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At least 361 records · Page 20

Pouch cells with 15% silicon calendar-aged for 4 years

Small amounts of high-capacity silicon-based materials are already used in the anode of commercial Li-ion batteries, helping increase their energy density. Despite their remarkable storage capability, silicon continu-ously reacts with the electrolyte, accelerating time-dependent cell performance fade. Nevertheless, very limited information is available on the specific consequences of this reactivity for the calendar aging of Li-ion cells. Here, we analyze aging effects on 450 mAh pouch cells containing 15 wt% of Si (and 73 wt% graphite) after storage at 21 °C for four years. We show that severe losses of Si capacity occurred due to particle isolation when cells were stored at high states of charge (SOC), but not when cells were fully discharged prior to storage. Impedance rise was also significantly higher when cells were kept at high SOCs and was mostly due to phenomena taking place at the cathode; the continuous electrolyte reduction at the anode did not lead to a major increase in bulk electrode resistance. A series of post-test characterization provided additional information on the effects of time and SOC on the calendar aging of Si-containing cells. In conclusion, our study highlights the many challenges posed by Si during calendar aging and can inform future studies in the field.

25 ENERGY STORAGE↗

Scattering of phonons by edge dislocation and thermal conductivity of nanocrystalline silicon

For this work, the temperature dependent thermal conductivity of nanocrystalline silicon with the grain size of 500 nm, 144 nm, and 76 nm, was calculated based on the intrinsic phonon properties using a first-principles-based method and recent analytical theory of phonon-dislocation scattering. The results demonstrate, in the nanocrystalline silicon, that the low temperature (T) limit of thermal conductivity is directly proportional to T 2 instead of the conventional Casimir limit of T 3 . Calculated frequency-dependent scattering rates also indicate regimes of dominant scattering mechanisms: frequency-independent boundary scattering dominates in the very low phonon frequency regime of less than 0.6 THz; frequency-dependent boundary scattering dominates in the intermediate phonon frequency regime between 0.6 and 6 THz; and Umklapp scattering dominates in the high phonon frequency regime beyond 6 THz. The thermal conductivity is linear proportional to nanograin size in the region of d < 100nm and it shows independence at d > 1μm. This work proves the importance of dislocation-phonon scattering to thermal conductivity when the size of nanograins is small or at low temperature.

36 MATERIALS SCIENCE↗

The CLAS12 Silicon Vertex Tracker

Silicon Vertex Tracker (SVT) has been designed for the CLAS12 spectrometer using single-sided microstrip sensors fabricated by Hamamatsu Photonics. The sensors have a graded angle design to minimize dead areas and a readout pitch of 156 um, with intermediate strips. Each double-sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module, read out by four Fermilab Silicon Strip Readout (FSSR2) chips, featuring data-driven architecture, mounted on a rigid–flex hybrid board. The modules are assembled in a barrel configuration using a unique cantilevered geometry to minimize the amount of material in the tracking volume. This paper is focused on the design, qualification of the performance, and experience in operating and commissioning the tracker during the first year of the data taking.

47 OTHER INSTRUMENTATION↗

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High event rate analysis technique for the dual-axis duo-lateral position-sensitive silicon detectors of FAUST

The dual-axis duo-lateral (DADL) position-sensitive silicon detector was developed to obtain precise position and energy information for detected charged particles. The Forward Array Using Silicon Technology (FAUST) is currently equipped with 68 DADL detectors backed by CsI(Tl) scintillators for the study of charged particle correlations in heavy-ion collisions where precise position and energy information is essential. When conventional signal processing electronics were used for the DADL detectors, a position dependence of the measured energy as well as distortions in the calculated particle positions were observed. In previous work, waveforms from the detector after preamplification were studied to better understand the features that give rise to these distortions; therein, a waveform analysis technique was developed to improve the energy resolution and linearity in position reconstruction. However, the reading and writing of waveforms for an entire detector array limits data collection rates and adds significant burden in data storage and analysis speed. In this work, the integrators of a Struck SIS3316 ADC were utilized to process 228 Th source data to develop and optimize a new analysis method that captures the benefits of the waveform analysis technique while circumventing the waveform writing requirement. This integrator method – capable of 59 keV (FWHM) energy resolution – was used in the collection of 35 MeV/nucleon 28 Si + 12 C collision data using FAUST to investigate exotic decays of highly excited highly deformed nuclei. In this data, a position resolution of 0.4 mm (FWHM) was obtained for 25 MeV α-particles; for α-particles near this energy that originate from 8 Be ground state decays, a 8 Be ground state width of 30 keV (FWHM) was obtained. The impact of the energy-dependent DADL position resolution emergent from electronic noise on the quality of excited state measurement was modeled and compared to the experimental data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Beam test results of the Intermediate Silicon Tracker for sPHENIX

The Intermediate Silicon Tracker (INTT), a two-layer barrel silicon strip tracker, is a key component of the tracking system for sPHENIX at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory. The INTT is designed to enable the association of reconstructed tracks with individual RHIC bunch crossings. To evaluate the performance of preproduction INTT ladders and the readout chain, a beam test was conducted at the Research Center for Accelerator and Radioisotope Science, Tohoku University, Japan. This paper presents the performance of the INTT evaluated through studies of the signal-to-noise ratio, residual distribution, spatial resolution, hit-detection efficiency, and multiple track reconstruction.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Investigating the impact of preparation routes on the properties of copper-decorated silicon particles as anode materials for lithium-ion batteries

In recent years, the calendar life of Si has been recognized as a significant issue that must be addressed prior to technology deployment: The carbon conductive additive is a potential source of parasitic side reactions. However, carbon remains essential due to the low electronic conductivity of Si. In this study, we investigate the use of Cu as a conductive additive and potential alternative to carbon. Some Cu-decorated silicon particles (Si Cu ) were prepared using physical vapor deposition (PVD) via sputtering and high-energy milling. Other Si Cu particles were prepared by using a solution method and examined briefly. The milling method caused Cu to appear as island-like features on the Si surface, whereas the PVD method initially produced similar island-like features that gradually developed into a continuous coating around the Si as sputtering time increased. Electrodes fabricated from Si Cu exhibited lower overall resistivity, demonstrating the beneficial effect of Cu in improving electronic percolation through the electrode. Electrochemical tests showed that the milled SiCu exhibited higher capacity retention, improved rate capability, and lower overpotential. Furthermore, Si Cu coupled with an NMC811 cathode exhibited lower leakage currents compared with the baseline silicon, indicating that incorporating Cu provided an additional advantage of minimizing parasitic currents in the cells.

25 ENERGY STORAGE↗

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗

Constitutive Model of Radiation Aging Effects in Filled Silicone Elastomers under Strain

Filled silicone elastomers, an essential component in many technological applications, are often subjected to controlled or unintended radiation for a variety of reasons. Radiation exposure can lead to permanent mechanical and structural changes in the material, which is manifested as altered mechanical response, and in some cases, a permanent set. For unfilled elastomers, network theories developed and refined over decades can explain these effects in terms of chain-scission and cross-link formation and a hypothesis involving independent networks formed at different strain levels of the material. In this work, we expose a filled silicone rubber to gamma radiation while being under finite elongational strain and show that the observed mechanical and structural changes can be quantitatively modeled within the same theoretical framework developed for unfilled elastomers as long as nuances associated with the Mullins effect are accounted for in a consistent manner. In this work, we employ Ogden’s incompressible hyperelastic model within the framework of Tobolsky’s two-network scheme to describe the observed permanent set and mechanical modulus changes as a function of radiation dosage. In the process, we conclude that gamma radiation induces both direct cross-linking at chain crossings (H-links) and main-chain-scission followed by cross-linking (Y-links). We provide an estimate of the ratio of chain-scission to cross-linking rates, which is in reasonable agreement with previous experimental estimate from Charlesby–Pinner analysis. We use density functional theory (DFT)-based quantum mechanical calculations to explore the stability of –Si and –SiO radicals that form upon a radiation-induced chain-scission event, which sheds light on the relative rates of Y-linking and H-linking processes.

36 MATERIALS SCIENCE↗

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Purcell enhancement↗

Amidinate- and Dithiolene-Based Silicon Complexes

Reactions of the amidinato-silylene chloride PhC( t BuN) 2 SiCl (1) with imidazole-based dithione dimer 2, lithium dithiolene radical 3, and dithiolate dimer 4 result in the synthesis of a series of silicon complexes 5-7, respectively, containing both amidinato and dithiolene ligands. 7 is the first structurally characterized silicon(II) dithiolene complex. The structural and bonding characteristics of 5-7 have been probed by both experimental and theoretical methods.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Investigation of Reactive Silver Ink Formula for Reduced Silver Consumption in Silicon Heterojunction Metallization

Silver is the most expensive non-silicon component in photovoltaic cells. This is particularly salient for silicon heterojunction (SHJ) cells, which rely on large quantities of low-temperature silver pastes (LT-SP). SHJ cells would benefit greatly from an industrially scalable metallization process that simultaneously offers low silver consumption, low finger resistivities (<20 μΩ·cm), and low processing temperatures. Printed reactive silver inks (RSI) are an innovative candidate to this end. Furthermore, this work furthers the research on RSI metallization by investigating the impact of ink formula on properties pertinent to SHJ cells, including electrical properties, line width, ink splatter, silver consumption, cell performance, and adhesion. We introduce a scalable, high-throughput flexible needle contact printing approach for metallization that solves many of the issues associated with drop-on-demand printing. The printed silver fingers are characterized using electrical measurements and top-down and cross-sectional microscopy. The best performing ink, consisting of silver acetate, ethylamine, and formic acid, achieved silver fingers with total resistivities of 3.1 μΩ·cm and contact resistivities of 3.2 mΩ·cm 2 when printed at 61 °C. This ink metallized a full-sized 156 mm × 156 mm SHJ cell. This is the first reported data for RSI metallization of a full-sized SHJ cell and shows how an optimized RSI can achieve similar performances to LT-SP while consuming 80–90% less silver.

14 SOLAR ENERGY↗

Microscopic Observation of Solid Electrolyte Interphase Bilayer Inversion on Silicon Oxide

Silicon has been investigated in recent years as an alloying anode material to enhance gravimetric energy density in lithium-ion batteries. Although recent developments have suggested that silicon oxides exhibit improved cycling stability over pure Si, the origin of the improved cycling performance is still poorly understood. The initial solid electrolyte interphase (SEI) formation mechanisms on Si wafers with both native oxide and chemically etched thermal oxide coatings are investigated structurally, chemically, and morphologically in the nanoscale. After one electrochemical cycle, microscopy reveals that SEI formed on native SiO x features the typical SEI bilayer structure with a carbon-rich outer SEI layer and an inorganic-rich inner SEI layer. In contrast, the SEI formed on chemically etched thermal oxide shows an inversion in the structure. This work observes distinct initial SEI formation mechanisms on the HF-etched SiO 2 surface, which may be partially responsible for improved cycle life observed in SiO x -based anode materials.

25 ENERGY STORAGE↗

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗

Unraveling the Nature of Lasing Emission from Hybrid Silicon Nitride and Colloidal Nanocrystal Photonic Crystals with Low Refractive Index Contrast

Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.

BIC Lasing↗

Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms

We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.

Gerchberg-Saxton↗

Multiscale, mechanistic modeling of cesium transport in silicon carbide for TRISO fuel performance prediction

Understanding cesium (Cs) transport in TRistructural ISOtropic (TRISO) particle fuel is crucial for predicting fission product release in high-temperature reactors. However, current challenges include significant scatter in diffusivity data and unexplained temperature-dependent diffusion regimes in the silicon carbide layer. This study addresses these challenges by developing a multiscale, mechanistic Cs transport model integrating atomistic simulations and phase field modeling. Our model quantifies temperature and grain size effects on Cs diffusivity, attributing experimentally observed regimes to a transition from bulk-dominated diffusivity at high temperatures to grain boundary-dominated diffusivity at lower temperatures. The model, validated against diffusion measurements and advanced gas reactor (AGR)-1 and AGR-2 post-irradiation fission product release data, enhances the predictive capability of the BISON fuel performance code. This study advances our understanding of Cs release from TRISO particles and its dependence on temperature and silicon carbide grain size, with implications for the safety and efficiency of high-temperature nuclear reactors.

BISON↗