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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Swensen, James S.↗
DOE OSTI2023

Thermodynamic Limit for Excitonic Light-Emitting Diodes

Here, we derive the thermodynamic limit for organic light-emitting diodes (OLEDs), and show that strong exciton binding in these devices requires a higher voltage to achieve the same luminance as a comparable inorganic LED. The OLED overpotential, which does not reduce the power conversion efficiency, is minimized by having a small exciton binding energy, a long exciton lifetime, and a large Langevin coefficient for electron-hole recombination. Based on these results, it seems likely that the best phosphorescent and thermally activated delayed fluorescence OLEDs reported to date approach their thermodynamic limit. The framework developed here is broadly applicable to other excitonic materials, and should therefore help guide the development of low voltage LEDs for display and solid-state lighting applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

One Pot Synthesis of Cyan Emitting CdZnSSe Quantum Dots for Human Centric Lighting

A one pot synthesis of blue and green emissive CdZnSSe quantum dots (QDs) from thio- and selenoureas and Cd and Zn carboxylates is optimized using high throughput robotic optimization. A large set of spectral data (N = 192) is used to train machine learning models that accurately predict the photoluminescence emission wavelength (λmax) and full-width half-maximum, and the relative photoluminescence quantum yield (PLQY) from the S:Se and Zn:Cd stoichiometries and reaction time. ZnS shells are deposited on the crude QD heterostructures using 4-tert-butylbenzyl mercaptan, a more reactive source of sulfide that enables shell growth below the temperature where ion diffusion in the QD can broaden its optical spectrum (≤275 °C). These optimized procedures provide gram quantities of blue-green emitting QDs (PLQY = 85–99%) in a single reaction vessel. A solid state lighting device (4260 K) that incorporates cyan emissive QDs achieved a higher luminous efficacy of 179 lm/W and melanopic daylight efficiency ratio (0.71) than existing commercial human centric lighting devices.

Jordan, Abraham J↗
DOE OSTI2014

Spectroscopic enhancement in nanoparticles embedded glasses

This presentation provides an overview of the recent progress in the enhancement of the spectroscopic characteristics of the glass embedded with nanoparticles (NPs). Some of our research activities with few significantly new results are highlighted and facilely analyzed. The science and technology dealing with the manipulation of the physical properties of rare earth doped inorganic glasses by embedding metallic NPs or nanoclusters produce the so-called 'nanoglass'. Meanwhile, the spectroscopic enhancement relates the intensity of the luminescence measured at certain transition. The enhancement which expectedly due to the 'plasmonics wave' (referring to the coherent coupling of photons to free electron oscillations called plasmon) occurs at the interface between a conductor and a dielectric. Plasmonics being an emerging concept in advanced optical material of nanophotonics has given this material the ability to exploit the optical response at nanoscale and opened up a new avenue in metal-based glass optics. There is a vast array of plasmonic NPs concepts yet to be explored, with applications spanning solar cells, (bio) sensing, communications, lasers, solid-state lighting, waveguides, imaging, optical data transfer, display and even bio-medicine. Localized surface plasmon resonance (LSPR) can enhance the optical response of nanoglass by orders of magnitude as observed. The luminescence enhancement and surface enhanced Raman scattering (SERS) are new paradigm of research. The enhancement of luminescence due to the influence of metallic NPs is the recurring theme of this paper.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dual interfacial H-bonding-enhanced deep-blue hybrid copper–iodide LEDs

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids are a compelling solution for efficient and stable deep-blue lighting, owing to their tunability, high photoluminescence efficiency and environmental sustainability. Here we present a hybrid copper–iodide that shows near-unity photoluminescence quantum yield (99.6%) with an emission wavelength of 449 nm and colour coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. Here, we use the thin film of this hybrid as the sole active emissive layer to fabricate deep-blue light-emitting diodes and subsequently enhance the device performance through a dual interfacial hydrogen-bond passivation strategy. This synergetic surface modification approach, integrating a hydrogen-bond-acceptor self-assembled monolayer with an ultrathin polymethyl methacrylate capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid emissive layer and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, a maximum luminance of 3,970.30 cd m −2 with colour coordinates (0.147, 0.091) and an excellent operational stability (half-lifetime) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm 2 that maintains high efficiency. Our findings reveal the potential of copper–iodide-based hybrid materials for applications in solid-state lighting and display technologies, offering a versatile strategy for enhancing device performances.

14 SOLAR ENERGY↗
DOE OSTI2019

Highly Efficient Broad-Band Luminescence Involving Organic and Inorganic Molecules in a Zero-Dimensional Hybrid Lead Chloride

The photophysical mechanism of ultrabright visible light emission in the zero-dimensional (0D) hybrid organic–inorganic material (HOIM), (DETA)PbCl 5 ·H 2 O (DETA = diethylenetriammonium), has been studied. This compound exhibits efficient room-temperature bluish white-light (WL) emission, corroborated by a high photoluminescence quantum yield (PLQY) value of 36.8 % and a Commission Internationale de l’Eclairage (CIE) color coordinates of (0.18, 0.17). Optical investigations reveal that broad-band emission containing multiple emission centers originates from both the fluorescence of the organic molecules DETA and self-trapped excitons within the [Pb 2 Cl 10 ] 6– inorganic bioctahedral dimers. Furthermore, an enhanced PLQY of up to 40.3% with an adjusted pure WL emission (CIE of (0.33, 0.34)) and a remarkable color rendering index of 90 was achieved through the incorporation of Mn 2+ within (DETA)PbCl 5 ·H 2 O. Our findings aid in understanding the photophysical properties of 0D HOIMs and preparation of new families of highly emissive materials for solid-state lighting applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical control. The results of these studies provide fundamental new understanding of optical processes at the nanoscale, including near-field energy transfer between quantum emitters and photonic nanostructures, dissipation phenomena of plasmonic excitations, and radiation from nanoantennas. Furthermore, they may open the way to entirely new device concepts and applications, in a broad range of disciplines including optoelectronics, sensing, spectroscopy, photovoltaics, and quantum information science. A specific application of particularly strong relevance to the DOE mission is the development of energy efficient LED active materials for solid-state lighting, based on plasmonic enhancement effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Wide-Area Thermal Processing of Light-Emitting Materials

Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is significant as higher thermal and electrical conductivities of the surface layer are critical for a successful development of integrated optoelectronic devices; and (3) PTP provides low thermal budget dopant activation with a controlled depth profile, which can be exploited for high performance device development with selective patterning of the substrate. This project has successfully demonstrated that a low thermal budget annealing technique, such as PTP, is critical to defining the path for low cost electronic devices integrated on glass or polymeric substrates. This project is complimentary to the goals of the Solid State Lighting Program within DOE. It involves new manufacturing techniques for light emitting materials that are potentially much lower cost and energy efficient than existing products. Significant opportunity exists for further exploration of AppliCote's material and device technology in combination with ORNL's PTP technique, modeling, and characterization capabilities.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2019

Origin of Broad-Band Emission and Impact of Structural Dimensionality in Tin-Alloyed Ruddlesden–Popper Hybrid Lead Iodide Perovskites

Hybrid organic-inorganic lead halide perovskites have shown promising results as active layers in light-emitting diodes, typically utilizing the near-monochromatic, free exciton emission. Some perovskite compounds, however, show broad-band emission that is more intense than the free exciton counterpart. In this study, we show that the light emission properties of Ruddlesden-Popper hybrid perovskites PEA 2 MA n-1 Pb n I 3n+1 (PEA = phenethylammonium, MA = methylammonium) can be tuned by Sn alloying and are highly sensitive to Sn %. With increasing dimensionality, the broad-band emission quantum yield decreases drastically, from 23% in n = 1 to <1% for the n = 3 compound. Using density functional theory calculations and transient reflectance spectroscopy, the broad emission is identified as originating from self-trapped excitons. A dynamic picture of the formation process is also presented, for which ultrafast (<5 ps) hole-trapping at the Sn site is the first step, followed by electron localization from Coulombic interaction. These findings are particularly valuable for designing perovskite materials with intense room-temperature broad-band emission for solid-state lighting applications.

14 SOLAR ENERGY↗
DOE OSTI2018

Identifying an efficient, thermally robust inorganic phosphor host via machine learning

Abstract Rare-earth substituted inorganic phosphors are critical for solid state lighting. New phosphors are traditionally identified through chemical intuition or trial and error synthesis, inhibiting the discovery of potential high-performance materials. Here, we merge a support vector machine regression model to predict a phosphor host crystal structure’s Debye temperature, which is a proxy for photoluminescent quantum yield, with high-throughput density functional theory calculations to evaluate the band gap. This platform allows the identification of phosphors that may have otherwise been overlooked. Among the compounds with the highest Debye temperature and largest band gap, NaBaB 9 O 15 shows outstanding potential. Following its synthesis and structural characterization, the structural rigidity is confirmed to stem from a unique corner sharing [B 3 O 7 ] 5– polyanionic backbone. Substituting this material with Eu 2+ yields UV excitation bands and a narrow violet emission at 416 nm with a full-width at half-maximum of 34.5 nm. More importantly, NaBaB 9 O 15 :Eu 2+ possesses a quantum yield of 95% and excellent thermal stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Scalable, Economical Fabrication Processes for Ultra-Compact Warm-White LEDs

Conventional warm-white LED component fabrication consists of a large number of sequential steps which are required to incorporate electrical, mechanical, and optical functionality into the component. Each of these steps presents cost and yield challenges which multiply throughout the entire process. Although there has been significant progress in LED fabrication over the last decade, significant advances are needed to enable further reductions in cost per lumen while not sacrificing efficacy or color quality. Cree conducted a focused 18-month program to develop a new low-cost, high-efficiency light emitting diode (LED) architecture enabled by novel large-area parallel processing technologies, reduced number of fabrication steps, and minimized raw materials use. This new scheme is expected to enable ultra-compact LED components exhibiting simultaneously high efficacy and high color quality. By the end of the program, Cree fabricated warm-white LEDs with a room-temperature “instant on” efficacy of >135 lm/W at ~3500K and 90 CRI (when driven at the DOE baseline current density of 35 A/cm2). Cree modified the conventional LED fabrication process flow in a manner that is expected to translate into simultaneously high throughput and yield for ultra-compact packages. Building on its deep expertise in LED wafer fabrication, Cree developed these ultra-compact LEDs to have no compromises in color quality or efficacy compared to their conventional counterparts. Despite their very small size, the LEDs will also be robustly electrically integrated into luminaire systems with the same attach yield as conventional packages. The versatility of the prototype high-efficacy LED architecture will likely benefit solid-state lighting (SSL) luminaire platforms ranging from bulbs to troffers. We anticipate that the prototype LEDs will particularly benefit luminaires with large numbers of distributed compact packages, such as linear and area luminaires (e.g. troffers). The fraction of total SSL luminaire cost made up by the LEDs themselves has steadily fallen over the past several years, but can still make up 30% or more of the bill of materials; the new LED design will radically lower this proportion. Ultra-compact, highly efficient LEDs with optimal distribution in the system will further benefit luminaire materials and assembly costs by reducing the complexity and volume of thermal management and optical subsystems.

42 ENGINEERING↗
DOE OSTI2026

Control of Excitonic Energy Transfer in RGB Quantum Dot:Polymer Composites for Tunable White Emission

Tint-controlled white light is crucial for both illumination systems and display applications. Here, in this study, we demonstrate solution-processed quantum-dot light-emitting diodes (QD-LEDs) featuring a red–green–blue (RGB) QD–poly(methyl methacrylate) (PMMA) composite emissive layer (EML) for tunable white electroluminescence (EL). In this composite EML, PMMA functions as a dispersion matrix that modulates the interdot spacing (d), thereby controlling Förster resonance energy transfer (FRET) between QDs. By adjustment of the PMMA content, the balance of R, G, and B emissions is controlled, enabling systematic and continuous tuning of the EL color from greenish to reddish white at a fixed RGB ratio and constant driving bias. Time-resolved photoluminescence measurements confirm that the variation in the exciton lifetime with the PMMA fraction is the primary factor for tuning the EL color. Notably, nearly pure white EL with CIE coordinates close to (0.33, 0.33) is achieved using a diluted PMMA matrix without significant degradation of the electrical properties. Our results demonstrate d as an independent design parameter for decoupling color tuning from RGB composition and electrical operation, providing a versatile design framework for high-quality white- or tint-controlled QD-LEDs toward advanced solid-state lighting and display technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
DOE OSTI2021

Additively Manufactured Solid-State Luminaire

This project addresses several key barriers to wide-spread adoption of additive manufacturing (AM) technology as applied to solid state lighting luminaires. The solution will utilize cutting edge AM approaches for integrating structure with thermal management solutions, electronic functionality, and optics. The research team (Eaton, Lighting Research Center (LRC) at Rensselaer Polytechnic Institute, Xerox Research Centre of Canada (XRCC)) utilize their AM and lighting expertise to investigate breakthrough manufacturing approaches that will significantly reduce cost, eliminate manufacturing process waste, and improve luminaire efficacy. The team has identified critical areas of research and proposed novel technical approaches to achieve these goals. Key areas of focus in Budget Period 1 (BP1) of the project quantified the impact of applying AM methodologies to the main, discrete subsystem components (Heat Sink, Housing, Optics, Electronics). Budget Period 2 (BP2) research explored similar impact on a fully integrated, AM modular luminaire concept. Final Achievement of the Target Metrics for the project are as follows: Material Reduction: achieved > 57.45% (target is 50%) Manufacturing Process: achieved > 51% reduction (target is 50%) Application Efficacy: achieved 126 lm/W (target is 130 lm/W) First Cost vs Baseline: demonstrated 49% improvement in project timing, 59% improvement in man hour savings and 89% worse BOM costs (due to deficiencies in current “state of the art” equipment). The BOM costs improve to 53% savings if state of the art processes and equipment could have been used.

3D Printing↗
DOE OSTI2013

Demonstration of LED Street Lighting in Kansas City, MO

This report documents a study of nine different light-emitting diode (LED) street lighting products installed in February 2011 as replacements for incumbent high-pressure sodium (HPS) luminaires in the city of Kansas City, Missouri (KCMO). The subject lighting investigation was undertaken by the city as part of a continued focus on improving street safety that had begun with an earlier extensive upgrade to the streetlighting system in the late 1990s, which substantially improved both the quantity and uniformity of its lighting. The current study was conducted in support of the U.S. Department of Energy’s Municipal Solid-State Street Lighting Consortium, via support of the GATEWAY Solid-State Lighting Technology Demonstration Program, and involved multiple staff from different organizations employing a variety of meters and procedures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2011

Host-sensitized emission of LiInW{sub 2}O{sub 8} wolframites: From red-Eu{sup 3+} to white-Dy{sup 3+} phosphors

The LiInW{sub 2}O{sub 8}:Eu{sup 3+}, LiInW{sub 2}O{sub 8}:Dy{sup 3+} and LiInW{sub 2}O{sub 8}:Eu{sup 3+}/Dy{sup 3+} phosphors were synthesized by solid-state reaction and their photoluminescence properties were studied. Under UV excitation, the LiInW{sub 2}O{sub 8}:Eu{sup 3+} phosphor exhibits an intense red emission whereas the LiInW{sub 2}O{sub 8}:Dy{sup 3+} and LiInW{sub 2}O{sub 8}:Dy{sup 3+}/Eu{sup 3+} phosphors show a white emission. The WO{sub 6} octahedra play a major role in the luminescence of the host lattice, characterized by a blue emission under UV excitation. The emission of activator ion results from an efficient energy transfer from the LiInW{sub 2}O{sub 8} host lattice to the Eu{sup 3+} and Dy{sup 3+} ions. The LiIn{sub 0.97}Dy{sup 3+}{sub 0.03}W{sub 2}O{sub 8} and LiIn{sub 0.965} Dy{sup 3+}{sub 0.03}Eu{sup 3+}{sub 0.005}W{sub 2}O{sub 8} samples, optimized for white emission, are interesting candidates for solid-state lighting applications. - Graphical abstract: LiInW{sub 2}O{sub 8}:Eu{sup 3+}, Dy{sup 3+}/Eu{sup 3+} emits red and white colors, respectively, under host excitation wavelength. An effective energy transfer from LiInW{sub 2}O{sub 8} to Eu{sup 3+} and Dy{sup 3+} ions is occurred. Eu{sup 3+} and Dy{sup 3+} occupy non-centrosymmetric sites in the host lattice. Highlights: > Photoluminescence of LiInW{sub 2}O{sub 8}:Eu{sup 3+}, Dy{sup 3+}/Eu{sup 3+} was analyzed under UV excitation at room temperature. > WO{sub 6} octahedra play a major role in the host lattice luminescence. > Eu{sup 3+} and Dy{sup 3+} ions can be excited directly through host lattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 μm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

III-Nitride Nanowire Lasers

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices. Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit vertically. By tuning the geometrical properties of the individual lasers across the array, each individual nanowire laser produced a di erent emission wavelength yielding a near continuum of laser wavelengths. I successfully fabricated an array of emitters spanning a bandwidth of 60 nm on a single chip. This was achieved in the blue-violet using III-nitride photonic crystal nanowire lasers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗