Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “memory effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Li, Yue↗
DOE OSTI2018

Endogenous amyloid-β mediates memory forgetting in the normal brain

Highlights: • Injection of anti-Aβ antibody into the ventricles prolonged object recognition memory. • It was also effective when injected after memory consolidation. • Genetic deletion of FcγRIIb, an Aβ receptor, prolonged object recognition memory. Amyloid beta (Aβ) is known to be one of the strong candidate molecules for initiating Alzheimer's disease and has been extensively studied in the light of disease pathophysiology. However, it is still elusive what roles Aβ play in the normal brain. In this study, we report that Aβ is required for memory forgetting in the normal brain. We monitored object recognition memory, and in order to quench soluble Aβ, we microinjected anti-Aβ antibody (4G8) into the ventricles after memory acquisition. Microinjection of anti-Aβ antibody prolonged the maintenance of object recognition memory. This effect appeared not to be due to modulation of memory consolidation since antibody injection after memory consolidation still had a similar effect on memory maintenance. Furthermore, the maintenance of object recognition memory was prolonged in Fcgr2b KO mice, which lacks IgG Fcγ receptor II-b (FcγRIIb), a receptor for soluble Aβ oligomers. Taken together, these findings suggest that endogenous Aβ is involved in memory forgetting in the normal brain.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy

The effect of substrates on the magnetic and transport properties of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM) austenite and ferrimagnetic (FiM) martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni{sub 2}Mn{sub 1.5}In{sub 0.5} films grown on MgO (001) substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

Space Radiation Effects in Advanced Flash Memories

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Johnston, A. H.↗
DOE OSTI2018

Performance Assessment of Emerging Memories Through FPGA Emulation

Emerging memory technologies offer the prospect of large capacity, high bandwidth, and a range of access latencies ranging from DRAM-like to SSD-like. In this paper, we evaluate the performance of parallel applications on CPUs whose main memories sweep a wide range of latencies within a bandwidth cap. We use an FPGA emulator, the logic in memory emulator (LiME) to accelerate evaluation. The LiME framework uses a multiprocessor system on chip (MPSoC) combining multicore CPU, integrated memory controller, and FPGA fabric, and enables emulation orders of magnitude faster than software simulation. This work highlights the performance impact of higher latency on concurrent applications and identifies conditions under which future high latency memories can effectively be used as main memory.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Models for Total-Dose Radiation Effects in Non-Volatile Memory

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

On the elastocaloric effect in CuAlBe shape memory alloys: A quantitative phase-field modeling approach

We report the reversible stress-induced phase transformation in shape memory alloys (SMAs) is a dissipative process during which heat is absorbed or released. The inherent temperature variations inside the material has an elastocaloric effect (eCE) with appealing applications in solid-state cooling technology such as compact and efficient on-board refrigeration system for eletronic devices. In this manuscript, we conduct the first study of eCE of CuAlBe SMAs utilizing phase-field modeling. For an applied stress of 500 MPa, the results for polycrystalline Cu-Al11-2Be (at. %) show a minimum adiabatic unloading temperature change of -10 K over a pseudoelastic window of 40 K. In the absence of plastic deformation, the material demonstrates good reproducibility of the eCE over a few loading–unloading cycles. The presence of plastic deformation is found to cause functional fatigue that deteriorates the cooling capacity; however, the coefficient of performance only decreases from 9.04 to 8.03, which is still a very good value. These results place CuAlBe as a frontrunner SMA for solid-state cooling compared to the expensive NiTi.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗
DOE OSTI2015

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10{sup 4}. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of different stages of deformation on the microstructure evolution of Ti-rich NiTi shape memory alloy

The main objective of this work was to investigate the thermomechanical behavior and microstructural changes of a Ti-rich NiTi shape memory alloy (SMA). The microstructural and texture evolution of aged NiTi alloy at different degrees of deformation were elicited by transmission electron microscopy (TEM). An effort was made to correlate results obtained from the tensile test with results from microstructure studies. The undeformed sample reveals a self-accommodated morphology with straight and well defined twin boundaries. At different stages of deformation, diverse mechanisms were involved. These mechanisms include marstraining, detwinning accompanied by dislocation movement, and finally, severe plastic deformation, subdivision and amorphization of the matrix. Under increasing strains, high density lattice defects were generated and the morphology of B19’ became disordered. - Graphical abstract: The summary of microstructure changes of the martensite twins during tensile deformation in polycrystalline NiTi SMAs. - Highlights: • Initial elastic response, dislocation avalanche and deformation bands were studied. • < 011 > Type II twin accompanied by detwinned area after 2% cold work was observed. • Visible parallel fine stacking faults showed plastic flow of the material. • At higher strains, subgrains changed to recrystallized, finely amorphous structure.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Radiation Effects of Commercial Resistive Random Access Memories

We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

Random Access Memory (RAM)↗
DOE OSTI2018

Simultaneously achieved large reversible elastocaloric and magnetocaloric effects and their coupling in a magnetic shape memory alloy

Large reversible caloric effects covering a broad temperature region are essential for high-efficiency and environment-friendly solid-state caloric refrigeration that can potentially replace the traditional vaporcompression-based cooling technology. Here, we report the simultaneously achieved large reversible magnetocaloric and elastocaloric effects in a Ni 43 Co 6 Mn 40 Sn 11 magnetic shape memory alloy. A reversible near-room-temperature magnetic entropy change Δ S m of as high as 19.3 J kg –1 K –1 under 5 T was experimentally obtained and the corresponding adiabatic temperature change Δ T ad was estimated to be 7.7 K. Meanwhile, a large reversible elastocaloric effect with a directly measured Δ T ad up to 7.1 K was attained. The elastocaloric effect exhibits high cyclic stability with no apparent degradation during 380 cycles of loading and unloading. Furthermore, we propose and demonstrate the utilization of the multicaloric approach under the coupled uniaxial stress and magnetic field to enlarge the refrigeration temperature region of reversible caloric effects. By combining the reversible magnetocaloric and elastocaloric effects and the reversible multicaloric effect under the coupling of uniaxial stress and magnetic field in the hysteresis region, large reversible caloric effects covering a broad temperature region from 257 K to 383 K can be obtained. Finally, this study may pave the way for designing advanced caloric materials with cyclically stable and reversible large caloric effects and wide refrigeration temperature region for solid-state refrigeration.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of Ni-Content on the Transformation Temperatures in NiTi-20 at. % Zr High Temperature Shape Memory Alloys

The effect of Ni-content on phase transformation behavior of NiTi-20 at. % Zr high temperature shape memory alloy (HTSMA) is investigated over a small composition range, i.e., 49.8, 50.0 and 50.2 at. % Ni, by differential scanning calorimetry (DSC), high-energy synchrotron radiation X-ray diffraction (SR-XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). All samples show a monoclinic B19' martensitic structure at room temperature. It is shown that even with these small variations in Ni-content, the alloy shows vastly different transformation temperatures and responds in a drastically different manner to aging treatments at 550 and 600 °C. Lastly, a discussion on H-phase composition with respect to bulk composition is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stress transfer during different deformation stages in a nano-precipitate-strengthened Ni-Ti shape memory alloy

Understanding the role of fine coherent precipitates in the micromechanical behavior of precipitate-strengthened shape memory alloys (SMAs), which still remains a mystery heretofore, is of crucial importance to the design of advanced SMAs with optimal functional and mechanical properties. Here, we investigate the lattice strain evolution of, and the stress partition between the nanoscale Ni{sub 4}Ti{sub 3} precipitates and the matrix in a precipitate-strengthened Ni-Ti SMA during different deformation stages by in-situ synchrotron high-energy X-ray diffraction technique. We found that, during R-phase reorientation and stress-induced martensitic transformation, which both involve the shear deformation process, the lattice strain of the nanoscale precipitates drastically increases by a magnitude of 0.5%, which corresponds to an abrupt increase of ∼520 MPa in internal stress. This indicates that stress repartition occurs and most of the stress is transferred to the precipitates during the shear deformation of the matrix. It is further revealed that the nanoscale precipitates which only have a low volume fraction bear a considerable amount of applied stress during all deformation stages investigated, implying that the nanoscale precipitates play an important role in the deformation behavior of the precipitate-strengthened Ni-Ti SMAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thermomechanical behavior and microstructural evolution of a Ni(Pd)-rich Ni 24.3 Ti 49.7 Pd 26 high temperature shape memory alloy

We investigated the effect of thermomechanical cycling on a slightly Ni(Pd)-rich Ni 24.3 Ti 49.7 Pd 26 (near stochiometric Ni–Ti basis with Pd replacing Ni) high temperature shape memory alloy. Furthermore, aged tensile specimens (400 °C/24 h/furnace cooled) were subjected to constant-stress thermal cycling in conjunction with microstructural assessment via in situ neutron diffraction and transmission electron microscopy (TEM), before and after testing. It was shown that in spite of the slightly Ni(Pd)-rich composition and heat treatment used to precipitation harden the alloy, the material exhibited dimensional instabilities with residual strain accumulation reaching 1.5% over 10 thermomechanical cycles. This was attributed to insufficient strengthening of the material (insufficient volume fraction of precipitate phase) to prevent plasticity from occurring concomitant with the martensitic transformation. In situ neutron diffraction revealed the presence of retained martensite while cycling under 300 MPa stress, which was also confirmed by transmission electron microscopy of post-cycled samples. Neutron diffraction analysis of the post-thermally-cycled samples under no-load revealed residual lattice strains in the martensite and austenite phases, remnant texture in the martensite phase, and peak broadening of the austenite phase. The texture we developed in the martensite phase was composed mainly of those martensitic tensile variants observed during thermomechanical cycling. Presence of a high density of dislocations, deformation twins, and retained martensite was revealed in the austenite state via in-situ TEM in the post-cycled material, providing an explanation for the observed peak broadening in the neutron diffraction spectra. Despite the dimensional instabilities, this alloy exhibited a biased transformation strain on the order of 3% and a two-way shape memory effect (TWSME) strain of ~2%, at relatively high actuation temperatures.

36 MATERIALS SCIENCE↗
NASA NTRS1998

Radiation Effects on Advanced Flash Memories

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

Nguyen, D. N.↗