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At least 361 records · Page 20

Magnetoelastic-coupling-assisted first-order antiferromagnetic transitions in the corrugated honeycomb-lattice compounds (Ca, Sr) ⁢Mn 2 ⁢ P 2

Understanding the origin of unconventional magnetic order is a central theme in the research field of functional quantum materials for spin-dependent applications. In general, a paramagnetic (PM) to antiferromagnetic (AFM) transition is of thermodynamically second order in nature in the absence of a magnetic field. In the magnetically frustrated corrugated-honeycomb lattice compounds (Ca, Sr) ⁢Mn 2 ⁢ P 2 , electrical resistivity 𝜌 measurements in the 𝑎⁢𝑏 plane are reported to exhibit sharp discontinuities at the respective PM to AFM ordering temperatures 𝑇 N = 69.5 and 53 K, respectively, signifying the unusual first-order nature of the AFM transition. To reveal the origin of such anomalous transitions, high-resolution linear thermal-expansion measurements are reported for both CaMn 2 ⁢P 2 and SrMn 2 ⁢ P 2 in the 𝑎⁢𝑏 plane and along the 𝑐 axis using capacitance dilatometry. The thermal expansion measurements show a sharp discontinuity in Δ⁢𝐿/𝐿 at 𝑇 N , yielding a diverging behavior in the thermal expansion coefficient 𝛼⁡(𝑇) associated with strong magnetoelastic coupling, driving the first-order AFM transition in CaMn 2 ⁢P 2 . However, this effect is weaker in SrMn 2 ⁢P 2 , consistent with the magnetic entropy changes 𝑆⁡(𝑇) obtained from the heat-capacity measurements. Temperature-dependent 𝑎⁢𝑏-plane x-ray diffraction measurements for CaMn 2 ⁢ P 2 near its 𝑇 N yield a volume thermal expansion coefficient consistent with literature data for other materials. The uniaxial pressure derivatives of 𝑇 N in the two compounds are found to be respectively opposite in sign, presumably due to the different magnetic structures.

Pakhira, Santanu [Maulana Azad National Institute ↗

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Layer-transferred MoS{sub 2}/GaN PN diodes

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS{sub 2}/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS{sub 2} grown by chemical vapor deposition on sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS{sub 2} films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of 0.23 eV for the transferred MoS{sub 2}/GaN heterojunction. This conduction band offset was confirmed by internal photoemission measurements. The energy band lineup of the MoS{sub 2}/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Resonance tuning due to Coulomb interaction in strong near-field coupled metamaterials

Coulomb's law is one of the most fundamental laws of physics that describes the electrostatic interaction between two like or unlike point charges. Here, we experimentally observe a strong effect of Coulomb interaction in tightly coupled terahertz metamaterials where the split-ring resonator dimers in a unit cell are coupled through their near fields across the capacitive split gaps. Using a simple analytical model, we evaluated the Coulomb parameter that switched its sign from negative to positive values indicating the transition in the nature of Coulomb force from being repulsive to attractive depending upon the near field coupling between the split ring resonators. Apart from showing interesting effects in the strong coupling regime between meta-atoms, Coulomb interaction also allows an additional degree of freedom to achieve frequency tunable dynamic metamaterials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrostatic interaction of macroparticles in a plasma in the strong screening regime

We have studied the electrostatic interaction of spherical particles in an equilibrium plasma or an electrolyte in the moderate and strong screening regimes when the macroparticle size is comparable with or much larger than the Debye screening radius. We have developed an approximate theory of the electrostatic interaction of macroparticles in the case of constant potentials of their surfaces in the weak or moderate screening regimes. In this theory, the charges of macroparticles with a fixed spacing between them are determined using vacuum capacitive coefficients, which are corrected taking into account the plasma screening effects. The force of interaction with the resultant charges is calculated based on the solution of the problem of interaction in a homogeneous dielectric (vacuum) and is multiplied by the plasma factor. We have also obtained an approximate solution to the problem in the strong screening regime. Comparison with the exact solution has demonstrated high accuracy of the proposed methods of calculation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Metastable defect response in CZTSSe from admittance spectroscopy

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se) 4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Equation of state and thermodynamic Gruneisen parameter of monoclinic 1,1-diamino-2,2-dinitroethylene

In situ synchrotron x-ray diffraction experiments were conducted on 1,1-diamino-2,2 dinitroethylene (FOX-7) at pressures up to 6.8 GPa and temperatures up to 485 K. Within th resolution of the present diffraction data, our results do not reveal evidence for a pressureinduce structural phase transition near 2 GPa, previously observed in several vibrationa spectroscopy experiments. Based on unit-cell volume measurements, the least-squares fi using the third-order Birch–Murnaghan equation of state (EOS) yields K 0 = 12.6 ± 1.4 GP and K 0 = 11.3 ± 2.1 for the α-phase of FOX-7, which are in good agreement with recentl reported values for the deuterated sample, indicating that the effect of hydrogen–deuteriu substitution on the compressibility of FOX-7 is negligibly small. A thermal EOS is als obtained for the α-phase of FOX-7, including pressure dependence of thermal expansivity (∂α/∂P) T = -7.0 ± 2.0 × 10 -5 K -1 GPa -1 , and temperature derivative of the bulk modulus (∂K T /∂T) P = -1.1 × 10 -2 GPa K -1 . From these EOS parameters, we calculate heat capacit at constant volume (C V ) and thermodynamic Grüneisen parameter (γ TH ) as a function o temperature. At ambient conditions, the calculated γTH is 1.055, which is in good agreemen with the value (1.09) previously obtained from density functional theory (DFT). The obtaine C V, however, is 13% larger than that calculated from the first-principles calculations indicating that the dispersion correction in the DFT calculations may need to be furthe improved for describing intermolecular interactions of molecular crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct nano-patterning of graphene with helium ion beams

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO{sub 2}/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He{sup +}). Doses of 2.0 × 10{sup 16 }He{sup + }cm{sup −2} from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He{sup +} in a non-monotonic fashion. Increasing the dose from 2.0 × 10{sup 16} to 5.0 × 10{sup 16 }He{sup + }cm{sup −2} improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10{sup 17 }He{sup + }cm{sup −2} degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Frequency division using a micromechanical resonance cascade

A coupled micromechanical resonator array demonstrates a mechanical realization of multi-stage frequency division. The mechanical structure consists of a set of N sequentially perpendicular microbeams that are connected by relatively weak elastic elements such that the system vibration modes are localized to individual microbeams and have natural frequencies with ratios close to 1:2:⋯:2{sup N}. Conservative (passive) nonlinear inter-modal coupling provides the required energy transfer between modes and is achieved by finite deformation kinematics. When the highest frequency beam is excited, this arrangement promotes a cascade of subharmonic resonances that achieve frequency division of 2{sup j} at microbeam j for j = 1, …, N. Results are shown for a capacitively driven three-stage divider in which an input signal of 824 kHz is passively divided through three modal stages, producing signals at 412 kHz, 206 kHz, and 103 kHz. The system modes are characterized and used to delineate the range of AC input voltages and frequencies over which the cascade occurs. This narrow band frequency divider has simple design rules that are scalable to higher frequencies and can be extended to a larger number of modal stages.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Laser-Induced Phase Transition in a Monolayer of Polymer Particles Levitating in a Low-Pressure Gas-Discharge Plasma

We report on the results of analysis of the mean kinetic energy and the pair correlation function of polymer particles in a plasma–dust structure under the action of laser radiation. We have observed experimentally the crystal–liquid phase transition in the monolayer of particles levitating in the near-electrode layer of a capacitive high-frequency discharge. The coupling parameter of the dust system has been estimated. The results of analysis of the modification of the polymer dust particle surface after holding in the plasma are considered. We propose an explanation of the phase transition taking into account the role of the photophoretic force in the motion of macroparticles. The effect of the photophoretic force is associated with the modification of the dust particle surface in the plasma, as a result of which the particles can effectively absorb laser radiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature

Characteristics of a capacitive infrared photodetector that works at room temperature by registering a change in capacitance upon illumination are reported. If used in an ideal resonant inductor-resistor-capacitor circuit, it can exhibit zero dark current, zero standby power dissipation, infinite detectivity, and infinite light-to-dark contrast ratio. It is also made frequency-selective by employing semiconductor nanowires that selectively absorb photons of energies close to the nanowire's bandgap. Based on measured parameters, the normalized detectivity is estimated to be ∼3 × 10{sup 7} Jones for 1.6 μm IR wavelength at room temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Imaging electron motion in graphene

A cooled scanning probe microscope (SPM) is an ideal tool to image electronic motion in graphene: the SPM tip acts as a scanning gate, which interacts with the electron gas below. We introduce the technique using our group's previous work on imaging electron flow from a quantum point contact in a GaAs 2DEG and tuning an InAs quantum dot in an InAs/InP nanowire. Carriers in graphene have very different characteristics: electrons and holes travel at a constant speed with no bandgap, and they pass through potential barriers via Klein tunneling. In this paper, we review the extension of SPM imaging techniques to graphene. We image the cyclotron orbits passing between two narrow contacts in a single-atomic-layer graphene device in a perpendicular magnetic field. Magnetic focusing produces a peak in transmission between the contacts when the cyclotron diameter is equal to the contact spacing. The charged SPM tip deflects electrons passing from one contact to the other, changing the transmission when it interrupts the flow. By displaying the change in transmission as the tip is raster scanned above the sample, an image of flow is obtained. In addition, we have developed a complementary technique to image electronic charge using a cooled scanning capacitance microscope (SCM) that uses a sensitive charge preamplifier near the SPM tip to achieve a charge noise level 0.13 e Hz -1/2 with high spatial resolution 100 nm. The cooled SPM and SCM can be used to probe the motion of electrons on the nanoscale in graphene devices.

36 MATERIALS SCIENCE↗

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ionic charging by local imbalance at interfaces in hybrid lead halide perovskites

Identification of specific operating mechanisms becomes particularly challenging when mixed ionic-electronic conductors are used in optoelectronic devices. Ionic effects in perovskite solar cells are believed to distort operation curves and possess serious doubts about their long term stability. Current hysteresis and switchable photovoltaic characteristics have been connected to the kinetics of ion migration. However, the nature of the specific ionic mechanism (or mechanisms) able to explain the operation distortions is still poorly understood. It is observed here that the local rearrangement of ions at the electrode interfaces gives rise to commonly observed capacitive effects. Charging transients in response to step voltage stimuli using thick CH{sub 3}NH{sub 3}PbI{sub 3} samples show two main polarization processes and reveal the structure of the ionic double-layer at the interface with the non-reacting contacts. It is observed that ionic charging, with a typical response time of 10 s, is a local effect confined in the vicinity of the electrode, which entails absence of net mobile ionic concentration (space-charge) in the material bulk.

36 MATERIALS SCIENCE↗

Demonstration of distributed capacitance compensation in a metal-insulator-metal infrared rectenna incorporating a traveling-wave diode

We experimentally demonstrate that the transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time-constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We fabricated low resistance (380 Ω ) and moderate responsivity (0.46 A/W) metal-insulator-metal traveling-wave diodes. When a rectenna incorporating the traveling-wave diode was illuminated with 10.6 μ m radiation, it produced a peak system responsivity of 130 μ A/W and a detectivity of 1.0 × 10 4 Jones. These results agree with the simulated device performance and exceed the response of an equivalent lumped-element metal-insulator-metal rectenna.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-Q lattice mode matched structural resonances in terahertz metasurfaces

The quality (Q) factor of metamaterial resonances is limited by the radiative and non-radiative losses. At terahertz frequencies, the dominant loss channel is radiative in nature since the non-radiative losses are low due to high conductivity of metals. Radiative losses could be suppressed by engineering the meta-atom structure. However, such suppression usually occurs at the fundamental resonance mode which is typically a closed mode resonance such as an inductive-capacitive resonance or a Fano resonance. Here, we report an order of magnitude enhancement in Q factor of all the structural eigenresonances of a split-ring resonator fueled by the lattice mode matching. We match the fundamental order diffractive mode to each of the odd and even eigenresonances, thus leading to a tremendous line-narrowing of all the resonances. Such precise tailoring and control of the structural resonances in a metasurface lattice could have potential applications in low-loss devices, sensing, and design of high-Q metamaterial cavities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing the band alignment in rectifying SrIrO 3 /Nb:SrTiO 3 heterostructures

Here, we have examined the band alignment in SrIrO 3 /Nb:SrTiO 3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

Zhao, Zhibo↗