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354 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Microwave Temperature Profiler Mounted in a Standard Airborne Research Canister

Many atmospheric research aircraft use a standard canister design to mount instruments, as this significantly facilitates their electrical and mechanical integration and thereby reduces cost. Based on more than 30 years of airborne science experience with the Microwave Temperature Profiler (MTP), the MTP has been repackaged with state-of-the-art electronics and other design improvements to fly in one of these standard canisters. All of the controlling electronics are integrated on a single 4 ~5-in. (.10 ~13- cm) multi-layer PCB (printed circuit board) with surface-mount hardware. Improved circuit design, including a self-calibrating RTD (resistive temperature detector) multiplexer, was implemented in order to reduce the size and mass of the electronics while providing increased capability. A new microcontroller-based temperature controller board was designed, providing better control with fewer components. Five such boards are used to provide local control of the temperature in various areas of the instrument, improving radiometric performance. The new stepper motor has an embedded controller eliminating the need for a separate controller board. The reference target is heated to avoid possible emissivity (and hence calibration) changes due to moisture contamination in humid environments, as well as avoiding issues with ambient targets during ascent and descent. The radiometer is a double-sideband heterodyne receiver tuned sequentially to individual oxygen emission lines near 60 GHz, with the line selection and intermediate frequency bandwidths chosen to accommodate the altitude range of the aircraft and mission.

Mahoney, Michael J.↗
NASA NTRS1995

Plasma gradient effets on doubel-probe measurements in the magnetosphere

The effects on double-probe electric field measurements induced by electron density and temperature gradients are investigated. We show that on some occasions such gradients may lead to marked spurious electric fields if the probes are assumed to lie at the same probe potential with repect to the plasma. The use of a proper bias current will decrease the magnitude of such an error. When the probes are near the plasma potential, the magnitude of these error signals, delta Epsilon, can vary as delta Epsilon approx. T(sub e)(Delta n(sub e)/n(sub e)) + 0.5 Delta T(sub e), where T(sub e) is the electron temperature, Delta n(sub e)/ n(sub e) the relative electron density variation between the two sensors, and Delta T(sub e) the electron temperature difference between the two sensors. This not only implies that the error signals will increase linearly with the density variations but also that such signatures grow with Delta T(sub e) i.e., such effects are 10 times larger in a 10-eV plasma than in a 1-eV plasma. This type of error is independent of the probe separation distance provided the gradient scale length is much larger than the distance. The largest errors occur when the probes are near to the plasma potential. During the crossing of a small structure (e.g, a double layer) the error signal appears as a bipolar signature. Our analysis shows that errors in double-probe measurements caused by plasma gradients are not significant at large scale (much greater than 1 km) plasma boundaries, and may only be important in cases where small-scale (less than 1 km), internal gradient structures exist. Bias currents tailored for each plasma parameter regime (i.e., variable bias current) would improve the double-probe response to gradient effects considerably.

Laakso, Harri↗
DOE OSTI2021

Measurement of the ionization response of amorphous selenium with 122 keV γ rays

In this work, we performed a measurement of the ionization response of 200 μm-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/μm. The aSe target was exposed to ionizing radiation from a 57 Co radioactive source and the ionization pulses were recorded with high resolution. Using the spectral line from the photoabsorption of 122 keV γ rays, we measured the charge yield in aSe and the line width as a function of drift electric field. From a detailed microphysics simulation of charge generation and recombination in aSe, we conclude that the strong dependence of recombination on the ionization track density provides the dominant contribution to the energy resolution in aSe. These results provide valuable input to estimate the sensitivity of a proposed next-generation search for the neutrinoless ββ decay of 82 Se that aims to employ imaging sensors with an active layer of aSe. We estimate the RMS line width of the integrated ionization signal from neutrinoless ββ decay events (of deposited energy 3 MeV) to be 2.0% for a drift field of 50 V/μm. The energy resolution can be improved to 1% by correcting for the charge yield as a function of ionization density along the imaged electron tracks.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Characterization of Amplification Properties of the Superconducting-Ferromagnetic Transistor

Here we report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Anisotropic magnetism and electronic structure of trigonal EuAl 2 Ge 2 single crystals

Understanding the interplay between magnetic and electronic degrees of freedom is of profound recent interest in different Eu-based magnetic topological materials. Here, we studied the magnetic and electronic properties of the layered Zintl-phase compound EuAl 2 Ge 2 crystallizing in the trigonal CaAl 2 Si 2 -type structure. We report zero-field neutron diffraction, temperature T - and magnetic-field H-dependent magnetic susceptibility χ(T, H), isothermal magnetization M(T, H), heat capacity C p (T, H), and electrical resistivity ρ(T, H) measurements, together with T-dependent angle-resolved photoemission spectroscopy (ARPES) measurements complemented with first-principle calculations. EuAl 2 Ge 2 undergoes second-order A-type antiferromagnetic (AFM) ordering below T N = 27.5(5) K, with the Eu moments (Eu 2+ , S = 7/2) aligned ferromagnetically in the ab plane while these layers are stacked antiferromagnetically along the c axis. The critical fields at which all moments become parallel to the field are 37.5(5) and 52.5(5) kOe for H ∥ ab and H ∥ c, respectively. The H = 0 magnetic structure consists of trigonal AFM domains associated with ab-plane magnetic anisotropy and a field-induced reorientation of the Eu spins in the domains is also evident at T = 2 K below the critical field H c1 = 2.5(1) kOe. The ρ(T) measurements reveal metallic behavior transforming into a slight resistivity increase on cooling towards T N . A pronounced loss of spin-disorder scattering is observed below T N . The ARPES results show that EuAl 2 Ge 2 is metallic both above and below T N , and the Fermi surface is anisotropic with two hole pockets at the zone center and one small electron pocket at each M point. In the AFM phase, we directly observe folded bands in ARPES due to the doubling of the magnetic unit cell along the c axis with an enhancement of quasiparticle weight due to the complex change in the coupling between the magnetic moments and itinerant electrons on cooling below T N . The observed electronic structure is well reproduced by first-principle calculations, which also predict the presence of nontrivial electronic states near the Fermi level in the AFM phase with Z 2 topological numbers 1;(000)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2000

Freely Suspended Smectic Filaments and the Structure of the B7 Phase of MHOBOW

Our recent discovery of the spontaneous formation of chiral domains in fluid smectic phases of achiral bow-shaped molecules opens up a wide variety of possibilities for new liquid crystal phases and phenomena. The basic, spontaneously chiral layer structure of the highest temperature fluid smectic phases, the B2 and B7, are shown. One of the most intriguing aspects of this structure is the plethora of possible phases coming from different stacking sequences of the polar ordering and tilt directions. The four possibilities of next-nearest neighbor alternation are shown. In the original material studied, NOBOW, the ground states found are antiferroelectric, either the racemic SmC(sub S)P(sub A) or the chiral SmC(sub A)P(sub A). We are currently studying MHOBOW, synthesized by D. Walba which, by virtue of its methyl hexyloxy tail has a tendency to form anticlinic layer interfaces, in the hope of finding a phase with a ferroelectric ground state, either SmC(sub A)P(sub S) or SmC(sub S)P(sub A), which can be obtained in NOBOW only by applying a field. Preliminary observations of MHO-BOW have made its study, from the point of view of understanding novel LC structures, extremely high priority. The following truly remarkable characteristics have been revealed: (i) The smectic phase grows out of the isotropic in the form of helical ribbons. The resulting planar aligned textures of focal conics with layers normal to glass plates exhibit bizarre modulations, including stripes and checker-boards. These have also been seen in other materials suggesting that this is a new phase (tentatively called B7), which is a fluid smectic with some kind of in-layer structure. (ii) It is virtually impossible to make freely suspended films of MHOBOW. Rather it makes the freely suspended filaments which preliminary x-ray scattering experiments reveal to have the nested cylinder layer structure indicated; (iii) The powder x-ray diffraction exhibits four resolution-limited smectic layering peaks, very close in layer spacing, which vary continuously with T. This is further evidence for a more complex three dimensional structure than NOBOW, which has a typical single layering reflection. (iv) The x-ray structure factor of the layering peak of the filaments is extraordinarily complex and rich. Varying in qL (the scattering vector component along the filament axis) from a double slit-like pattern to modulated layer-like patterns, as qH (the scattering vector component normal to the filament axis) is varied over the range where the four powder peaks are located. These results suggest some kind of mosaic structure, perhaps with different layer spacings corresponding to the different stacking sequences. Recent x-ray diffraction experiments show that the peaks are modulated in intensity upon translation along a filament, in domains of several hundred microns dimension. These preliminary experiments suggest that the B7 is a fluid smectic with extremely unusual and fascinating structures. Of all of the many hundreds of fluid smectic materials we have attempted to study in the freely suspended film geometry over the years, only a few have failed to form films, and none showed any great tendency to form filaments, although this clearly should be a possible freely suspended smectic LC morphology. On several occasions in the past we have intentionally tried to make filaments from a variety of smectics without success. Thus the smectic filament formation property makes the B7 phase unique. It seems quite likely that the stability of filaments is related to the in-plane structure. The filaments exhibit other interesting structural and optical features. They are birefringent with a local optic axis which is oblique and which can vary continuously along filament and which can be manipulated with an electric field applied normal to the fiber, as if the field were causing a rotation of the optic axis about the fiber axis. Rapid displacement of the ends of the fiber toward one another causes a macroscopic helixing at low T and causes thick regions to transiently appear at high T, a 1D analog of island formation on a rapidly compressed film.

Clark, N.↗
DOE OSTI2025

Monocrystalline CdSeTe/MgCdTe Double‐Heterostructure Solar Cells

This article reports monocrystalline CdSeTe/MgCdTe double‐heterostructure (DH) solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy. The Se composition in the samples studied is determined to be 4%–11% through high‐resolution X‐ray diffraction (XRD) and photoluminescence measurements. Increased Se incorporation induces higher defect density attributed to increased lattice mismatch, and mixed‐phase formation due to the small difference in formation energies between the wurtzite and zinc blende phases of CdSe, which causes stacking faults and grain boundaries. Devices are fabricated by directly depositing an n‐type indium tin oxide (ITO) layer on the CdSeTe/MgCdTe DHs followed by Ag metal contacts. Reduced bandgap is observed in solar cells with increased Se composition. The devices with an absorber containing 4% Se exhibit an average open‐circuit voltage ( V OC ) of 0.925 V, a short‐circuit current density ( J SC ) of 23.4 mA/cm 2 , a fill factor ( FF ) of 0.650 and an efficiency of 14.1% without anti‐reflection coating. Absorbers with higher Se compositions result in poor device performance, mainly attributed to high defect density in the materials.

Ju, Zheng [Center for Photonics Innovation Arizona↗
NASA NTRSDate not supplied

A Compact Dual-Band Bowtie Antenna for RF and ISM bands Operation

Traditionally, bowtie antennas have been known to exhibit wide impedance characteristics, omnidirectional radiation patterns, and linear polarization. There is a broad range of applications from medical imaging, archaeological survey, and Ground Penetrating Radar (GPR) to trackers and sensor networks where wideband bowtie antenna designs are required for their operations. Broadening the bandwidth of bowtie antenna requires widening the flare angle of the bowtie arms, which consequently results in a large surface area that may not be suitable for space-constrained applications. Moreover, drawback attributes of the wideband bowtie designs feature inconsistent radiation pattern across the bandwidth and low signal-to-noise (SNR) ratios. As it is known, the SNR would be improved in dual- or multi-band antennas due to their reduced bandwidth. To this end, dual-band/multi-band antennas are preferred over wideband antennas in applications where more than a single frequency of interest is present. Previously, a two-port double-dipole elements was reported, whose arms were orthogonally interleaved to facilitate operation in both the standard WLAN frequency bands (J. M. Steyn and et. al, Progress in Electromagnetic Research, Vol. – 10 pp. 151-161). Even though the antenna is not very compact it does exhibit good cross-polarization, moderate gain in both frequency bands. Another dual-band bowtie antenna which excites two bands using a single transmission line was reported (Wen Chao Zheng and et. al, IEEE Trans. Antennas propag., 2014). The design was compact and did not need multi-port feeding network. In this paper, a dual-band compact bowtie antenna operating at 900 MHz (RF band) and 2.45 GHz (ISM band) using a single excitation port is introduced. It is printed on a 1.54mm thick dielectric substrate (εr = 3.38). The antenna consists of two sets of bowtie arms, a microstrip transmission line to feed the bowtie arms, and a ground plane acting as a reflector to partially reduce the back radiation. One of the bowtie arms of each frequency is printed on the top layer and the other arm, which is mirror imaged, is printed on the bottom layer of the substrate. The length of the bowtie controls the resonance frequency of the antenna and the flare angle controls the bandwidth of the antenna. The microstrip transmission line, connected to a 50 Ω SMA probe, feeds the bowtie antenna. The compact antenna can be used for both RF and ISM band applications. The bowtie arms at the lower frequency band are miniaturized by elongating their electrical lengths. The influence of miniaturizing the bowtie arms and the supporting partial ground plane is observed in the reduced peak gain and degraded front-to-back ratio. These are partly neutralized using four quarter-wave choke-slots in the ground plane with two on each side of the feeding transmission line. The proposed antenna is numerically investigated and finalized by the finite-element based full-wave EM solver, ANSYS HFSS. The miniaturization has reduced the ground plane size by ~45% and the arms size by ~41%. In addition to the size reduction benefits, the antenna shows reasonable peak gain and front-to-back ratio in both the bands. The corresponding results will be presented and discussed at the conference.

Saininad Naik↗
DOE OSTI2025

Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films

The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO 3 , as an end member of the PZT, (x)PbZr 1–x Ti x O 3 , solid solution, has been the subject of many studies. However, processing of perovskite PbZrO 3 is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization. Here, we discuss the challenges associated with Pb loss, as well as its compensation through bulk Pb overstoichiometry and interfacial PbO additions, in chemical solution processed, highly oriented PbZrO 3 thin films. For both 042 o - and 001 o -oriented (o-orthorhombic distortion) PbZrO 3 thin films, the crystallization interfaces are the most important contributors to Pb loss and off-stoichiometric outcomes, and no single approach was sufficient to address these challenges. Pb-rich and Pb-deficient nonperovskite phases including ZrO x were only observable through microscopic characterization, and X-ray diffraction alone could not rule out the presence of such secondary phases. “Ideal” macroscopic antiferroelectric polarization-electric field double hysteresis curves were observed despite (at times) the large presence of secondary phases. However, reduced saturation polarization and increased phase transition electric fields were observed concomitantly with the presence of secondary phase(s) and tentatively assigned to the voltage drop across the ZrO x nanocrystals. Based on these results, it is imperative that the presence of secondary phases always be addressed (beyond X-ray diffraction spectra) in order to correctly evaluate the properties of antiferroelectric films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Monocrystalline 1.7-eV MgCdTe solar cells

Monocrystalline 1.7-eV Mg 0.13 Cd 0.87 Te/Mg x Cd 1-x Te (x > 0.13) double-heterostructure (DH) solar cells with varying Mg composition in the barrier layers are grown by molecular beam epitaxy. Furthermore, a Mg 0.13 Cd 0.87 Te/Mg 0.37 Cd 0.63 Te DH solar cell featuring abrupt interfaces between barriers and absorber and the addition of a SiO 2 anti-reflective coating demonstrates open-circuit voltage (V OC ), short-circuit current density (J SC ), fill factor (FF), and device active-area efficiencies up to 1.129 V, 17.3 mA/cm 2 , 77.7% and 15.2%, respectively. The V OC and FF vary oppositely with the Mg x Cd 1-x Te barrier height indicating an optimal design of the MgCdTe DHs as a tradeoff between carrier confinement and carrier transport. Temperature-dependent V OC measurements reveal the majority of carrier recombination in the devices occurs outside the DHs, in the a-Si:H hole-contact layer and at the interface between the a-Si:H layer and the Mg x Cd 1-x Te top barrier at room temperature. Simulation results for the device with the highest efficiency show that the p-type a-Si:H layer and Mg 0.37 Cd 0.63 Te top barrier contribute 1.3 mA/cm 2 and 2.4 mA/cm 2 J SC loss, respectively.

14 SOLAR ENERGY↗
DOE OSTI2025

How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells

Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.

14 SOLAR ENERGY↗
DOE OSTI2024

Sputter-Coated TiO 2 Films as Passivation and Hole Transfer Layers for Improved Energy Conversion with Solar Fuel WO 3 /CuWO 4 Photoanodes

Atomic layer deposited (ALD) “leaky” TiO 2 have gained interest as charge-selective protection layers for semiconductor solar fuel electrodes. Here we demonstrate the use of sputter-deposited TiO 2 layers as hole selective contacts for WO 3 /CuWO 4 type 2 heterojunction water oxidation photoanodes for the first time. TiO 2 protection layers with varying thicknesses (2 to 128 nm) were deposited using the RF magnetron sputtering technique. The resulting TiO 2 films are amorphous based on Raman spectroscopy and powder XRD. Photoelectrochemical scans and Vibrating Kelvin probe photovoltage spectroscopy show that 2-8 nm TiO 2 layers nearly double the photocurrent to 0.97 mA cm -2 under AM 1.5 illumination (19% AQE at 350 nm), increase the surface photovoltage signal by 25%, and increase the WO 3 /CuWO 4 bandgap. These effects can be attributed to the selectivity of TiO 2 for photoholes. Additionally, SPV data suggest that TiO 2 overlayers suppress copper-based surface recombination defects. Reduced photocurrent and the photovoltage are seen in thicker TiO 2 films (16 to 128 nm) as a result of an increasing hole transfer resistance and because of light shading effects according to photoaction spectra. The TiO 2 films also improve the stability of the WO 3 /CuWO 4 photoelectrodes, allowing nearly constant O 2 evolution over 3 hours after an initial 20-35% loss. Overall, this work establishes RF magnetron sputtering as a useful method to install amorphous TiO 2 passivation layers for improved WO 3 /CuWO 4 solar fuel photoelectrodes. Furthermore, we show how the combination of PEC with SPV measurements provides insight into the function of the TiO 2 coatings.

CuWO4↗