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At least 361 records · Page 20

Magnetic Field Sensing via Optically Detected Magnetic Resonance and Spin Relaxometry Using Nitrogen Vacancies in Nanodiamonds

Quantum sensing is broadly defined as the use of quantum materials, quantum coherence, and/or quantum entanglement to measure physical quantities and/or to enhance the sensitivity of classical analytical measurements. Certain materials exhibit interesting quantum properties that have the potential to be utilized in quantum sensing applications. One such quantum property is electronic spin, which is utilized in this work. Here, we built a custom apparatus capable of conducting both optically detected magnetic resonance (ODMR) and spin relaxometry. The quantum material investigated was an ensemble of nitrogen vacancies (NV) in nanodiamonds. We have characterized the system and measured ODMR spectra for different strengths of the applied DC magnetic field and clearly observed the expected splitting of the resonances due to Zeeman splitting. We also have measured the spin relaxation times for two different powers of the applied AC magnetic field. The lower power dataset exhibited expected exponential temporal dependence of the relaxation of a modified spin state, whereas the higher power dataset exhibited stretched exponential dependence of the modified spin state, indicating the presence of high-power phenomena that emerge that retard the relaxation of the spin state.

Lander, Gary↗

Probing the Impact of Vacancy Diffusion on Void Dynamics at the Lithium Metal–Solid Electrolyte Interface

Lithium (Li) metal-based solid-state batteries (SSBs) are considered promising candidates for next-generation energy storage due to their superior energy density and enhanced safety compared to conventional Li-ion systems. However, their practical application is limited by challenges such as void formation at the Li-solid electrolyte (SE) interface, which disrupts ion transport and accelerates interfacial degradation. This work investigates how the coupled effects of electro-dissolution kinetics and surface diffusion at the Li metal surface govern the evolution of interfacial morphology during stripping. This work examines the influence of three distinct surface diffusion modes, which are terrace diffusion, step diffusion, and interlayer diffusion, on maintaining interfacial stability. In addition, how the dominant surface diffusion mechanism can overcome the contact loss due to high reaction kinetics is explored. Furthermore, the roughness of the Li metal anode surface is quantified, and the influence of different diffusion mechanisms on the evolution of the dynamic solid–solid interface is examined. The critical role of temperature in enhancing Li surface diffusivity and expanding the regime of stable contact is highlighted. By identifying distinct regimes of interface stability, this study analyzes how non-uniform electrochemical dynamics dictate void morphology evolution and interfacial contact. These insights offer guiding principles for engineering robust Li–SE interfaces in SSBs.

lithium metal anode↗

Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies

Modulating Cu + ion disorder in Cu 2 Se can enable control over the polymorphism and the carrier density leading to enhanced thermoelectric properties for both α- and β-Cu 2 Se. Here we report that the incorporation of Cr 3+ into the Cu 2 Se crystal lattice facilitates the stabilization of α-Cu 2 Se at 300 K leading to a large (~140%) reduction in the carrier density both below and above the phase transition. This is attributed to the reduction in the density of intrinsic copper interstitials (Cu$^{•}_{i}$) within the Cu (2-δ-λ) (Cr$^{··}_{Cu}$)λ(V$^{'}_{Cu}$)δ(Cu$^{π}_{i}$) δ-2λ (h • ) δ-2λ Se crystal lattice. Such optimization of the carrier density led to a large (63%) increase in the thermopower and a drastic (46%) reduction in the total thermal conductivity for both α- and β-Cu 2 Se matrices. Consequently, a significant enhancement of the thermoelectric performance is observed in the entire temperature range from 300 K to 773 K. This results in high average ZT values for both α-Cu 2 Se (ZT ave = 0.60) and β-Cu 2 Se (ZT ave = 0.97), which paves the way for both near room temperature and high temperatures applications. Furthermore, this work provides a new approach to optimize the thermoelectric performance of Cu 2 Se-based materials by leveraging the interaction between mobile intrinsic Cu$^{·}_{i}$ and extrinsic V$^{'}_{Cu}$ to suppress the hole density.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A coupled vacancy diffusion-dislocation dynamics model for the climb-glide motion of jogged screw dislocations

Here, we develop a novel model to study the climb/glide motion of jogged screw dislocations within the discrete dislocation dynamics (DDD) framework. We present results for the dependence of the climb velocity on the applied stress and on the jog size and distribution statistics. We show that the model predictions are consistent with experimental data in both γ-TiAl and Zircaloy-4. The ranges of the applied stress and jog spacing that determine the dominance of one of three dislocation mechanisms are identified. These are the jog dragging, dipole dragging, and dipole bypass mechanisms, respectively. The overall dislocation motion in the jog dragging regime is composed of glide of screw segments and climb of jogs, controlling the plastic strain and the creep rate, respectively. Based on current simulations and on a detailed examination of the predicted jog heights compared to experiments, we advance the hypothesis that a combination of jog dragging and dipole bypass mechanisms is necessary to reproduce the high creep rate observed in some experiments.

36 MATERIALS SCIENCE↗