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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Surface characterization and testing II; Proceedings of the Meeting, San Diego, CA, Aug. 10, 11, 1989

Various papers on surface characterization and testing are presented. Individual topics addressed include: simple Hartmann test data interpretation, optimum configuration of the Offner null corrector, system for phase-shifting interferometry in the presence of vibration, fringe variation and visibility in speckle-shearing interferometry, functional integral representation of rough surfaces, calibration of surface heights in an interferometric optical profiler, image formation in common path differential profilometers, SEM of optical surfaces, measuring surface profiles with scanning tunneling microscopes, surface profile measurements of curved parts, high-resolution optical profiler, scanning heterodyne interferometer with immunity from microphonics, real-time crystal axis measurements of semiconductor materials, radial metrology with a panoramic annular lens, surface analysis for the characterization of defects in thin-film processes, Spacelab Optical Viewport glass assembly optical test program for the Starlab mission, scanning differential intensity and phase system for optical metrology.

Greivenkamp, John E.↗
NASA NTRS1989

Piezoresistive silicon pressure sensors in cryogenic environment

This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

Kahng, Seun K.↗
NASA NTRS1991

Optimization of transistor design including large signal device/circuit interactions at extremely high frequencies (20-100+GHz)

Transistor design for extremely high frequency applications requires consideration of the interaction between the device and the circuit to which it is connected. Traditional analytical transistor models are to approximate at some of these frequencies and may not account for variations of dopants and semiconductor materials (especially some of the newer materials) within the device. Physically based models of device performance are required. These are based on coupled systems of partial differential equations and typically require 20 minutes of Cray computer time for a single AC operating point. A technique is presented to extract parameters from a few partial differential equation solutions for the device to create a nonlinear equivalent circuit model which runs in approximately 1 second of personal computer time. This nonlinear equivalent circuit model accurately replicates the contact current properties of the device as computed by the partial differential solver on which it is based. Using the nonlinear equivalent circuit model of the device, optimization of systems design can be performed based on device/circuit interactions.

Levy, Ralph↗
NASA NTRS1990

High-temperature electronics

To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.

Matus, Lawrence G.↗
NASA NTRS1992

Advances in MMIC technology for communications satellites

This paper discusses NASA Lewis Research Center's program for development of monolithic microwave integrated circuits (MMIC) for application in space communications. Emphasis will be on the improved performance in power amplifiers and low noise receivers which has been made possible by the development of new semiconductor materials and devices. Possible applications of high temperature superconductivity for space communications will also be presented.

Leonard, Regis F.↗
NASA NTRS1993

Energetic Atoms Would Etch Photoresists Anisotropically

Directed beams of single oxygen atoms having kinetic energies between 1 and 5 eV used in anisotropic etching of oxygen-labile photoresist patterns on silicon wafers. Key step in manufacturing integrated circuits on semiconductor wafers. Damage to semiconductor material under photoresist layer reduced or eliminated. Method incorporated into lithographic processes for fabrication of integrated circuits.

Koontz, Steven↗
NASA NTRS1992

Photovoltaic Array Space Power flight experiment plus diagnostics (PASP+) modules

The Photovoltaic Array Space Power Plus Diagnostics flight experiment (PASP+) subsumes twelve solar array modules which represent the state of the art in the space photovoltaic array industry. Each of the twelve modules individually feature specific photovoltaic technologies such as advanced semiconductor materials, multi-bandgap structures, lightweight array designs, advanced interconnect technologies, or concentrator array designs. This paper will describe each module in detail including the configuration, components, materials, anticipated on orbit performance, and some of the aspects of each array technology. The layout of each module and the photovoltaic cells or array cross section will be presented graphically. A discussion on the environmental constraints and materials selection will be included as well as a delineation of the differences between the modules and the baseline array configuration in its intended application.

Cooley, William T.↗
NASA NTRS1994

Metal-Film Hall-Effect Devices

Large positive and negative Hall coefficients achievable. Family of Hall-effect devices made from multilayer metal films instead of semiconductor materials. Metal films easier to fabricate; formed by deposition on variety of substrates, and leads readily attached to them. Fabricated with larger areas, potentially more reliable, and less affected by impurities. Also used to measure magnetic fields. Devices especially useful at low temperatures.

Peters, Palmer N.↗
NASA NTRS1994

Sensor Detects Semiconductor Escaping From Ampoule

Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Because of step increase in resistance, sensor regarded as operating in simple on/off mode used to shut down crystal-growth furnaces automatically. Sensor incorporated into cartridge in various ways; affixed to outer wall of ampoule or to inner wall of cartridge by mechanical mounting or by vapor deposition.

Watring, Dale A.↗
NASA NTRS1994

Ampoule failure sensor time response testing: Experiment 1

The response time of an ampoule failure sensor exposed to a liquid or vapor gallium-arsenide (GaAs) is investigated. The experimental configuration represents the sample/ampoule cartridge assembly used in NASA's Crystal Growth Furnace (CGF). The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. For the III-IV compound of GaAs, a platinum metal was chosen based on the reaction of platinum and arsenic at elevated temperatures which forms a low melting eutectic. Ampoule failure is indicated by a step change in resistance of the failure sensor on the order of megohms. The sensors will increase the safety of crystal growth experiments by providing an indication that an ampoule has failed. Experimental results indicate that the response times (after a known ampoule failure) for the 0.003 and 0.010 inch ampoule failure sensors are 2.4 and 3.6 minutes, respectively. This ampoule failure sensor will be utilized in the CGF during the second United States Microgravity Laboratory Mission (USML-2) and is the subject of a NASA patent application.

Johnson, M. L.↗
NASA NTRS1994

Ampoule failure sensor time response testing: Experiments 2 and 3

The response time of an ampoule failure sensor exposed to a liquid or vapor gallium-arsenide (GaAs) and the corresponding breach time of the containing cartridge is investigated. The experiments were conducted in niobium-hafnium (WC-103) cartridges with an exterior silicide coating. These cartridges were built to flight specifications that were used in NASA's Crystal Growth Furnace during the first United States Microgravity Laboratory (USML-1) mission. The ampoule failure sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. In these experiments a platinum metal was used for the manufacture of the sensors. This technical report discusses the response time of two different sensor designs. The first design utilizes a helical wrapped wire and the second uses a single bare wire element. Experimental results indicate that both sensors are adequate in sensing the presence of molten or vapor GaAs with the latter having a 2-minute longer response time. In both experiments, the containing cartridge was breached within 185 minutes after ampoule rupture.

Johnson, M. L.↗
NASA NTRS1995

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗
NASA NTRS1996

Increased Efficiency LED

In a semiconductor light emitting diode (LED) a large proportion of the light produced will be internally reflected when it strikes the end face of the LED at a semiconductor-air interface. This is due to the high index of refraction of most LED semiconductor materials. This problem may be partially overcome by modification of the shape of the LED by a reverse taper of the sides of the LED. Light is redirected by the taper to strike the interface at an angle closer to normal. This allows light to exit the LED that would be totally internally reflected in an untapered LED. The novelty of the present invention lies in the tapering of the sides of the LED for increased through transmission of light. Prior art devices have made use surface modifications such as roughening, addition of guiding layers, use of index matching materials and hemispherical shaping of the emitting end of the LED. Current technology LEDs have a transmission efficiency of only a few percent. An increase in this efficiency would be of great value to any technology that makes use of LEDs for light generation. The present invention is related to LAR 1 5050-SB, Collection of Light from Optical Fibers of NA greater than 1.

Egalon, Claudio Oliviera↗
NASA NTRS1996

Naval Research Laboratory's programs in advanced indium phosphide solar cell development

The Naval Research Laboratory (NRL) has been involved in the development of solar cells for space applications since the 1960s. It quickly became apparent in this work that radiation damage caused to solar cells by electrons and protons trapped by the earth's magnetic field would seriously degrade the power output of photovoltaic arrays in extended missions. Techniques were therefore developed to harden the cells by shielding them with coverglass, etc. Ultimately, however, there is a limit to such approaches, which is determined by the radiation response of the semiconductor material employed. A desire for high efficiency and radiation resistance led to the development of alternative cell technologies such as GaAs, which has since become the technology of choice for many applications. InP cells are currently the most radiation resistant, high efficiency, planar cells known. NRL first sponsored InP solar cell technology in 1986, when Arizona State University was contracted to grow p/n cells by liquid phase epitaxy. NRL's interest in InP cells was generated by the results presented by Yamaguchi and his co-workers in the early 1980s on the remarkable radiation resistance of cells grown by diffusion of S into Zn doped p-type InP substrates. These cells also had beginning of life (BOL) efficiencies approximately 16%(AM0). Related to the radiation resistance of the cells was the fact that radiation-induced damage could be optically annealed by sunlight. Relatively large quantities of 1 x 2 cm(exp 2) diffused junction cells were made and were used on the MUSES-A and the EXOS-D satellites. These cells were also available in the U.S. through NIMCO, and were studied at NRL and elsewhere. Workers at NASA Lewis became involved in research in InP cells about the same time as NRL.

Summers, Geoffrey P.↗
NASA NTRS1996

STS-78 Flight Day 13

On this thirteenth day of the STS-78 mission, the flight crew, Cmdr. Terence T. Henricks, Pilot Kevin R. Kregel, Payload Cmdr. Susan J. Helms, Mission Specialists Richard M. Linnehan, Charles E. Brady, Jr., and Payload Specialists Jean-Jacques Favier, Ph.D. and Robert B. Thirsk, M.D., begin another day of scientific investigations on board Columbia as the Life and Microgravity Spacelab mission continues its endurance record. The seven crew members continue supporting a variety of experiments investigating the effects of microgravity on the human body. Studies looking at muscle strength and energy expenditure and pulmonary function continue throughout the day, as well as the processing of advanced semiconductor materials and alloys in the Advanced Gradient Heating Facility. In an interview with the NBC News, Mission Commander Tom Henricks is shown discussing Columbia's flight and the varied experiments that are being conducted on board. Crew members are shown participating in tests that measure their performance.

Source record↗
NASA NTRS1997

The Influence of a Rotating Magnetic Field on Solidification from a Traveling Solvent Zone

Application of a high frequency rotating magnetic field (50-400Hz) (RMF) with a strength of the order of 1 mT can be used to influence the fluid flow in an electrically conductive melt. The advantage of the RMF during the traveling solvent zone method for growth of semiconductor materials will be discussed. Preliminary modeling results for cadmium telluride growth from a tellurium solvent zone will be discussed.

Gillies, Donald C.↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗