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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Collision of cometlike and slightly differentiated bodies as an origin for ordinary chondrites

One of the keys to understanding the origins of chondrites is given by the characteristics of relict minerals in chondrules that survived chondrule formation. Some of the relic materials show shock deformation textures, such as high dislocation densities in relict olivine and stacking faults in relict pyroxene. The textures suggest that shock deformation was the cause of melting of the chondrules. Some of the olivine and pyroxene fragments in the matrix of the chondrites have been shown to have a composition closer to the relict minerals than minerals crystallized during the chondrule formation. This suggests that some of the fragments originated from the precursor materials of the chondrules. A proposed origin for chondrites is discussed here along with supporting observations and conclusions.

Kitamura, M.↗
NASA NTRS1995

Temperature Dependent Cyclic Deformation Mechanisms in Haynes 188 Superalloy

The cyclic deformation behavior of a wrought cobalt-base superalloy, Haynes 188, has been investigated over a range of temperatures between 25 and 1000 C under isothermal and in-phase thermomechanical fatigue (TMF) conditions. Constant mechanical strain rates (epsilon-dot) of 10(exp -3)/s and 10(exp -4)/s were examined with a fully reversed strain range of 0.8%. Particular attention was given to the effects of dynamic strain aging (DSA) on the stress-strain response and low cycle fatigue life. A correlation between cyclic deformation behavior and microstructural substructure was made through detailed transmission electron microscopy. Although DSA was found to occur over a wide temperature range between approximately 300 and 750 C the microstructural characteristics and the deformation mechanisms responsible for DSA varied considerably and were dependent upon temperature. In general, the operation of DSA processes led to a maximum of the cyclic stress amplitude at 650 C and was accompanied by pronounced planar slip, relatively high dislocation density, and the generation of stacking faults. DSA was evidenced through a combination of phenomena, including serrated yielding, an inverse dependence of the maximum cyclic hardening with epsilon-dot, and an instantaneous inverse epsilon-dot sensitivity verified by specialized epsilon-dot -change tests. The TMF cyclic hardening behavior of the alloy appeared to be dictated by the substructural changes occuring at the maximum temperature in the TMF cycle.

Rao, K. Bhanu Sankara↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
NASA NTRS2006

Strip Yield Model Numerical Application to Different Geometries and Loading Conditions

A new numerical method based on the strip-yield analysis approach was developed for calculating the Crack Tip Opening Displacement (CTOD). This approach can be applied for different crack configurations having infinite and finite geometries, and arbitrary applied loading conditions. The new technique adapts the boundary element / dislocation density method to obtain crack-face opening displacements at any point on a crack, and succeeds by obtaining requisite values as a series of definite integrals, the functional parts of each being evaluated exactly in a closed form.

Hatamleh, Omar↗
NASA NTRS2007

Numerical Strip-Yield Calculation of CTOD and CTOA

A recently developed numerical method based on the strip yield analysis approach was used to calculate the Crack Tip Opening Displacement (CTOD) and Crack Tip Opening Angle (CTOA) for a number of complex crack configurations of practical interest. This method is an adaptation of the dislocation-density based boundary element method. In this Boundary Element approach, crack-face opening displacements are obtained at any point on a crack using a series of definite integrals evaluated exactly in closed form for a variety of crack geometries, including infinite or finite extent, with arbitrarily applied loading conditions.

Beek, Joachim↗
NASA NTRS2013

Low Temperature Creep of Hot-Extruded Near-Stoichiometric NiTi Shape Memory Alloy: Effect of Thermal Cycling - Part 2

This paper is the first report on the effect prior low temperature creep on the thermal cycling behavior of NiTi. The isothermal low temperature creep behavior of near-stoichiometric NiTi between 300 and 473 K was discussed in Part I. The effect of temperature cycling on its creep behavior is reported in the present paper (Part II). Temperature cycling tests were conducted between either 300 or 373 K and 473 K under a constant applied stress of either 250 or 350 MPa with hold times lasting at each temperature varying between 300 and 700 h. Each specimen was pre-crept either at 300 or at 473 K for several months under an identical applied stress as that used in the subsequent thermal cycling tests. Irrespective of the initial pre-crept microstructures, the specimens exhibited a considerable increase in strain with each thermal cycle so that the total strain continued to build-up to 15 to 20 percent after only 5 cycles. Creep strains were immeasurably small during the hold periods. It is demonstrated that the strains in the austenite and martensite are linearly correlated. Interestingly, the differential irrecoverable strain, in the material measured in either phase decreases with increasing number of cycles, similar to the well-known Manson-Coffin relation in low cycle fatigue. Both phases are shown to undergo strain hardening due to the development of residual stresses. Plots of true creep rate against absolute temperature showed distinct peaks and valleys during the cool-down and heat-up portions of the thermal cycles, respectively. Transformation temperatures determined from the creep data revealed that the austenitic start and finish temperatures were more sensitive to the pre-crept martensitic phase than to the pre-crept austenitic phase. The results are discussed in terms of a phenomenological model, where it is suggested that thermal cycling between the austenitic and martensitic phase temperatures or vice versa results in the deformation of the austenite and a corresponding development of a back stress due to a significant increase in the dislocation density during thermal cycling.

Raj, S. V.↗
NASA NTRS2004

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

The off-axis approach to SiC epitaxial growth has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This paper reviews recent advancements in SiC epitaxial growth that begin to overcome the above shortcomings for arrays of device-sized mesas patterned into on-axis 4H/6HSiC wafers. These on-axis mesa growth techniques have produced 4H/6H-SiC homoepilayers and 3C-SiC heteroepilayers with substantially lower dislocation densities. The results should enable improved homojunction and heterojunction silicon carbide prototype devices.

Neudeck, P. G.↗
NASA NTRS2018

Characterization of Titanium Alloys Produced by Electron Beam Directed Energy Deposition

Functionally graded materials offer the potential to improve structural efficiency by allowing the material composition and/or microstructural features to spatially vary within a component. Additive manufacturing techniques enable the fabrication of such graded materials and structures. While examining several titanium alloys, this paper focuses on Ti-8Al-1Er as it has a unique microstructure that is only feasible when produced by rapid solidification methods like electron beam directed energy deposition, an additive manufacturing process. The results show that, when mixed, Ti-8Al-1Er and commercially-pure titanium uniformly mix at various ratios and the resultant static tensile properties of the mixed alloys behave according to rule-of-mixtures. At discontinuous interfaces between Ti-8Al-1Er and commercially-pure titanium, the crack growth behavior progresses smoothly across the discontinuity as the crack transitions from one crack growth regime into another. Studies on monolithic samples shows the mechanisms of damage in the Ti-8Al-1Er; specifically, that strain localization occurs near grain boundaries of high mis-orientation on the microscale and that twinning and dislocation density is concentrated near erbia-strengthening particles (Er2O3) on the nanoscale.

Newman, John A.↗
NASA NTRS2019

The Effect of Redox Conditions on Seismic Waves in Iron-Bearing Olivine: Implications for Understanding Planetary Interiros Through Seismilogy

Seismic data, inclusive of velocities and attenuation, can be utilized to elucidate the physical state of planetary interiors]. However, numerous micromechanical factors have been either experimentally demonstrated, or theoretically considered, to affect the propagation and dissipation of seismic energy within crystalline solids - including, but not limited to, changes in grain size, temperature, melt fraction, pressure and dislocation density. Thus, observed variations in seismic wave speeds and attenuation may be used to ultimately ‘map’ variations in physical properties, such as those listed above, within planetary bodies. But, in order to complete a successful inversion of seismic data into representations of physical properties, a first requirement is to obtain a fundamental laboratory based understanding of how each of these possible factors individually influences seismic waves. Here we conduct an experimental study with the initial objective to further understand one of the most commonly invoked, yet least studied, mechanisms that could alter intrinsic seismic wave attenuation: water content (occurring as chemically-bound hydroxyl). The historical basis for determining the effect of water on seismic properties was established predominantly through analogy with large-strain creep experiments conducted on olivine under water-saturated conditions. While these deformation experiments routinely demonstrate a weakening of olivine in the presence of water, they represent a fundamentally different deformation regime in comparison to the microstrains experienced due to a passing seismic wave. Thus, in order to directly assess the effects of water on seismic properties, small-strain experiments are required. Substantially modified seismic properties in the presence of water have been observed previously at low strains and low frequencies, but only in a single exploratory study conducted under water-saturated conditions. Thus, to properly test the theoretical predictions we conducted a systematic study of the seismic properties of olivine using low-frequency torsional oscillation on aggregates containing varying concentrations of bound hydroxyl, for the first time at under saturated conditions.

Cline, C. J., II↗
NASA NTRS2019

Vapor Growth of Indium Monoiodide

Indium (I) iodide, InI, is part of a group of heavy metal iodides that can be used as room temperature radiation detectors. Other examples are HgI2, PbI2, BiI3, or TlPbI3. InI has several advantages, such as low toxicity, no solid phase transition (such as in HgI2), and no tendency to form polytypes (PbI2, BiI3 ). All binary iodides have layered structures and are quite soft, but InI is also the mechanically most stable compound of the binary compounds. Table 1 shows the main properties of InI in comparison with the other iodides and the most common room temperature radiation detector material, (Cd, Zn)Te. InI is typically grown by the unseeded Bridgman method using a nucleation tip, but Czochralski (CZ) growth has also been demonstrated. The resulting crystals have been used successfully for radiation detection, but both resistivity and mobility are usually well below theoretically predicted values. Physical vapor transport (PVT), although much slower than melt growth, is an alternative method and has been used to grow e.g. HgI2, PbI2, BiI3, CdTe. PVT growth should eliminate or reduce inclusions and impurities since it is based on sublimation, reduce intrinsic defects due to the lower growth temperature, and reduce dislocation densities due to reduced thermal and mechanical stress. As an example, PVT-grown CdTe showed a much improved structural quality compared to Bridgman- or THM-grown material.

Cröll, Arne↗
NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗
NASA NTRSDate not supplied

Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells

We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.

Ryan D Hool↗
DOE OSTI2021

High-efficiency transmission-mode diamond scintillator for quantitative characterization of X-ray beams

The luminance of a transmission mode X-ray scintillator diamond plate is dominated by induced defect centers having an excited state lifetime less than 10 msec, and in embodiments less than 1 msec, 100 usec, 10 used, 1 used, 100 nsec, or even 50 nsec, thereby providing enhanced X-ray luminance response and an X-ray flux dynamic range that is linear with X-ray flux on a log-log scale over at least three orders of magnitude. The diamond plate can be a single crystal having a dislocation density of less than 104 per square centimeter, and having surfaces that are ion milled instead of mechanically polished. The defect centers can be SiV centers induced by silicon doping during CVD diamond formation, and/or NV0 centers formed by nitrogen doping followed by applying electron beam irradiation of the diamond plate and annealing.

Antipov, Sergey↗
DOE OSTI2020

Understanding the deformation mechanisms in Ni-based superalloys with using crystal plasticity finite element method

Nl-based superalloy is considered as a good candidate due to its excellent resistance to elevated temperature deformation for long term period application. Understanding the deformation and failure mechanisms of Ni-Based superalloys is very helpful for providing design guidelines for processing Ni-based superalloys. Experimental characterization indicates that the deformation mechanisms of Ni based superalloy is strongly microstructure dependent. Besides, damage transform from the void nucleation to the macro cracks by voids growth leading to the failure of the Ni-based superalloys are also showing strong microstructure sensitivity. Therefore, this work focuses on the prediction and comprehension of the deformation and void growth behavior in Ni based superalloy at different working conditions via crystal plasticity finite element modeling and simulation. Physically based crystal plasticity frameworks were developed for newly Ni- based superalloy Haynes 282. It was found that dislocation shearing through the precipitates were acting as the main contributor to the strength of Haynes 282 at room temperature and 815°C. Our analysis of the creeping behavior of Haynes 282 exhibited that resistance of general climb replaced by the resistance induced by the deposited climb dislocation density. In addition, in the study of void growth behavior, our simulation results demonstrated that as the main loading axis perpendicular to the grain boundary (GB), voids grow more slowly on tilt GBs in bicrystals than those in single and bicrystals with twist GBs. And tilt GBs would promote the void grow into irregular shape.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Fundamentals of Defect-Free III-V Growth on Oxide-Nanopatterned GaAs Substrates

This talk describes the fundamentals underlying defect-free growth of large-area III-V devices on oxide-nanopatterned GaAs substrates, and applies them to the growth of 24.8% efficient GaAs solar cells with a dislocation density less than 5 x 10^5 cm^-2. In this application the nanopatterned oxide layer serves as a mechanically-weak layer for substrate separation and reuse, but in other applications it could serve as an optical element to diffract or redirect light. This presentation focuses on how the topology and dimensions of the oxide mask must be controlled to avoid defect formation wherever the epilayer coalesces over a mask feature.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2023

High Efficiency Multijunction Devices: Solar Cells, Thermophotovoltaics, LEDs

High-efficiency III-V multijunction solar cells require multiple alloys with optimal bandgaps and excellent material quality. However, many useful alloys are lattice-mismatched to available substrates, and require strain-engineering tricks to enable efficient use. To this extent, we have developed low-dislocation density metamorphic material and optically-thick stress-balanced superlattices, enabling access to a wide variety of III-V alloys. Combined with transparent tunnel junctions, these components allow optimizing multijunction devices for a variety of applications. We have designed multijunction cells for the G173G-terrestrial and AM0-space spectra with record 39.5% and 34.2% efficiency, respectively, and also thermophotovoltaic cells for blackbody spectra that reach over 40% TPV-efficiency. Finally, using these PV components, we demonstrate a multijunction LED with high quantum efficiency.

high-efficiency↗