Measurements of the Inert Hugoniot & Mechanical Ignition Threshold in Ni+Al Reactive Multilayers via X-Ray Diffraction
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Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.
At millimeter wavelengths, attenuation by hydrometeors, such as liquid droplets or large snowflakes, is generally not negligible. When using multifrequency ground-based radar measurements, it is common practice to use the Rayleigh targets at cloud top as a reference in order to derive attenuation-corrected reflectivities and meaningful dual-frequency ratios (DFRs). By capitalizing on this idea, this study describes a new quality-controlled approach that aims at identifying regions of cloud where particle growth is negligible. The core of the method is the identification of a “Rayleigh plateau”, i.e., a large enough region near cloud top where the vertical gradient of DFR remains small. By analyzing co-located Ka–W band radar and microwave radiometer (MWR) observations taken at two European sites under various meteorological conditions, it is shown how the resulting estimates of differential path-integrated attenuation (ΔPIA) can be used to characterize hydrometeor properties. When the ΔPIA is predominantly produced by cloud liquid droplets, this technique alone can provide accurate estimates of the liquid water path. When combined with MWR observations, this methodology paves the way towards profiling the cloud liquid water, quality-flagging the MWR retrieval for rain and drizzle contamination, and/or estimating the snow differential attenuation.
The various technologies presented herein relate to formation of carbon micromechanical systems (CMEMS), wherein the CMEMS comprise multiple layers of carbon structures and are formed using a plurality of photoresist precursors that are processed to form carbon. The various embodiments can be utilized in producing a plurality of CMEMS with full production level fabrication, e.g., 6 inch wafers can be processed. A pyrolyzed layer of carbon is lithographically defined after pyrolysis, wherein the post-pyrolysis etch process can produce carbon structures having repeatable and accurate device geometries, with straight sidewalls. A sacrificial layer can be applied to facilitate separation of a first carbon layer from a second carbon layer, wherein, upon pyrolysis to form the second carbon layer and lithography thereof, the sacrificial layer is removed to form a CMEMS comprising a first carbon layer (e.g., comprising bottom contacts) located beneath a second carbon layer (e.g., a mechanical layer).
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The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.
A newsletter article to appear in the FY 2022 Q1 issue of the LDRD Quarterly Highlights, https://www.lanl.gov/projects/ldrd-tri-lab/quarterly-highlights.php.