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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Development of advanced Si and GaAs solar cells for interplanetary missions

The deep space and planetary exploration project have been acquiring more and more importance and some of them are now well established both in ESA and NASA programs. This paper presents the possibility to utilize both silicon and gallium arsenide solar cells as spacecraft primary power source for missions far from the Sun, in order to overcome the drawbacks related to the utilisation of radioisotope thermoelectric generators - such as cost, safety and social acceptance. The development of solar cells for low illumination intensity and low temperature (LILT) applications is carried out in Europe by ASE (Germany) and CISE (Italy) in the frame of an ESA programme, aimed to provide the photovoltaic generators for ROSETTA: the cometary material investigation mission scheduled for launch in 2003. The LILT cells development and testing objectives are therefore focused on the following requirements: insolation intensity as low as 0.03 Solar Constant, low temperature down to -150 C and solar flare proton environment. At this stage of development, after the completion of the technology verification tests, it has been demonstrated that suitable technologies are available for the qualification of both silicon and gallium arsenide cells and both candidates have shown conversion efficiencies over 25% at an illumination of 0.03 SC and a temperature of -150 C. In particular, when measured at those LILT conditions, the newly developed 'Hl-ETA/NR-LILT' silicon solar cells have reached a conversion efficiency of 26.3%, that is the highest value ever measured on a single junction solar cell. A large quantity of both 'Hl-ETA/NR-LILT' silicon and 'GaAs/Ge-LILT' solar cells are presently under fabrication and they will be submitted to a qualification test plan, including radiation exposure, in order to verify their applicability with respect to the mission requirements. The availability of two valid options will minimize the risk for the very ambitious scientific project. The paper describes how the technical achievements have been possible with Si and GaAs LILT solar cells (including a comparison between measured and modelled l-V characteristics) and it presents the technology verification tests results.

Strobl, G.↗
NASA NTRS1995

Multi-Line Gamma-Ray Spectrometer Performance of a Si(Li) Detector Stack

Experimental data is presented which for the first time displays multi-line spectrometer performance of a Si(Li) detector stack at elevated temperature. The stack consists of four elements, each with a 2 cm diameter active area. Ba-133 and Ag-110m spectra are obtained using various techniques to enhance the peak-to-background ratio. Spectral data are shown as a function of temperature (94 K less than or equal to T less than or equal to 230 K) using optimized peak shaping.

Hubbard, G. Scott↗
NASA NTRS1994

Variable Temperature Performance of a Si(Li) Detector Stack

New experimental data is presented which displays 137Cs resolution of both single Si(Li) devices and a detector stack 2 cm in height as a function of temperature (85 K greater than or equal to T greater than or equal to 245 K). We also discuss variations in photopeak shape which indicate that detector charge collection may be temperature dependent over the range of interest.

Hubbard, G. Scott↗
NASA NTRS1995

Multi-Line Gamma-Ray Spectrometer Performance of a Si(Li) Detector Stack

Experimental data is presented which for the first time displays multi-line spectrometer performance of a Si(Li) detector stack at elevated temperature. The stack consists of four elements, each with a 2 cm diameter active area. Ba-133 and Ag-110m spectra are obtained using various techniques to enhance the peak-to-background ratio. Spectral data are shown as a function of temperature (94 K less than or = T less than or = 230 K) using optimized peak shaping.

Hubbard, G. Scott↗
NASA NTRS1996

Anti p and anti Lambda production in Si + Au collisions at the AGS

(anti (ital p)) and (anti (Lambda)) production in central Si + Au collisions has been measured by E589 at the BNL-AGS. Preliminary (ital m)(sub (perpendicular)) spectra are presented for (anti (ital p))'s and (anti (Lambda))'s. The (ital dn/dy) distribution for (anti (ital p))'s is also presented. Based on the (anti (ital p)) and (anti (Lambda)) measurements, (anti (Lambda))/(anti (ital p)) ratios are calculated in the rapidity range of 1.1-1.5.

Antilambda Particles↗
NASA NTRS1999

Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

Plasma-sprayed mullite (3Al2O3 central dot 2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon-based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface, Thus modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

Lee, Kang N.↗
NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗
NASA NTRS2000

Mechanical Properties of LaRC(tm) SI Polymer for a Range of Molecular Weights

Mechanical testing of an advanced polyimide resin (LaRC(tm)-SI) with known variations in molecular weight was performed over a range of temperatures below the glass transition temperature. Elastic and inelastic properties were characterized as a function of molecular weight and test temperature. It was shown that notched tensile strength is a strong function of both temperature and molecular weight, whereas stiffness is only a strong function of temperature. The combined analysis of calculated yield stress and notched tensile strength indicated that low molecular weight materials tended to fail in a brittle manner, whereas high molecular weight materials exhibited ductile failure. The microphotographs of the failure surfaces also supported these findings.

Whitley, Karen S.↗
NASA NTRS2000

Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

Lee, Kang N.↗
NASA NTRS2001

Coupling Between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

Ponchak, George E.↗
NASA NTRS2000

Using Hydrogen and Chlorine on Si(111) to Store Data

The interaction of a pyridine molecule with H and Cl atoms on a Si(111) surface is studied using a cluster model in conjunction with the B3LYP/6-3 1G level of theory. Regardless of the type of the neighboring atoms, the interaction of the pyridine with a hydrogen atom is very different from its interaction a chlorine atom. This system is discussed in terms of our atomic data storage proposal.

Bauschlicher, Charles W., Jr.↗
NASA NTRS2001

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on low resistivity Si wafers. However, the closely spaced transmission lines are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling of Finite Ground Coplanar (FGC) waveguides embedded in polyimide layers are presented for the first time. These results show that FGC lines have approximately 8 dB lower coupling than coupled Coplanar Waveguides. Furthermore, it is shown that the forward and backward coupling characteristics for FGC lines do not resemble the coupling characteristics of other transmission lines such as microstrip.

Ponchak, George E.↗
NASA NTRS2001

Coupling Between Microstrip Lines with Finite Width Ground Plane Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on complementary metal oxide semiconductor (CMOS) (low resistivity) Si wafers. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements are used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions.

Ponchak, George E.↗
NASA NTRS2000

Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

Bell, L. D.↗
NASA NTRS2002

Current Status of High Performance Large Format Si:As IBC Detectors for SOFIA-like Applications

Airborne and space telescope astronomical observations in the 5-25 micrometer wavelength region, are critical for understanding the physical conditions, composition, chemistry, and excitation of many environments in the interstellar medium, external galaxies, solar system objects, extra-solar systems, and stars. The scientific impact is particularly unique in the 5-8 micrometer and 14-25 micrometer regions which are inaccessible or poorly observed from ground-based observatories. Large-format area mid-infrared (MIR) detectors sensitive over these wavelengths and operable under moderate backgrounds (greater than 10(circumflex)6 e-/s at R=2000, 10(micrometers)) are essential for efficient large-area survey imaging and for taking moderate resolution spectra over a large spectral range. Both SOFIA and passively cooled Explorer observatories could benefit from this technology. Current first-light SOFIA instruments use small-format MIR FPA's of sizes 128x128 and 256x256, With the collaboration of Raytheon Infrared Operations (RIO), NASA-ARC has been testing the first device of this kind, a combination of 1) the ALADDIN III readout multiplexer, cryo-processed for 6K operation, with 2) SIRTF IRAC-like Sides IBC detector material. designed for higher QE and low dark current. Here we report requirements. design, and initial fabrication and testing of the first 1024x1024 Si:As IBC mid-IR detector array for these conditions. This device has exhibited low dark current, moderate noise levels, and greater than 200,000 electron linear well size at 6K operation. We conclude with suggestions for future device development for optimal performance under moderate background, SOFIA- and low Earth orbit observing conditions.

Ennico, Kimberly↗
NASA NTRS2002

Bn and Si-Doped Bn Coatings on Woven Fabrics

A computer controlled, pulsed chemical vapor infiltration (CVI) system has been developed to deposit BN from a liquid borazine (B3N3H6) source, as well as silicon doped BN coatings using borazine and a silicon source, into 2-D woven ceramic fabric preforms. The coating process was evaluated as a function of deposition temperature, pressure, and precursor flow rate. Coatings were characterized by field emission scanning electron microscopy, electron dispersive spectroscopy and Auger spectroscopy. By controlling the reactant feed ratios, Si incorporation could be controlled over the range of 6-24 atomic percent.

Hurwitz, Frances I.↗