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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay

A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Spencer, Michael G.↗
NASA NTRS1995

Polyimides That Contain Cyclobutene-3,4-Dione Moieties

Linear aromatic polyimides containing cyclobutene-3,4,-dione moieties synthesized in experiments. Polymers exhibit high thermal and thermo-oxidative stabilities, making them useful in structural components exposed to hot and/or oxidative environments, as in jet engines and on outer surfaces of supersonic aircraft. Electrons in cyclobutene-3,4-dione moieties readily excited to states of higher energy upon exposure to ultraviolet light, giving rise to electronic properties with potential utility in photovoltaic, photoconductive, and/or photoemissive devices.

St. Clair, Terry L.↗
NASA NTRS1995

Photoelectrochemical etching of silicon carbide (SiC) and its characterization

Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

Collins, D. M.↗
NASA NTRS1995

FIFI: The MPE Garching/UC Berkeley Far-Infrared Imaging Fabry-Perot Interferometer

We describe the performance characteristics of the MPE Garching/UC Berkeley Far-Infrared Imaging Fabry-Perot Interferometer (FIFI) for the Kuiper Airborne Observatory (KAO). The spectrometer features two or three cryogenic tunable Fabry-Perot filters in series giving spectral resolution R of up to 10(exp 5) in the range of 40 microns less than lambda less than 200 microns, and an imaging 5x5 array of photoconductive detectors with variable focal plane plate scale. The instrument works at background limited sensitivity of up to 2 x 10(exp -19) W cm(exp -2) Hz(exp -1/2) per pixel per resolution element at R = 10(exp 5) on the KAO.

Geis, Norbert↗
NASA NTRS1994

Native Defect Related Optical Properties of ZnGeP2

We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 Crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states.

Dietz, N.↗
NASA NTRS1996

Extrinsic germanium photoconductors for far-IR astronomy: Research results and works in progress

Some Ge:Ga and Ge:Sb photoconductor materials and detectors that are currently under development are reported. The best Ge:Ga devices exhibit dark currents of lower than 200 electrons/s, with a concurrent responsivity of 2 A/W and a detective quantum efficiency (DQE) of 5 percent. For higher backgrounds, an operating temperature of 3 K can be used. This increases the DQE to 7 percent and the responsivity to 4.5 A/W. Investigations were initiated into n-type Ge:Sb as an alternative photoconductive material. Two crystals of Ge:Sb were grown and a number of test detectors were fabricated and evaluated. At 2 K, the best device produced dark currents of less than 100 electrons/s with concurrent responsivity of 1 A/W and DQE of 4 percent, and at 3 K, produced currents of 10(exp 5) electrons/s with a DQE of 7 percent and a responsivity of 4 A/W. Using p-type Ge:Ga crystals, two dimensional monolithic photoconductor arrays are being constructed. Future work will focus on measuring pixel-to-pixel homogeneity, cross talk issues, overall sensitivity and suitability for photometric instruments.

Beeman, J. W.↗
NASA NTRS2000

Optical Characterization of Bulk ZnSeTe Solid Solutions

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Su, Ching-Hua↗
NASA NTRS2001

AIRS-Light Instrument Concept and Critical Technology Development

Understanding Earth's climate, atmospheric transport mechanisms, and the hydrologic cycle requires a precise knowledge of global atmospheric circulation, temperature profiles, and water vapor distribution. The accuracy of advanced sounders such as AIRS/AMSU/HSB on NASA's Aqua spacecraft can match radiosonde accuracy. It is essential to fold those capabilities fully into the NPOESS, enabling soundings of radiosonde accuracy, every 6 hours around the globe on an operational basis. However, the size, mass, power demands, and thermal characteristics of the Aqua sounding instrument suite cannot be accommodated on the NPOESS spacecraft. AIRS-Light is an instrument concept, developed under the Instrument Incubator Program, which provides IR sounding performance identical to the AIRS instrument, but uses advances in HgCdTe FPA technology and pulse tube cooler technology, as well as design changes to dramatically reduce the size, mass, and power demand, allowing AIRS-Light to meet all NPOESS spacecraft interface requirements. The instrument concept includes substantial re-use of AIRS component designs, including the complex AIRS FPA, to reduce development risk and cost. The AIRS-Light Instrument Incubator program fostered the development of photovoltaic-mode HgCdTe detector array technology for the 13.5-15.4 micron band covered by photoconductive-mode HgCdTe arrays in AIRS, achieved state of the art results in this band, and substantially reduced the development risk for this last new technology needed for AIRS-Light implementation, A demonstration of a prototype 14.5-15.4 micron band IRFPA in a reduced heat-load dewar together with the IMAS pulse tube cryocooler is in progress.

Maschhoff, Kevin↗
NASA NTRS1996

4482 Element Multispectral Hybrid PV/PC HgCdTe IRFPA for High Resolution Coverage of 3.7 - 15.4 Micrometers for the AIRS Instrument

The Atmospheric Infrared Sounder (AIRS) is a key facility instrument in the NASA Earth Observing System (EOS) program, being implemented to obtain comprehensive long-term measurements of earth processes affecting global change. The instrument performs passive IR remote sensing using a high resolution grating spectrometer with a wide spectral coverage (3.7 - 15.4 m) directing radiation onto a hybrid HgCdTe IRFPA operating at 58K in a vacuum package cooled to 155K. The hybrid HgCdTe FPA consists of twelve modules, 10 with multiplexed photovoltaic detectors and two with individually leaded out photoconductive detectors. The complex FPA has a large optical footprint, 53 mm x 66 mm, and receives energy dispersed from the grating through a precision filter assembly containing 17 narrow band filters. The backside illuminated PV detector arrays are fabricated from P-on-n double layer LPE grown heterojunction detectors in a bilinear format of 50 m x 100 m detectors, with from 232 to 420 detectors per module. For the MWIR bands four PV modules cover the 3.7 m to 8.22 m region. Low detector capacitance and low noise preamplifiers in the ROIC are key to achieving high sensitivities in these bands. Uniform quantum efficiencies and detectivities exceeding 3E13 cm-rtHz/W have been achieved. The LWIR region is covered by six PV modules spanning 8.8 m to 13.75 m. High detector resistance and very low ROIC preamplifier input noise are key to achieving high sensitivity. A detectivity exceeding 2E11 cm-rtHz/W has been achieved at the longest wavelength. Two additional PC modules cover the longest spectral bands out to 15.4 m. This high performance multispectral focal plane has been built and integrated with the dewar assembly, and is currently being integrated with the complete AIRS sensor.

Rutter, James↗
NASA NTRS2003

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗
NASA NTRS2004

Arrays of High Performance Thermal Detectors

Thermal detectors have historically been the sensors of choice for applications where photoconductive or photovoltaic detectors are unavailable. While they have the advantage of broad wavelength coverage, a primary disadvantage has been sensitivity; at a given operating temperature, bolometers are typically much less sensitive than photodetectors. The development of cryogenic bolometers has resulted in thermal detectors which can reach fundamental sensitivity limits. When operated at temperatures below 0.3 K these devices can provide background-limited sensitivity for cryogenic imaging and spectroscopy in space. The past decade has seen a rapid growth in sensitivity and array format in cryogenic bolometers. Micromachining technology, combined with advances in superconducting electronics, provides a strong technological base for future developments. I will describe the present state of development of low-temperature thermal detectors, and the possible extension of this technology to higher temperature operation.

Moseley, Harvey↗
NASA NTRS2005

Wide Operational Range Thermal Sensor

Bolometer system and method for detecting, at BLIP levels, presence of radiation over a broad range of wavelengths in an infrared spectrum and in a temperature range from 20 K to as high as room temperature. The radiation is received by a Si crystal having a region that is doped with one or more of In, Ga, S, Se, Te, B, Al, P, As and Sb in a concentration ratio in a range such as 5 x 10(exp -11) to 5 x 10(exp -6). Change in electrical resistance delta R due to receipt of the radiation is measured through a change in voltage difference or current within the crystal, and the quantity delta R is converted to an estimate of the amount of radiation received. Optionally, incident radiation having an energy high enough to promote photoconductivity is removed before detection.

John H Goebel↗
NASA NTRS1995

15m 128x128 Quantum Well Infrared Photodetector Focal Plane Array Camera

We have developed a first generation 15 GaAs/AlGaAs 128x128 quantum well infrared photodetectors (QWIPSs) focal plane array (FPA) for a staring infrared (IR) sensor system. The photoconductive QWIPs of the 128x128 FPAs were then fabricated by wet chemical etching through the photosensitive GaAs/AlGaAs multi quantum well layers into the 1 thick doped GaAs contact layer. The pitch of the FPA is 50 m and the actual pixel size is 38x38m2.

Infrared Photodetector↗
NASA NTRS2006

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

infrared imaging↗
NASA NTRS2003

High Resistivity Transparent/Conductive Coatings for Space Applications: Problems and Possible Improvements

We have prepared transparent films with a sheet relativity of 10(exp 1) to 10(exp 12) ohm/square by co-depositing a transparent conducting oxide (TCO) with magnesium fluoride, using two independently controlled RF magnetron sputter guns to facilitate adjustment of the film composition, Co-deposited indium tin oxide (ITO) and MgF2 on quartz and flexible polymeric substrate exhibited reasonably stable sheet resistivity over several months' time, with substantially lower optical reflectance than that of pure ITO. However, exposure to low-intensity blue light reduces sheet resistivity by as much as two orders of magnitude. Our results suggest this photoconductivity effect may be present in all InO(x)-based materials. We find that sheet resistivity can by "tuned" by admitting a small amount of high-purity air during deposition offering the possibility of closed loop process control.

Cashman, Thomas↗
NASA NTRS2001

Slightly Conductive Transparent Films for Space Applications: Manufacturability and Durability

Highly transparent, slightly conductive films of co-deposited indium tin oxide (ITO) and MgF, have possible applications for environmental protection of exterior surfaces of spacecraft. Reliable preparation of films with the desired sheet resistivity (approximately 10(exp 8) ohms/square) is difficult because the electrical properties of ITO-Mg F, are highly dependent on film composition. We have investigated the use of plasma emission monitoring to improve the reproducibility of films prepared by RF magnetron sputtering. While considerable improve ment was observed, it appears that some in-situ electrical or optica l characterization will be needed for reliable production coating wit h ITO-MgF,. We have also done further evaluation of a possibly undesi rable photoconductive effect previously observed in these films.

Uppala, N.↗
NASA NTRS2001

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

DiMeo, Jr., Frank↗
NASA NTRS1989

Method for generation of tunable far infrared radiation from two-dimensional plasmons

Tunable far infrared radiation is produced from two-dimensional plasmons in a heterostructure, which provides large inversion-layer electron densities at the heterointerface, without the need for a metallic grating to couple out the radiation. Instead, a light interference pattern is produced on the planar surface of the heterostructure using two coherent laser beams of a wavelength selected to be strongly absorbed by the heterostructure in order to penetrate through the inversion layer. The wavelength of the far infrared radiation coupled out can then be readily tuned by varying the angle between the coherent beams, or varying the wavelength of the two interfering coherent beams, thus varying the periodicity of the photoconductivity grating to vary the wavelength of the far infrared radiation being coupled out.

Katz, Joseph↗