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At least 361 records · Page 20

Generation of ultra-short THz pulses in new optical nonlinear materials based on organic polymers

Using the method of optical rectification of femtosecond laser pulses, we report the generation of short (a few field cycles) terahertz pulses in the samples of films based on polyimides with covalently bound chromophore molecules of DR type. The spectral width of the produced pulses is limited by the pump pulse duration. The quadratic nonlinear optical properties are imparted to the films in the process of their fabrication by orienting the chromophore molecules in the external electric field of the applied electrodes having an original configuration. The samples are compared with the ZnTe crystal. Using the methods of coherent spectroscopy, their transmission and refractive index dispersion spectra are investigated in the frequency range 0.5 – 2.6 THz. The studied polymer composition is promising for the application in coherent spectrometers both for increasing the working spectral range without dips and for improving the spatial resolution in the near-field terahertz spectroscopy. (nonlinear optical phenomena)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Generation of frequency-tunable pulsed terahertz radiation by a Cr : forsterite laser system with an acoustooptical control of the pulse temporal profile

We report the experimental results on generating pulsed terahertz (THz) radiation, frequency-tunable within the range 0.5−2 THz. The THz pulse generation was implemented using the method of optical rectification of femtosecond laser pulses in the nonlinear organic crystal OH1. The frequency tuning of the THz radiation was provided by adaptive phase – amplitude modulation of the pump pulses from the Cr : forsterite laser system with a radiation wavelength of 1230 nm using the acoustooptical dispersion delay line. (paper)

42 ENGINEERING↗

Terahertz optical properties of LBO crystal upon cooling to liquid nitrogen temperature

The anisotropy of optical properties of nonlinear lithium borate (LBO) crystals in the range of 0.2 – 2 THz is investigated by time-domain THz spectroscopy at room temperature and at T = 81 K. It is shown that the birefringence dramatically decreases upon cooling, as a result of which phase-matching conditions cannot be implemented. At the same time, the absorption coefficients α{sub x} and α{sub y} are found to decrease significantly with decreasing temperature, due to which the LBO crystal becomes a promising material for generating THz radiation via optical rectification and fabricating periodic structures and optical elements. (nonlinear optical phenomena)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A source of THz radiation with electric field strength of more than 1 MV cm{sup −1} on the basis of 100-Hz femtosecond Cr : forsterite laser system

A source of terahertz (THz) radiation with a bandwidth of 0.5 – 2.5 THz and a pulse repetition rate of 100 Hz has been developed. The THz generation is based on optical rectification of femtosecond pulses (generated by a Cr : forsterite laser system) in a nonlinear organic crystal OH1. An optical scheme of a multipass amplifier for the Cr : forsterite laser system is developed to increase the pulse energy to 2.2 mJ. The conversion efficiency for pump laser radiation at a wavelength of 1.24 μm into THz radiation is found to be to 2 %. An electric field strength of 3.5 MV cm{sup −1} is attained when focusing a THz beam into a near diffraction-limited spot. (terahertz radiation)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Classical vs. quantum plasmon-induced molecular transformations at metallic nanojunctions

Chemical transformations near plasmonic metals have attracted increasing attention in the past few years. Specifically, reactions occurring within plasmonic nanojunctions that can be detected via surface and tip-enhanced Raman (SER and TER) scattering were the focus of numerous reports. In this context, even though the transition between localized and nonlocal (quantum) plasmons at nanojunctions is documented, its implications on plasmonic chemistry remain poorly understood. We explore the latter through AFM-TER-current measurements. We use two molecules: i) 4-mercaptobenzonitrile (MBN) that reports on the (non)local fields and ii) 4-nitrothiophenol (NTP) that features defined signatures of its neutral/anionic forms and dimer product, 4,4′-dimercaptoazobenzene (DMAB). The transition from classical to quantum plasmons is established through our optical measurements: It is marked by molecular charging and optical rectification. Simultaneously recorded force and current measurements support our assignments. In the case of NTP, we observe the parent and DMAB product beneath the probe in the classical regime. Further reducing the gap leads to the collapse of DMAB to form NTP anions. The process is reversible: Anions subsequently recombine into DMAB. Our results have significant implications for AFM-based TER measurements and their analysis, beyond the scope of this work. In effect, when precise control over the junction is not possible (e.g., in SER and ambient TER), both classical and quantum plasmons need to be considered in the analysis of plasmonic reactions

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Realizing a topological diode effect on the surface of a topological Kondo insulator

Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with unprecedented efficiency. Here, we demonstrate a topological diode effect on the surface of a three-dimensional material, SmB 6 , a candidate topological Kondo insulator. The diode effect is evidenced by pronounced rectification and photogalvanic effects under electromagnetic modulation and radiation at radio frequency. Our experimental results and modeling suggest that these prominent effects are intimately tied to the spatially inhomogeneous formation of topological surface states (TSS) at the intermediate temperature. This work provides a manner of breaking the mirror symmetry (in addition to the inversion symmetry), resulting in the formation of pn-junctions between puddles of metallic TSS. Further, this effect paves the way for efficient current rectifiers or energy-harvesting devices working down to radio frequency range at low temperature, which could be extended to high temperatures using other topological insulators with large bulk gap.

36 MATERIALS SCIENCE↗

Estimates of RF-induced erosion at antenna-connected beryllium plasma-facing components in JET

Radio-frequency (RF)-enhanced surface erosion of beryllium (Be) plasma-facing components is explored, for the first time, using the ERO code. We applied the code in order to measure the RF-enhanced edge Be line emission at JET Be outboard limiters, in the presence of high-power, ion cyclotronresonance heating (ICRH) in L-mode discharges. In this first modelling study, the RF sheath effect from an ICRH antenna on a magnetically connected, limiter region is simulated by adding a constant potential to the local sheath, in an attempt to match measured increases in local Be I and Be II emission of factors of 2 3. It was found that such increases are readily simulated with added potentials in the range of 100 200 V, which is compatible with expected values for potentials arising from rectification of sheath voltage oscillations from ICRH antennas in the scrape-off layer plasma. We also estimated absolute erosion values within the uncertainties in local plasma conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Is perpendicular magnetic anisotropy essential to all-optical ultrafast spin reversal in ferromagnets?

All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown whether PMA is necessary for spin reversal. Here we theoretically investigate magnetic thin films with either PMA or in-plane magnetic anisotropy (IMA). Our results show that spin reversal in IMA systems is possible, but only with a longer laser pulse and within a narrow laser parameter region. Spin reversal does not show a strong helicity dependence where the left- and right-circularly polarized light lead to the identical results. By contrast, the spin reversal in PMA systems is robust, provided both the spin angular momentum and laser field are strong enough while the magnetic anisotropy itself is not too strong. This explains why experimentally the majority of all-optical spin-reversal samples are found to have strong PMA and why spins in Fe nanoparticles only cant out of plane. It is the laser-induced spin–orbit torque that plays a key role in the spin reversal. Surprisingly, the same spin–orbit torque results in laser-induced spin rectification in spin-mixed configuration, a prediction that can be tested experimentally. Our results clearly point out that PMA is essential to spin reversal, though there is an opportunity for in-plane spin reversal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterizing W sources in the all-W wall, all-RF WEST tokamak environment

In this work, experimental data, together with interpretive modeling tools, are examined to study trends in the tungsten (W) source in the all-W environment of the WEST tokamak, both from the divertor and from the main chamber. In particular, a poloidal limiter protecting an ion cyclotron resonance heating (ICRH) antenna is used as proxy for main chamber sourcing. The key study is carried out by stepping up lower hybrid current drive (LHCD) power, as the only auxiliary power source. Limiter and divertor W sources exhibit a qualitatively similar proportionality to the total power crossing the separatrix, P SEP , although the main chamber source remains substantially lower than the divertor source, for the range of P SEP accessible in the experiments. Intepretive modeling of the limiter source is carried out with a particle-in-cell (PIC) sheath model coupled to a surface sputtering model. Oxygen is used as a proxy for all light impurity species allowing for characterization of the critical W erosion regions. To get a good quantitative match to the data, it is necessary to assume that the oxygen arrives at the surface mostly at high ionization stages (4+ and above). A separate simulation with SOLEDGE-EIRENE, constrained to measured upstream scrape-off-layer plasma profiles, gives oxygen fractional abundances that are compatible with the PIC simulation result. This is understood to arise from transport processes that dominate over recombination. Substituting the LHCD by ICRH, in an equivalent experiment, the local W source exhibits a 3× enhancement. This can be matched by the simulation, by assuming local RF electric field rectification, based on ~100 eV peak-to-peak, near-antennna electric field. This work has highlighted the particular importance of understanding the ion charge state balance of light impurities as these are most likely the dominant sputtering species in fusion devices with high-Z walls.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Edge loss of high-harmonic fast-wave heating power in NSTX: a cylindrical model

Efficient high-harmonic fast-wave (HHFW) heating in the National Spherical Torus Experiment Upgrade (NSTX-U) would facilitate experiments in turbulence, transport, fast-ion studies, and more. However, previous HHFW operation in NSTX exhibited a large loss of fast-wave power to the divertor along the scrape-off layer field lines for edge densities above the fast-wave cutoff. It was postulated that the wave amplitude is enhanced in the scrapeoff layer due to cavity-like modes, and that these enhanced fields drive sheath losses through RF rectification. As part of ongoing work to confirm this hypothesis, we have developed a cylindrical cold-plasma model to identify and understand scenarios where a substantial fraction of wave power is confined to the plasma periphery. We previously identified a peculiar class of modes, named annulus resonances, that conduct approximately half of their wave power in the periphery and can also account for a significant fraction of the total wave power. Here, we study the influence of annulus resonances on wave field reconstructions and find instances where annulus-resonant modes dominate the spectrum and trap over half of the total wave power at the edge. The work is part of an ongoing effort to determine the mechanism underlying these scrape-off layer losses in NSTX, identify optimal conditions for operation in NSTX-U, and predict whether similar losses occur for the ion-cyclotron minority heating scheme for both current experiments and future devices such as ITER.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The geometry of the ICRF-induced wave–SOL interaction. A multi-machine experimental review in view of the ITER operation

As a part of ITPA-Integrated Operational Scenario activities, this contribution reviews recent experimental characterizations of radio-frequency (RF)-induced scrape-off layer (SOL) modifications of various tokamaks worldwide and of the LArge Plasma Device at UCLA. The phenomenology, as observed using a large variety of measurement techniques, is consistent with expectations from RF sheath rectification. Emphasis is then put on the complex three-dimensional (3D) spatial patterns of the RF–SOL interaction, in relation to the magnetic topology and the spatial distribution of RF currents over the metallic structures surrounding the RF wave launchers. Dependence on the local plasma parameters in the antenna vicinity is also briefly addressed. The final part discusses implications for future devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗

From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation

In complementary metal oxide semiconductor (CMOS) technology, well-defined unipolar transport in field-effect transistors (FETs) is a basic requirement for logic operations, which can be realized by controllable doping of the semiconductor with electrons (n-type) or holes (p-type). However, recent demonstration of polarity controllable transistors in 2D semiconductors provides a flexible way in circuit design with increased circuit integration density. Here we demonstrate the conversion of a bidirectional rectifier to a polarity-controllable transistor in black phosphorus (BP) by dual gate modulation. Electrical characterization of the BP bidirectional rectifier reveals a current rectification of ~35 at room temperature that increases to ~350 upon lowering the temperature to 110 K. Employing cross-linked PMMA as a top gate and combining it together with the global back gate of the SiO 2 substrate, well-defined unipolar transport (n- or p-type) in BP could get accessed. This successful realization of polarity-controllable transistor in BP provides an alternative design for development of BP logic electronics.

36 MATERIALS SCIENCE↗

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗

Radiative Thermal Runaway Due to Negative-Differential Thermal Emission Across a Solid-Solid Phase Transition

Thermal runaway occurs when a rise in system temperature results in heat-generation rates exceeding dissipation rates. In this work, we demonstrate that thermal runaway occurs in radiative (photon) systems given a sufficient level of negative-differential thermal emission. By exploiting the insulator-to-metal phase transition of vanadium dioxide, we show that a small increase in heat generation (e.g., 10 nW / mm 2 ) results in a large change in surface temperature (e.g., ~35 K), as the thermal emitter switches from high emittance to low emittance. While thermal runaway is typically associated with catastrophic failure mechanisms, detailed understanding and control of this phenomenon may give rise to new opportunities in infrared sensing, camouflage, and rectification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Power Generation from a Radiative Thermal Source Using a Large-Area Infrared Rectenna

Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW / cm 2 is observed at a source temperature of 450°C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. Furthermore, the measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Coupled magnetostructural continuum model for multiferroic BiFeO 3

Here, a continuum approach to study magnetoelectric multiferroic BiFeO 3 (BFO) is proposed. Our modeling effort marries the ferroelectric (FE) phase field method and micromagnetic simulations to describe the entire multiferroic order parameter sector (polarization, oxygen antiphase tilts, strain, and magnetism) self-consistently on the same time- and length scale. In this paper, we discuss our choice of FE and magnetic energy terms and demonstrate benchmarks against known behavior. We parametrize the lowest order couplings of the structural distortions against previous predictions from density functional theory calculations giving access to simulations of the FE domain wall (DW) topology. This allows us to estimate the energetic hierarchy and thicknesses of the numerous structural DWs. We then extend the model to the canted antiferromagnetic order and demonstrate how the FE domain boundaries influence the resulting magnetic DWs. We also highlight some capabilities of this model by providing two examples relevant for applications. We demonstrate spin-wave transmission through the multiferroic domain boundaries which identify rectification in qualitative agreement with recent experimental observations. As a second example of application, we model fully dynamical magnetoelectric switching, where we find a sensitivity on the Gilbert damping with respect to switching pathways. We envision that this modeling effort will set the basis for further work on properties of arbitrary 3D nanostructures of BFO (and related multiferroics) at the mesoscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between nonmagnetic materials

The Rashba-Edelstein effect stems from the interaction between the electron's spin and its momentum induced by spin-orbit interaction at an interface or a surface. It was shown that the inverse Rashba-Edelstein effect can be used to convert a spin current into a charge current. Here, we demonstrate the reverse process of a charge-to spin-current conversion at a Bi/Ag Rashba interface. We show that this interface-driven spin current can drive an adjacent ferromagnet to resonance. We employ a spin-torque ferromagnetic resonance excitation/detection scheme which was developed originally for a bulk spin-orbital effect, the spin Hall effect. In our experiment, the direct Rashba-Edelstein effect generates an oscillating spin current from an alternating charge current driving the magnetization precession in a neighboring permalloy (Py, Ni 80 Fe 20 ) layer. As a result, electrical detection of the magnetization dynamics is achieved by a rectificationmechanism of the time dependent multilayer resistance arising from the anisotropic magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗