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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Fault-tolerant building-block computer study

Ultra-reliable core computers are required for improving the reliability of complex military systems. Such computers can provide reliable fault diagnosis, failure circumvention, and, in some cases serve as an automated repairman for their host systems. A small set of building-block circuits which can be implemented as single very large integration devices, and which can be used with off-the-shelf microprocessors and memories to build self checking computer modules (SCCM) is described. Each SCCM is a microcomputer which is capable of detecting its own faults during normal operation and is described to communicate with other identical modules over one or more Mil Standard 1553A buses. Several SCCMs can be connected into a network with backup spares to provide fault-tolerant operation, i.e. automated recovery from faults. Alternative fault-tolerant SCCM configurations are discussed along with the cost and reliability associated with their implementation.

Rennels, D. A.↗
NASA NTRS2001

Radiation dosimetry using three-dimensional optical random access memories

Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

Non-NASA Center↗
NASA NTRS2013

FPGA Flash Memory High Speed Data Acquisition

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Gonzalez, April↗
NASA NTRS1970

Integrated circuit random-access memory decoder

Decoder circuit with complementary-symmetry circuit configuration composed of MOS and n-p-n bipolar devices minimizes power consumption. Emitter-follower drive scheme results in low power dissipation and high speed operation.

Katz, S.↗
NASA NTRS2008

VIRTEX-4 VQ static SEU Characterization Summary

This report is the result of the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx SEE Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universities and national laboratories, combining resources to characterize reconfigurable FPGAs for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1-4. A notable exception is Ref. 5, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This report of upset susceptibility to heavy ions and protons of the static memory elements in the Virtex-4QV family is a direct parallel to the XRTC report on the thin epitaxial devices in the Virtex-2 family released four years ago.

field programmable gate array (FPGA)↗
NASA NTRS1975

Ovonic type switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Baxter, C. R.↗
NASA NTRS2014

Phonesat In-flight Experience Results

Consumer technology, over the last decade, has begun to encompass devices that enable us to figure out where we are, which way we are pointing, observe the world around us, and store and transmit this information to wherever we want. Once separate consumer products such as GPS units, digital cameras and mobile phones are now combined into the modern day Smartphone. Since these capabilities are remarkably similar to those required for the multi-million dollar satellites - so why not use a multihundred dollar Smartphone instead? The PhoneSat project of NASA Ames Research Center is developing technology demonstrations utilizing these extraordinary advances to show just how simple and cheap Space can be. The style of development revolves around the "release early, release often" Silicon Valley mentality. PhoneSat is a series of 1U CubeSat size spacecrafts that use an off-the-shelf Smartphone as their onboard computer. By doing so, PhoneSat takes advantage of the high computational capability, large memory as well as ultra-tiny sensors like high-resolution cameras and navigation devices that Smartphones offer. Along with a Smartphone, PhoneSat is equipped with other commercially available technology products, such as medical brushless motors that are used as reaction wheels. Over the four years that NASA Ames Research Center has been developing the PhoneSat project, different suborbital and orbital flight activities have proven the validity of this revolutionary approach. In early 2013, the PhoneSat project launched the first triage of PhoneSats into LEO. In the five day orbital life time, the nano-satellites flew the first functioning Smartphone based satellites (using the Nexus One and Nexus S phones), the cheapest satellite (a total parts cost below $3,500) and one of the fastest on-board processors (CPU speed of 1GHz). In late 2013, the PhoneSat project launched an improved version of its bus to a higher altitude orbit which provided data about the overall system's tolerance to the space environment. In this paper, an overview of the PhoneSat project as well as a summary of the in-flight experimental results is presented. NASA Ames Research Center is carrying on its effort to bring a paradigm shift in the way we conceive Space exploration, this new approach is certainly incarnated by PhoneSat. A set of eight PhoneSat-based CubeSats is manifested to launch in 2014 with the purpose of demonstrating new technical capabilities and being a pathfinder for future Spacecraft technology missions.

CubeSat↗
NASA NTRS1978

Uniform rotating field network structure to efficiently package a magnetic bubble domain memory

A unique and compact open coil rotating magnetic field network structure to efficiently package an array of bubble domain devices is disclosed. The field network has a configuration which effectively enables selected bubble domain devices from the array to be driven in a vertical magnetic field and in an independent and uniform horizontal rotating magnetic field. The field network is suitably adapted to minimize undesirable inductance effects, improve capabilities of heat dissipation, and facilitate repair or replacement of a bubble device.

Wolfshagen, Ronald G.↗
NASA NTRS2008

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. This investigation extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional improvement in the work output of the material, which has a stress-free Af of 113 oC, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted in the aforementioned alloy at various stress levels from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 oC. The data indicated that the amount of applied stress influenced the transformation strain available in the system, as would be expected. However, the maximum temperature reached during the thermal excursion also plays a role in determining the transformation strain, with the maximum transformation strain being developed by thermal cycling to 290 oC. In situ, neutron diffraction showed that the differences in transformation strain were related to differences in martensite texture within the microstructure when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗
NASA NTRS2011

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. The investigation we report here extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional changes in the work output of the material, which has a stress-free austenite finish temperature of 113 C, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted on the aforementioned alloy at various stresses from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 C. The data indicated that the amount of applied stress influenced the transformation strain, as would be expected. However, the maximum temperature reached during the thermal excursion also plays an equally significant role in determining the transformation strain, with the maximum transformation strain observed during thermal cycling to 290 C. In situ neutron diffraction at stress and temperature showed that the differences in transformation strain were mostly related to changes in martensite texture when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗
NASA NTRS2001

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗
NASA NTRS1989

Development of a software interface for optical disk archival storage for a new life sciences flight experiments computer

The current Life Sciences Laboratory Equipment (LSLE) microcomputer for life sciences experiment data acquisition is now obsolete. Among the weaknesses of the current microcomputer are small memory size, relatively slow analog data sampling rates, and the lack of a bulk data storage device. While life science investigators normally prefer data to be transmitted to Earth as it is taken, this is not always possible. No down-link exists for experiments performed in the Shuttle middeck region. One important aspect of a replacement microcomputer is provision for in-flight storage of experimental data. The Write Once, Read Many (WORM) optical disk was studied because of its high storage density, data integrity, and the availability of a space-qualified unit. In keeping with the goals for a replacement microcomputer based upon commercially available components and standard interfaces, the system studied includes a Small Computer System Interface (SCSI) for interfacing the WORM drive. The system itself is designed around the STD bus, using readily available boards. Configurations examined were: (1) master processor board and slave processor board with the SCSI interface; (2) master processor with SCSI interface; (3) master processor with SCSI and Direct Memory Access (DMA); (4) master processor controlling a separate STD bus SCSI board; and (5) master processor controlling a separate STD bus SCSI board with DMA.

Bartram, Peter N.↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
NASA NTRS1972

Investigation of superconducting interactions and amorphous semiconductors

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Janocko, M. A.↗
NASA NTRS2009

Video System for Viewing From a Remote or Windowless Cockpit

A system of electronic hardware and software synthesizes, in nearly real time, an image of a portion of a scene surveyed by as many as eight video cameras aimed, in different directions, at portions of the scene. This is a prototype of systems that would enable a pilot to view the scene outside a remote or windowless cockpit. The outputs of the cameras are digitized. Direct memory addressing is used to store the data of a few captured images in sequence, and the sequence is repeated in cycles. Cylindrical warping is used in merging adjacent images at their borders to construct a mosaic image of the scene. The mosaic-image data are written to a memory block from which they can be rendered on a head-mounted display (HMD) device. A subsystem in the HMD device tracks the direction of gaze of the wearer, providing data that are used to select, for display, the portion of the mosaic image corresponding to the direction of gaze. The basic functionality of the system has been demonstrated by mounting the cameras on the roof of a van and steering the van by use of the images presented on the HMD device.

Banerjee, Amamath↗
NASA NTRS2018

Range and Intensity Image-Based Terrain and Vehicle Relative Pose Estimation System

A navigation system includes an image acquisition device for acquiring a range image of a target vehicle, at least one processor, a memory including a target vehicle model and computer readable program code, where the processor and the computer readable program code are configured to cause the navigation system to convert the range image to a point cloud having three dimensions, compute a transform from the target vehicle model to the point cloud, and use the transform to estimate the target vehicle's attitude and position for capturing the target vehicle.

Gill, Nathaniel↗
NASA NTRS2009

On Nibbles and Bytes: The Conundrum of Memory for Space Systems - NASA Electronic Parts and Packaging (NEPP) and Efforts in Memories

Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart requirements. a) Many commercial devices (NVM and SDRAMs) meet or come close to this. b) Charge pump TID tolerance has improved an order magnitude over the last 10 years. 2) There are always a few programs with higher level needs and, of course, defense needs SEL: 1) Prefer none or rates that are considered low risk. a) Latent damage is a bear to deal with. 2) As we re packing cells tighter and even with lower Vdd, we re seeing SEL on commercial devices regularly (<90nm). a) Often in power conversion, I/O, or control areas. SEU: 1) It s not the bit errors, it s the SEFIs errors that are the biggest issues. a) Scrubbing concerns for risk, power, speed.

LaBel, Kenneth A.↗