SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Polarizing filter for titanium-doped lithium niobate light waveguide suppresses transverse magnetic (TM) mode of light propagation while allowing transverse electric (TE) mode to continue on its way. Filter - lithium niobate crystal - is expected to find many applications in integrated optical circuits.
InAs Quantum Dots (QDs) embedded into GaAs semiconductor waveguide have unique scintillation properties, valuable for nuclear security, medical imaging, and high energy physics. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. In this type of detector, the GaAs matrix acts as a stopping material for charged particles or photons generating electrons captured by the QDs acting as luminescence centers. The QD medium is designed to provide fast capture of electrons into QDs (few ps), high QD luminescence efficiency at room temperature (>50%), and strong red-shift of photoluminescence (PL) from the GaAs absorption edge (>250nm). Typical devices consist of a 10-25um thick GaAs layer with embedded sheets of modulation p-type doped InAs QDs and an InGaAs photodetector tuned to the QD emission wavelength. The thick GaAs layer acts also as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (~1cm -1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with both an external photodiode (PD) and an integrated PD which provided an improved optical coupling. In the former case, the external InGaAs PD was air-coupled to the scintillator and had the light collection efficiency of about 1% corresponding to limited light extraction through a planar interface with air due to total internal reflection. The mean charge collected by the integrated PD was in the range of (3÷5)×10 4 photoelectrons per 1 MeV of deposited energy, or ~13-20% of the theoretically achievable light yield. Timing of the integrated device was measured by wire-bonding it to the input of an 8 GHz IC. The scintillation response shows an extremely fast 0.3-0.6 ns decay constant and about 40-70 ps time resolution, limited by the system noise. The combined light yield and decay time makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported making it valuable for high energy physics and medical imaging applications.
Space-time structured laser pulses feature an intensity peak that can travel at an arbitrary velocity while maintaining a near-constant profile. These pulses can propagate in uniform media, where their frequencies are correlated with continuous transverse wave vectors, or in structured media, such as a waveguide, where their frequencies are correlated with discrete mode numbers. Here, we demonstrate the formation and propagation of arbitrary-velocity laser pulses in a plasma waveguide where the intensity can be orders of magnitude higher than in a solid-state waveguide. The flexibility to control the velocity of the peak intensity in a plasma waveguide enables new configurations for plasma-based sources of radiation and energetic particles, including THz generation, laser wakefield acceleration, and direct laser acceleration.
An ultra-high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra-high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Here, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI with N statically imbalanced MIs, thereby increasing the OPD of a single MI by factor of N + 1. An FTS spectrometer consisting of N = 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.
Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si 3 N 4 platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.
InAs quantum dots (QDs) embedded into a waveguiding GaAs semiconductor matrix may produce scintillation detectors with exceptional speed and yield, making them valuable for nuclear security, medical imaging, and high energy physics applications. In this work, we developed thick (~25 μm) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. Here, the bulk GaAs acts as a stopping material for incident particles and as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (< 1 cm –1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with an external photodiode (PD) and an integrated PD which provided an improved optical coupling. The mean charge collected by the integrated PD corresponded to 3 × 10 4 photoelectrons per 1 MeV of deposited energy, or ~13% of the theoretically achievable light yield. Combined with the previously measured QD scintillation time of 0.3-0.6 ns, this makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported.
A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..
An all fiber wavelength selective coupler provides wavelength selective transfer of optical energy between two or more separated waveguides. The coupler includes signal cores that are separated enough that they can be fusion spliced to standard fibers as lead-in and lead-out pigtails. A bridge between the signal cores facilitates transfer of the optical energy through a process of evanescent coupling. In one example, the bridge is formed of a series of graded index cores.
A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.
Not Available
In this work, we propose an interferometric pump-probe technique that employs three entangled photons generated by cascaded spontaneous parametric downconversion. A Mach–Zehnder interferometer made of two three-port waveguide arrays is inserted in the optical path. Two independent phases introduced to manipulate the entangled photon state serve as control parameters and can selectively excite matter pathways. Compared to two-photon-absorption of an entangled photon-pair, the three-photon signals are significantly enhanced by frequency-dispersed photon-counting detection.
We generate ultrabroadband photon pairs entangled in both polarization and frequency bins through an all-waveguided Sagnac source covering the entire optical C- and L-bands (1530–1625 nm). We perform comprehensive characterization of high-fidelity states in multiple dense wavelength-division multiplexed channels, achieving full tomography of effective four-qubit systems. Additionally, leveraging the inherent high dimensionality of frequency encoding and our electro-optic measurement approach, we demonstrate the scalability of our system to higher dimensions, reconstructing states in a 36-dimensional Hilbert space consisting of two polarization qubits and two frequency-bin qutrits. Our findings hold potential significance for quantum networking, particularly dense coding and entanglement distillation in wavelength-multiplexed quantum networks.
The terahertz (THz) spectral range is the part of the electromagnetic spectrum between 0.1–10 THz or 0.03–3 mm wavelength. For a long period, the terahertz band was relatively unexplored due to the unavailability of cost-effective and powerful sources. Due to the evolution of these devices in the mid-1980s, however, terahertz radiation has attracted much more attention. Since this part of the spectrum is between the infrared (IR) and microwave frequency ranges, the development of waveguides, filters, polarizers, lenses, and other optical components. Since terahertz waves to penetrate most dielectric materials offers the possibility of many applications. Since terahertz radiation can pass through organic tissue without causing damage, and it can be safely applied for biomedical applications. Radio astronomy and wireless communication are also fields with great interest in this spectral range. For example, terahertz waves could be used to detect cold bodies and debris in space or to increase data transmission using the larger bandwidth of the terahertz band.
Comparator is integrated-optical system constructed on a LiNb03sub. waveguide chip. Only the laser, lens and detector are external to chip. Aluminized surface gratings serve as input coupler and beam splitter. Light beams striking edges are returned by ordinary total internal reflection. Three operating modes are possible: A "screening" mode, an "identification" mode and a novel "self-subtraction" mode.
A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.
A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.
We present measurements of prototype thin film Al microwave kinetic inductance detectors (MKIDs) intended for application in the sub-mm astronomy balloon experiment EXCLAIM. The device we show is dark, or non-optically coupled, and contains 16 coplanar waveguide (CPW) resonators etched into a 261 nm sputter deposited Al layer on a Si wafer. The resonators span the f0 = 3.5 - 4 GHz range, and include both lambda=2 and lambda=4 resonators. Each resonator is coupled to the feedline using one of three alternating coupling designs. We performed transmission line measurements of the device for a series of excitation powers ranging from -90 dBm to -30 dBm, and at a series of base temperatures ranging from 73 mK to 400 mK. We observed quality factors of up to Qi 107 at a base temperature of 73 mK. The lambda=2 and lambda=4 resonators performed similarly, achieving comparable Qi values. The results of these measurements are actively informing the fi nal design of the EXCLAIM instrument. EXCLAIM will incorporate six spectrometers, each containing an array of over 300 resonators in the 420-540 GHz range.
Abstract We demonstrate the generation of a cold-atom ensemble within a sub-millimeter diameter hole in a transparent membrane, a so-called “membrane MOT”. With a sub-Doppler cooling process, the atoms trapped by the membrane MOT are cooled down to 10 $$\upmu$$ μ K. The atom number inside the unbridged/bridged membrane hole is about $$10^4$$ 10 4 to $$10^5$$ 10 5 , and the $$1/e^2$$ 1 / e 2 -diameter of the MOT cloud is about 180 $$\upmu$$ μ m for a 400 $$\upmu$$ μ m-diameter membrane hole. Such a membrane device can, in principle, efficiently load cold atoms into the evanescent-field optical trap generated by the suspended membrane waveguide for strong atom-light interaction and provide the capability of sufficient heat dissipation at the waveguide. This represents a key step toward the photonic atom trap integrated platform (ATIP).