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355 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗
DOE OSTI2022

Initial Characterization of the Second A709 Commercial Heat

In fiscal year 2021, Idaho National Laboratory (INL) received the second commercial heat of A709 in the plate-product form, heat 529900. The chemistry, microstructure, and mechanical properties of this heat were characterized. Heat 529900 met the chemistry and mechanical property requirements specified for UNS S31025 in American Society for Testing and Materials (ASTM) A213 and American Society of Mechanical Engineers SA 213 for seamless tube which A709 was derived from. The microstructure of heat 529900 was comprised of equiaxed, recrystallized grains and elongated, unrecrystallized grains. The frequency of the unrecrystallized grains varied across the thickness of the plate with the highest frequency observed at the surface and none observed at the center. The equiaxed grain size of heat 529900 ranged from an ASTM grain size number 4 to an ASTM grain size number 6. The size of the equiaxed grains varied across the thickness of the plate with the coarsest grains located at the center of the plate. Additionally, the creep-fatigue properties of the second commercial heat were better than those of the first commercial heat.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Effect of successive heat treatment on the performance of superconducting radio frequency niobium cavities

One of the primary sources of radio frequency residual losses leading to lower quality factor is trapped residual magnetic field during the cooldown of superconducting radio frequency cavities. It has been reported that non-uniform recrystallization of niobium cavities after the post fabrication heat treatment leads to higher flux trapping during the cooldown, and hence the lower quality factor. Here, we fabricated two 1.3 GHz single cell cavities from high purity fine grain niobium and processed with successive heat treatments in the range 800-1000 ?C to measure the flux expulsion and flux trapping sensitivity. The results show the improved flux expulsion with increase in heat treatment temperature and flux trapping sensitivity depends on the final surface preparation prior to the rf test.

Khanal, Bashu↗
DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2021

Enhancement of Nanostructured Ferritic Alloy 14YWT Properties via Heat Treatment for Post-Consolidation Processing

The nanostructured ferritic alloy 14YWT is a promising candidate for in-core use in generation IV nuclear reactors, due to a dense dispersion of insoluble, ultrafine-scale Y-Ti-O nano-oxides, which provide a high degree of irradiation tolerance and thermal stability. This work investigates the effects of heat treatment on the workability of 14YWT, along with the effect of processing history on abnormal grain structures and radial microstructural uniformity. In this study, a 14YWT rod consolidated at 850 °C was heat treated in argon at 1100 °C, 1150 °C, 1200 °C, or 1250 °C for 1 or 8 hours and changes in mechanical properties and microstructure were examined using microhardness and electron backscattered diffraction (EBSD). Two distinct types of large abnormal grains were observed, each with unique processing origins, including one with high and the other with low strain energy. Consolidation via direct extrusion resulted in radial microstructural gradients, where the center of the rod was softer with larger grain sizes and lower strain energies. These gradients persisted and intensified throughout heat treatment. Based upon this work, the recommended heat treatment for increased workability with minimal microstructural change is 1150 °C for 1 hours.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Temperature transformation of blended magnesium potassium phosphate cement binders

In this study, a multi-technique approach was utilised to determine the high temperature performance of magnesium potassium phosphate cement (MKPC) blended with fly ash (FA) or ground granulated blast furnace slag (GBFS) with respect to nuclear waste immobilisation applications. Conceptual fire conditions were employed (up to 1200 °C, 30 min) to simulate scenarios that could occur during interim storage, transportation or within a final geological disposal facility. After exposure up to 400 °C, the main crystalline phase, struvite-K (MgKPO{sub 4}·6H{sub 2}O), was dehydrated to poorly crystalline MgKPO{sub 4} (with corresponding volumetric and mass changes), with MgKPO{sub 4} recrystallisation achieved by 800 °C. XRD and SEM/EDX analysis revealed reaction occurred between the MgKPO{sub 4} and FA/GBFS components after exposure to 1000–1200 °C, with the formation of potassium aluminosilicate phases, leucite and kalsilite (KAlSi{sub 2}O{sub 6} and KAlSiO{sub 4}), commensurate with a reduced relative intensity (or complete elimination) of the dehydrated struvite-K phase, MgKPO{sub 4.} This was further supported by solid-state NMR ({sup 27}Al and {sup 29}Si MAS), where only residual features associated with the raw FA/GBFS components were observable at 1200 °C. The high temperature phase transformation of blended MKPC binders resulted in the development of a glass/ceramic matrix with all existing porosity infilled via sintering and the formation of a vitreous phase, whilst the physical integrity was retained (no cracking or spalling). This study demonstrates that, based on small-scaled specimens, blended MKPC binders should perform satisfactorily under fire performance parameters relevant to the operation of a geological disposal facility, up to at least 1200 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2020

MnBi-based magnets prepared from melt-spun alloys: Effect of $α → β$ phase transformation during field annealing

The temperature of the annealing treatment applied to the MnBi alloys with the intention to stabilize the α -MnBi “low-temperature” phase – a promising material for the rare-earth-free permanent magnets – is usually kept below the range of the β -Mn 1.08 Bi “high-temperature” phase. This work is focused on the investigation of the effects of partial and complete α → β phase transformation in bulk magnetic-field-annealed magnets on their structure and magnetic properties. MnBi alloys modified with In, Mg and Sb were melt-spun, compacted to their full density and then heated in a magnetic field of 30 kOe to temperatures sufficiently high for the beginning of the α → β transformation. A heating of 15 °C/min was used which was immediately followed by cooling at the rate of 7.5 °C/min; the degree of the phase transformation was measured by in situ monitoring of changes in the sample magnetization. In all the studied alloys, the α → β transformation was found to improve the [0 0 1] fiber texture induced by the applied magnetic field, although it simultaneously decreased the coercivity. A partial transformation has resulted in a 11% increase of the maximum energy product for the Mn 50 Bi 49 Sb 0.5 In 0.5 magnet, to 8.3 MGOe, and a 3% increase for the Mn 50 Bi 46 Mg 3 Sb 0.5 In 0.5 magnet, to 12.8 MGOe. In the latter alloy, the α → β and reverse transformations were found to initially occur in well-defined pockets leading to clusters of large, highly textured α crystallites. In the Mn 50 Bi 48.5 Sb 1.5 magnet, only part of the α phase could be recovered after the transformation, which instead promoted the paramagnetic MnBi 0.9 Sb 0.1 phase.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defect annihilation in heavy ion irradiated polycrystalline gold

In this study, we explore the interaction of electron wind force (EWF) with defects originating from ion irradiation in-situ inside a transmission electron microscope. Nanocrystalline gold specimens were self-ion irradiated to a dose of 5 × 10 15 ions/cm 2 (45 displacement per atom) to generate a high density of displacement damage. We also developed a molecular dynamics simulation model to understand the associated atomic scale mechanisms. Both experiments and simulations show that the EWF can impart significant defect mobility even at low temperatures, resulting in the migration and elimination of defects in a few minutes. Overall, we propose that the EWF interacts with defects to create highly glissile Shockley partial dislocations, which makes the fast and low temperature defect annihilation possible.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Irradiation-Driven Restructuring of UO 2 Thin Films: Amorphization and Crystallization

Combustion synthesis in uranyl nitrate–acetylacetone–2-methoxyethanol solutions was used to deposit thin UO 2 films on aluminum substrates to investigate the irradiation-induced restructuring processes. Thermal analysis revealed that the combustion reactions in these solutions are initiated at ~160 °C. The heat released during the process and the subsequent brief annealing at 400 °C allow the deposition of polycrystalline films with 5–10 nm UO 2 grains. The use of multiple deposition cycles enables tuning of the film thicknesses in the 35–260 nm range. Irradiation with Ar 2+ ions (1.7 MeV energy and a fluence of up to 1 × 10 17 ions/cm 2 ) is utilized to generate a uniform distribution of atomic displacements within the films. X-ray fluorescence (XRF) and alpha-particle emission spectroscopy showed that the films were stable under irradiation and did not undergo sputtering degradation. X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry and uranium ionic concentrations remain stable during irradiation. The high-resolution electron microscopy imaging and electron diffraction analysis demonstrated that at the early stages of irradiation (below 1 × 10 16 ion/cm 2 ) UO 2 films show complete amorphization and beam-induced densification (sintering), resulting in a pore-free disordered film. Prolonged irradiation (5 × 10 16 ion/cm 2 ) is shown to trigger a crystallization process at the surface of the films that moves toward the UO 2 /Al interface, converting the entire amorphous material into a highly crystalline film. This work reports on an entirely different radiation-induced restructuring of the nanoscale UO 2 compared to the coarse-grained counterpart. The preparation of thin UO 2 films deposited on Al substrates fills an area of national need within the stockpile stewardship program of the National Nuclear Security Administration and fundamental research with actinides. Here, the method reported in this work produces pure, robust, and uniform thin-film actinide targets for nuclear science measurements

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Cyclic deformation and lattice strain distribution of high Nb containing TiAl alloy

Low cycle fatigue of lamellar TiAl with 8.5 at.-%Nb was studied with a total strain amplitude of 0.28% at three temperatures: room temperature, 750°C and 900°C. At room temperature, the material exhibited cyclic hardening and the fracture mode was mainly interlamellar. At 750°C and 900°C, the material showed cyclic softening and the fracture mode was translamellar. The lattice strain in γ phase was almost tensile and larger tensile lattice strain in γ phase seems detrimental. Besides, the opposite direction of {201} γ and {100} α2 lead to crack propagation along α 2 /γ interfaces. B2/β o phase always suffered compressive lattice strain in the tests. Finally, the destruction of lamellar microstructure was the reason for colony refinement at 750°C and 900°C.

phase transformation↗
DOE OSTI2026

Why Seeding Works When Nucleation Barriers Vanish

This paper explains why seeds can speed up crystallization even when the formation of new crystal nuclei is not the slow step. In zeolite synthesis, local crystalline order can form relatively early, but the material may still appear poorly crystalline by X-ray diffraction because many small crystallites are misoriented and lack long-range coherence. Using coarse-grained molecular simulations, the study showed that seeds help solve this coherence problem. Rather than primarily lowering a nucleation barrier, seeds impose a common orientation on nearby growing crystallites, allowing them to merge into larger, better aligned domains. This accelerates the development of X-ray-detectable crystallinity even if the total amount of locally ordered material has not changed much. The work changes how induction times in zeolite synthesis should be interpreted: the delay before X-ray crystallinity appears can reflect the time needed to build long-range structural coherence, not simply the time needed to form crystalline material. This provides a new explanation for why seeding is effective in growth-limited crystallization and offers design principles for controlling crystallization rate and crystal quality.

36 MATERIALS SCIENCE↗