Preparation and Thermoelectric Properties of p- and n-type IrSb(sub 3)
IrSb(sub 3) belongs to a large family of compounds with the skutterudite crystal structure (CoAs(sub 3)).
seebeck coefficient electrical resistivity thermal↗
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Results for “SEEBECK EFFECT”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Shockwave Consolidation of Nanostructured Thermoelectric Materials
Nanotechnology based thermoelectric materials are considered attractive for developing highly efficient thermoelectric devices. Nano-structured thermoelectric materials are predicted to offer higher ZT over bulk materials by reducing thermal conductivity and increasing electrical conductivity. Consolidation of nano-structured powders into dense materials without losing nanostructure is essential towards practical device development. Using the gas atomization process, amorphous nano-structured powders were produced. Shockwave consolidation is accomplished by surrounding the nanopowder-containing tube with explosives and then detonating. The resulting shock wave causes rapid fusing of the powders without the melt and subsequent grain growth. We have been successful in generating consolidated nano-structured bismuth telluride alloy powders by using the shockwave technique. Using these consolidated materials, several types of thermoelectric power generating devices have been developed. Shockwave consolidation is anticipated to generate large quantities of nanostructred materials expeditiously and cost effectively. In this paper, the technique of shockwave consolidation will be presented followed by Seebeck Coefficient and thermal conductivity measurements of consolidated materials. Preliminary results indicate a substantial increase in electrical conductivity due to shockwave consolidation technique.
Prasad, Narasimha S.↗
Band gap estimation from temperature dependent Seebeck measurement—Deviations from the 2e|S|maxTmax relation
Not Available
Gibbs, Zachary M.↗
Solid-Liquid Interface Characterization Hardware: Advanced Technology Development (ATD)
This ATD has the goal of enabling the integration of three separate measurement techniques to characterize the solid-liquid interface of directionally solidified materials in real-time. Arrays of film-based metal thermocouple elements are under development along with compact Seebeck furnaces suitable for interfacing with separately developed X-ray Transmission Microscopes. Results of applying film arrays to furnace profiling are shown, demonstrating their ability to identify a previously undetected hardware flaw in the development of a second-generation compact furnace. Results of real-time furnace profiling also confirmed that the compact furnace design effectively isolates the temperature profiles in two halves of the furnace, a necessary feature. This isolation had only been inferred previously from the characteristics of Seebeck data reported. Results from a 24-thermocouple array successfully monitoring heating and isothermal cooling of a tin sample are shown. The importance of non-intrusion by the arrays, as well as furnace design, on the profiling of temperature gradients is illustrated with example measurements. Further developments underway for effectively combining all three measurements are assessed in terms of improved x-ray transmission, increased magnification, integral arrays with minimum intrusion, integral scales for velocity measurements and other features being incorporated into the third generation Seebeck furnace under construction.
Peters, Palmer N.↗
Enhanced thermoelectric performance via quantum confinement in a metal oxide semiconductor field effect transistor for thermal management
Abstract The performance of thermoelectric devices is gauged by the dimensionless figure of merit $${{{{{\boldsymbol{ZT}}}}}}$$ ZT . Improving $${{{{{\boldsymbol{ZT}}}}}}$$ ZT has proven to be a formidable challenge given the interdependence of its constitutive quantities, namely Seebeck coefficient, electrical conductivity, thermal conductivity, and temperature. Here, we use quantum confinement to decouple Seebeck coefficient and electrical conductivity to demonstrate an order of magnitude quantum-based enhancement to the thermoelectric figure of merit $${{{{{\boldsymbol{ZT}}}}}}$$ ZT in complimentary metal-oxide-semiconductor field-effect transistors. While most quantum-based enhancement is done through physical confinement using two-dimensional materials, our approach uses electrical confinement. Because of this, our device is more robust than the two-dimensional materials currently used. We further articulate that improvement by as much as a factor of 50 could be achieved in a practical setting. Our approach further provides a path for monolithic integration of on-chip coolers and energy scavengers with virtually no deviation from the fabrication flow of standard electronics.
Oxandale, Samuel W. (ORCID:0000000207484066)↗
Relativistic quasiparticle band structures of Mg 2 Si, Mg 2 Ge, and Mg 2 Sn: Consistent parameterization and prediction of Seebeck coefficients
We apply density functional and many-body perturbation theory calculations to consistently determine and parameterize the relativistic quasiparticle band structures of Mg 2 Si, Mg 2 Ge, and Mg 2 Sn, and predict the Seebeck coefficient as a function of doping and temperature. The quasiparticle band gaps, including spin-orbit coupling effects, are determined to be 0.728 eV, 0.555 eV, and 0.142 eV for Mg 2 Si, Mg 2 Ge, and Mg 2 Sn, respectively. The inclusion of the semicore electrons of Mg, Ge, and Sn in the valence is found to be crucial for the accurate determination of the band gaps of Mg 2 Ge and Mg 2 Sn. We also developed a Luttinger-Kohn Hamiltonian and determined a set of band parameters to model the near-edge relativistic quasiparticle band structure consistently for all three compounds that can be applied for thermoelectric device simulations. Our calculated values for the Seebeck coefficient of all three compounds are in good agreement with the available experimental data for a broad range of temperatures and carrier concentrations. Our findings suggest that quasiparticle corrections are necessary for the accurate determination of Seebeck coefficients at high temperatures at which bipolar transport becomes important.
36 MATERIALS SCIENCE↗
Thermoelectric properties of the Heusler-type Fe{sub 2}VTa{sub x}Al{sub 1−x} alloys
This study focuses on the thermoelectric properties of the Heusler-type Fe{sub 2}VTa{sub x}Al{sub 1−x} alloys (0≤x≤0.12). By means of Rietveld analyses on synchrotron X-ray diffraction patterns, it is shown that the Ta atoms enter sites occupied by V atoms in the stoichiometric Fe{sub 2}VAl alloy, while the ejected V atoms are transferred to the vacant Al sites. This Ta substitution leads to an improvement of the n-type thermoelectric properties owing to two mechanisms. On the one hand, the atoms position in the structure leads to an off-stoichiometric effect such as already observed in V-rich Fe{sub 2}V{sub 1+y}Al{sub 1−y} compounds: the Seebeck coefficient is increased towards negative absolute values and the electrical resistivity is decreased, with a large shift of their peak temperature towards higher temperature. The maximum power factor is 6.5 × 10{sup −3} W/mK{sup 2} for x = 0.05 at 340 K. On the other hand, the heavy element Ta substitution combined with this off-stoichiometric effect leads to a large decrease of the thermal conductivity, owing to an increase of the scattering events. Consequently, the dimensionless figure of merit is seen to reach higher values than for the Fe{sub 2}V{sub 1+y}Al{sub 1−y} alloys, i.e., 0.21–0.22 around 400–500 K for x = 0.05 and 500 K for x = 0.08.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Enhanced Thermoelectric Properties of Cu 2 ZnSnSe 4 with Ga-doping
Gallium doped Cu 2 ZnSnSe 4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S 2 /ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.
36 MATERIALS SCIENCE↗
Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide
Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10{sup 6}/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Nonequilibrium steady-state thermoelectrics of Kondo-correlated quantum dots
The transport across a Kondo-correlated quantum dot coupled to two leads with independent temperatures and chemical potentials is studied using a controlled nonperturbative, and in this sense numerically exact, treatment based on a hybrid numerical renormalization group combined with time-dependent density matrix renormalization group (NRG-tDMRG). In the Kondo regime, for sufficiently large fixed voltage bias V ≳ T K , with T K the Kondo temperature, we find a peak in the conductance vs the temperature gradient ΔT = T R - T L across left and right lead. Focusing then on zero voltage bias but finite ΔT far beyond linear response, we reveal the dependence of the characteristic zero-bias conductance on the individual lead temperatures. Here, we find that the finite-ΔT data behaves quantitatively similar to linear response with an effective equilibrium temperature derived from the different lead temperatures. The regime of sign changes in the Seebeck coefficient, signaling the presence of Kondo correlations, and its dependence on the individual lead temperatures provide a complete picture of the Kondo regime in the presence of finite-temperature gradients. The results from the zero-bias conductance and Seebeck coefficient studies unveil an approximate “Kondo circle” in the T L /T R plane as the regime within which the Kondo correlations dominate. We also study the heat current and the corresponding heat conductance vs finite ΔT. We provide a polynomial fit for our numerical results for the thermocurrent as a function of the individual lead temperatures, which may be used to fit experimental data in the Kondo regime.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Synergistically optimized electrical and thermal transport properties of SnTe via alloying high-solubility MnTe
Lead chalcogenides are the most efficient thermoelectric materials. In comparison, SnTe, a lead-free analogue of PbTe, exhibits inferior thermoelectric performance due to low Seebeck coefficient and high thermal conductivity. In this report, we show that we can synergistically optimize the electrical and thermal transport properties of SnTe via alloying Mn. Further, we report that the introduction of Mn (0–50%) induces multiple effects on the band structure and microstructure of SnTe: for the former, it can tune the Fermi level and promote the convergence of the two valence bands, concurrently enhancing the Seebeck coefficient; for the latter, it can profoundly modify the microstructure into an all-scale hierarchical architecture (including nanoscale precipitates/MnTe laminates, stacking faults, layered structure, atomic-scale point defects, etc.) to scatter phonons with a broad range of mean free paths, strongly reducing the lattice thermal conductivity. Meanwhile, most significantly, the Mn alloying enlarges the energy gap of the conduction band (C band) and the light valence band (L band), thereby suppressing the bipolar thermal conductivity by increasing the band gap. The integration of these effects yields a high ZT of 1.3 at 900 K for 17% Mn alloyed SnTe.
36 MATERIALS SCIENCE↗
Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)
Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, can be correlated with well characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us, for the first time, to quantitatively characterize actual g-jitter effects on an actual crystal growth experiment and to properly calibrate our models of g-jitter effects on crystal growth.
Favier, J.-J.↗
Study of Interesting Solidification Phenomena on the Ground and in Space (MEPHISTO)
Real-time Seebeck voltage variations in a Sn-Bi melt during directional solidification in the MEPHISTO spaceflight experiment flown on the USMP-3 mission, have been correlated with well-characterized thruster firings and an Orbiter Main System (OMS) burn. The Seebeck voltage measurement is related to the response of the instantaneous average melt composition at the melt-crystal interface. This allowed us to make a direct comparison of numerical simulations with the experimentally obtained Seebeck signals. Based on the results of preflight and real-time computations, several well-defined thruster firing events were programmed to occur at specific times during the experiment. In particular, we simulated the effects of the thruster firings on melt and crystal composition in a directionally solidifying Sn-Bi alloy. The relative accelerations produced by the firings were simulated by impulsive accelerations of the same magnitude, duration and orientation as the requested firings. A comparison of the simulation results with the Seebeck signal indicates that there is a good agreement between the two. This unique opportunity allows us to make the first quantitative characterization of actual g-jitter effects on an actual crystal growth experiment and to calibrate our models of g-jitter effects on crystal growth.
Alexander, J. Iwan D.↗
Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe
The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectric behaviours and suggest that pressure is an effective tool to control them.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effects of an External Magnetic Field on Keyhole Mode Laser Melting of 316 Stainless Steel
Keyhole-mode laser melting is an efficient method for joining or cutting large, thick components, but controlling keyhole depth and fluctuations has remained challenging. Applying an external magnetic field can control melt pool flows and indirectly influence keyhole morphology and dynamics. The induced Lorentz force, comprising Seebeck and damping components, plays a crucial role in the melt pool dynamics, depending on temperature gradient, flow rates, and magnetic field orientation and magnitude. This research investigates the effects of an external magnetic field on keyhole behavior during laser spot melting of 316 stainless steel using synchronized high-speed synchrotron X-ray and thermal imaging. Findings revealed that a longitudinal magnetic field (120 mT) increased keyhole depth but exacerbated lateral fluctuations, resulted in a 20% increase in the melt pool temperature gradient and a 27% decrease in cooling rate. Conversely, a transverse magnetic field (760 mT) reduced keyhole depth and improved porosity formation. The findings suggest that a decrease in keyhole depth correlates with a decrease in fluctuations, and vice versa. These insights enhance understanding of external magnetic fields’ impact on laser melting, with implications for improving part quality.
Alamdari, Aslan Bafahm [The Ohio State Univ., Colu↗
Topological Nernst and topological thermal Hall effect in rare-earth kagome ScMn 6 Sn 6
Thermal and thermoelectric measurements are known as powerful tools to uncover the physical properties of quantum materials due to their sensitivity towards the scattering and chirality of heat carriers. We use these techniques to confirm the presence of momentum and real-space topology in ScMn 6 Sn 6 . There is an unconventional dramatic increase in the Seebeck coefficient on entering the transverse conical spiral (TCS) state below $T$ = 200 K, suggesting an unusual scattering of heat carriers. In addition, the observed anomalous thermal Hall effect and the anomalous Nernst effect indicate nonzero Berry curvature in k space. Furthermore, we identify a significant topological contribution to the thermal Hall and Nernst signals in the TCS phase revealing the impacts of real-space Berry curvature. We discuss the presence of the topological thermal Hall effect and topological Nernst effect in the diverse HfFe 6 Ge 6 family. In conclusion, this study illustrates the importance of transverse thermal and thermoelectric measurements to investigate the origin of topological transport in the noncoplanar magnetic phases in this family of kagome metals.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Lattice thermal conductivity diminution and high thermoelectric power factor retention in nanoporous macroassemblies of sulfur-doped bismuth telluride nanocrystals
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charge transport↗