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At least 361 records · Page 20

Microstructure-Dependent Rate Theory Model of Radiation-Induced Segregation in Binary Alloys

Conventional rate theory often uses the mean field concept to describe the effect of inhomogeneous microstructures on the evolution of radiation induced defect and solute/fission product segregation. However, the spatial and temporal evolution of defects and solutes determines the formation and spatial distribution of radiation-induced second phase such as precipitates and gas bubbles/voids, especially in materials with complicated microstructures and subject to high dose radiation. In this work, a microstructure-dependent model of radiation-induced segregation (RIS) has been developed to investigate the effect of inhomogeneous thermodynamic and kinetics properties of defects on diffusion and accumulations of solute A in AB binary alloys. Four independent concentrations: atom A, interstitial A, interstitial B, and vacancy on [A, B] sublattice are used as field variables to describe temporal and spatial distribution and evolution of defects and solute A. The independent concentrations of interstitial A and interstitial B allow to describe their different generation rates, thermodynamic and kinetic properties, and release the assumptions of interstitial generation and sink strength used in the conventional rate theory. Microstructure and concentration dependent chemical potentials of defects are used to calculate the driving forces of defect diffusions. With the model, the effects of defect chemical potentials and mobilities on the RIS in polycrystalline AB model alloys have been simulated. The results demonstrated the model capability in predicting defect evolution in materials with inhomogeneous thermodynamic and kinetic properties of defects. The model can be extended to materials with complicated microstructures such as a wide range of grain size distribution, coating structure and multiphases as well as radiation-induced precipitation subject to severe radiation damage.

36 MATERIALS SCIENCE↗

Strain effects on oxygen transport in tetragonal zirconium dioxide

Temperature accelerated dynamics and molecular dynamics simulations are used to investigate the strain effects on oxygen interstitial and vacancy migration in tetragonal zirconium dioxide. At zero external strain, the anisotropic migration mechanisms of oxygen defects are characterized. At non-zero strains, both the crystal structure and defect migration barriers are modified by strain. Under compressive strains, the defect migration barrier increases with the increasing strain for both interstitials and vacancies. The crystal structure transforms from a tetragonal to a nearly cubic fluorite structure. Accordingly, the defect migration becomes nearly isotropic. Under dilative strains, the migration barrier first decreases then increases with increasing strain for both types of defects. The tetragonal phase transforms to a lower symmetry structure that is close to the orthorhombic phase. In turn, the defect migration becomes highly anisotropic. Under both compressive and dilative strains, interstitials respond to strain more strongly than vacancies. At small dilative strains, an oxygen interstitial has comparable diffusivity to a vacancy, suggesting that both types of defects can contribute to oxygen transport, if they are present. Although currently no previous result is available to validate oxygen interstitial diffusion behavior, the trend of strain effects on oxygen vacancy diffusion is in good agreement with available experimental and theoretical studies in the literature.

36 MATERIALS SCIENCE↗

Casting core for a cooling arrangement for a gas turbine component

A ceramic casting core, including: a plurality of rows (162, 166, 168) of gaps (164), each gap (164) defining an airfoil shape; interstitial core material (172) that defines and separates adjacent gaps (164) in each row (162, 166, 168); and connecting core material (178) that connects adjacent rows (170, 174, 176) of interstitial core material (172). Ends of interstitial core material (172) in one row (170, 174, 176) align with ends of interstitial core material (172) in an adjacent row (170, 174, 176) to form a plurality of continuous and serpentine shaped structures each including interstitial core material (172) from at least two adjacent rows (170, 174, 176) and connecting core material (178).

42 ENGINEERING↗

Magnetic and Transport Properties of Co{sub 1+δ}Sb Single Crystals

For some 3d transition-metal monopnictides, their physical properties are strongly affected by interstitial 3d transition-metal atoms, such as Fe{sub 1+δ}Sb, in which the electrical transport, magnetic properties and carrier concentrations have strong dependence on the composition of interstitial Fe (Shiomi et al. Phys. Rev. Lett. 108(5), 056601 2012), Therefore, it is important to study the influence of interstitial Co on the physical properties of Co{sub 1+δ}Sb. Here, the magnetic and transport properties have been studied on Co{sub 1.05}Sb single crystals. The magnetic and electrical transport measurements reveal that stoichiometric CoSb is a nonmagnetic metal. The interstitial Co in this compound exhibits a paramagnetic behaviour and weak antiferromagetic correlations. However, it has no effect on transport properties. A very low magnetoresistance (≤ 0.2%) was observed under the magnetic field up to 14 T, which suggests that Co{sub 1+δ}Sb could be a potential material of electronic devices for the application at a high magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced Electronic Conductivity by Controlled Self-Doping in Pyrochlores

Most 5d transition-metal (TM) pyrochlores exhibit metallic behavior, but 3d and 4d TM pyrochlores are generally electronic semiconductors or insulators. Here, we report a semiconductor–metal transition induced by introducing excess Ti metal as interstitials into Y2Ti2O7. These Ti interstitials prefer anion vacant 8a sites or bridge sites between two neighboring cations along the h010i direction. Density functional theory calculations suggest that an increased electronic conductivity originates from the interplay between the extra Ti and its neighboring cations. These findings suggest a means for achieving metallic behavior in semiconducting pyrochlore oxides and tuning the electronic conduction in pyrochlores for their electrochemical applications in solid oxide fuel cells.

Environmental Molecular Sciences Laboratory↗

Impact of Point Defects on Electronic Structure in Y₂Ti₂O₇

With many technologies and applications downscaling to nanometer dimensions, the influence of single point defects on electronic structure has shown an increasingly profound impact on optical and electrical properties, and advancing fundamental understanding is critical to defect engineering and control of materials properties. In the present study, first-principles calculations based on density functional theory (DFT) are carried out to study the effects of Ti point defects on the electronic structure of Y₂Ti₂O₇. In the literature, it has been demonstrated that conventional DFT tends to produce delocalized holes and electrons in defective oxide materials due to insufficient cancellation of the self-interaction energy and underestimation of the band gap, which results in an incorrect description of the electronic structure of the system. In an effort to better understand the accuracy of DFT in describing the behavior of Y₂Ti₂O₇ with point defects, the calculated results obtained from DFT and DFT+U methods are compared, including the geometrical distortion, the localization of the defect states and the position of the defect levels in the band gap. Using DFT, distorted geometries around the Ti vacancy and interstitial are found, along with localized oxygen holes and Ti electrons, both of which compare well with the DFT+U results, suggesting that the conventional DFT can be used to describe the localization of the Ti defects in Y₂Ti₂O₇. One major difference in the DFT and DFT+U calculations is the energy position of the defect levels, for which DFT+U results in the states positioned deep in the band gap. Since the DFT+U method suffers from the dependence of the results on the empirical parameter U and no experimental results on the energy position of the defect states are available to tune this U value, care must be taken in applying DFT+U to electronic structure calculations of Y₂Ti₂O₇ with point defects. Based on the DFT method, the most preferred charge state is determined by the formation energies for charged point defects. Moving the Fermi level across the band gap has slight effects on the charge state, and the Ti vacancy and interstitial are found to be in 24 and +4 charge states, respectively.

Environmental Molecular Sciences Laboratory↗

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

36 MATERIALS SCIENCE↗

Defect interactions with stepped CeO{sub 2}/SrTiO{sub 3} interfaces: Implications for radiation damage evolution and fast ion conduction

Due to reduced dimensions and increased interfacial content, nanocomposite oxides offer improved functionalities in a wide variety of advanced technological applications, including their potential use as radiation tolerant materials. To better understand the role of interface structures in influencing the radiation damage tolerance of oxides, we have conducted atomistic calculations to elucidate the behavior of radiation-induced point defects (vacancies and interstitials) at interface steps in a model CeO{sub 2}/SrTiO{sub 3} system. We find that atomic-scale steps at the interface have substantial influence on the defect behavior, which ultimately dictate the material performance in hostile irradiation environments. Distinctive steps react dissimilarly to cation and anion defects, effectively becoming biased sinks for different types of defects. Steps also attract cation interstitials, leaving behind an excess of immobile vacancies. Further, defects introduce significant structural and chemical distortions primarily at the steps. These two factors are plausible origins for the enhanced amorphization at steps seen in our recent experiments. The present work indicates that comprehensive examination of the interaction of radiation-induced point defects with the atomic-scale topology and defect structure of heterointerfaces is essential to evaluate the radiation tolerance of nanocomposites. Finally, our results have implications for other applications, such as fast ion conduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Point defect states in Sb-doped germanium

Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to strongly favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.

36 MATERIALS SCIENCE↗

Simulating dislocation loop internal dynamics and collective diffusion using stochastic differential equations

Nanoscale prismatic loops are modeled via a partial stochastic differential equation that describes an overdamped continuum elastic string, with a view to describing both the internal and collective dynamics of the loop as a function of temperature. Within the framework of the Langevin equation, expressions are derived that relate the empirical parameters of the model, the friction per unit length, and the elastic stiffness per unit length, to observables that can be obtained directly via molecular-dynamics simulations of interstitial or vacancy prismatic loop mobility. The resulting expressions naturally exhibit the properties that the collective diffusion coefficient of the loop (i) scales inversely with the square root of the number of interstitials, a feature that has been observed in both atomistic simulation and in situ TEM investigations of loop mobility, and (ii) the collective diffusion coefficient is not at all dependent on the internal interactions within the loop, thus qualitatively rationalizing past simulation results showing that the characteristic migration energy barrier is comparable to that of a single interstitial, and cluster migration is a result of individual (but correlated) interstitial activity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

36 MATERIALS SCIENCE↗

Oxygen diffusion in UO 2+x and (U,Pu)O 2±x

In the first part of this report we revisit an earlier study of oxygen diffusion in UO 2+x , in which we used density functional theory (DFT) calculations to parameterize a kinetic Monte Carlo (kMC) model. The results from these earlier kMC simulations are reproduced in Fig. 1 and they indicate fairly good agreement with available experiments. This work was later expanded to include a larger temperature range. However, since the publication of this study there have been a number of advancements in DFT methodology for UO 2 and UO 2+x providing increased accuracy. We have also gained better understanding of the oxygen clustering phenomena occurring in UO 2+x . For these two reasons, the DFT calculations of the migration barriers of single oxygen interstitials and di-interstitial clusters have been repeated using the LDA+U and GGA+U methodologies. The earlier study used regular GGA and, even though this method captures similar trends as the more advanced LDA+ U and GGA+ U techniques, it does not fulfill the quantitative requirements set by some applications. Additionally, we have identified a mechanism for the most stable quad-interstitial clusters to migrate and here we calculate the corresponding barriers within both the LDA+ U and GGA+ U methodologies. The new LDA+ U and GGA+ U data sets are analyzed in terms of available experiments. In the second part of this report we present initial results for the impact of Pu on oxygen diffusion in UO 2 . The first step in understanding this process is to calculate the binding energies of oxygen vacancies and interstitials to a Pu ion in the UO 2 matrix. Possible diffusion mechanisms are discussed for (U,Pu)O 2-x , (U,Pu)O 2 and (U,Pu)O 2+x .

36 MATERIALS SCIENCE↗

Generalized Rate Theory for Void and Bubble Swelling and its Application to Plutonium Metal Alloys

In the classical rate theory for void swelling, vacancies and self-interstitials are produced by radiation in equal numbers, and in addition, thermal vacancies are also generated at the sinks, primarily at edge dislocations, at voids, and at grain boundaries. In contrast, due to the high formation energy of self-interstitials for normal metals and alloys, their thermal generation is negligible, as pointed out by Bullough and Perrin. However, recent DFT calculations of the formation energy of self-interstitial atoms in bcc metals have revealed that the sum of formation and migration energies for self-interstitials atoms (SIA) is of the same order of magnitude as for vacancies. The ratio of the activation energies for thermal generation of SIA and vacancies is presented. For fcc metals, this ratio is around three, but for bcc metals it is around 1.5. Reviewing theoretical predictions of point defect properties in δ-Pu, this ratio could possibly be less than one. As a result, thermal generation of SIA in bcc metals and in plutonium must be taken into considerations when modeling the growth of voids and of helium bubbles, and the classical rate theory (CRT) for void and bubble swelling must be extended to a generalized rate theory (GRT).

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Which parameters might help to predict an impact on reactivity for mixed fissile units in a storage array?

Several studies have already been performed on mixed fissile units in storage arrays and concluded that the neutron spectrum of the fissile material, the shape of fissile units, the interstitial moderation and structural materials may have an impact on reactivity. For this paper, calculations are performed on a simplified infinite planar array with one level of fissile material units axially reflected by concrete. Fissile material is modelled by a cylinder shape centered in the array mesh selected (120 cm height and 60 cm pitch). Either air or interstitial moderation by water is modelled between the fissile units. Three parameters are studied: the fissile materials (with various moderation conditions), the cylinder dimension and the nature of the structural material. The main following conclusions can be drawn from these calculations. First, for several mixed-array cases, air-spaced mixed arrays present a high increase on reactivity whereas interstitial moderation between fissile units leads to no or little impact. Secondly, fissile unit shapes do not explain directly the mixing impact on reactivity. Thirdly, structural materials have an important impact on reactivity in mixed array (either an increase or a decrease) due to their absorbing and/or moderating properties either when air or interstitial moderation are modelled between fissile units. Fourthly, no simple parameter was found to predict the impact on reactivity of mixed array in all studied configurations. However, a comparison of different neutron spectrum parameters can help to predict the absence or potential presence of a 'mixing effect'. Indeed, if all parameters are similar, no 'mixing effect' is observed. But, if these parameters present differences, there might be a 'mixing effect'. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Kinetic Monte Carlo Simulation of Hydrogen Diffusion in Tungsten

Nuclear fusion is considered as the most promising sustainable energy source. If achieved, it could provide electricity to the mankind for millions of years. During the reaction, the fusion ash is continuously removed from the magnetic gap, the divertor region, and the divertor facing component is subjected to intense plasma bombardment. It is proposed to use tungsten as the divertor facing material, because it has low physical sputtering yield and superior thermomechanical properties. However, the high mobility of hydrogen in tungsten and the high bombardment flux bring the hydrogen isotopes deep into the tungsten tile. The presence of hydrogen in tungsten tends to weaken the gram boundaries and produce surface blistering. The ejection of tungsten particulates into the plasma core will cool the reaction and cease the fusion reactions. Therefore, it is important to have a detailed understanding of the hydrogen diffusion in tungsten bulk. The KMC method is a stochastic computer simulation to predict the time evolution of a certain system. Typically, at a given time, the system will evolve through a few possible paths with known probabilities. In each step, the KMC method analyzes the entire system and randomly determines the system evolving events based on all transition rates of all possible events and advance the physical time. This process is repeated till the simulation of the entire physical time is completed. In previous work, the authors developed a kinetic Monte Carlo (KMC) algorithm and program to simulate hydrogen diffusion process on tungsten reconstructed surface. In this article, this KMC method is extended to model the hydrogen diffusion in tungsten bulk. The diffusion coefficients are calculated and fitted to the Arrhenius equation. The result matches the experiment measurement very well. KMC diffusion simulation needs the locations of the hydrogen trapping sites, diffusion paths and the corresponding diffusion energy barriers. The hydrogen interstitial sites in tungsten crystal have been thoroughly studied by density function theory (DFT) and molecular dynamics (MD). Johnson and Carter used DFT to determine the preferred location of the hydrogen interstitial sites m tungsten crystal, which are the tetrahedral sites (T-sites) in body-centered-cubic (bcc) lattice surfaces. All T-sites are located on the surfaces of a lattice cell. There are four T-sites per surface and twelve T-sites per lattice cell. The hydrogen atoms diffuse by traveling from one T-site to one of its nearest four T-site neighbors. Thus, each T-site is surrounded by two neighbors on the same surface, and one neighbor on each of the two adjacent surfaces perpendicular to the surface holding the center T-site. The diffusion barrier between two neighboring T-sites was calculated to be 0.38 eV. Knowing the diffusion path, energy barrier, and the crystal structure, the KMC simulation is readily to be performed. Based on other researchers' DFT calculations, the hydrogen stable interstitial site in tungsten bulk is determined as the tetrahedral site on the surface of the bee lattice. Each T-site has 4 neighbors and the energy barrier between two adjacent T-sites are estimated to be 0.38 eV. Based on those facts and the KMC theory, a MATLAB program is developed to model the hydrogen diffusion in tungsten bulk. In the MATLAB program, substrate temperature, hydrogen concentration, physical time to be simulated, and the number of cycles are all customizable. To compare the KMC determined diffusion coefficients with experiment results in the literature, the simulations are performed for temperature 300 K - 2500 K and low hydrogen concentration (0.1%), mimicking the experiment condition. The calculated diffusion coefficients match the reference values measured by the experiment under low hydrogen concentration condition. The results are also fitted to the Arrhenius equation. The pre-exponential factor and the average activation energy in Arrhenius equation are obtained. The good agreement between simulation and experiment proves that the developed KMC algorithm truly reflect the well-established theory of interstitial hydrogens in tungsten. The developed program could easily be used to model the diffusion process and predict the diffusion coefficients under other concentrations and temperatures. This work is part of the ongoing development of hydrogen diffusion in tungsten integrating surface diffusion (previous work), bulk diffusion (this work), and adsorption/desorption on surface (future work)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Scaling laws and stability of nano-sized defect clusters in niobium via atomistic simulations and statistical analysis

The predictions of scaling laws for the structure and properties of defect clusters are generally limited to small defect clusters in their ground-state configurations. We investigated the size and geometrical configuration dependence of nano-sized defect clusters in niobium (Nb) using molecular dynamics. We studied the structure and stability of large clusters of size up to fifty defects for vacancies and one hundred defects for interstitials, as well as the role of helium and metastable configurations on the stability of these clusters. We compared three different interatomic potentials in order to determine the relative stability of these clusters as a function of their size and geometrical configurations. Additionally, we conducted a statistical analysis to predict the formation and binding energies of interstitial clusters as a function of both their size and configuration. We find that the size dependence of vacancy and interstitial clusters can be approximated by functional forms that account for bulk and surface effects as well as some considerations of elastic interactions. We also find that helium and metastable configurations can make vacancy and interstitial clusters thermally stable depending on the configuration. Our parameterized functional forms for the formation and binding energies are valid for a very broad range of defect sizes and configurations making it possible to be used directly in a coarse-grained modeling strategy such as Monte Carlo, cluster dynamics or dislocation dynamics which look at defect accumulation and evolution in microstructures.

36 MATERIALS SCIENCE↗