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At least 361 records · Page 20

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO 3 substrates. Coupling of acoustic waves propagating in LiNbO 3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic Weyl Semimetallic Phase in Thin Films of Eu 2 Ir 2 O 7

The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, in this study, we report on the discovery of signatures for the long-sought magnetic Weyl semimetallic phase in (111)-oriented Eu 2 Ir 2 O 7 high-quality epitaxial thin films. We observed an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges right below the onset of a peculiar magnetic phase with all-in-all-out (AIAO) antiferromagnetic ordering. The anomalous Hall conductivity obtained experimentally is consistent with the theoretical prediction, likely arising from the nonzero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.

36 MATERIALS SCIENCE↗

Opposite current-induced spin polarizations in bulk-metallic Bi 2 Se 3 and bulk-insulating Bi 2 Te 2 Se topological insulator thin flakes

One of the most fundamental and exotic properties of three-dimensional (3D) topological insulators (TIs) is spin-momentum locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba-type spin-orbit interaction (SOI) and bulk-conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current-induced spin polarization (CISP) difficult. Here, we directly compared the CISP between bulk-insulating Bi 2 Te 2 Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk-insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity. However, compared to BTS221, an opposite CISP is observed in the bulk-metallic Bi2Se3, consistent with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk intrinsic spin Hall Effect (SHE). If one assumes a representative occupation of the Rashba band of 3×10 13 cm –2 in Bi 2 Se 3 with a relevant relaxation time of 100 fs, the contribution to the CISP could be more dominated by the bulk intrinsic SHE. Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetoresistance effects in cadmium arsenide thin films

In-plane magnetoresistance effects in the three-dimensional Dirac semimetal cadmium arsenide are studied as a function of film growth orientation, film thickness and surface Fermi level. For films with the Fermi level near the bulk nodes, which are gapped for very thin films, a pronounced planar Hall effect is observed due to the combination of magnetoresistance effects from the Berry phase and orbital magnetoresistance. At high Fermi levels, surface state transport produces weaker magnetoresistance effects. Furthermore, the results are discussed in the context of detecting signatures of the chiral anomaly.

36 MATERIALS SCIENCE↗

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Efficient charge to spin conversion in iridium oxide thin films

Many 5d transition metal oxides have a unique electronic structure, where the density of states near the Fermi level is dominated by only 5d electrons with strong spin–orbit coupling. IrO 2 , a Dirac nodal line semi-metal, is the simplest of these oxides. The presence of 5d electrons and gap opening of Dirac nodal lines via strong spin–orbit coupling allows for the hybridization of the 5d electrons of the oxide with the itinerant d electrons of a ferromagnet, while simultaneously increasing the intrinsic spin Hall effect. We report large charge-to-spin conversion in thin films of this material using spin-torque ferromagnetic resonance experiments. Finally, by independently performing line shape analysis and linewidth modulation experiments, we conclusively determine the spin Hall angle of optimized IrO 2 films to be ∼8 times larger than that of Pt.

Ferromagnetic materials↗

Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe 5

ZrTe 5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe 5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 160K with increasing thickness of the ZrTe 5 thin flakes from 42nm to 89nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Overall, our findings provide a multi-parameter indicator for the emergence of topological phase transition in ZrTe 5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also shed light on the role of anomalous Hall Effect in the transport properties of ZrTe 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anisotropy, frustration, and saddle point in the twisted kagome compound ErPdPb

The kagome lattice, with its inherent geometric frustration, provides a rich platform for exploring intriguing magnetic phenomena and topological electronic structures. In reduced-symmetry structures, such as twisted kagome systems involving rare earth elements, additional anisotropy can arise, enabling intriguing properties including spin-ice states, magnetocaloric effects, noncollinear magnetic ordering, and the anomalous Hall effect. Here, we report the synthesis of single crystals of ErPdPb, which features a twisted kagome lattice net of Er atoms within the hexagonal ZrNiAl-type structure, and we investigate its magnetic, electronic, and thermal properties. The material exhibits a highly anisotropic, correlated magnetic state below 2.7 K, as evidenced by magnetic, transport, and heat capacity measurements. Density functional theory (DFT) calculations indicate strong easy-axis anisotropy, consistent with experiment and crystal-field expectations, as well as quasi-one-dimensional bands and a spin-split saddle point at the zone center. Here, the coexistence of competing magnetic interactions along different crystallographic directions suggests an inherent degree of frustration. ErPdPb thus provides a promising platform for exploring the interplay of frustration, anisotropy, and electronic structure in a twisted kagome lattice.

Antiferromagnets↗

Path integral approach to quantum anomalies in interacting models

The prediction and subsequent discovery of topological semimetal phases of matter in solid state systems has instigated a surge of activity investigating the exotic properties of these unusual materials. Among these are transport signatures which can be attributed to the chiral anomaly; the breaking of classical chiral symmetry in a quantum theory. This remarkable quantum phenomenon, first discovered in the context of particle physics has now found new life in condensed-matter physics, connecting topological quantum matter and band theory with effective field theoretic models. In this paper we investigate the interplay between interactions and the chiral anomaly in field theories inspired by semimetals using Fujikawa's path integral method. Starting from models in one spatial dimension we discuss how the presence of interactions can affect the consequences of the chiral anomaly leading to renormalization of excitations and their transport properties. This is then generalized to the three-dimensional case where we show that the anomalous response of the system, namely, the chiral magnetic and quantum Hall effects, are modified by the presence of interactions. These properties are investigated further through the identification of anomalous modes which exist within interacting Weyl semimetals. These massive excitations are nonperturbative in nature and are a direct consequence of the chiral anomaly. The effects of interactions on mixed axial-gravitational anomalies are then investigated and the conditions required for interaction effects to be observed are discussed.

Anomalies↗

Regular and in-plane skyrmions and antiskyrmions from boundary instabilities

We formulate a theory of skyrmion and antiskyrmion generation using magnetic field and charge current pulses. We show that the topological defect can be created at an edge of a system with Dzyaloshinskii-Moriya interaction (DMI) as well as at a boundary between regions with different DMI. We consider both perpendicular and in-plane (also known as magnetic bimerons) versions of skyrmions and antiskyrmions. We show that the magnetization twist in the vicinity of an edge or a boundary is described by a kink solution, the presence of which can instigate the generation of topological defects. We study the collective excitations of magnetization analytically and numerically, and demonstrate that under application of magnetic field and charge current pulses the magnon modes localized near boundaries can develop instabilities leading to the formation of skyrmions or antiskyrmions. As a result, due to the skyrmion and antiskyrmion Hall effects, a properly chosen current direction can push the topological defects away from the boundary, thus facilitating their generation.

36 MATERIALS SCIENCE↗

Widely Tunable Berry Curvature in the Magnetic Semimetal Cr 1+ δ Te 2

Abstract Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin‐based topological phenomena in real and momentum spaces. Cr 1+ δ Te 2 is a self‐intercalated magnetic transition metal dichalcogenide (TMD), which exhibits topological magnetism and tunable electron filling. While recent studies have explored real‐space Berry curvature effects, similar considerations of momentum‐space Berry curvature are lacking. Here, the electronic structure and transport properties of epitaxial Cr 1+ δ Te 2 thin films are systematically investigated over a range of doping, δ (0.33 – 0.71). Spectroscopic experiments reveal the presence of a characteristic semi‐metallic band region, which shows a rigid like energy shift with δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable and undergoes a sign flip across δ. Finally, density functional theory calculations establish a link between the doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi‐metallic band region crosses the Fermi energy. These findings underscore the increasing relevance of momentum‐space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.

36 MATERIALS SCIENCE↗

Mechanism for Anomalous Hall Ferromagnetism in Twisted Bilayer Graphene

Motivated by the recent observation of an anomalous Hall effect in twisted bilayer graphene, here we use a lowest Landau level model to understand the origin of the underlying symmetry-broken correlated state. This effective model is rooted in the occurrence of Chern bands which arise due to the coupling between the graphene device and its encapsulating substrate. Our model exhibits a phase transition from a spin-valley polarized insulator to a partial or fully valley unpolarized metal as the bandwidth is increased relative to the interaction strength, consistent with experimental observations. In sharp contrast to standard quantum Hall ferromagnetism, the Chern number structure of the flat bands precludes an instability to an intervalley coherent phase, but allows for an excitonic vortex lattice at large interaction anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Kondo interaction of quantum spin Hall edge channels with charge puddles

Under time-reversal symmetry, quantum spin Hall edge channels are protected against elastic backscattering. However, even for samples which exhibit conductance quantization due to the quantum spin Hall effect, reproducible fluctuations shape the quantization plateau when the chemical potential is tuned through the bulk gap. Here, we examine those fluctuations in micron-sized HgTe quantum well devices. By performing temperature- and gate-dependent measurements, we conclude that “charge puddles” in the narrow-gap material have a Kondo-type interaction with the edge channels resulting in the observed conductance fluctuations. Our results provide insight into the underlying mechanisms of scattering in quantum spin Hall edge channels.

36 MATERIALS SCIENCE↗

Composite Fermion Pairing Induced by Landau Level Mixing

Pairing of composite fermions provides a possible mechanism for fractional quantum Hall effect at even denominator fractions and is believed to serve as a platform for realizing quasiparticles with non-Abelian braiding statistics. We present results from fixed-phase diffusion Monte Carlo calculations which predict that substantial Landau level mixing can induce a pairing of composite fermions at filling factors v = 1/2 and v = 1/4 in the l = -3 relative angular momentum channel, thereby destabilizing the composite-fermion Fermi seas to produce non-Abelian fractional quantum Hall states.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Edge Channel Transmission through a Quantum Point Contact in the Two-Dimensional Topological Insulator Cadmium Arsenide

Cadmium arsenide (Cd 3 As 2 ) thin films feature a two-dimensional topological insulator (2D TI) phase for certain thicknesses, which theoretically hosts a set of counterpropagating helical edge states that are characteristic of a quantum spin Hall (QSH) insulator. In devices containing electrostatically defined junctions and for magnetic fields below a critical value, chiral edge modes of the quantum Hall effect can coexist with QSH-like edge modes. In this work, we use a quantum point contact (QPC) device to characterize edge modes in the 2D TI phase of Cd 3 As 2 and to understand how they can be controllably transmitted, which is important for use in future quantum interference devices. We investigate equilibration among both types of modes and find non-spin-selective equilibration. We also demonstrate the effect of the magnetic field on suppressing equilibration. We discuss the potential role of QSH-like modes in a transmission pathway that precludes full pinch-off.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic imaging of topological phases of matter (Final Report)

This project presents a detailed understanding of the local electronic transport in two different types of conductors. The experimental tools are a combination of local magnetic probes and electronic transport measurements. The first set of samples were superconducting microstructures that exhibited unusual transport behavior. Magnetic imaging revealed the presence of a strain field in the microstructures, which spatially modulated the superconducting properties. This strain field can be controlled through a variety of design parameters opening opportunities for a broad range of quantum materials including topological phases of matter. The second set of samples was fabricated from Cr-doped (Bi,Sb) 2 Te 3 heterostructures that exhibited the quantum anomalous Hall effect (QAHE). Magnetic imaging visualized the current flow in these devices, while simultaneous transport measurements verified that the devices exhibit the QAHE. Surprisingly, the current flowed in the interior of the sample even when exhibiting a high level of quantization.

36 MATERIALS SCIENCE↗

Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Abstract The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results in large‐area single‐crystalline cesium lead bromide (CsPbBr 3 ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin‐film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap‐free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall‐effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm 2 V −1 s −1 at room temperature to ≈250 cm 2 V −1 s −1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon‐limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high‐performance perovskite electronic devices.

36 MATERIALS SCIENCE↗

Composite anyons on a torus

An adiabatic approach put forward by Greiter and Wilczek interpolates between the integer quantum Hall effects of electrons and composite fermions by varying the statistical flux bound to electrons continuously from zero to an even integer number of flux quanta, such that the intermediate states represent anyons in an external magnetic field with the same “effective” integer filling factor. We consider such anyons on a torus, and construct representative wave functions for their ground as well as excited states. These wave functions involve higher Landau levels in general, but can be explicitly projected into the lowest Landau level for many parameters. We calculate the variational energy gap between the first excited state and ground state and find that it remains open as the statistical phase is varied. Lastly, we obtain from these wave functions, both analytically and numerically, various topological quantities, such as ground-state degeneracy, the Chern number, and the Hall viscosity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗