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Saturation of molecular transitions using a tuneable diode laser was demonstrated for the first time using a standing-wave cavity configuration with an f/8 beam focussed at the sample. Observed saturation effects in NH3 transitions near 888/cm include sub-Doppler (Lamb-dip) resonances at line center.
Nonuniform structures of phase-locked diode lasers, which make it possible to discriminate efficiently against all the higher order array supermodes (lateral modes) are proposed. In these nonuniform arrays, the effective mode index in each channel varies across the array. Consequently, the envelopes of the various supermodes, including the highest order one, differ significantly from each other. Thus, by proper tailoring of the gain distribution across the array, one can conveniently select the fundamental supermode. Such fundamental supermode oscillation is essential in order to obtain single lobe, diffraction limited beams and minimal spectal spread from phase-locked laser arrays.
A conditioning circuit is provided with a constant current diode in series with a zener diode, the former having a high dynamic impedance and the latter a low dynamic impedance. The constant current diode can receive an input voltage with PARD. In conjunction with the zener diode fixed to a ground, a voltage divider is provided which can give an output voltage whose PARD was significantly reduced. The conditioning circuit is effective down to dc.
Backward stimulated Brillouin scattering (SBS) has been experimentally studied in midinfrared transparent AgCl and KRS-5 fibers. In the present scheme, pump transmission through the fibers and acoustooptic radiative effects are simultaneously observed. The SBS shifted scattered light spectrum is investigated by laser heterodyne spectroscopy using HgCdTe and very fast metal-oxide-metal diode broadband mixers. The results suggest that reflection under high incident laser power departs from simple Fresnel surface reflection.
Nextreme Thermal Solutions Inc., based in Research Triangle Park, North Carolina, licensed thermoelectric technology from NASA s Jet Propulsion Laboratory. This has allowed the company to develop cutting edge, thin-film thermoelectric coolers that effective remove heat generated by increasingly powerful and tightly packed microchip components. These solid-state coolers are ideal solutions for applications like microprocessors, laser diodes, LEDs, and even potentially for cooling the human body. Nextreme s NASA technology has also enabled the invention of thermoelectric generators capable of powering technologies like medical implants and wireless sensor networks.
The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.
For a variety of applications, it is important to measure the sensitivity of the pointing of a beam emerging from a collimator, as a function of temperature changes. A straightforward method for carrying out this measurement is based on using interferometry for monitoring the changes in beam pointing, which presents its own problems. The added temperature dependence and complexity issues relating to using an interferometer are addressed by not using an interferometer in the first place. Instead, the collimator is made part of an arrangement that uses a minimum number of low-cost, off-the-shelf materials and by using a quad diode to measure changes in beam pointing. In order to minimize the influence of the test arrangement on the outcome of the measurement, several steps are taken. The collimator assembly is placed on top of a vertical, 1-m-long, fused silica tube. The quad diode is bonded to a fused silica bar, which, in turn, is bonded to the lower end of the fused silica tube. The lower end of the tube rests on a self-aligning support piece, while the upper end of the tube is kept against two rounded setscrew tips, using a soft rubber string. This ensures that very little stress is applied to the tube as the support structure changes dimensions due to thermal expansion. Light is delivered to the collimator through a bare fiber in order to minimize variable bending torque caused by a randomly relaxing, rigid fiber jacket. In order to separate the effect of temperature on the collimator assembly from the effect temperature has on the rest of the setup, multiple measurements are taken with the collimator assembly rotated from measurement to measurement. Laboratory testing, with 1-m spacing between the collimator and the quad diode, has shown that the sensitivity of the arrangement is better than 100 nm rms, over time spans of at least one hour, if the beam path is protected from atmospheric turbulence by a tube. The equivalent sensitivity to detecting changes in pointing angle is 100 nanoradians.
A mass spectrometric system for determining the characteristics of materials used in instrumental development and aerospace applications was developed. The desorption spectra of cesium that was ion-implanted into polycrystalline tungsten and the effects on the spectra of bombardment of the tungsten by low energy (70 eV) electrons were investigated. Work function changes were measured by the retarding potential diode method. Flash desorption characteristics were observed and gas-reaction mechanisms of the surface of heated metal filaments were studied. Desorption spectra were measured by linearly increasing the sample temperature at a selected rate, the temperature cycling being generated from a ramp-driven dc power supply, with the mass spectrometer tuned to a mass number of interest. Results of the study indicate an anomolous desorption mechanism following an electron bombardment of the sample surface. The enhanced spectra are a function of the post-bombardment time and energy and are suggestive of an increased concentration of cesium atoms, up to 10 or more angstroms below the surface.
Saturation of molecular transitions using a tunable diode laser has been demonstrated for the first time using a standing-wave-cavity configuration with the laser beam focused at the sample. Observed saturation effects in NH3 transitions near 888 kaysers include sub-Doppler (Lamb-dip) resonances at the line center.
A flash-lamp-pumped slab Nd:YAG laser amplifier with 62 dB of gain is demonstrated. The amplifier remains linear for energy extraction up to 12 mJ, and the beam spatial quality remains good at repetition rates up to 10 Hz. The slab geometry provides for gain averaging in the zigzag dimension, thus eliminating the undesirable effects of nonuniform pumping. This averaging and the necessity for only a single compact gain element are valuable attributes that may allow for eventual laser-diode array pumping of the slab Nd:YAG amplifier.
We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.
The Portable Unit for Metabolic Analysis (PUMA) is an instrument that measures several quantities indicative of human metabolic function. Specifically, this instrument makes time-resolved measurements of temperature, pressure, flow, and the partial pressures of oxygen and carbon dioxide in breath during both inhalation and exhalation. Portable instruments for measuring these quantities have been commercially available, but the response times of those instruments are too long to enable temporal resolution of phenomena on the time scales of human respiration cycles. In contrast, the response time of the PUMA is significantly shorter than characteristic times of human respiration phenomena, making it possible to analyze varying metabolic parameters, not only on sequential breath cycles but also at successive phases of inhalation and exhalation within the same breath cycle. In operation, the PUMA is positioned to sample breath near the subject s mouth. Commercial off-the-shelf sensors are used for three of the measurements: a miniature pressure transducer for pressure, a thermistor for temperature, and an ultrasonic sensor for flow. Sensors developed at Glenn Research Center are used for measuring the partial pressures of oxygen and carbon dioxide: The carbon dioxide sensor exploits the relatively strong absorption of infrared light by carbon dioxide. Light from an infrared source passes through the stream of inhaled or exhaled gas and is focused on an infrared- sensitive photodetector. The oxygen sensor exploits the effect of oxygen in quenching the fluorescence of ruthenium-doped organic molecules in a dye on the tip of an optical fiber. A blue laser diode is used to excite the fluorescence, and the optical fiber carries the fluorescent light to a photodiode, the temporal variation of the output of which bears a known relationship with the rate of quenching of fluorescence and, hence, with the partial pressure of oxygen. The outputs of the sensors are digitized, preprocessed by a small onboard computer, and then sent wirelessly to a desktop computer, where the collected data are analyzed and displayed. In addition to the raw data on temperature, pressure, flow, and mole fractions of oxygen and carbon dioxide, the display can include volumetric oxygen consumption, volumetric carbon dioxide production, respiratory equivalent ratio, and volumetric flow rate of exhaled gas.
X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.
A practical method of applying a parylene (paraxylene) coating to hybrid microcircuit devices was developed for the prevention of circuit malfunctions existing prior to package sealing or formed upon exposure to the service environment. It was found that paralene and an associated primer (if used) had generally little or no adverse effect on the active and passive elements of typical hybrid microcircuits. Exceptions were related to high frequency circuitry, low resistivity thick film resistors, and highly sensitive PIN diodes. Advantages of the use of the coating included increased dielectric strength and increased interconnection bond strength. Coating service life in nitrogen or nitrogen with low levels of oxygen as a contaminant is shown to be in excess of 1000 hours at 150 C and can be projected to be in excess of 5000 hours at 125 C.
An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.
The high resolution laboratory absorption spectrum of the 12 micro band of ethane gas is studied. The data were obtained using the McMath Solar Telescope 1 meter Fourier Transform interferometer at Kitt Peak National Observatory and tunable diode laser spectrometers at the University of Tennessee and NASA/Goddard Space Flight Center. Over 200 individual vibration rotation transitions were analyzed taking into account many higher order effects including torsional splitting. Line positions were reproduced to better than 0.001/cm. Both ground and upper state molecular constants were determined in the analysis. The experimental details, the analysis procedures and the results are addressed. A list of ethane transitions occurring near (14)CO2 laser lines needed for heterodyne searches for C2H6 in extraterrestrial sources is also included. A spectral catalog of the ethane nu sub g fundamental from 765/cm to 900/cm is provided. A high dispersion (1/cm 12 in.) plot of both the Kitt Peak interferometric data and a simulated spectrum with Doppler limited resolution, a table of over 8500 calculated transitions listed quantum number assignments, frequencies and intensities are provided.
The design concepts, analyses, and development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of space-borne communications systems are summarized. The design approach uses a compact lumped element quadrature hybrid and Metal Semiconductor Field Effect Transistors (MESFET)-varactors to provide low loss and well-controlled phase performance for deep space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters were modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/- 2.5 radians of peak phase deviation. The modulator will accommodate downlink signal modulation with composite telemetry and ranging data, with a deviation linearity tolerance of +/- 8 percent and insertion loss of less than 8 +/- 0.5 dB. The MMIC digital modulator is designed to provide greater than 10 Mb/s of bi-phase modulation at X-band.
Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.