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At least 361 records · Page 20

Effects of oxide additions and temperature on sinterability of milled silicon nitride

Specimens of milled alpha-Si3N4 with 0 to 5.07 equivalent percent of oxide additions were pressureless sintered at 1650 to 1820 C for 4 hours in nitrogen while covered with powdered Si3N4 + SiO2. Densities of less than or equal to 97.5 percent resulted with approximately 2.5 equivalent percent of MgO, CeO2, Y2O3, and three mixtures involving these oxides. Densities of greater than or equal to 94 percent were obtained with approximately 0.62 equivalent percent of the same additives. At most temperatures, best sinterability (density maxima) was obtained with 1.2 to 2.5 equivalent percent additive.

Arias, A.↗

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Minnucci, J. A.↗

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

Analyses of slicing processes and junction formation processes are presented. A simple method for evaluation of the relative economic merits of competing process options with respect to the cost of energy produced by the system is described. An energy consumption analysis was developed and applied to determine the energy consumption in the solar module fabrication process sequence, from the mining of the SiO2 to shipping. The analysis shows that, in current technology practice, inordinate energy use in the purification step, and large wastage of the invested energy through losses, particularly poor conversion in slicing, as well as inadequate yields throughout. The cell process energy expenditures already show a downward trend based on increased throughput rates. The large improvement, however, depends on the introduction of a more efficient purification process and of acceptable ribbon growing techniques.

Goldman, H.↗

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗

Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

A wide range of the ion beam etch parameters are capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films. The alignment surfaces were generated by obliquely incident argon ions; a smaller range of ion beam parameters was also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high, and twist and tilt-bias angles were very small. The SEM results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

Wintucky, E. G.↗

A fully monolithic InSb infrared CCD array

Fully monolithic infrared CCD arrays fabricated in InSb are described. The process used in fabrication includes planar junction formation by ion implantation, and an aluminum and SiO2 overlapping CCD gate structure which makes use of conventional chemical and plasma etching. IR detection and readout is demonstrated with the arrays.

Thom, R. D.↗

Effect of Si3N4 powder reactivity on the preparation of the Si2N2O-Al2O3 silicon aluminum oxynitride solid solution

Dense high-purity silicon aluminum oxynitride was prepared by reactive hot-pressing of an Si3N4-Al2O3-SiO2 mixture. The formation of a single-phase material was found to be critically dependent on the Si3N4 powder in the starting mixture. It is suggested that evolution of a chlorine- and nitrogen-containing species may enhance the reactivity of Si3N4 in this reaction. Densities of O prime sialons are very similar to that of Si2N2O, the widely quoted value in the ceramics literature of 3.1 g/cu cm for the density of Si2N2O being incorrect.

Sekercioglu, I.↗

Predicting major element mineral/melt equilibria - A statistical approach

Empirical equations have been developed for calculating the mole fractions of NaO0.5, MgO, AlO1.5, SiO2, KO0.5, CaO, TiO2, and FeO in a solid phase of initially unknown identity given only the composition of the coexisting silicate melt. The approach involves a linear multivariate regression analysis in which solid composition is expressed as a Taylor series expansion of the liquid compositions. An internally consistent precision of approximately 0.94 is obtained, that is, the nature of the liquidus phase in the input data set can be correctly predicted for approximately 94% of the entries. The composition of the liquidus phase may be calculated to better than 5 mol % absolute. An important feature of this 'generalized solid' model is its reversibility; that is, the dependent and independent variables in the linear multivariate regression may be inverted to permit prediction of the composition of a silicate liquid produced by equilibrium partial melting of a polymineralic source assemblage.

Hostetler, C. J.↗

The effect of dense cores on the structure and evolution of Jupiter and Saturn

The evolutionary and static models of Jupiter and Saturn were calculated with homogeneous solar composition mantles and dense cores of material consisting of solar abundances of SiO2, MgO, Fe, and Ni. Evolutionary sequences for Jupiter were calculated with cores of mass ranging from 2 to 8% of the Jovian mass; the Saturn sequences ranged from cores of mass of 16 to 22% of total mass. Two envelope mixtures representative of the solar abundances were used: they contained mass fraction of 0.74 and 0.77 of hydrogen, respectively, and 0.24 and 0.21 mass fractions of helium. For Jupiter, the observations of the temperature at 1 bar pressure, of radius and of internal luminosity were best fit by evolutionary models with a core mass of about 6.5% and chemical composition of 0.77 mass fraction of hydrogen and 0.21 mass fraction of helium. The cooling time calculated for Saturn was 2.6 x 10 to the 9th yr, almost a factor of 2 less than the percentage of the solar system.

Grossman, A. S.↗

Melting relations and elemental distribution of portion of the system Fe-S-Si-O to 32 KB with planetary application

The melting relations and distribution of K and Cs in portions of the system was determined at high pressures. Ferrosilite is stable as a primary phase at high pressures because of the incongruent melting of ferrosilite to quartz plus liquid and the boundary between the one and two liquid fields on the joint Fe(1-x) O-FeS-SiO2 shifts away from silica with increasing pressures. Potassium K was found to have limited solubility in metal sulfide liquids at pressures up to 45 kb. The speculation that K may dissolve significantly in metal-metal sulfide liquids after undergoing first order isomorphic transition was tested by determining the distribution of Cs between sulfide and silicate liquids as an analogy to K. At 45 kb, 1400 C and 27 kb, 1300 C only limited amounts of Cs were detected in quench sulfide liquids even at pressures beyond the isomorphic transition of Cs.

Huang, W. L.↗

Effect of Yttria additives on properties of pressureless-sintered silicon nitride

Si3N4-base ceramics were made from milled Si3N4 containing 11.1 wt% SiO2 and oxide additives by pressureless sintering at 1760 C. The four-point-average moduli of rupture were 460, 515, and 515 MPa at room temperature and 270, 256, and 227 MPa at 1400 C for compositions with 3.67, 7.22, and 14.0 wt% Y2O3, respectively. The oxidation resistance of these compositions decreased with increasing Y2O3 in the 600 to 1400 C range, and no surface oxide cracking or spalling was noted. Partial substitution of Al2O3 for Y2O3 reduced both strength and oxidation resistance.

Arias, A.↗

Space Telescope digicon technology

The objective of this program was to develop the technology and construct a number of tubes conforming to the chosen configuration. A total of ten starts were made and ten tubes went through to test. Of the ten tubes three were CsI on LiF, six were CsTe on MgF2 and one was KNaCsSb on SiO2. All three faceplate crystals sealed successfully using indium as the sealant. In addition, a number of test seals were made and two photocathode sample runs were made. The tasks E-field, faceplate, anti-corona and electron optical analysis were actively pursued and the results integrated into the BASD HRS project.

Alting-Mees, H. R.↗

Viscous flow and crystallization behavior of tektite glasses

The variation of viscosity with temperature was determined in the 200-2000 K range for a Muong Nong tektite material. The viscosity at the liquidus temperature of 1320 C is 20,000 P; treatments between 900 and 1300 C do not result in significant crystallization in the natural sample except when the sample is heated in contact with a synthetic tektite composition. Two synthetic microtektite with lower SiO2 contents than the Muong Nong material were also examined; heat flow calculations were performed for 2.5 to 10 cm spheres of tektite when cooling by radiation.

Klein, L. C.↗

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Vasquez, R. P.↗

Chondrules in H3 chondrites - Textures, compositions and origins

Compositional and textural variations among chondrules in unequilibrated (type 3) H-group chondrites are examined in order to determine possible relations between chondrule compositions and textures. Bulk compositions of polished thin sections of 90 individual chondrules and 16 compound chondrule sets from the Sharps, Tieschitz and Bremervorde chondrites were measured by broad-beam electron probe analyses; the chondrules were also classified petrographically as barred olivine, porphyritic olivine, porphyritic pyroxene, barred pyroxene, radiating pyroxene or fine-grained. The mean compositions of each type are found to be distinct as verified by discriminant analysis, despite a large scatter, with the olivine-rich chondrules characterized by low SiO2 and high FeO and MgO contents, greater concentrations of TiO2, Al2O3, Na2O and K2O, and lower Cr2O3 and MnO relative to pyroxene-rich chondrules. Data suggest that composition, together with cooling rate, has played a conspicuous role in producing observed chrondrule textures, and are consistent with chondrule formation from mixtures of differing fractions of high-, intermediate- and low-temperature nebular condensates that underwent melting in space.

Lux, G.↗

Carbon dioxide within Venus and the earth

The maximum inventories of CO2 and H2O in the terrestrial and Venus mantles are calculated on the basis of shock wave data for magnesite and dunite to be approximately 1,000 times the observed atmospheric inventories. The CO2 fugacity determined for the buffered reaction MgCO3 plus SiO2 going to MgSiO3 plus CO2 yields values which increase from 0.0001 to 1.0 times the lithostatic pressure, going from 35 to 800 km depths in the earth. The major uncertainties in the fugacity calculations arise from lack of knowledge of effective activities. The calculated fugacity of CO2 and water brought to the surface from hypothetical mantle reservoirs on earth and Venus indicate that, in the case of the earth, the cool and dry atmosphere is strongly depleted in both CO2 and H2O compared to the low velocity zone. In contrast to the earth, on Venus, the 750 K surface temperature and 90 bar CO2 surface pressure are in equilibrium and probably in communication with an assumed upper mantle CO2 reservoir.

Ahrens, T. J.↗

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗

Thermal decomposition of a Si3N4-22 wt% Al2O3 alloy

It is pointed out that materials near the Si3N4 corner of the Si3N4-AlN-Al2O3-SiO2 quaternary, termed sialons are candidate materials for high performance applications. Hot pressed alloys in this system are useful because they possess high flexure strengths and good oxidation and creep resistance. The results of the thermal decomposition studies conducted indicate that dissociation and resulting weight loss lead to inhomogeneous specimens. Material loss comes primarily from near the surface (at least initially) thus causing differences between the composition of the surface material and the bulk. In these specimens, the O-prime phase was found to be the least stable to dissociation and the beta-prime phase the most stable. This result is in accord with the conclusions of Mitomo et al. (1979) that Si2N2O has a larger equilibrium SiO partial pressure than either the X phase or the beta-prime phase.

Ditchek, B. M.↗