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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterizing structural features of two-dimensional particle systems through Voronoi topology

This paper introduces a new approach toward characterizing local structural features of two-dimensional particle systems. The approach can accurately identify and characterize defects in high-temperature crystals, distinguish a wide range of nominally disordered systems, and robustly describe complex structures such as grain boundaries. This paper also introduces two-dimensional functionality into the open-source software program VoroTop which automates this analysis. This software package is built on a recently-introduced multithreaded version of V ORO ++, enabling the analysis of systems with billions of particles on high-performance computer architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO 3 ) 9 /(LuFe 2 O 4 ) 1 superlattices, mapping correlations between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10 14 cm -2 , congruent with the formula-unit-thick ferrimagnetic LuFe 2 O 4 layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO 3 and LuFe 2 O 4 layers, respectively. The results demonstrate pronounced interactions between oxygen vacancies and the multiferroic order in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nature of native atomic defects in ZrTe 5 and their impact on the low-energy electronic structure

Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe 5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe 5 samples, especially given the very small density of states near its chemical potential. In this work, we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe 5 , namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. Finally, the understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Riemann-Hilbert correspondence and blown up surface defects

The relationship of two dimensional quantum field theory and isomonodromic deformations of Fuchsian systems has a long history. Recently four-dimensional N = 2 gauge theories joined the party in a multitude of roles. In this paper we study the vacuum expectation values of intersecting half-BPS surface defects in SU(2) theory with N f = 4 fundamental hypermultiplets. We show they form a horizontal section of a Fuchsian system on a sphere with 5 regular singularities, calculate the monodromy, and define the associated isomonodromic tau-function. Using the blowup formula in the presence of half-BPS surface defects, initiated in the companion paper, we obtain the GIL formula, establishing an unexpected relation of the topological string/free fermion regime of supersymmetric gauge theory to classical integrability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Semi-adsorption-controlled growth window for half-Heusler FeVSb epitaxial films

The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition XYZ or X 2 YZ) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a semi-adsorption-controlled growth window for semiconducting half-Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Here, the highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb vacancies may be a common defect. Similar semi-adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species Z = {Sb, As, Bi}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V (X/Y) transition metal stoichiometry.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Characterization and classification of interacting ( 2 + 1 )-dimensional topological crystalline insulators with orientation-preserving wallpaper groups

While free fermion topological crystalline insulators have been largely classified, the analogous problem in the strongly interacting case has been only partially solved. In this work, we develop a characterization and classification of interacting, invertible fermionic topological phases in (2+1) dimensions with charge conservation, discrete magnetic translation and M-fold point group rotation symmetries, which form the group G f = U(1) f × Φ [Z 2 $\rtimes$Z M ] for M = 1,2,3,4, and 6. Φ is the magnetic flux per unit cell. We derive a topological response theory in terms of background crystalline gauge fields, which gives a complete classification of different phases and a physical characterization in terms of quantized response to symmetry defects. We then derive the same classification in terms of a set of real space invariants {$Θ^±_o$} that can be obtained from ground state expectation values of suitable partial rotation operators. We explicitly relate these real space invariants to the quantized coefficients in the topological response theory, and find the dependence of the invariants on the chiral central charge c – of the invertible phase. Finally, when Φ = 0 we derive an explicit map between the free and interacting classifications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Robust three-dimensional type-II Dirac semimetal state in SrAgBi

Topological semimetals such as Dirac, Weyl or nodal line semimetals are widely studied for their peculiar properties including high Fermi velocities, small effective masses and high magnetoresistance. When the Dirac cone is tilted, exotic phenomena could emerge whereas materials hosting such states are promising for photonics and plasmonics applications. Here we present evidence that SrAgBi is a spin-orbit coupling-induced type-II three-dimensional Dirac semimetal featuring tilted Dirac cone at the Fermi energy. Near charge compensation and Fermi surface characteristics are not much perturbed by 7% of vacancy defects on the Ag atomic site, suggesting that SrAgBi could be a material of interest for observation of robust optical and spintronic topological quantum phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Defects in Semiconductors

All semiconductors, whether by design or by accident, contain defects. The fundamental properties of defects, such as impurities, native defects, and extended defects, affect a broad range of applications. These technologically important defects may be introduced during growth and processing. Electrical, optical, and magnetic phenomena related to defects have been observed experimentally and studied theoretically in a variety of materials. In addition to traditional semiconductors (elemental, III–V, and II–VI), emerging materials include organic semiconductors, nitrides, oxides, and topological insulators, in bulk crystal and thin-film forms as well as low-dimensional and nanoscale structures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Topological magnons on the ferromagnetic zigzag lattice

Motivated by the experimental identification of magnetic compounds consisting of zigzag chains, we analyze the band structure topology of magnons in ferromagnets on a zigzag lattice. We account for the general lattice geometry by including spatially anisotropic Heisenberg exchange interactions and by Dzyaloshinskii-Moriya interaction on inversion asymmetric bonds. Within the linear spin-wave theory, we find two magnon branches, whose band structure topology (i.e., Chern numbers) we map out in a comprehensive phase diagram. Notably, besides topologically trivial and gapless phases, we identify topologically nontrivial phases that support chiral edge magnons. We show that these edge states are robust against elastic defect scattering.

Subramanian, Skandan [ORNL] (ORCID:000900087255487↗
DOE OSTI2025

Identifying and classifying localized states in gapless systems using pseudospectral methods

For decades, band theory has been used to understand the physical properties of crystals by leveraging these systems’ translational symmetries to determine the spectral range and distribution of their Bloch eigenstates. However, many important phenomena only manifest at a crystal’s defects or boundaries where this translational symmetry is broken, such as defect-localized states that appear at color centers, or boundary-localized states whose existence is guaranteed by topology. Although it is possible to extend band theoretic approaches to study these classes of states, these extensions are only applicable in gapped systems, where any localized states are spectrally isolated from the crystal’s bulk states.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Thin-film TaAs: Developing a platform for Weyl semimetal devices

MX monopnictide compounds (M = Nb,Ta, X = As,P) are prototypical 3D Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin-film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single-phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure using angle-resolved photoemission spectroscopy, kelvin probe force microscopy, and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Manipulating topological properties in Bi 2 Se 3 / BiSe /transition metal dichalcogenide heterostructures with interface charge transfer

Heterostructures of topological insulator Bi 2 Se 3 on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. Here, the diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi 2 Se 3 /NbSe 2 heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi 2 Se3/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe 2 , MoSe 2 , TiSe 2 , and 2H phase NbSe 2 , MoSe 2 ). We find significant charge transfer at both BiSe/TMDC and Bi 2 Se 3 /BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi 2 Se 3 layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi 2 Se 3 quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk

Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic and structural state. In most semiconductors interstitial hydrogen binds to defects and is known to be amphoteric, namely it can act either as a donor (H + ) or an acceptor (H - ) of charge, nearly always counteracting the prevailing conductivity type. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets — the control of intrinsic bulk conduction that denies access to quantum surface transport, imposing severe thickness limits on the bulk. With electrons donated by a reversible binding of H + ions to Te(Se) chalcogens, carrier densities are reduced by over 10 20 cm -3 , allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels without altering carrier mobility or the bandstructure. The hydrogen-tuned topological nanostructures are stable at room temperature and tunable disregarding bulk size, opening a breadth of device platforms for harnessing emergent topological states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Topological surface superconductivity in FeSe 0.45 Te 0.55

The engineering of Majorana zero modes in topological superconductors, a paradigm for the realization of topological quantum computing and topology-based devices, has been hampered by the absence of materials with sufficiently large superconducting gaps. Recent experiments, however, have provided enthralling evidence for the existence of topological surface superconductivity in the iron-based superconductor FeSe 0.45 Te 0.55 possessing a full s> ± -wave gap of a few meV. Here, we propose a mechanism for the emergence of topological superconductivity on the surface of FeSe 0.45 Te 0.55 by demonstrating that the interplay between the s ± -wave symmetry of the superconducting gap, surface magnetism, and a Rashba spin–orbit interaction gives rise to robust topological superconducting phases. Moreover, the proposed mechanism explains a series of experimentally observed hallmarks of topological superconductivity, such as the emergence of Majorana zero modes in the center of vortex cores and at the end of line defects, as well as of chiral Majorana edge modes along domain walls. We also propose that the spatial distribution of supercurrents near a domain wall is a characteristic signature measurable via a scanning superconducting quantum interference device that can distinguish between chiral Majorana edge modes and trivial in-gap states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Self-Focused Pulse Propagation Is Mediated by Spatiotemporal Optical Vortices

We show that the dynamics of high-intensity laser pulses undergoing self-focused propagation in a nonlinear medium can be understood in terms of the topological constraints imposed by the formation and evolution of spatiotemporal optical vortices (STOVs). STOVs are born from point phase defects on the sides of the pulse nucleated by spatiotemporal phase shear. These defects grow into closed loops of spatiotemporal vorticity that initially exclude the pulse propagation axis, but then reconnect to form a pair of toroidal vortex rings that wrap around it. STOVs constrain the intrapulse flow of electromagnetic energy, controlling the focusing-defocusing cycles and pulse splitting inherent to nonlinear pulse propagation. Here, we illustrate this in two widely studied but very different regimes, relativistic self-focusing in plasma and nonrelativistic self-focusing in gas, demonstrating that STOVs mediate nonlinear propagation irrespective of the detailed physics.

42 ENGINEERING↗
DOE OSTI2022

Shot noise and differential conductance as signatures of putative topological superconductivity in FeSe 0.45 ⁢Te 0.55

We present a theory for the differential shot noise, dS/dV, as measured via shot-noise scanning tunneling spectroscopy, and the differential conductance, dI/dV, for tunneling into Majorana zero modes (MZMs) in the putative topological superconductor FeSe 0.45 Te 0.55 . We demonstrate that for tunneling into chiral Majorana edge modes near domain walls, as well as MZMs localized in vortex cores and at the end of defect lines, dS/dV vanishes whenever dI/dV reaches a quantized value proportional to the quantum of conductance. Furthermore, these results are independent of the particular orbital tunneling path, thus establishing a vanishing dS/dV concomitant with a quantized dI/dV, as universal signatures for Majorana modes in two-dimensional topological superconductors, irrespective of the material’s specific complex electronic band structure.

Iron-based superconductors↗
DOE OSTI2024

Anisotropic weak antilocalization in thin films of the Weyl semimetal TaAs

Device applications of topological semimetals await the development of epitaxial films in the ultrathin limit. Weak antilocalization (WAL) has been extensively utilized in the understanding of surface states in topological insulators and shows promise for use in elucidating the properties of thin film topological semimetals. Here, we report insights from WAL in the surface state and interface transport properties of our recently synthesized single-crystal-like thin films of the Weyl semimetal TaAs(001) grown on GaAs(001). We observe robust, anisotropic WAL in the magnetoconductance from 2 to 20 K in films from 10 to 200 nm thick. We link the anisotropic WAL magnetoconductance to anisotropic mobility stemming from film topography. We conclude that WAL in the films likely originates from the antilocalization of topological surface states. The WAL magnetoconductance is impacted by the film thickness and topography, solidifying the useful role of WAL in the study of topological semimetal/semiconductor heterointerfaces. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗