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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Disinfection system with high throughput and low power requirements

Devices, methods and techniques are disclosed to perform high confidence sterilization of indoor air with low power requirements. In one example aspect, a sterilization device includes a power source, an energy storage coupled to the power source and configured to store electric charges, a set of electrodes arranged in a specified geometry to have a fixed characteristic impedance, and a switch positioned between the energy storage and the set of electrodes. The switch is configured to operate to establish a pulsed electric field on the set of electrodes.

Sampayan, Stephen↗
DOE OSTI2022

Evidence for spin swapping in an antiferromagnet

Antiferromagnetic insulators offer strategic advantages in spintronic applications because of their negligible stray fields and ultrafast magnetic dynamics. Control of their magnetization and readout of their magnetic state are essential for these applications but remain challenging. In this work, we report the electrical detection of room-temperature magnetization switching in the canted antiferromagnetic insulator LaFeO 3 , capped with a Pt or W overlayer. The observation of a large magneto-thermovoltage with an in-plane temperature gradient suggests that the mechanism is the swapping of spin currents in the antiferromagnet. This effect provides a sensitive electrical probe of the tiny net magnetization in the insulator, which can be manipulated by a magnetic field on the order of 10 mT. Our results highlight a new material class of insulating canted antiferromagnets for spintronics and spin caloritronics and suggests a method for the electrical readout of magnetic signals in an antiferromagnetic insulator. Electrical readout of the state of an antiferromagnet is an important goal for spintronic applications. Now, detection of the electrical voltage created by a thermal gradient in a canted antiferromagnet suggests a route for achieving this goal.

42 ENGINEERING↗
NASA NTRS1979

System for automatically switching transformer coupled lines

A system is presented for automatically controlling transformer coupled alternating current electric lines. The secondary winding of each transformer is provided with a center tap. A switching circuit is connected to the center taps of a pair of secondary windings and includes a switch controller. An impedance is connected between the center taps of the opposite pair of secondary windings. The switching circuit has continuity when the AC lines are continuous and discontinuity with any disconnect of the AC lines. Normally open switching means are provided in at least one AC line. The switch controller automatically opens the switching means when the AC lines become separated.

Dwinell, W. S.↗
NASA NTRS1980

Release mechanism for releasing and reattaching experiments on the Space Shuttle

The release mechanism (REM) unlatches an experiment so that it can be moved about inside and outside the shuttle bay by the remote manipulator system (RMS), and then reattaches it to the REM base. Operated from the crew compartment after the RMS has been attached to the experiment, the REM releases the experiment by an electric motor driving a gear train and linkage which extracts four pins from holes in four plates. Electrical connectors on the REM are disengaged by the mechanical action of the structural pins retracting from the plates. When the REM releases the experiment, an unlatched indicator is actuated in the crew compartment, and then the experiment can be moved by using the RMS. To reattach the experiment to the REM, the RMS places the experiment with REM attachment angles against the flat, smooth surface of the REM; then the RMS moves the experiment into position for latchup. Actuation of an electric motor drives the four pins into the four holes in the plates. When fully latched, a switch actuated by the motion of the linkage, shuts the electric motor off and gives an indication to the crew compartment that the REM is latched.

Clark, A. V.↗
NASA NTRS1987

Two-Range Electrical Thermometer

Thermocouple and resistance thermometer expand thermometer scale. Switch thrown up to connect platinum resistance temperature detector or down to connect (platinum/rhodium)/platinum thermocouple to meter. Thermocouple integral part of platinum resistance temperature detector wiring.

Bridges, W. F.↗
NASA NTRS1989

Electrolytic Heat Switch

Experiments demonstrated feasibility of electrolytic device of electrically-controllable thermal conductivity. Device includes inner ionomeric layer of low thermal conductivity sandwiched between two metal-foil electrodes. Device's ionomeric layer will be conductive polymer - perhaps polyaniline. In effect, device will be metal/conductive-polymer secondary electrical cell.

Walsh, Miles↗
DOE OSTI2021

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗
NASA NTRS1991

High current, high bandwidth laser diode current driver

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Copeland, David J.↗
DOE OSTI2020

Energy Options Analysis Project (Final Report)

This Bear River Band of Rohnerville Rancheria (BRB) Energy Options Analysis Project provides a rigorous and comprehensive near-term renewable energy implementation plan that aligns with the BRB’s long term strategic vision of “zero net annual utility energy consumption.” Final recommendations were arrived at by following four key project phases:A gas and electricity load assessment was conducted for all existing buildings using historic consumption data, and projected loads of new or anticipated buildings using building designs. A renewable energy resource assessment was conducted that estimated the gross generation potential of solar and wind, constrained to areas that could potentially be developed. Other renewable generation technologies were not considered feasible to meet the loads of the BRB. Demand-side efficiency and fuel switching opportunities were identified that can reduce electrical and gas consumption. These opportunities were not integrated into the load assessment in order to provide a conservative implementation plan, but are recommended to be pursued in order to cost-optimize projects during a feasibility assessment. A strategic vision advisory committee was organized and consulted when iterating on the viability of possible projects. These project phases resulted in finalizing the following three solar PV projects for the near term, which also lay the foundation for a future community-scale or multiple-facility microgrid for added resiliency. Additional solar PV on the hillside south of the Tish-Non Community Center. Solar plus battery storage microgrid at the Pump & Play fuel station. Solar PV at the Casino.

14 SOLAR ENERGY↗
NASA NTRS2017

Coupling Inductor Based Hybrid Millimeter-Wave Switch

A switch comprising a plurality of inductors and a plurality of shunt transistors is described. Each inductor can be electrically coupled between adjacent shunt transistors to form a distributed switch structure. At least two inductors in the plurality of inductors can be inductively coupled with each other. The plurality of inductors can correspond to portions of a coupling inductor, wherein the coupling inductor can have an irregular octagonal shape.

Shu, Ran↗
DOE OSTI2020

Relationship among the Crystal Structure, Texture, and Macroscopic Properties of Tetragonal (Pb,La)(Zr,Ti)O 3 Ferroelectrics Investigated by In Situ High-Energy Synchrotron Diffraction

In situ diffraction investigations have played an important role in experimentally revealing the mechanism of piezoelectric and ferroelectric properties. In this study, a pure tetragonal ferroelectric ceramic of La-doped PbZr 0.5 Ti 0.5 O 3 (LaPZT50) was investigated to eliminate the complex influence of phase coexistence. The electric field evolutions of the crystal structure, domain switching, and lattice deformation of the tetragonal phase have been revealed by in situ high-energy synchrotron X-ray diffraction. Furthermore, we found that the crystal structure of LaPZT50 is quite stable, showing a negligible change in the Pb–O bond length, unit cell volume, and spontaneous polarization upon application of an in situ external electric field. Importantly, the maximum macroscopic polarization of tetragonal LaPZT50 is defined by the 111-oriented grains. As determined by the intensity difference, the switching of non-180° domains plays a more significant role in contributing to the macroscopic strain than lattice deformation. These results further imply that the phase coexistence around the morphotropic phase boundary facilitates domain wall motion in the tetragonal phase and improves the ferroelectric and piezoelectric properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Revealing atomic-scale switching pathways in van der Waals ferroelectrics

Two-dimensional (2D) van der Waals (vdW) materials hold the potential for ultrascaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting substantial challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group IV monochalcogenide. Our results uncover the coexistence of a consecutive 90° switching pathway and a direct 180° switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices.

Li, Xinyan [Rice University, Houston, TX (United S↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗
NASA NTRS1995

AC motor controller with 180 degree conductive switches

An ac motor controller is operated by a modified time-switching scheme where the switches of the inverter are on for electrical-phase-and-rotation intervals of 180.degree. as opposed to the conventional 120.degree.. The motor is provided with three-phase drive windings, a power inverter for power supplied from a dc power source consisting of six switches, and a motor controller which controls the current controlled switches in voltage-fed mode. During full power, each switch is gated continuously for three successive intervals of 60.degree. and modulated for only one of said intervals. Thus, during each 60.degree. interval, the two switches with like signs are on continuously and the switch with the opposite sign is modulated.

Oximberg, Carol A.↗
NASA NTRS1995

Operational characteristics of a 200 C LC parallel resonant circuit

Research efforts are currently underway at the NASA Lewis Research Center to design and demonstrate an inverter capable of operating with a baseplate temperature of 200 C. In support of this project, various electrical components including capacitors, inductors, transformers, cables, and semiconductor switches are being developed or evaluated for integration into the inverter. In this work, a parallel LC resonant circuit was constructed and evaluated under simultaneous electrical and thermal stressing. The tests were performed in the temperature range of 25 to 200 C with an applied voltage of up to 90 V, 20 kHz. The individual components were comprised of high temperature film capacitors and powder core inductors developed in-house. The circuit was characterized in terms of the component currents and case temperatures as well as frequency of resonance as a function of applied bias and temperature. The results obtained, which have indicated good functional stability up to 200 C, are presented and discussed.

Baumann, Eric D.↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
NASA NTRS2003

Twinning, Epitaxy and Domain Switching in Ferroelastic Inclusion Compounds

Our research is in the area of solid-state organic chemistry, which lies at the interface between physical organic chemistry and materials science. We use crystalline solids as models to probe fundamental issues about physical processes, molecular interactions and chemical reactions that are important for fabrication, stabilization and application of technological materials. Much of our most recent work has focused on the phenomena of ferroelastic and ferroelectric domain switching, in which application of an external force or electric field to a crystal causes the molecules inside the crystal to reorient, in tandem, to a new orientational state. To better understand and control the domain switching process, we have designed and synthesized over twenty closely related, ferroelastic organic crystals. Our approach has been to use crystalline inclusion compounds, in which one molecule (the guest) is trapped within the crystalline framework of a second molecule (the host). By keeping the host constant and varying the proportions and kinds of guests, it has been possible to tailor these materials so that domain switching is rapid and reversible (which is desirable for high technology applications). Inclusion compounds therefore serve as powerful systems for understanding the specific molecular mechanisms that control domain switching.

Hollingsworth, Mark D.↗
DOE OSTI2023

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co] N , which are either highly textured on single crystalline MgO substrates or randomly textured on SiO 2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

42 ENGINEERING↗