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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Elucidating the role of oxidation in two-dimensional silicon nanosheets

We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si–O–Si, O x Si) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with a low absolute photoluminescence quantum yield (as low as 0.2%). By intentionally oxidizing the nanosheets, the photoluminescence peak emission wavelength blueshifted to 510 nm, and the quantum yield increased by more than an order of magnitude to 8.5%. These results demonstrate that oxidation of 2D silicon nanosheets modulates the material's bandgap and suggests that previously reported photoluminescence properties for this material resulted, in part, from oxidation.

Essner, Jeremy B. [Iowa State Univ., Ames, IA (Uni↗
NASA NTRS1998

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Opila, Elizabeth J.↗
DOE OSTI2026

Bias-Modulated ALD of ZnO: Insights into Precursor-Surface Interactions for ZnO Films

Atomic layer deposition (ALD) is widely used to deposit conformal thin films but is often limited in the tunability of the resulting material’s properties. Substrate bias and electric fields alter precursor-surface interactions and provide means to tune material properties. To explore this, we performed zinc oxide (ZnO) ALD using diethylzinc (DEZ) and water on silicon native oxide substrates at 150 °C in a sample holder designed to create a static electrical field by biasing one plate of a parallel plate capacitor-style sample holder during deposition. ZnO films prepared in an electric field/on a biased sample holder were thinner, changed relative crystalline composition, and contained more carbon compared to samples grown in identical sample holders without bias. The thickness was independent of the magnitude of the eletric field between plates, indicating that the primary driver for the change was substrate biasing not the electric field between plates of the parallel plate capacitor-style sample holder. Density functional theory calculations showed enhanced electron migration between dissociatively adsorbed DEZ molecules and the ZnO (002) facet with increasing force from an electric field at the substrate surface, which strengthens the electronic interactions between the surface and the adsorbate. These models offer a compelling explanation for the inhibited growth, changes in the crystallinity, and increase in carbon content of films grown in an electric field/on biased plates.

Jones, Jessica C. (ORCID:0000000174754620)↗
NASA NTRS1986

Further advances in silicon solar cell technology for space application

Recent improvements relating to the design of high efficiency cells are presented. A conceptual design using passivation techniques is discussed, which potentially increases the open circuit voltage to approximately 650 mV. This concept is supported by experimental data using only silicon passivation beneath contacts. The use of thin thermal oxides of silicon for passivation between contacts is also discussed. A number of novel structures have also been fabricated to investigate reduction in the thermal alpha of planar and sculptured cells. It is shown that this may be as low as 0.63 on glassed gridded back cells, and that the IR rejection beyond 1.1 microns may approach 100 percent if the backside is AR coated. Finally, experimental data is given to support the existence of free electron absorption in heavily doped emitters on sculptured cells.

Lillington, D. R.↗
NASA NTRS1992

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

Petit, J. B.↗
NASA NTRS1977

Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

Buckley, D. H.↗
DOE OSTI2021

Producing cement clinker assemblages in the system: CaO-SiO2-Al2O3-SO3-CaCl2-MgO

Highlights: • Alinite formation conditions are optimised. • Ye'elimite and alinite cannot be simultaneously produced. • Ternesite and chlormayenite are compatible at 1150 °C. • Alite is formed at a reduced temperature of 1300 °C. • Wadalite and chlorellestadite can incorporate chloride in cement clinker assemblages. The cement industry is carbon-intensive, and the valorisation of industrial side-streams/residuals for use as alternative raw materials can enable the cement industry to reduce its carbon footprint as well as promote resource efficiency. Apart from key clinker ingredients such as CaO, Al{sub 2}O{sub 3}, and SiO{sub 2}, industrial residues can also contain MgO, CaCl{sub 2}, and SO{sub 3}. Therefore, this study investigates the formation of cement clinker assemblages in the system CaO-SiO{sub 2}-Al{sub 2}O{sub 3}-SO{sub 3}-CaCl{sub 2}-MgO at temperatures ranging between 1100 and 1300 °C. The production of a clinker composed mainly of alinite and ye'elimite is first attempted; it is found that these phases cannot be simultaneously produced. Ternesite is also not compatible with alinite under the conditions studied. Wadalite is compatible with both ye'elimite and ternesite, while ternesite is also compatible with chlormayenite at 1150 °C. Additionally, the low-temperature formation of alite was also observed with the presence of CaCl{sub 2} in the raw-material mix.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon

The present 1000 C and 1300 C oxidation tests on 111-oriented single-crystal Si and dense CVD Si3N4 notes the oxidation rates of the latter in wet O2, dry O2, wet inert gas, and steam atmosphere conditions to be several orders of magnitude lower than the rates for the former in identical atmospheric conditions. Although the parabolic rate constant for Si increased linearly as the water vapor pressure increased, the parabolic rate constant for Si3N4 exhibited a nonlinear dependency on water vapor pressure in the presence of O2. NO and NH3 formation at the reaction interface of Si3N4, and the counterpermeation of these reaction products, are noted to dominate reaction kinetics.

Choi, Doo J.↗
NASA NTRS1976

Material development aspects of an oxidation protection system for a reinforced carbon-carbon composite

The paper describes the procedures which led to selection of a diffusion-coated siliconized oxidation-resistant reinforced carbon-carbon composite as a candidate for use in the leading edge structure of the Space Shuttle for the purpose of providing thermal protection. Materials were evaluated on the basis of oxidation-inhibitor performance, strength properties, and fabricability. Compounds of titanium, tantalum, zirconium, silicon, hafnium, aluminum, and boron were compounded with the reinforced carbon-carbon material in two different processing techniques to discover an oxidation-inhibited system which provided multicycle protection at temperatures up to 4000 F. Details of the manufacture and testing of the reinforced carbon-carbon composites are provided.

Rogers, D. C.↗
NASA NTRS1972

Electron tunnelling into amorphous germanium and silicon.

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Smith, C. W.↗
NASA NTRS1974

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Cohen, R. A.↗
DOE OSTI2020

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗
NASA NTRS2005

In Situ Resource Utilization (ISRU) Experiments for Mars Exploration

In situ resource utilization can best be described as living off the land. In our case the land is the planet Mars. ISRU is based on the idea that some fraction of the consumables, life support and propellant materials do not have to be flown from earth. Rather, they can be manufactured or extracted from resources already present on Mars. The primary resources on Mars are the atmosphere, polar caps and regolith. The atmosphere of Mars is mostly carbon dioxide as shown in the table below. The proportion of oxygen on the other hand is quite small. Still, there is quite a bit of oxygen in the Martian atmosphere, but it is unfortunately tied up with carbon. Thus, one of the goals of ISRU is the separation of breathable oxygen from the carbon dioxide. Several means of separation have been proposed. We have begun experiments on another approach for production of oxygen with carbon monoxide as a useful by product. Our work on a CO2 separator is described later in this report. Regolith melting is another means of obtaining materials. Two materials of interest are iron and silicon. Iron oxide is plentiful on Mars and is of obvious importance for structural components. Silicon is the foundation of solid state devices. Power generation on Mars may be accomplished using silicon solar cells. There is discussion of the feasibility of in situ production of solar cells. This would require a means of extracting silicon from the regolith. We have conducted several experiments concerning melting and glassification of the Mars soil simulant. Other summer faculty fellows have tried various means of processing the stimulant material. These include furnace melting, microwave melting and laser ablation. We have conducted several furnace melting experiments in both air and carbon dioxide environments. We have also carried out experiments to test spark melting in a carbon dioxide atmosphere. These experiments suggest the possibility of using arc melting in a reducing atmosphere. It is important to keep in mind that we are working with a soil stimulant. Any simulant, no matter how chemically similar it is to Martian regolith, may differ in mineralogy. The underlying assumption in this work is that once a glass is formed, any differences between simulant and regolith are unimportant. The exact means of forming the glass do, however, depend on the mineralogy of the regolith. A sample return mission is required to help answer these questions.

Marone, Matt↗