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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Science challenges and research opportunities for plasma applications in microelectronics

Low-temperature plasmas (LTPs) are essential to manufacturing devices in the semiconductor industry, from creating extreme ultraviolet photons used in the most advanced lithography to thin film etching, deposition, and surface modifications. It is estimated that 40%–45% of all process steps needed to manufacture semiconductor devices use LTPs in one form or another. LTPs have been an enabling technology in the multidecade progression of the shrinking of device dimensions, often referred to as Moore’s law. New challenges in circuit and device design, novel materials, and increasing demands to achieve environmentally benign processing technologies require advances in plasma technology beyond the current state-of-the-art. The Department of Energy Office of Science Fusion Energy Sciences held a workshop titled Plasma Science for Microelectronics Nanofabrication in August 2022 to discuss the plasma science challenges and technical barriers that need to be overcome to continue to develop the innovative plasma technologies required to support and advance the semiconductor industry. One of the key outcomes of the workshop was identifying a set of priority research opportunities (PROs) to focus attention on the most strategic plasma science challenges to address to benefit the semiconductor industry. For each PRO, scientific challenges and recommended strategies to address those challenges were identified. Furthermore, this article summarizes the PROs identified by the workshop participants.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A reduced-turbulence regime in the Large Helical Device upon injection of low-Z materials powders

Abstract Recently an improved confinement regime, characterized by reduced turbulent fluctuations has been observed in the Large Helical Device upon the injection of boron powder into the plasma (Nespoli et al 2022 Nat. Phys. 18 350–56). In this article, we report in more detail the experimental observations of increased plasma temperature and the decrease of turbulent fluctuations across the plasma cross section, on an extended database. In particular, we compare powders of different materials (B, C, BN), finding similar temperature improvement and turbulence response for the three cases. Modeling of the powder penetration into the plasma and of neoclassical electric field and fluxes support the interpretation of the experimental results. Additionally, we report evidence of the temperature improvement increasing with powder injection rates and decreasing for both increasing density and heating power. Though, plasma turbulence response varies depending on the initial conditions of the plasma, making it difficult to draw an inclusive description of the phenomenon.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Towards additive manufacturing of magnetocaloric working materials

The feasibility of three-dimensional printing via the Directed Energy Deposition (DED) technique is demonstrated for the ferromagnetic AlFe 2 B 2 (aka 1-2-2) compound, which shows promise as a working material for room-temperature magnetocaloric devices. Like many intermetallic materials, the 1-2-2 compound is brittle at room temperature; not only is it difficult to synthesize from the melt, it is challenging to form it into useful geometries necessary for effective heat transfer in magnetocaloric devices. Using Laser Engineered Net Shaping (LENS TM ) synthesis from two powder precursors, AlB 2 and Fe, samples of simple (rod) and complex (honeycomb) architectures were successfully synthesized. Furthermore, the phase constitution and distribution, magnetic transition temperature, and saturation magnetization determined for the LENS TM -synthesized rod sample are all similar to those obtained for 1-2-2 materials made by conventional casting. Further, the measured magnetic entropy change, as determined from Maxwell's Relations applied to magnetic data, indicates that the magnetocaloric response of the annealed LENS TM -printed rod samples are comparable to those of the 1-2-2 compounds made by conventional techniques. These results confirm that complex magnetofunctional shapes, which are needed for efficient energy conversion in magnetocaloric devices, can be rapidly fabricated from the AlFe 2 B 2 compound.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The 2022 applied physics by pioneering women: a roadmap

Abstract Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable environment in which women can thrive. This Roadmap on Women in Applied Physics, written by women scientists and engineers, is intended to celebrate women’s accomplishments, highlight established and early career researchers enlarging the boundaries in their respective fields, and promote increased visibility for the impact women have on applied physics research. Perspectives cover the topics of plasma materials processing and propulsion, super-resolution microscopy, bioelectronics, spintronics, superconducting quantum interference device technology, quantum materials, 2D materials, catalysis and surface science, fuel cells, batteries, photovoltaics, neuromorphic computing and devices, nanophotonics and nanophononics, and nanomagnetism. Our intent is to inspire more women to enter these fields and encourage an atmosphere of inclusion within the scientific community.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

gRASPA

GPU Monte Carlo Simulation Code with a taste of RASPA We present enhancements in Monte Carlo simulation speed and functionality within an open-source code, gRASPA, which uses graphical processing units (GPUs) to achieve significant performance improvements compared to serial, CPU implementations of Monte Carlo. The code supports a wide range of Monte Carlo simulations, including canonical ensemble (NVT), grand canonical, NVT Gibbs, Widom test particle insertions, and continuous-fractional component Monte Carlo. Implementation of grand canonical transition matrix Monte Carlo (GC-TMMC) and a novel feature to allow different moves for the different components of metal-organic framework (MOF) structures exemplify the capabilities of gRASPA for precise free energy calculations and enhanced adsorption studies, respectively. The introduction of a High-Throughput Computing (HTC) mode permits many Monte Carlo simulations on a single GPU device for accelerated materials discovery. The code can incorporate machine learning (ML) potentials. The open-source nature of gRASPA promotes reproducibility and openness in science, and users may add features to the code and optimize it for their own purposes. The code is written in CUDA/C++ and SYCL/C++ to support different GPU vendors. The gRASPA code is publicly available at https://github.com/snurr-group/gRASPA.

Li, Zhao [Purdue/Northwestern/Notre Dame Universit↗
DOE OSTI2026

Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies ≥80% and area under the curve (AUC) ≥ 0.85 using as few as ∼ 6800 incident 401 nm photons, corresponding to ∼ 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

Amorphous selenium↗
DOE OSTI2025

Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

FOS: Physical sciences↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. Further, the different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermal conductivity of 3D-printed block-copolymer-inspired structures

This study primarily focuses on examining the impact that geometric structure has on thermal conductivity of multi-phase constructs in different 3D-printed poly(lactic acid), PLA, samples. The investigated structures are inspired by morphologies formed by diblock copolymers: lamellae, hexagonally packed cylinders, and gyroid. This research also investigates how volume percentage and material combination influence the thermal conductivity of these structures. Further, the samples can be tailored to simulate various thermal management structures observed in practical applications, such as thermal interface materials in electronic devices. Thermal conductivity ratio is controlled using air, the least conductive material at 0.026 W/(m K), PLA at 0.136 W/(m K), and thermal paste at 5.11 W/(m K). Different models were tested against thermal conductivity measurements in order to capture the effect of material type (PLA-Air versus PLA-Thermal Paste), volume percentage, structure, and orientation. Simple, effective medium models were good predictions of thermal conductivity in lamellar structures, but it was necessary to develop models for conduction through cylindrical and gyroid structures. Finally, all results were normalized to find a universal model that is independent of structure and material. This approach provides a simple method to predict how to reduce or enhance transport properties and heat management capabilities of 3D printed objects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Abisko: Deep codesign of an architecture for spiking neural networks using novel neuromorphic materials

The Abisko project aims to develop an energy-efficient spiking neural network (SNN) computing architecture and software system capable of autonomous learning and operation. The SNN architecture explores novel neuromorphic devices that are based on resistive-switching materials, such as memristors and electrochemical RAM. Equally important, Abisko uses a deep codesign approach to pursue this goal by engaging experts from across the entire range of disciplines: materials, devices and circuits, architectures and integration, software, and algorithms. Here, the key objectives of our Abisko project are threefold. First, we are designing an energy-optimized high-performance neuromorphic accelerator based on SNNs. This architecture is being designed as a chiplet that can be deployed in contemporary computer architectures and we are investigating novel neuromorphic materials to improve its design. Second, we are concurrently developing a productive software stack for the neuromorphic accelerator that will also be portable to other architectures, such as field-programmable gate arrays and GPUs. Third, we are creating a new deep codesign methodology and framework for developing clear interfaces, requirements, and metrics between each level of abstraction to enable the system design to be explored and implemented interchangeably with execution, measurement, a model, or simulation. As a motivating application for this codesign effort, we target the use of SNNs for an analog event detector for a high-energy physics sensor.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Localized UV emitters on the surface of β-Ga 2 O 3

Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 10 5 cm 2 V –1 s –1 ) 2D hole gas in a device with a conduction threshold density of 9.2 × 10 10 cm –2 . We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 10 12 eV –1 . Our results validate the material’s high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H 2 O 2 , can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide–semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

36 MATERIALS SCIENCE↗
DOE OSTI2020

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Dimer rattling mode induced low thermal conductivity in an excellent acoustic conductor

A solid with larger sound speeds usually exhibits higher lattice thermal conductivity. Here, we report an exception that CuP2 has a quite large mean sound speed of 4155 m s –1 , comparable to GaAs, but single crystals show very low lattice thermal conductivity of about 4 W m –1 K –1 at room temperature, one order of magnitude smaller than GaAs. To understand such a puzzling thermal transport behavior, we have thoroughly investigated the atomic structures and lattice dynamics by combining neutron scattering techniques with first-principles simulations. This compound crystallizes in a layered structure where Cu atoms forming dimers are sandwiched in between P atomic networks. In this work, we reveal that Cu atomic dimers vibrate as a rattling mode with frequency around 11 meV, which is manifested to be remarkably anharmonic and strongly scatters acoustic phonons to achieve the low lattice thermal conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Localized interlayer excitons in MoSe 2 –WSe 2 heterostructures without a moiré potential

Interlayer excitons (IXs) in MoSe 2 –WSe 2 heterobilayers have generated interest as highly tunable light emitters in transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. We show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We compare the doping, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe 2 –WSe 2 region to those in a region separated by bilayer hBN. The doping, electric field, and temperature dependence of the narrow IX lines are similar for both regions, but their excitonic g-factors have opposite signs, indicating that the origin of narrow IX PL is not the moiré potential.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Integrated Multiscale Modeling for Design of Robust 3D Solid-State Lithium Batteries - FY21 Annual Report

This project is developing a multiscale, multi-physics modeling framework for probing the effects of materials microstructure and device architecture on ion transport within 3D ceramic solid-state battery materials, with the goal of enhancing performance and reliability. The project has three primary objectives: (1) integrate multi physics and multiscale model components; (2) understand interface- and microstructure-derived limitations on ion transport; and (3) derive key structure-performance relations for enabling future optimization.

25 ENERGY STORAGE↗