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Technical requirements for silicon-based bulk materials are presented, and related work on other materials and on thin layer silicon is summarized. Programs supported by the Wright-Patterson materials laboratory and the capabilities of the materials laboratory in house characterization facility are listed.
The ongoing revolution of the natural sciences by the advent of machine learning and artificial intelligence sparked significant interest in the material science community in recent years. The intrinsically high dimensionality of the space of realizable materials makes traditional approaches ineffective for large-scale explorations. Modern data science and machine learning tools developed for increasingly complicated problems are an attractive alternative. An imminent climate catastrophe calls for a clean energy transformation by overhauling current technologies within only several years of possible action available. Tackling this crisis requires the development of new materials at an unprecedented pace and scale. For example, organic photovoltaics have the potential to replace existing silicon-based materials to a large extent and open up new fields of application. In recent years, organic light-emitting diodes have emerged as state-of-the-art technology for digital screens and portable devices and are enabling new applications with flexible displays. Reticular frameworks allow the atom-precise synthesis of nanomaterials and promise to revolutionize the field by the potential to realize multifunctional nanoparticles with applications from gas storage, gas separation, and electrochemical energy storage to nanomedicine. In the recent decade, significant advances in all these fields have been facilitated by the comprehensive application of simulation and machine learning for property prediction, property optimization, and chemical space exploration enabled by considerable advances in computing power and algorithmic efficiency. In this Account, we review the most recent contributions of our group in this thriving field of machine learning for material science. We start with a summary of the most important material classes our group has been involved in, focusing on small molecules as organic electronic materials and crystalline materials. Specifically, we highlight the data-driven approaches we employed to speed up discovery and derive material design strategies. Subsequently, our focus lies on the data-driven methodologies our group has developed and employed, elaborating on high-throughput virtual screening, inverse molecular design, Bayesian optimization, and supervised learning. We discuss the general ideas, their working principles, and their use cases with examples of successful implementations in data-driven material discovery and design efforts. Furthermore, we elaborate on potential pitfalls and remaining challenges of these methods. Finally, we provide a brief outlook for the field as we foresee increasing adaptation and implementation of large scale data-driven approaches in material discovery and design campaigns.
The study of silicon sheet material requirements for high efficiency solar cells is reported. Research continued on obtaining long lifetime single crystal float zone silicon and on understanding and reducing the mechanisms that limit the achievement of long lifetimes. The mechanisms studied are impurities, thermal history, point defects, and surface effect. The lifetime related crystallographic defects are characterized by X-ray topography and electron beam induced current.
Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.
We present a computational investigation of the dependence of material erosion on the incident ion angle at rough graphite and silicon carbide divertor surfaces. Ion angle distributions (IADs) for D plasmas at NSTX-U and DIII-D divertors were calculated by an equation-of-motion model that traces the ion trajectories in the sheath. Then, the effective sputtering yields and ion shadowed area fractions were calculated by a Monte Carlo micro-patterning and roughness code that applied the calculated IADs to surface topographic data that were obtained from optical confocal microscopy of rough graphite and SiC divertor surfaces from NSTX-U and DIII-D experiments. The calculations found that the effective sputtering yields, the sputtering pattern, and the shadowed area are determined by the detailed surface topology rather than the root mean square roughness R RMS , which represents deviations from a flat surface. The suppression of the effective sputtering yields for rough surfaces compared to the yield for a smooth surface was accounted for by the change of the mean local incident ion angle (LIIA) (θ'). The mean surface inclination angle distribution (SIAD) (δ) was found to be a useful parameter to estimate the LIIA from the calculated IADs. We report global empirical formulas for the mean LIIA and fraction of the area shadowed from the main ions for D plasmas for rough surfaces with B-field incident angles α = 85°–89° as a function of the mean SIAD (δ). We propose the use of the mean LIIA (θ') to estimate the sputtering yield for rough surfaces from the angular dependence of the sputtering yield.
Industrial systems such as heat engines and heat exchangers involve harsh environments. The structural materials are subjected to high temperatures as well as corrosive gases and condensed phases. Past experience with metal alloys has shown that these condensed phases can be particularly corrosive and are often the limiting factor in the operation of these systems. In a heat engine the most common condensed corrodent is Na2SO4 whereas in a heat exchanger an oxide slag may be present. The primary emphasis is on Na2SO4 induced corrosion, however, similarities and differences to oxide slag are also discussed. The extensive research on corrosion of metal alloys has led to understanding and controlling corrosion for these materials. Currently silicon based ceramics are prime candidates for the applications discussed. Therefore it is important to understand the effects of condensed phase deposits on this emerging class of high temperature materials. Both the thermodynamic and strength of the ceramic is also examined. Finally some control strategies for corrosion of silicon based ceramics are explored.
Institutions need ways to retain valuable information even as experienced individuals leave an organization. Modern electronic systems have enough capacity to retain large quantities of information that can mitigate the loss of experience. Performance information for long-term space applications is relatively scarce and specific information (typically held by a few individuals within a single project) is often rather narrowly distributed. Spacecraft operate under severe conditions and the consequences of hardware and/or system failures, in terms of cost, loss of information, and time required to replace the loss, are extreme. These risk factors place a premium on appropriate choice of materials and components for space applications. An expert system is a very cost-effective method for sharing valuable and scarce information about spacecraft performance. Boeing has an artificial intelligence software package, called the Boeing Expert System Tool (BEST), to construct and operate knowledge bases to selectively recall and distribute information about specific subjects. A specific knowledge base to evaluate the on-orbit performance of selected materials on spacecraft has been developed under contract to the NASA SEE program. The performance capabilities of the Spacecraft Materials Selector (SMS) knowledge base are described. The knowledge base is a backward-chaining, rule-based system. The user answers a sequence of questions, and the expert system provides estimates of optical and mechanical performance of selected materials under specific environmental conditions. The initial operating capability of the system will include data for Kapton, silverized Teflon, selected paints, silicone-based materials, and certain metals. For situations where a mission profile (launch date, orbital parameters, mission duration, spacecraft orientation) is not precisely defined, the knowledge base still attempts to provide qualitative observations about materials performance and likely exposures. Prior to the NASA contract, a knowledge base, the Spacecraft Environments Assistant (SEA,) was initially developed by Boeing to estimate the environmental factors important for a specific spacecraft mission profile. The NASA SEE program has funded specific enhancements to the capability of this knowledge base. The SEA qualitatively identifies over 25 environmental factors that may influence the performance of a spacecraft during its operational lifetime. For cases where sufficiently detailed answers are provided to questions asked by the knowledge base, atomic oxygen fluence levels, proton and/or electron fluence and dose levels, and solar exposure hours are calculated. The SMS knowledge base incorporates the previously developed SEA knowledge base. A case history for previous flight experiment will be shown as an example, and capabilities and limitations of the system will be discussed.
During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.
Small amounts of high-capacity silicon-based materials are already used in the anode of commercial Li-ion batteries, helping increase their energy density. Despite their remarkable storage capability, silicon continu-ously reacts with the electrolyte, accelerating time-dependent cell performance fade. Nevertheless, very limited information is available on the specific consequences of this reactivity for the calendar aging of Li-ion cells. Here, we analyze aging effects on 450 mAh pouch cells containing 15 wt% of Si (and 73 wt% graphite) after storage at 21 °C for four years. We show that severe losses of Si capacity occurred due to particle isolation when cells were stored at high states of charge (SOC), but not when cells were fully discharged prior to storage. Impedance rise was also significantly higher when cells were kept at high SOCs and was mostly due to phenomena taking place at the cathode; the continuous electrolyte reduction at the anode did not lead to a major increase in bulk electrode resistance. A series of post-test characterization provided additional information on the effects of time and SOC on the calendar aging of Si-containing cells. In conclusion, our study highlights the many challenges posed by Si during calendar aging and can inform future studies in the field.
To meet the need for low cost silicon sheet material in the ERDA/JPL photovoltaics program, JPL has initiated a wide ranging technology development effort in crystal growth that includes several different technology thrusts. They range in scope from innovative ingot growth and multislice wafering, to shaped growth techniques, substrate-related processes and hot forming techniques. In this paper, some salient observations on materials resulting from these processes are reported. Included are multiblade wafering-induced damage studies, interface morphology studies on the heat exchanger cast silicon, some diffusion length measurements in thin silicon layers on ceramic substrates, and results on the equilibrium structure found in laser zone ribbon growth.
Research concerning the utilization of silicon piezoresistive strain sensing technology for space shuttle main engine applications is reported. The following specific topics were addressed: (1) transducer design and materials, (2) silicon piezoresistor characterization at cryogenic temperatures, (3) chip mounting characterization, and (4) frequency response optimization.
Initial sessile drop experiments on SiC, Si3N4 and A1N were conducted. Very promising results were achieved on both SiC and Si3N4 where minimal penetration of these CNTD coatings by molten silicon was observed. More detailed characterization of the CNTD microstructures was accomplished as well as X-ray characterization of the third and fourth candidate materials system sets (i.e. A1N and altered Si3N4). Polished sections of post sessile drop specimens were also prepared and evaluated. The techniques of full scale crucible hot pressing were developed and die grinding development was initiated. The apparatus for measurement of oxygen partial pressure was reconstructed and calibrated. The sessile drop temperature measurement procedure was calibrated for absorption by the pyrex view-port and additional Auger electron analysis was performed at the interface of molten silicon with CNTD Si3N4 and A1N.
The development of superconducting quantum processors relies on understanding and mitigating decoherence in superconducting qubits. Piezoelectric coupling contributes to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Although bulk centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubit substrates, the lack of centrosymmetry at interfaces may induce piezoelectric losses. This effect was predicted decades ago but never experimentally observed in superconducting devices. Here, we report interface piezoelectricity at aluminum-silicon junctions and demonstrate it as a significant loss channel in superconducting devices. Using aluminum interdigital transducers on silicon, we observe piezoelectric transduction from room to millikelvin temperatures, with an effective electromechanical coupling factor K 2 ≈ (3 ± 0.4) × 10−5%, comparable to weakly piezoelectric substrates. Modeling shows this mechanism limits qubit quality factors to Q ~ 10 4 − 10 8 , depending on surface participation and mode matching. These findings reveal interface piezoelectricity as a major dissipation channel and highlight the need for heterostructure and phononic engineering in next-generation superconducting qubits.
The results are described of the final stage of the research involving the role of anions in the behavior of magnesium oxide, as well as the continued efforts of the fracture behavior of silicon nitride materials. These efforts, particularly the first, are further sub-divided in subsections describing individual types of behavior of materials.
A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.
Researchers at the NASA Glenn Research Center are evaluating high-temperature materials for Stirling heater heads for second- and third-generation Stirling radioisotope power systems that would help to increase the system efficiency to 30 to 35 percent and the system specific power to 8 to 10+ W/kg. Ceramic materials could make it possible for the convertor hot-end temperature to be increased to 1050 to 1200 C, in comparison to the current 650 C with an Inconel 718 heater head. A hermetically sealed Stirling heater head must retain a constant internal pressure of nearly 400-psi helium (He) throughout its useful life (120,000 hr) at the design operating temperature. Therefore, He permeability was measured for eight potential materials and compared with the permeability of the current heater head material, Inconel 718. The eight materials included silicon nitride (Si3N4), silicon dioxide (SiO2), both sintered and chemical vapor deposited (CVD) silicon carbide (SiC), alumina (Al2O3), two types of melt-infiltrated (MI) SiC/SiC composites, and a carbon/SiC composite (C/SiC). Glenn submitted samples of each material to Porous Materials, Inc., Ithaca, New York, for permeability analysis. At room temperature and 30-psi He, four materials--Si3N4, Al2O3, SiO2, and sintered SiC--demonstrated lower permeability than Inconel 718. The CVD SiC and all the composite materials were significantly more permeable to He than the baseline material.
Volumetric energy density is considered a primary factor in developing high-energy batteries. Despite its significance, less efforts have been devoted to its improvement. Silicon-based materials have emerged as next-generation anodes for lithium-ion batteries due to their high specific capacity. However, their volumetric capacities are limited by the volume expansion rate of silicon, which restricts mass loading in the electrodes. To address this challenge, we introduce porous silicon templated from earth-abundant minerals with native internal voids, capable of alleviating volumetric expansion during repeated cycles. In situ transmission electron microscopy analysis allows the precise determination of the expansion rate of silicon, thus presenting an analytical model for finding the optimal content in silicon/graphite composites. The inner pores in silicon reduce problems associated with its expansion and allow higher silicon loading of 42% beyond the conventional limitations of 13–14%. Consequently, the anode designed in this work can deliver a volumetric capacity of 978 mAh cc–1. Thus, suppressing volume expansion with natural abundant template-assisted materials opens new avenues for cost-effective fabrication of high volumetric capacity batteries.
The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.