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NASA NTRS1993

Design and implementation of GaAs HBT circuits with ACME

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

Hutchings, Brad L.↗

NASA NTRS1992

Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

Offord, Bruce W.↗

NASA NTRS1993

SAW based systems for mobile communications satellites

Modern mobile communications satellites, such as INMARSAT 3, EMS, and ARTEMIS, use advanced onboard processing to make efficient use of the available L-band spectrum. In all of these cases, high performance surface acoustic wave (SAW) devices are used. SAW filters can provide high selectivity (100-200 kHz transition widths), combined with flat amplitude and linear phase characteristics; their simple construction and radiation hardness also makes them especially suitable for space applications. An overview of the architectures used in the above systems, describing the technologies employed, and the use of bandwidth switchable SAW filtering (BSSF) is given. The tradeoffs to be considered when specifying a SAW based system are analyzed, using both theoretical and experimental data. Empirical rules for estimating SAW filter performance are given. Achievable performance is illustrated using data from the INMARSAT 3 engineering model (EM) processors.

Peach, R. C.↗

NASA NTRS1992

A low-cost, CCD solid state star tracker

Applied Research Corporation (ARC) has developed an engineering model of a multi-star CCD-based tracker for space applications requiring radiation hardness, high reliability and low power consumption. The engineering unit compared favorably in functional performance tests to the standard NASA single-star tracker. Characteristics of the ARC star tracker are: field of view = 10 deg x 7.5 deg, sensitivity range of -1 to +5 star magnitude, NEA = 3 in x 3 in, linearity = 5 in x 5 in, and power consumption of 1-3 W (operating mode dependent). The software is upgradable through a remote link. The hardware-limited acquisition rate is 1-5 Hz for stars of +2 to +5 magnitude and 10-30 Hz for -1 to +2 magnitude stars. Mechanical and electrical interfaces are identical to the standard NASA star tracker.

Chmielowski, M.↗

NASA NTRS1994

Advanced Solar Cells for Satellite Power Systems

The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

Flood, Dennis J.↗

NASA NTRS1994

P/N InP solar cells on Ge wafers

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Wojtczuk, Steven↗

NASA NTRS1994

X-ray and gamma-ray emission of Sagittarius A* as a wind-accreting black hole

If, as many believe, Sgr A* is a massive black hole at the Galactic center, one should expect it to be a source of X-ray and gamma-ray activity, behaving basically as a scaled-down active galactic nucleus. An unavoidable source of accretion is the wind from IRS 16, a nearby group of hot, massive stars. Since the density and velocity of the accreting matter are known from observations, the accretion rate is basically a function of the putative black hole mass, M(sub h), only; this value represents a reliable lower limit to a real rate, given the other possible sources of accreting matter. Based on this and on the theories about shock acceleration in active galactic nuclei, we have estimated the expected production of relativistic particles and their hard radiation. These values turn out to be a function of M(sub h) as well. Comparing our results with available X-ray and gamma-ray observations which show Sgr A* to have a relatively low activity level, we conclude tentatively that the putative black hole in the Galactic center cannot have a mass greater than approximately 6 x 10(exp 3) solar mass. This conclusion is consistent with the upper limits to the black hole mass found by different methods earlier, although much more work is needed to make calculations of shock acceleration around black holes more reliable.

Mastichiadis, A.↗

NASA NTRS1995

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Dinetta, L. C.↗

NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗

NASA NTRS1998

The Physical Interpretation of X-Ray Phase Lags and Coherence: RXTE Observations of Cygnus X-1 as a Case Study

There have been a number of recent spectral models that have been successful in reproducing the observed X-ray spectra of galactic black hole candidates (GBHC). However, there still exists controversy over such issues as: what are the sources of hard radiation, what is the system's geometry, is the accretion efficient or inefficient, etc. A potentially powerful tool for distinguishing among these possibilities, made possible by the Rossi X-ray Timing Explorer (RXTE), is the variability data, especially the observed phase lags and variability coherence. These data, in conjunction with spectral modeling, have the potential of determining physical sizes of the system, as well as placing strong constraints on both Compton corona and advection models. As an example, we present RXTE variability data of Cygnus X-1.

Nowak, M. A.↗

NASA NTRS1999

Nano-Satellite Avionics

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Culver, Harry↗

NASA NTRS2000

Acousto-Optic Imaging Spectrometers for Mars Surface Science

NASA's long term plan for Mars sample collection and return requires a highly streamlined approach for spectrally characterizing a landing site, documenting the mineralogical make-up of the site and guiding the collections of samples which represent the diversity of the site. Ideally, image data should be acquired at hundreds of VIS and IR wavelengths, in order to separately distinguish numerous anticipated species, using principal component analysis and linear unmixing. Cameras with bore-sighted point spectrometers can acquire spectra of isolated scene elements, but it requires 10(exp 2) to 10(exp 2) successive motions and precise relative pointing knowledge in order to create a single data cube which qualifies as a spectral map. These and other competing science objectives have to be accomplished within very short lander/rover operational lifetime (a few sols). True, 2-D imaging spectroscopy greatly speeds up the data acquisition process, since the spectra of all pixels in the scene are collected at once. This task can be accomplished with cameras that use electronically tunable acousto-optic tunable filters (AOTFs) as the optical tuning element. AOTFs made from TeO2 are now a mature technology, and operate at wavelengths from near-UV to about 5 microns. Because of incremental improvements in the last few years, present generation devices are rugged, radiation-hard and operate at temperatures down to at least 150K so they can be safely integrated into the ambient temperature optics of in-situ instruments such as planetary or small-body landers. They have been used for ground-based astronomy, and were also baselined for the ST-4 Champollion IR comet lander experiment (CIRCLE), prior to cancellation of the ST-4 mission last year. AIMS (for Acousto-optic Imaging spectrometer), is a prototype lander instrument which is being built at GSFC with support by the NASA OSS Advanced Technologies and Mission Studies, Mars Instrument Definition and Development Program (MIDP). AIMS is capable of tunable spectroscopic imaging of surface mineralogy, ices and dust between 0.5 and 2.4 microns, at a resolving power (lambda/delta lambda) which is typically several hundred. The design spatial resolution, similar to IMP and SSI, will allow mapping at scales down to about 1 cm.

Glenar, D. A.↗

NASA NTRS2001

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Bell, L. D.↗

NASA NTRS2001

Nonvolatile Memory Solution for Near-Term NASA Missions

Nonvolatile memory (NVM) system that could reliably function in extreme environments is one of the most critical components for many spacecrafts being developed for NASA missions to be launched in next four to seven years. NVM supports the computer system in saving and updating critical state data required for a warm restart after power cycling or in case of a power bus failure. It also provides a power independent mass storage capacity for the scientific data gathered by the instruments. In some cases the window for gathering such data is very small and occurs only once in a given mission. Commercially popular and fully developed Flash NVM technology is inappropriate for many reasons such as the limited read write cycles with slower access speeds, radiation intolerance, higher Single Event Upsets (SEU) rates, etc. It is desirable to have an NVM system based upon a robust cell technology making it immune to the SEUs and with sufficient radiation hardness. Availability of such NVM system seems to be still 5 to 10 years in the future. Meanwhile, it is possible to provide an interim hybrid solution by combining the existing rad-hard technologies. Additional information is contained in the original extended abstract.

Patel, J. U.↗

NASA NTRS2001

Low Temperature Testing of a Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital (A/D) Converter

Power processing electronic systems, data acquiring probes, and signal conditioning circuits are required to operate reliably under harsh environments in many of NASA:s missions. The environment of the space mission as well as the operational requirements of some of the electronic systems, such as infrared-based satellite or telescopic observation stations where cryogenics are involved, dictate the utilization of electronics that can operate efficiently and reliably at low temperatures. In this work, radiation-hard CMOS 8-bit flash A/D converters were characterized in terms of voltage conversion and offset in the temperature range of +25 to -190 C. Static and dynamic supply currents, ladder resistance, and gain and offset errors were also obtained in the temperature range of +125 to -190 C. The effect of thermal cycling on these properties for a total of ten cycles between +80 and - 150 C was also determined. The experimental procedure along with the data obtained are reported and discussed in this paper.

Gerber, Scott S.↗

NASA NTRS2001

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗

NASA NTRS2002

Large Format Si:As IBC Array Performance for NGST and Future IR Space Telescope Applications

A mid-IR (5-30micrometer) instrument aboard a cryogenic space telescope can have an enormous impact in resolving key questions in astronomy and cosmology. A space platform's greatly reduced thermal backgrounds (compared to airborne or ground-based platforms), allow for more sensitive observations of dusty young galaxies at high redshifts, star formation of solar-type stars in the local universe, and formation and evolution of planetary disks and systems. The previous generation's largest, in sensitive IR detectors at these wavelengths are 256x256 pixel Si:As Impurity Band Conduction (IBC) devices built by Raytheon Infrared Operations (RIO) for the Space Infrared Telescope Facility/Infrared Array Camera (SIRTF)/(IRAC) instrument. RIO has successfully enhanced these devices, increasing the pixel count by a factor of 16 while matching or exceeding SIRTF/IRAC device performance. NASA-ARC in collaboration with RIO has tested the first high performance large format (1024x 1024) Si:As IBC arrays for low background applications, such as for the middle instrument on Next Generation Space Telescope (NGST) and future IR Explorer missions. These hybrid devices consist of radiation hard SIRTF/IRAC-type Si:As IBC material mated to a readout multiplexer that has been specially processed for operation at low cryogenic temperatures (below 10K), yielding high device sensitivity over a wavelength range of 5-28 micrometers. We present laboratory testing results from these benchmark, devices. Continued development in this technology is essential for conducting large-area surveys of the local and early universe through observation and for complementing future missions such as NGST, Terrestrial Planet Finder (TPF), and Focal Plane Instruments and Requirement Science Team (FIRST).

Ennico, Kimberly↗

NASA NTRS2003

Thin-film Solar Cells for Space Applications

The proposed work supports MURED goals by fostering research and development activities at Fisk and UTEP which contribute substantially to NASA's mission, preparing faculty and students at Fisk and UTEP to successfully participate in the conventional, competitive research and education process, and increasing the number of students to successfully complete degrees in NASA related fields. The project also addresses directly a core need of NASA for space power and is consistent with the Core Responsibilities of the John Glenn Space Center. Current orbital missions are limited by radiation from high energy particles trapped in the Van Allen Belt because that solar radiation degrades cell performance by damaging the crystalline lattice. Some potential orbits have been inaccessible because the radiation is too severe. Thin-film solar cells, if they can be adapted for use in the unfriendly space environment, could open new orbits to satellites by providing a radiation hard source of power. The manned mission to Mars requires photovoltaic devices for both the trip there and as a power supply on the surface. Solar arrays using thin films offer a low power/weight ratio solution that provides reliable photovoltaic power.

Lush, Gregory B.↗