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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Brown, E. R.↗
NASA NTRS1987

Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers

The performance characteristics of InGaAs/GaAs strained-layer superlattice coplanar ridge-type directional couplers realized by molecular beam epitaxy are reported. The measured power transfer characteristics with 1.15 micron incident photoexcitation demonstrate nonlinear coupling due to absorption associated with the tails of the excitonic resonances in the quantum wells. From a theoretical fit of the measured data, the nonlinear refractive index coefficient, n2, of the multiquantum well is found to be 2.25 x 10 to the -7th sq cm/W. This agrees very well with a value of n2 = 1.9 x 10 to the-7th sq cm/W obtained independently on the same material from interferometric measurents.

Das, Utpal↗
NASA NTRS1988

Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

Larsson, Anders↗
NASA NTRS1989

Strain-Layer-Superlattice Light Modulator

Conceptual device combines resonant reflection and photovoltaic action to enable one light beam to impose spatial and temporal modulation on another light beam. Such spatial light modulator, with high speed and multiplicity of parallel signal channels, used in image processing or similar computation requiring high data-throughput rates. Microstructures of GaAs and InAs with multiple quantum wells and compositional superlattices grown by molecular-beam epitaxy. Enhanced electro-optical properties of arrangement of alternating layers enables writing light beam to modulate reading light beam.

Maserjian, Joseph↗
NASA NTRS1989

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗
NASA NTRS1988

Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Monolithic two-dimensional arrays of GaAs/AlGaAs diode lasers with light emission normal to the surface have been obtained by fabricating edge-emitting quantum-well lasers coupled with external mirrors that deflect the radiation from the laser facets by 90 degrees. Linear arrays of GaAs/AlGaAs devices in which one of the laser facets was cleaved while the other facet and an adjacent 45 degree deflector were formed by ion-beam-assisted etching (IBAE) have been reported. For the arrays reported in this section, IBAE was used to form all of the laser facets and the deflecting mirrors. A mass transport process of the type employed to fabricate two-dimensional arrays of GaInAsP/InP lasers coupled with deflecting mirrors is not known for AlGaAs.

Source record↗
NASA NTRS1988

Sensor technology

The objective is to provide necessary expertise and technology to advance space remote sensing of terrestrial, planetary, and galactic phenomena through the use of electromagnetic and electro-optic properties of gas, liquid, and solid state materials technology. The Sensor Technology Program is divided into two subprograms: a base research and development part and a Civil Space Technology Initiative (CSTI) part. The base research and development consists of research on artificially grown materials such as quantum well and superlattice structure with the potential for new and efficient means for detecting electromagnetic phenomena. Research is also being done on materials and concepts for detector components and devices for measuring high energy phenomena such as UV, X-, and gamma rays that are required observables in astrophysis and solar physics missions. The CSTI program is more mission driven and is balanced among four major disciplines: detector sensors; submillimeter wave sensors; LIDAR/DIAL sensors; and cooler technology.

Sokoloski, Martin M.↗
NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗
NASA NTRS1988

Extended fine structures in the electron energy loss spectrum of InAs

The possibility of using electron energy loss fine structure (EELFS) for the characterization of thin pseudomorphic quantum wells of InAs and GaAs(100) is investigated. It is shown that the EELFS technique can yield reliable radial distribution functions for bulk InAs, provided beam-induced sample degradation is controlled stringently. Additional improvements in the data collection procedures, including better control of the sample condition, are required as well as more detailed work on separating contributions from multiple edges in the data analysis.

Schowengerdt, F. D.↗
NASA NTRS1989

Experimental results of a high Q quasioptical reflection cavity

A quasi-optical reflection cavity intended to be used as the resonant load of a submillimeter wavelength oscillator has been designed, constructed, and tested. The resonator consists of three elements in cascade: a high Q, high finesse folded Fabry-Perot resonator, a lower Q, low finesse Fabry-Perot resonator, and a Littrow mounted diffraction grating. The resonator exhibits a Q of 6600 and 2.5 dB of loss at 63 GHz. The design can be scaled to 1 THz, where waveguide structures become impractical, to serve as the resonator for high frequency quantum well resonant tunneling device oscillators.

Lee, Karen A.↗
NASA NTRS1989

Laser applications in meteorology and earth and atmospheric remote sensing; Proceedings of the Meeting, Los Angeles, CA, Jan. 16-18, 1989

Various papers on laser applications in meteorology and earth and atmospheric remote sensing are presented. The individual topics addressed include: solid state lasers for the mid-IR region, tunable chromium lasers, GaInAsSb/AlGaAsSb injection lasers for remote sensing applications, development and design of an airborne autonomous wavemeter for laser tuning, fabrication of lightweight Si/SiC lidar mirrors, low-cost double heterostructure and quantum-well laser array development, nonlinear optical processes for the mid-IR region, simulated space-based Doppler lidar performance in regions of backscatter inhomogeneities, design of CO2 recombination catalysts for closed-cycle CO2 lasers, density measurements with combined Raman-Rayleigh lidar, geodynamics applications of spaceborne laser ranging, use of aircraft laser ranging data for forest mensuration, remote active spectrometer, multiwavelngth and triple CO2 lidars for trace gas detection, analysis of laser diagnostics in plumes, laser atmospheric wind sounder, compact Doppler lidar system using commercial off-the-shelf components, and preliminary design for a laser atmospheric wind sounder.

Sokoloski, Martin M.↗
NASA NTRS1990

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Efron, Uzi↗
NASA NTRS1990

Long-wavelength infrared detection in a Kastalsky-type superlattice structure

The first successful demonstration of long-wavelength infrared (LWIR) detection with a Kastalsky-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10 microns in very good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. The response at 83 K is about 50 percent of the response at 24 K.

Byungsung, O.↗
NASA NTRS1990

LWIR detector requirements for low-background space applications

Detection of cold bodies (200 to 300 K) against space backgrounds has many important applications, both military and non-military. The detector performance and design characteristics required to support low-background applications are discussed, with particular emphasis on those characteristics required for space surveillance. The status of existing detector technologies under active development for these applications is also discussed. In order to play a role in future systems, new, potentially competing detector technologies such as multiple quantum well detectors must not only meet system-derived requirements, but also offer distinct performance or other advantages over these incumbent technologies.

Deluccia, Frank J.↗
NASA NTRS1990

LWIR detector research in InAsSb/InAs

The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.

Peercy, Paul S.↗
NASA NTRS1990

Linear laser diode arrays for improvement in optical disk recording

The development of individually addressable laser diode arrays for multitrack magneto-optic recorders for space stations is discussed. Three multi-element channeled substrate planar (CSP) arrays with output power greater than 30 mW with linear light vs current characteristics and stable single mode spectra were delivered to NASA. These devices have been used to demonstrate for the first time the simultaneous recording of eight data tracks on a 14-inch magneto-optic erasable disk. The yield of these devices is low, mainly due to non-uniformities inherent to the LPE growth that was used to fabricate them. The authors have recently developed the inverted CSP, based on the much more uniform MOCVD growth techniques, and have made low threshold quantum well arrays requiring about three times less current than the CSP to deliver 30 mW CW in a single spatial mode. The inverted CSP is very promising for use in space flight recorder applications.

Alphonse, G. A.↗
NASA NTRS1991

A field induced guide-antiguide modulator of GaAs-AlGaAs

A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.

Huang, T. C.↗
NASA NTRS1991

Lateral modes of broad area semiconductor lasers - Theory and experiment

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Lang, Robert J.↗