIALS SCIENCE↗

Effects of temperature inversion on densification in chemical vapor infiltration

In a classical chemical vapor infiltration (CVI) process, the competing effects of chemical kinetics and reagent gas transport lead to non–uniform depositions such that outer layers of a preform densify faster leaving the core highly porous. Currently, CVI must be performed at a sufficiently low temperature to achieve good densification quality which leads to high processing time and cost. Volumetric heating of the preform, especially through microwaves, can create temperature inversion such that the core is hotter than the outer surface and potentially, overcome the challenges associated with isothermal CVI. Direct numerical simulations (DNS) of densification under various such temperature distributions indicate that microwave heating in CVI processing can lead to better (uniform) densification of porous preforms. Here the role of key parameters describing the temperature distributions on the densification behavior is investigated. Strategic temporal control of the temperature distribution shows that processing times can be reduced by almost half while maintaining a good densification quality similar to that of low–temperature isothermal processing. Inside–out densification due to the inverted temperature profile is a key distinguishing characteristic of microwave assisted CVI.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Modeling Microwave-Enhanced Chemical Vapor Infiltration Process for Preventing Premature Pore Closure

The chemical vapor infiltration (CVI) process involves infiltrating a porous preform with reacting gases that undergo chemical transformation at high temperatures to deposit the ceramic phase within the pores, ultimately leading to a dense composite. The conventional CVI process in composite manufacturing needs to follow an isothermal approach to minimize temperature differences between the external and internal surfaces of the preform, ensuring that reactive gases infiltrate internal pores before external surfaces seal. Here, this study addresses the challenge of premature pore closure in CVI processes through microwave heating. A frequency-domain microwave solver is developed in OpenFOAM to investigate volumetric heating mechanisms within the preform. Through numerical studies, we demonstrate the capability of microwave heating of creating an inside-out temperature inversion. This inversion accelerates reactions proximal to the preform center, effectively mitigating the risk of premature external pore closure and ensuring uniform densification. The results reveal a significant enhancement in temperature inversion when high-permittivity reflectors are incorporated to generate resonant waves. This microwave heating strategy is then coupled with high-fidelity direct numerical simulation (DNS) of reacting flow, enabling the analysis of resulting densification processes. The DNS includes detailed chemistry and realistic diffusion coefficients. The numerical results can be used to estimate the impact of microwave-induced temperature inversion on densification in productions.

42 ENGINEERING↗

Growth of Nb 3 Sn coating in tin vapor-diffusion process

The potential of Nb 3 Sn for superconducting radio frequency (SRF) cavities is widely recognized and renewed R&D efforts continue to bring new insights about the material's structure and properties. Here, we have systematically coated niobium with Nb 3 Sn for different durations, and several of them were coated over ("overcoat") multiple times, to elucidate the growth kinetics of Nb 3 Sn during tin vapor diffusion process. Analysis of coated samples is consistent with the model in which tin diffuses via grain boundaries to the Nb 3 Sn-Nb interface, where the growth of Nb 3 Sn into the Nb bulk takes place. Similar scaling laws were found for Nb 3 Sn grain growth and layer thickness. Non-parabolic layer growth is consistent with significant grain growth, which reduces the number of Sn transport channels. Examination of patchy region in Nb 3 Sn coating, revealing large single crystalline grains, points to impeded Nb 3 Sn layer growth due to low grain boundary density, resulting in a significantly thinner coating in those areas.

36 MATERIALS SCIENCE↗

Characterizing the composition, structure, and mechanical properties of magnetron sputtering physical vapor deposition TiN and TiSiN coatings

Ti(Si)N coatings were deposited on Si wafers via magnetron sputtering physical vapor deposition technique. Scanning electron microscopy and atomic force microscopy were used to study the morphologies, grain size, and thicknesses of the different films. X-ray diffraction confirmed the formation of the titanium nitride cubic phase. X-ray photoelectron spectroscopy (XPS) was used to study the silicon and oxygen levels in the films, and high resolution XPS was used to determine the surface oxide to nitride ratios as well as the silicon–nitrogen environment. The hardness of these films was then determined with nanoindentation. It was shown that grain size and film density could be controlled by the Si level and the ion bombardment to eliminate the oxygen level in the nitride coatings, which led to the harder films. It was suggested that due to the miscibility of Si, a ternary TiSiN solid solution was formed. Stronger (200) orientation of the TiN B1-NaCl crystals was associated with increased hardness of the coatings. In conclusion, this crystalline structure was preserved after incorporating Si.

36 MATERIALS SCIENCE↗

Magnetized, radiofrequency-driven hollow cathode chemical-vapor deposition of ultrathick hydrogenated amorphous carbon

Amorphous carbon is an attractive material for next-generation inertial confinement fusion (ICF) ablators due to its amorphous structure, tunable density, compatibility with dopants, chemical inertness, and mechanical robustness. Ablators are typically deposited as ultrathick (10–200 μm) coatings on removable spherical templates. The deposition of such thick amorphous carbon films is challenging due to high intrinsic compressive stress, which causes film buckling and delamination. Here, we study the deposition of amorphous carbon films by magnetized, radiofrequency-driven hollow cathode chemical vapor deposition with a custom-designed source in Ne plasmas. Emphasis is on the hollow-cathode source design and effects of the plasma discharge power and the precursor flow rate on film properties. We demonstrate deposition rates of >1 μm/h for films with hydrogen content of ∼40 at. %, densities of 1.1–1.7 g/cm 3 , and trace quantities of oxygen impurities. In conclusion, we also demonstrate the feasibility of depositing thick hydrogenated amorphous carbon films (∼30 μm) for ICF applications.

Carbon based materials↗

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga{sub 1 –x}In{sub x}P{sub 1 –y}As{sub y} solid solutions with average compositions of x = 0.77–0.87 and y = 0.07–0.42, the variation in the content y of V-group atoms over the epitaxial-layer thickness by a value of Δy up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in y occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases, y varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δy is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δy is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

InAs{sub (1 –} {sub y)}Sb{sub y}/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm

Asymmetric n-InAs/InAs{sub (1 –} {sub y)}Sb{sub y}/p-InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 μm at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

MWRRETV2 Value-Added Product Report: The Retrieval of Liquid Water Path and Precipitable Water Vapor from Microwave Radiometer – 3-Channel (MWR3C) Data Sets

This report provides a short description of the U.S. Department of Energy Atmospheric Radiation Measurement (ARM) user facility Microwave Radiometer – 3-Channel (MWR3C) Retrieval (MWRRETV2) Value-Added Product (VAP) algorithm. MWRRETV2 is an updated version of MWRRET, which extends the physical-iterative retrieval of liquid water path (LWP) and precipitable water vapor PWV) to 3-channel microwave radiometers beyond ARM's original standard 2-channel (23-and 31-GHz) systems. The 89-GHz channel in the 3-channel microwave radiometers has approximately three times the sensitivity to liquid water as the 31-GHz channel, thus improving LWP retrieval accuracy when LWP is less than 100 g/m2. We present a general overview of the technique, input parameters, and output products, and describe data quality checks.

47 OTHER INSTRUMENTATION↗

Identifying Controlling Variables Related to Mercury Vapor Concentrations in Legacy Facilities: SRNL Technology Development For D&D

A suite of sensor packages has been installed in the Alpha-4 facility at Y-12 and preliminary data analysis to isolate the controlling variables has been performed after two months of data collection. In line with the conceptual model presented in Section 2.0, the preliminary analysis has demonstrated that temperature, barometric pressure, and relative humidity are the key controlling variables for mercury vapor releases within the building. The data analysis will continue to explore these controlling variables across the next several months to capture a more complete picture of the annual change in meteorological conditions at Y-12.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Interface Engineering using Vapor Transport Deposited Perovskite Films for Solar Cells

The overarching goal of this project was to demonstrate the viability of vapor transport deposition (VTD) for the fabrication of efficient and stable metal-halide perovskite solar cells. VTD is a solvent-free alternative to conventional solution-processing of the light-absorbing, perovskite active layer. Since solution-processing frequently requires the use of toxic solvents, transition to a dry-processing approach has the potential to remove an obstacle to facile and economically meaningful commercialization. Further, VTD bears similarity to existing industrially-relevant processing approaches used for the production of thin-film CdTe solar modules, suggesting the potential for rapid adoption and transition to industry. The results described within this report offer design rules for the processing of metal-halide perovskites via VTD and new insights into the design of deposition systems to inform future applications.

14 SOLAR ENERGY↗