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A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.
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The distribution of Ga between solid Fe metal and synthetic basaltic melt is investigated experimentally at temperatures of 1190 and 1330 C, and over a narrow range of oxygen fugacities. Metal-silicate reversal experiments were conducted, indicating a close approach to equilibrium. The analysis of the partitioned products was performed using electron and ion microprobes. At one bar total pressure, the solid metal/silicate melt partition coefficient D(Ga) is used to evaluate metal-silicate fractionation processes in the earth, moon, and Eucrite Parent Body (EPB). It is found that the depletion of Ga abundances in the EPB is due to the extraction of Ga into a metallic core. Likewise, the depletion of Ga in the lunar mantle is consistent with the extraction of Ga into a smaller lunar core if Ga was originally present in a subchondritic concentration. The relatively high Ga abundances in the earth's mantle are discussed, with reference to several theoretical models.
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The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.
The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).
GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Experiments were conducted to examine the effects on the room temperature photovoltaic properties of cells due to heating in a vacuum at temperatures encountered in radiation damage annealing. Some degradation of photovoltaic properties was observed for all the cells that were heated. The lifetime, due to heating, for a 20-percent degradation in output power was estimated for cells heated at 200 C and 400 C. The results for cells that were heated at 200 C for 1750 hours indicate a lifetime of at least 3 years. The results for cells that were heated at 400 C for 264 hours indicate that lifetimes in the range of 350 hours to 1400 hours may be expected. The results indicate that for cells that must be heated at 400 C the selection of fabrication techniques and materials is particularly important.
Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.
n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.
Recent calculations have shown that significant open circuit voltage gains are possible with a dot grating junction geometry. The feasibility of applying the dot geometry to the GaAs cell was investigated. This geometry is shown to result in voltages approach 1.120 V and efficiencies well over 25 percent (AMO) if good collection efficiency can be maintained. The latter is shown to be possible if one chooses the proper base resistivity and cell thickness. The above advances in efficiency are shown to be possible in the P-base cell with only minor improvements in existing technology.
Under ideal conditions the GaAs solar cell should be able to operate at an AMO efficiency exceeding 27 percent, whereas to date the best measured efficiencies barely exceed 19 percent. Of more concern is the fact that there has been no improvement in the past half decade, despite the expenditure of considerable effort. State-of-the-art GaAs efficiency is analyzed in an attempt to determine the feasibility of improving on the status quo. The possible gains to be had in the planar cell. An attempt is also made to predict the efficiency levels that could be achieved with a grating geometry. Both the N-base and the P-base BaAs cells in their planar configurations have the potential to operate at AMO efficiencies between 23 and 24 percent. For the former the enabling technology is essentially in hand, while for the latter the problem of passivating the emitter surface remains to be solved. In the dot grating configuration, P-base efficiencies approaching 26 percent are possible with minor improvements in existing technology. N-base grating cell efficiencies comparable to those predicted for the P-base cell are achievable if the N surface can be sufficiently passivated.
The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.
The composition and possible history of the Qingshen (EH3) chondrite is presented. The chondrite contains a population of spheroidal metal-sulfide nodules, which display textural evidence of reheating and melting. Evidence of metal sulfuration is also present, suggesting replacement of metal by sulfide during melting. This process has led to the nucleation of perryite along metal-sulfide interfaces. The Ga-bearing sphalerite that was found may have formed by injection of molten sulfide droplets into the metal followed by subsolidus diffusion of Ga from the metal into the sulfide. The latter may occur because of Ga supersaturation in the metal during progressive sulfuration and its decreased affinity for the metal phase during cooling below the taenite-kamacite transition point.
The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.
The modeled cascade cells offer an alternative to conventional series cascade designs that require a monolithic intercell ohmic contact. Selective electrodes provide a simple means of fabricating three-terminal devices, which can be configured in complementary pairs to circumvent the attendant losses and fabrication complexities of intercell ohmic contacts. Moreover, selective electrodes allow incorporation of additional layers in the upper subcell which can improve spectral response and increase radiation tolerance. Realistic simulations of such cells operating under one-sun AMO conditions show that the seven-layer structure is optimum from the standpoint of beginning-of-life efficiency and radiation tolerance. Projected efficiencies exceed 26 percent. Under higher concentration factors, it should be possible to achieve efficiencies beyond 30 percent. However, to simulate operation at high concentration will require a model for resistive losses. Overall, these devices appear to be a promising contender for future space applications.
Recent calculations have shown that significant open circuit voltage gains are possible with a dot grating junction geometry. The feasibility of applying the dot geometry to the GaAs cell was investigated. This geometry is shown to result in voltage approach 1.120 V and efficiencies well over 25 percent (AM0) if good collection efficiency can be maintained. The latter is shown to be possible if one chooses the proper base resistivity and cell thickness. The above advances in efficiency are shown to be possible in the P-base cell with only minor improvements in existing technology.
The design for a 1-GHz digital integrated circuit tester for the evaluation of custom GaAs chips and subsystems is discussed. Technology-related problems affecting the design of a GaAs computer are discussed, with emphasis on the problems introduced by long printed-circuit-board interconnect. High-speed interface modules provide a link between the low-speed microprocessor and the chip under test. Memory-multiplexer and memory-shift register architectures for the storage of test vectors are described in addition to an architecture for local data storage consisting of a long chain of GaAs shift registers. The tester is constructed around a VME system card cage and backplane, and very little high-speed interconnect exists between boards. The tester has a three part self-test consisting of a CPU board confidence test, a main memory confidence test, and a high-speed interface module functional test.
The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.