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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

A cesium TELEC experiment at Lewis Research Center

The thermoelectronic laser energy converter (TELEC), was studied as a method of converting a 10.6 mm CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma was produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt. The magnitudes of these electric outputs were smaller than anticipated but consistent with the power levels of the laser during this experiment.

Britt, E. J.↗
NASA NTRS1982

Status of thermoelectronic laser energy conversion, TELEC

A concept known as a thermo-electronic laser energy converter (TELEC), was studied as a method of converting a 10.6 micron CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma were produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt.

Britt, E. J.↗
NASA NTRS1991

Electrical-Discharge Machining With Additional Axis

Proposed electrical-discharge-machining (EDM) apparatus uses moveable vertical wire as electrode. Wire positionable horizontally along one axis as it slides vertically past workpiece. Workpiece indexed in rotation about horizontal axis. Because of symmetry of parts, process used to make two such parts at a time by defining boundary between them. Advantages: cost of material reduced, imparts less residual stress to workpiece, and less time spent machining each part when parts produced in such symmetrical pairs.

Malinzak, Roger M.↗
NASA NTRS1990

Studies on the properties and performance of TiS2 cathodes

Influence of raw material source, processing methods, and cell operating voltage limits on the performance of TiS2 cathode was examined. Raw materials obtained from three different sources were investigated. TiS2 electrodes were fabricated by painting, rolling, and pressing methods. Raw materials and electrodes were characterized for their physical, chemical, and electrochemical properties. The results obtained indicated that the performance of TiS2 cathodes was dependent on the purity and stoichiometry of the TiS2 material. Fabrication methods were found to have minimal influence on the performance of cathodes. The capacity loss observed during the early stages of cycling was attributed to the trapping of lithium in TiS2. Operating voltage limits were found to have significant influence on the cycle life performance of the cells.

Huang, C.-K.↗
NASA NTRS1996

Design of a nonlinear, thin-film Mach-Zehnder interferometer

A Mach-Zehnder interferometer consists of a 3 db splitter to create the two separate beams, an optical path difference to control the interference between the two beams and another 3 db coupler to reconstruct the output signal. The performance of each of its components has been investigated. Since an optical path difference is required for its function, the performance of a Mach-Zehnder interferometer is not very sensitive to construction parameters. In designing an interferometer for this work, the following considerations must be observed: the interferometer is to be made of phthalocyanine or polydiacetylene thin films; in order to avoid thermal effects which are slower, the wavelength chosen must not be absorbed in either one or two photon processes; the wavelength chosen must be easily generated (laser line); the spacing between the interferometer arms must be large enough to allow attachment of external electrodes; the vapor deposition apparatus can accept disks no larger than 0.9 inches; and the design must allow multiple layer coating in order to determine the optimum film thickness or to change to another substance.

Pearson, Earl F.↗
NASA NTRS2000

An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining micro g and sub-micro g resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 microns polysilicon film with embedded 25-35 microns-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm x 1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 4-mm x 1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 micro g/sqrt(Hz) and 0.16 micro g/sqrt(Hz), respectively.

Non-NASA Center↗
NASA NTRS1995

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto

Production of an electric voltage in response to mechanical excitation (piezoelectricity) or thermal excitation (pyroelectricity) requires a material to have a preferred dipole orientation in its structure. This preferred orientation or polarization occurs naturally in some crystals such as quartz and can be induced into some ceramic and polymeric materials by application of strong electric or mechanical fields. For some materials, a combination of mechanical and electrical orientation is necessary to completely polarize the material. The only commercially available piezoelectric polymer is poly(vinylidene fluoride) (PVF2). However, this polymer has material and process limitations which prohibit its use in numerous device applications where thermal stability is a requirement. By the present invention, thermally stable, piezoelectric and pyroelectric polymeric substrates were prepared from polymers having a softening temperature greater than 1000C. A metal electrode material is deposited onto the polymer substrate and several electrical leads are attached to it. The polymer substrate is heated in a low dielectric medium to enhance molecular mobility of the polymer chains. A voltage is then applied to the polymer substrate inducing polarization. The voltage is then maintained while the polymer substrate is cooled 'freezing in' the molecular orientation. The novelty of the invention resides in the process of preparing the piezoelectric and pyroelectric polymeric substrate. The nonobviousness of the invention is found in heating the polymeric substrate in a low dielectric medium while applying a voltage.

Simpson, Joycelyn O.↗
NASA NTRS2000

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗
NASA NTRS1986

Breakdown characteristics of an isolated conducting object in a uniform electric field

A laboratory experiment was conducted to determine the physical processes involved in the electrical breakdown of a particular spark gap arrangement. The gap consists of an isolated conducting ellipsoid located midway between two large flat electrodes. Gradual increase of the applied electric field, E, in the gap produces corona on the ellipsoid tips followed by flashover in a leader-arc sequence. The leader phase consists of the abrupt formation of ionized channels which partially bridge the gap and then decay prior to the arc. Measurements of dE/dt and of current were made, and photographs were taken with an image converter. Experimental parameters are listed.

Grothaus, M. G.↗
NASA NTRS2013

A Particle-in-Cell Simulation for the Traveling Wave Direct Energy Converter (TWDEC) for Fusion Propulsion

A Particle-in-cell simulation model has been developed to study the physics of the Traveling Wave Direct Energy Converter (TWDEC) applied to the conversion of charged fusion products into electricity. In this model the availability of a beam of collimated fusion products is assumed; the simulation is focused on the conversion of the beam kinetic energy into alternating current (AC) electric power. The model is electrostatic, as the electro-dynamics of the relatively slow ions can be treated in the quasistatic approximation. A two-dimensional, axisymmetric (radial-axial coordinates) geometry is considered. Ion beam particles are injected on one end and travel along the axis through ring-shaped electrodes with externally applied time-varying voltages, thus modulating the beam by forming a sinusoidal pattern in the beam density. Further downstream, the modulated beam passes through another set of ring electrodes, now electrically oating. The modulated beam induces a time alternating potential di erence between adjacent electrodes. Power can be drawn from the electrodes by connecting a resistive load. As energy is dissipated in the load, a corresponding drop in beam energy is measured. The simulation encapsulates the TWDEC process by reproducing the time-dependent transfer of energy and the particle deceleration due to the electric eld phase time variations.

Chap, Andrew↗
NASA NTRS1981

Fluidized bed heating process and apparatus

Capacitive electrical heating of a fluidized bed enables the individual solid particles within the bed to constitute the hottest portion thereof. This effect is achieved by applying an A. C. voltage potential between dielectric coated electrodes, one of which is advantageously the wall of the fluidized bed rejection zone, sufficient to create electrical currents in said particles so as to dissipate heat therein. In the decomposition of silane or halosilanes in a fluidized bed reaction zone, such heating enhances the desired deposition of silicon product on the surface of the seed particles within the fluidized bed and minimizes undesired coating of silicon on the wall of the reaction zone and the homogeneous formation of fine silicon powder within said zone.

McHale, Edward J.↗
NASA NTRS2015

How to Characterize the Reliability of Ceramic Capacitors with Base-Metal Electrodes (BMEs)

The reliability of an MLCC device is the product of a time-dependent part and a time-independent part: 1) Time-dependent part is a statistical distribution; 2) Time-independent part is the reliability at t0, the initial reliability. Initial reliability depends only on how a BME MLCC is designed and processed. Similar to the way the minimum dielectric thickness ensured the long-term reliability of a PME MLCC, the initial reliability also ensures the long term-reliability of a BME MLCC. This presentation shows new discoveries regarding commonalities and differences between PME and BME capacitor technologies.

Ceramic Capacitors↗
NASA NTRS1982

U.S. welding technology - Constraints to space implementation

U.S. and European efforts to develop welding techniques for satellite solar arrays are described. Soldering practices in the U.S. have benefitted from Mo solders, which are well fitted to Si solar cell material thermal characteristics. Analyses have indicated that welds are the preferred method for interconnections and bonds. Extensive work has been done with the parallel gap resistance method (RW), which involves process heat generated by passing a current through resistive layers. Confining the primary heat input to the interconnector/cell contact interface results in welds being formed beneath both electrodes. Pulse welding has become the dominant RW technique in Europe, while ultrasonic welding is used in the U.S.; silver is employed as the interconnect material on both continents. The bonding techniques have been developed empirically instead of theoretically. An IR inspection technique has been produced for monitoring the weld temperature.

Stella, P. M.↗
NASA NTRS1986

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Rustioni, M.↗
NASA NTRS1990

Lunar oxygen and metal for use in near-Earth space: Magma electrolysis

Because it is energetically easier to get material from the Moon to Earth orbit than from the Earth itself, the Moon is a potentially valuable source of materials for use in space. The unique conditions on the Moon, such as vacuum, absence of many reagents common on the Earth, and the presence of very nontraditional ores suggest that a unique and nontraditional process for extracting materials from the ores may prove the most practical. With this in mind, an investigation of unfluxed silicate electrolysis as a method for extracting oxygen, iron, and silicon from lunar regolith was initiated and is discussed. The advantages of the process include simplicity of concept, absence of need to supply reagents from Earth, and low power and mass requirements for the processing plant. Disadvantages include the need for uninterrupted high temperature and the highly corrosive nature of the high-temperature silicate melts which has made identifying suitable electrode and container materials difficult.

Colson, Russell O.↗
NASA NTRS1990

Lunar oxygen and metal for use in near-earth space - Magma electrolysis

The unique conditions on the moon, such as vacuum, absence of many reagents common on the earth, and presence of very nontraditional 'ores', suggest that a unique and nontraditional process for extracting materials from the ores may prove the most practical. An investigation has begun into unfluxed silicate electrolysis as a method for extracting oxygen, Fe, and Si from lunar regolith. The advantages of the process include simplicity of concept, absence of need to supply reagents from the earth, and low power and mass requirements for the processing plant. Disadvantages include the need for uninterrupted high temperature and the highly corrosive nature of the high-temperature silicate melts, which has made identifying suitable electrode and container materials difficult.

Colson, Russell O.↗
NASA NTRS2015

How to Characterize the Reliability of Ceramic Capacitors with Base-Metal Electrodes (BMEs)

The reliability of an MLCC device is the product of a time-dependent part and a time-independent part: 1) Time-dependent part is a statistical distribution; 2) Time-independent part is the reliability at t=0, the initial reliability. Initial reliability depends only on how a BME MLCC is designed and processed. Similar to the way the minimum dielectric thickness ensured the long-term reliability of a PME MLCC, the initial reliability also ensures the long term-reliability of a BME MLCC. This presentation shows new discoveries regarding commonalities and differences between PME and BME capacitor technologies.

Reliability↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗