Results for “ION BEAMS” — Page 20

DOE OSTI2023

Be 2 C synthesis, properties, and ion-beam irradiation damage characterization

This technical report is in submission of completion of the Level 2 milestone number M2AT 23OR1101022, titled “Be 2 C synthesis, properties, and ion-beam irradiation damage characterization,” for the AT-23OR110102 “Beryllium Carbide as moderator for MSRs—ORNL” WBS number 2.04.11.01 within the larger Advanced Reactor Technologies program at Oak Ridge National Laboratory. This effort is an initial study of the viability of Be 2 C as a future neutron moderator for molten salt reactors and other high-temperature reactors. The research was awarded funding in September 2022, and this Level 2 milestone presents the work that completed by the end of July 2023. This work is a collaboration between Oak Ridge National Laboratory and the University of Michigan. This report discusses the status of this effort and planned work before the final reporting.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

DOE OSTI2023

NNSA Funded 03-0016, Ion Beam Facility Characterization Compilation (Characterization Funded and Completed FY2021)

This document is the compilation of the sampling activities associated with the FY2021 NNSA funded characterization of the 03-0016, Ion Beam facility at Los Alamos National Laboratory. Included within this document are the radiological and non-radiological sampling plans, results from the executed sampling plans, areas not sampled, summary of findings for each area sampled, and anticipated waste streams.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2026

A method for estimating light quenching in inorganic scintillator detectors for radioactive ion beam experiments

In recent experiments, inorganic scintillators have been used to study the decays of exotic nuclei, providing an alternative to silicon detectors and enabling measurements that were previously impossible. However, proper use of these materials requires us to understand and quantify the scintillation process, specifically in response to very heavy nuclei. Here, in this work, we show a simplified method based on the models of Birks (1951) and Meyer and Murray (1962) to parametrize the light output of inorganic scintillators in response to beams of energetic heavy ions over a broad range of energies. We test the accuracy of our parametrization approach by calculating light output and quenching factors for various ions and comparing them with experimental data from Lutetium Yttrium Orthosilicate (LYSO:Ce), a common inorganic scintillator. The Meyer–Murray model suggests that, for sufficiently heavy ions at high energies, the majority of the light output is associated with the creation of delta electrons, which are induced by the passage of the beam through the material. These delta electrons dramatically impact the response of detection systems when subject to ions with velocities typical of beams in modern fragmentation facilities. To illustrate this, we also present a qualitative estimate of the effects of delta rays on overall light output using the Birks–Meyer–Murray parametrization. The approach presented herein will serve as a basic framework for further, more rigorous studies of scintillator response to heavy ions. This work is a crucial first step in planning future experiments where energetic exotic nuclei are interacting with scintillator detectors.

Heavy ion↗

NASA NTRS1980

Applications of ion beam technology

Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

Gelerinter, E.↗

NASA NTRS1985

The second-order theory of electromagnetic hot ion beam instabilities

The present investigation is concerned with the application of a second-order theory for electromagnetic instabilities in a collisionless plasma to two modes which resonate with hot ion beams. The application of the theory is strictly limited to the linear growth phase. However, the application of the theory may be extended to obtain a description of the beam at postsaturation if the wave-beam resonance is sufficiently broad in velocity space. Under the considered limitations, it is shown that, as in the cold beam case, the fluctuating fields do not gain appreciable momentum and that the primary exchange of momentum is between the beam and main component.

Gary, S. P.↗

NASA NTRS1985

Electromagnetic hot ion beam instabilities - Quasi-linear theory and simulation

This paper considers the quasi-linear theory of the right- and left-hand resonant electromagnetic instabilities driven by a hot ion beam streaming parallel to a magnetic field in a homogeneous Vlasov plasma. Using the single-mode approximation, the time evolutions of important parameters are obtained to show that for the range of parameters considered, reduction of the beam speed and formation of temperature anisotropies are the most significant factors in the quasi-linear stabilization process. Combining both instabilities in a quasi-linear study is found to produce a roughly equal mixture of both polarizations and relatively isotropic conditions for tenuous beam densities and low initial beam drift speeds. Computer simulations are used to compare with the quasi-linear results. The simulations justify the single-mode assumption, verify that quasi-linear changes are the means of saturation for the parameter range of concern, and check the nonlinear evolution of the system when both modes are present.

Rogers, B.↗

NASA NTRS1990

Statistical analysis of upflowing ion beam and conic distributions at DE 1 altitudes

Upflowing ion (UFI), beam, conic, and hybrid pitch angle distribution data obtained in the 8000-23,000-km altitude range by the energetic ion composition spectrometer of the DE 1 satellite during September 1981-June 1986 have been statistically analyzed. It is found that the source and transport mechanisms largely confine UFI to auroral field lines; no obvious one-to-one relationship is found between current direction and UFI source characteristics. O(+) is more efficiently accelerated than H(+) at the higher K(p) values.

Kondo, T.↗

DOE OSTI2026

Activation of methane by U + studied by guided ion beam tandem mass spectrometry and quantum chemistry

Reaction pathways of all products formed in the U + + CH 4 (CD 4 ) reaction were explored as a function of kinetic energy using guided ion beam tandem mass spectrometry and quantum chemical calculations. UH + , UC + , UCH + , UCH 2 + , and UCH 3 + (and their perdeuterated analogues) are formed in endothermic reactions. In both systems, the UCH 2 + (UCD 2 + ) dehydrogenated product was the dominant product in the low-energy region, whereas the UH + (UD + ) hydride product became predominant at high energies. The kinetic energy behavior of the various products is consistent with a common intermediate of H–U + –CH 3 (D–U + –CD 3 ). Here, the kinetic energy dependence of all product cross sections was modeled to obtain experimental bond dissociation energies at 0 K (in eV): D 0 (U + –H) = 2.42 ± 0.10, D 0 (U + –C) = 3.95 ± 0.12, D 0 (U + –CH) = 4.91 ± 0.09, D 0 (U + –CH 2 ) = 4.11 ± 0.04, and D 0 (U + –CH 3 ) = 2.41 ± 0.09. Quantum chemical calculations using the UCCSD(T) and UB3LYP approaches with the cc-pwCVXZ-PP basis set with MDF-60 pseudopotential for U + and the aug-cc-pCVXZ and aug-cc-pVXZ (X = T, Q) basis set for carbon and hydrogen, respectively, validate the experimental bond dissociation energies and outline the potential energy surface for all reactions observed. In addition, spin–orbit corrections of the bond energies for all products were calculated at a CASSCF-CASPT2-RASSI level.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Development of hard masks for reactive ion beam angled etching of diamond

Diamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times. We evaluated different mask materials for RIBAE of diamond photonic crystal nanobeams and waveguides, and how their thickness, selectivity, aspect ratio and sidewall smoothness affected the resultant etch profiles and optical performance. We found that a thick hydrogen silesquioxane (HSQ) layer on a thin alumina adhesion layer provided the best etch profile and optical performance. The techniques explored in this work can also be adapted to other bulk materials that are not available heteroepitaxially or as thin films-on-insulator.

36 MATERIALS SCIENCE↗

DOE OSTI2020

14 MeV DT Neutron Test Facility at the Sandia Ion Beam Laboratory

A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

36 MATERIALS SCIENCE↗

NASA NTRS1985

Tribological properties of boron nitride synthesized by ion beam deposition

The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

Miyoshi, K.↗

NASA NTRS1985

Tribological properties of boron nitride synthesized by ion beam deposition

The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

Miyoshi, K.↗

DOE OSTI2020

Guided Ion Beam and Quantum Chemical Investigation of the Thermochemistry of Thorium Dioxide Cations: Thermodynamic Evidence for Participation of f Orbitals in Bonding

Kinetic energy dependent reactions of ThO + with O 2 are studied using a guided ion beam tandem mass spectrometer. The formation of ThO 2 + in the reaction of ThO + with O 2 is observed to be slightly endothermic and also exhibits two obvious features in the cross section. These kinetic energy dependent cross sections were modeled to determine a 0 K bond dissociation energy of D 0 (OTh + - O) = 4.94 ± 0.06 eV. This value is slightly larger but within experimental uncertainty of less precise previously reported experimental values. The higher energy feature in the ThO 2 + cross section was also analyzed and suggests formation of an excited state of the product ion lying 3.1 ± 0.2 eV above the ground state. Additionally, the thermochemistry of ThO 2 + was explored by quantum chemical calculations, including a full Feller-Peterson-Dixon (FPD) composite approach with correlation contributions up to CCSDT(Q) and four-component spin-orbit corrections, as well as more approximate CCSD(T) calculations including semiempirical estimates of spin-orbit energy contributions. The FPD approach predicts D 0 (OTh + -O) = 4.87 ± 0.04 eV, in good agreement with the experimental value. Analogous FPD results for ThO+, ThO, and ThO 2 are also presented, including ionization energies for both ThO and ThO 2 . The ThO 2 + bond energy is larger than those of its transition metal congeners, TiO 2 + and ZrO 2 + , which can be attributed partially to an actinide contraction, but also to contributions from the participation of f orbitals on thorium that are unavailable to the transition metal systems.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2020

Superconducting films of MgB 2 via ion beam mixing of Mg/B multilayers

The growth of smooth superconducting MgB 2 films in a non-epitaxial regime is challenging. Here, we study the formation of superconducting MgB 2 films by solid-phase reactive inter-diffusion of sputter-deposited Mg/B multilayers, employing ion beam mixing to disperse the multilayers prior to thermal annealing. The multilayers are intermixed by room-temperature bombardment with 500 keV Xe ions to doses up to 4 × 10 16 cm –2 , followed by thermal annealing to form MgB 2 . Results show that such an intermixing step leads to a dramatic reduction in surface roughness of superconducting films. However, lattice defects produced by ion bombardment reduce the critical superconducting transition temperature, an effect which scales monotonically with ion dose. The critical temperature can be recovered by an additional defect annealing step at $700\ ^{\circ}{\rm C}$.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS1992

Precipitation of fast ion beams from the plasma sheet boundary layer

This paper presents a model of precipitated fluxes from the PSBL and CPS. Simulation results and data from Aureol-3 spacecraft indicate the presence of velocity dispersed precipitated ion structures (VDIS) at the poleward edge of the auroral oval. These structures are associated with fast ion beams in the PSBL region of the earth's magnetotail, confirming previous experimental results. The simulations also reveal possible substructuring of the VDIS. The bulk of the PSBL population which is not precipitated is very effectively thermalized and quasi-isotropized after multiple interactions with the magnetotail current layer. After each reflection cycle some part of the distribution is precipitated and forms multiple 'echoes' of VDIS. The CPS distributions occurring as a result of scattering, convection, multiple reflections and Fermi acceleration appear isotropic in the simulation model. This paper portrays the important role of the VDIS auroral region medium for complicated and energetically significant processes occurring in different regions of the distant magnetotail.

Ashour-Abdalla, M.↗