Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “leakage current”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 n/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Frasca, A. J.↗
NASA NTRS1992

Electrical breakdown of Space Station Freedom surfaces

Space Station Freedom (SSF) will be the largest and highest power spacecraft that the U.S. has put into orbit. The solar array will generate 160 volts nominal when in sunlight, and the present baseline design is for the negative end of the solar array to be tied to SSF structure. Due to the balance of leakage currents through the plasma, the structure will be driven approximately 140 volts negative of the ambient conductive ionospheric plasma. Surface materials such as anodized aluminum will have this voltage drop across a thin dielectric which may not have sufficient dielectric strength to prevent dielectric breakdown. This can lead to arcing on the exterior surfaces of Space Station.

Carruth, M. R., Jr.↗
NASA NTRS1992

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.

Rosenfeld, David↗
NASA NTRS1991

Assessment of environmental effects on Space Station Freedom Electrical Power System

Analyses of EPS (electrical power system) interactions with the LEO (low earth orbit) environment are described. The results of these analyses will support EPS design so as to be compatible with the natural and induced environments and to meet power, lifetime, and performance requirements. The environmental impacts to the Space Station Freedom EPS include aerodynamic drag, atomic oxygen erosion, ultraviolet degradation, VXB effect, ionizing radiation dose and single event effects, electromagnetic interference, electrostatic discharge, plasma interactions (ion sputtering, arcing, and leakage current), meteoroid and orbital debris threats, thermal cycling effects, induced current and voltage potential differences in the SSF due to induced electric field, and contamination degradation.

Lu, Cheng-Yi↗
NASA NTRS1987

Soft x ray window encapsulant for HgI2 detectors

HgI2 is an excellent semiconductor material for a low energy, room temperature x-ray spectrometer. The high values of the atomic numbers for its constituent elements gives high x-ray and gamma ray stopping power. The band gap of HgI2 is significantly higher than other commonly used semiconductors. Owing to the large value band gap, the leakage current for HgI2 devices is smaller, thus allowing low noise performance. Devices fabricated from HgI2 crystals have demonstrated energy resolution sufficient to distinguish the x-ray emission from the neighboring elements on the periodic table. Also the power requirements of HgI2 are very low. These characteristics make a HgI2 spectrometer an ideal component in a satellite based detection system. Unfortunately, HgI2 crystals tend to deteriorate with time, even if protected by standard semiconductor encapsulants. This degradation ruins the performance of the device in terms of its energy resolution and pulse amplitude. The degrading mechanism is believed to be material loss occurring from below the electrodes, due to high vapor pressure of HgI2 at room temperature. To address this major obstacle to rapid expansion of HgI2 technology, a research program aimed at improving device stability by encapsulation with inert polymeric materials was carried out. The program focused specifically on optimizing the encapsulant materials and their deposition techniques. The principal objectives for this program were device encapsulation, device testing, and accelerated testing to ensure very long term stability of these high resolution sensors. A variety of encapsulants were investigated with the selection criteria based on their chemical diffusion barrier properties, mechanical stability, reactivity, and morphology of encapsulant films. The investigation covered different classes of encapsulants including solvent based encapsulants, vapor deposited encapsulants, and plasma polymerized encapsulants. A variety of characterization techniques were employed to examine their effectiveness in stabilizing HgI2 devices; these included permeability evaluation, vacuum and heat testing, scanning electron microscopy (SEM) as well as studying the detector performance of coated detectors. The plasma polymerized films appear to have entirely solved the HgI2 degradation problem. Another achievement of this program was the development of an accelerated testing technique which correlates extremely well with long term tesing.

Entine, G.↗
NASA NTRS1992

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 pn/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Frasca, A. J.↗
NASA NTRS1993

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Sung, K. T.↗
NASA NTRS1993

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Neudeck, Philip G.↗
NASA NTRS1990

Using advanced microelectronic test chips to qualify ASIC's for space

Qualification procedures for complex integrated circuits are being developed under a U.S. government program known as Qualified Manufacturing Lines (QML). This effort is focused on circuits designed by IC manufacturers and has not addressed application specific IC's (ASIC's) designed at system houses. The qualification procedures described here are intended to be responsive to the needs of system houses who design their own ASIC's and have them fabricated at Silicon foundries. A particular focus of this presentation will be the use of the TID (total Ionizing Dose) Chip to evaluate CMOS foundry processes and to provide parameters for circuit simulators. This chip is under development as a standard chip for qualifying the total dose aspects of ASIC's. The benefits of standardization are that the results will be well understood and easy to interpret. Data is presented and compared for 1.6 micron and 3.0 micron CMOS. The data shows that 1.6 micron CMOS is significantly harder than 3.0 micron CMOS. Two failure modes are explored: (1) the radiation-induced degradation of timing delays; and (2) radiation-induced leakage currents.

Buehler, M. G.↗
NASA NTRS1993

Results of thermal vacuum tests for the PASP+ flight modules

The PASP PLUS (Photovoltaic Array Space Power Plus Diagnostics) program is a photovoltaic experiment which will be flown on the Air Force satellite APEX (Advanced Photovoltaic And Electronic Experiment). APEX will be launched with a Pegasus during the summer of 1993. There are two other small experiments on APEX but PASP+ is the largest, uses the most power, and accounts for over 90 percent of the data requirements. The orbit is elliptical with apogee and perigee of 1050 and 190 nautical miles respectively. The inclination is 70 deg. The two main objectives of PASP+ are to determine the interactions between high voltage arrays and the space plasma environment and to determine the radiation damage characteristics of several newer types of solar cells. In order to determine the interactions with the space plasma, several of the individual cell strings will be biased to voltages up to plus or minus 500 V, and leakage currents and arcing rates will be measured. The radiation degradation characteristics will be determined by the continuous monitoring of I-V data for all of the cell strings. As part of an overall testing program, the PASP+ panels and controller were put through a thermal vacuum test in order to check the thermal analysis, obtain temperature coefficients for the individual modules, and have an end-to-end test of the entire PASP+ experiment. This thermal vacuum test is described briefly and the results obtained during that testing are discussed.

Curtis, Henry↗
NASA NTRS1993

An acoustic charge transport imager for high definition television applications

This report covers: (1) invention of a new, ultra-low noise, low operating voltage APD which is expected to offer far better performance than the existing volume doped APD device; (2) performance of a comprehensive series of experiments on the acoustic and piezoelectric properties of ZnO films sputtered on GaAs which can possibly lead to a decrease in the required rf drive power for ACT devices by 15dB; (3) development of an advanced, hydrodynamic, macroscopic simulator used for evaluating the performance of ACT and CTD devices and aiding in the development of the next generation of devices; (4) experimental development of CTD devices which utilize a p-doped top barrier demonstrating charge storage capacity and low leakage currents; (5) refinements in materials growth techniques and in situ controls to lower surface defect densities to record levels as well as increase material uniformity and quality.

Hunt, William D.↗
NASA NTRS1993

Verification of thermal analysis codes for modeling solid rocket nozzles

One of the objectives of the Solid Propulsion Integrity Program (SPIP) at Marshall Space Flight Center (MSFC) is development of thermal analysis codes capable of accurately predicting the temperature field, pore pressure field and the surface recession experienced by decomposing polymers which are used as thermal barriers in solid rocket nozzles. The objective of this study is to provide means for verifications of thermal analysis codes developed for modeling of flow and heat transfer in solid rocket nozzles. In order to meet the stated objective, a test facility was designed and constructed for measurement of the transient temperature field in a sample composite subjected to a constant heat flux boundary condition. The heating was provided via a steel thin-foil with a thickness of 0.025 mm. The designed electrical circuit can provide a heating rate of 1800 W. The heater was sandwiched between two identical samples, and thus ensure equal power distribution between them. The samples were fitted with Type K thermocouples, and the exact location of the thermocouples were determined via X-rays. The experiments were modeled via a one-dimensional code (UT1D) as a conduction and phase change heat transfer process. Since the pyrolysis gas flow was in the direction normal to the heat flow, the numerical model could not account for the convection cooling effect of the pyrolysis gas flow. Therefore, the predicted values in the decomposition zone are considered to be an upper estimate of the temperature. From the analysis of the experimental and the numerical results the following are concluded: (1) The virgin and char specific heat data for FM 5055 as reported by SoRI can not be used to obtain any reasonable agreement between the measured temperatures and the predictions. However, use of virgin and char specific heat data given in Acurex report produced good agreement for most of the measured temperatures. (2) Constant heat flux heating process can produce a much higher heating rate than the radiative heating process. The results show that heating rates of 125 C/s (225 F/s) can be achieved. (3) The electrical resistance of the FM 5055 samples were about 150 Omega in the virgin state, and decreased to about 35 Omega when charred. A reliable scheme must be developed to electrically insulate the composite from the heater foil in order to prevent any current leakage into the sample which can result in volumetric heating of the char zone of the composite.

Keyhani, M.↗
NASA NTRS1994

Effects of Combined Stressing on the Electrical Properties of Film and Ceramic Capacitors

Advanced power systems which generate, control, and distribute electrical power to many large loads are a requirement for future space exploration missions. The development of high temperature insulating materials and power components constitute a key element in systems which are lightweight, efficient, and are capable of surviving the hostile space environment. In previous work, experiments were carried out to evaluate film and ceramic capacitors for potential use in high temperature applications. The effects of thermal stressing, in air and without electrical bias, on the electrical properties of the capacitors as a function of thermal aging up to 12 weeks were determined. In this work, the combined effects of thermal aging and electrical stresses on the properties of teflon film and ceramic power capacitors were examined. The ceramic capacitors were thermally aged for 35 weeks and the teflon capacitors for 15 weeks at 200 C under full electrical bias and were characterized, on a weekly basis, in terms of their capacitance stability and electrical loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also obtained. The results obtained represent the influence that short-term thermal aging and electrical bias have on the electrical properties of the power capacitors characterized.

Overton, Eric↗
NASA NTRS1994

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Ringel, S. A.↗
NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗
NASA NTRS1995

Power control electronics for cryogenic instrumentation

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Ray, Biswajit↗
NASA NTRS1995

Gallium phosphide energy converters

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Sims, P. E.↗
NASA NTRS1996

Gallium phosphide energy converters

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

Sims, P. E.↗