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At least 361 records · Page 20

Making ultrastrong steel tough by grain-boundary delamination

Developing ultrahigh-strength steels that are ductile, fracture resistant, and cost effective would be attractive for a variety of structural applications. We show that improved fracture resistance in a steel with an ultrahigh yield strength of nearly 2 gigapascals can be achieved by activating delamination toughening coupled with transformation-induced plasticity. Delamination toughening associated with intensive but controlled cracking at manganese-enriched prior-austenite grain boundaries normal to the primary fracture surface dramatically improves the overall fracture resistance. As a result, fracture under plane-strain conditions is automatically transformed into a series of fracture processes in “parallel” plane-stress conditions through the thickness. The present “high-strength induced multidelamination” strategy offers a different pathway to develop engineering materials with ultrahigh strength and superior toughness at economical materials cost.

36 MATERIALS SCIENCE↗

The effect of grain boundaries on the resistivity of polycrystalline silicon

The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

Fripp, A. L., Jr.↗

CBr4 vapor growth morphologies near the polymorphic transition point. I - Single crystals. II - Crystals with large-angle grain boundaries

High-resolution microscopy and image processing were used to investigate morphological changes in CBr4 single crystals during growth from the vapor at various levels of supersaturation and at temperatures below the compound's polymorphic phase transition. It was found that, as the temperature increased at fixed supersaturations, the corners of the crystals became rounded as a result of thermal roughening; the rounding temperatures were different for crystallographically different corners. A study of CBr4 crystals with large-angle grain boundaries or twin boundaries (extended macrodefects), conducted at the temperature of polymorphic phase transition showed that the phase transition temperature, T(tr) and crystal surface morphology of these crystals depended on the presence or absence of extended macrodefects. Unlike the case of a perfect single crystal, where the T(tr) was about 46.75 C, the phase transition in crystals with extended macrodefects occurred significantly below 46.75.

Xiao, Rong-Fu↗

Correlation of critical current density to quasi-biaxial texture and grain boundary cleanliness in fully dense Bi-2212 wires

The distinctive quasi-biaxial texture of Bi 2 Sr 2 CaCu 2 O x (Bi-2212) plays an important role in enabling high critical current density ($J_c$) in Bi-2212 round wires (RWs). Here we studied three over pressure heat treated wires with $J_c$ varying by a factor of ~10, all being fully dense. Using electron backscatter diffraction, we observed the differences in biaxial texture in these three wires. Transmission electron microscopy also revealed differences in grain boundary (GB) cleanliness and connectivity. These analyses showed that high $J_c$ is unambiguously correlated to the best biaxial texture, which is in turn correlated to slow cooling from the liquid melt into solid Bi-2212. However, at 4.2 K, there is a negligible difference in intragrain pinning in the three wires, suggesting that the $J_c$ variation by a factor of ~10 is primarily due to variable filament and intergrain connectivity. In this work, the principal determinants of intergrain connectivity is the quasi-biaxial texture and GB cleanliness. Overall, $J_c$ optimization of the Bi-2212 RW is a complex multi-variable process, but this study shows that maximizing the biaxial texture quality is an important first step in such an optimization process.

36 MATERIALS SCIENCE↗

Enhanced strength of nano-polycrystalline diamond by introducing boron carbide interlayers at the grain boundaries

Polycrystalline diamond with high mechanical properties and excellent thermal stability plays an important role in industry and materials science. However, the increased inherent brittle strength with the increase of hardness has severely limited its further widespread application. In this work, we produced well-sintered nano-polycrystalline (np) diamond by directly sintering fine diamond powders with the boron carbide (B 4 C) additive at high pressure and high temperatures. The highest hardness value of up to ~90 GPa was observed in the np-diamond (consisting of fine grains with a size of 16 nm) by adding 5 wt% B 4 C at 18 GPa and 2237 K. Moreover, our results reveal that the produced samples have shown noticeably enhanced strength and toughness (18.37 MPa m 0.5 ) with the assistance of the soft phase at the grain boundaries, higher than that of the hardest known nano-twined diamond by ~24% and a little greater than that of the toughest CVD diamond (18 MPa m 0.5 ). We report this study offers a novel functional approach in improving and controlling the hardness and stiffness of polycrystalline diamond.

36 MATERIALS SCIENCE↗

Effects of polymer grain boundary passivation on organic–inorganic hybrid perovskite field-effect transistors

Despite successful applications of solution-processed organic–inorganic hybrid perovskites (OIHPs) such as archetypical methylammonium lead iodide (MAPI) in high-performance optoelectronic devices including solar cells and light emitting diodes, their application in field-effect transistors (FETs) remains relatively limited due to the unresolved issues caused by ion migration in OIHPs, such as screening of gate electric fields, lowered device on-off ratios and field-effect mobility, and large hysteresis in the FET transfer characteristics. Here, we report improved performances of the MAPI-based FET via a polymer-additive-based grain boundary (GB) passivation approach that suppresses the ion migration. Polycaprolactone (PCL) was incorporated into the MAPI FET as a GB-passivation additive as confirmed by scanning electron and atomic force microscopies. Unlike the typical n-type behavior and large transfer hysteresis in the starting, pristine MAPI FETs, the GB passivation by PCL led to a drastically reduced hysteresis in FET transfer characteristics, while hinting at an ambipolar transport and slight improvement in mobility, indicating a reduced ion migration in the PCL-incorporated MAPI FET. The effect of PCL GB passivation in suppressing ion migration was directly confirmed by the measured, increased activation energy for ion migration in the PCL-incorporated MAPI. Here, the results not only represent the first report of the polymer-additive-based mitigation of the ion migration in the MAPI FET but also suggest potential utilities of the approach for enabling high-performance OIHP FETs and electronic devices in general.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

In-service corrosion and grain boundary oxidation in neutron-irradiated 316 stainless steel baffle-former bolts

Reactor core internal components such as baffle-former bolts (BFBs) are subjected to significant mechanical stress, corrosive environment, and neutron irradiation from the reactor core during the plant operation. Over the long operation period, these conditions lead to potential degradation and of the bolts. In this work, characterization was performed on the oxidized surface of stainless steel BFBs harvested from a commercial pressurized water reactor (PWR) after 40 years of operation. The analysis shows that a complex multilayered surface oxide with six identified layers formed that is different from 2-layer structure commonly observed in model experiments. The oxide varies by composition – predominantly Fe, Cr, and Ni, grain size, and phase, and has features resembling both unirradiated and radiation/ corrosion experiments likely due to the low radiation flux compared to ion-irradiation or the test reactor radiation. In addition, grain boundary oxidative attack featured a pathway for Fe and other elements to move from the metal matrix to the outermost oxide. In conclusion, the results help assess PWR lifetime extension, put into context previous experimental studies, and provide input for designing experiments combining radiation and corrosion effects.

Baffle-former bolt↗

Analysis of grain boundary phase devitrification of Y2O3- and Al2O3-doped Si3N4

The present study has the objective to show that a Fourier Transform IR (FTIR) spectrometer in a single-beam reflection mode can be used for direct comparison of fractured vs nonfractured Si3N4 surfaces. This can be done because the FTIR method permits a digital summation of nearly 1000 scans of the fracture surface. Commercial-grade Si3N4, Y2O3, and Al2O3 were used in the study. The samples were heat treated in a vacuum induction heating furnace at either 1000 C for 10 h or 1200 C for 10 h each. Use of Fourier transform IR reflection spectroscopic analysis and X-ray diffraction shows that 10 h at 1200 C is sufficient to devitrify the amorphous grain boundary phase of Si3N4 containing 15 percent Y2O3 + 2 percent Al2O3 densification aids.

Hench, L. L.↗

Quantifying leakage fields at ionic grain boundaries using off-axis electron holography

The electrical properties of interfaces in semiconductors and ionic conductors are immensely important in a wide range of applications. Electron holography is ideally suited for the direct measurement of the electrostatic potential of such interfaces. A key challenge with this approach is the contribution of the leakage field from the sample to the observed electron phase shift. This leakage field cannot be a priori independently determined and can cause an overestimation of the phase shift. In this work, we use finite element simulations to compute the three-dimensional electrostatic potential in the vicinity of an interface associated with a given interfacial charge density distribution. We then evaluate the predicted phase shift and demonstrate that the leakage field strongly affects the recovery of the projected interface potential. From the difference between the true potential and uncorrected, recovered potential, we propose a method to correct for this effect. We then demonstrate the application of this methodology to the analysis of experimental off-axis electron holography data acquired from the grain boundaries in lightly doped ceria.

36 MATERIALS SCIENCE↗

Lithification opf gas-rich chondrite regolith breccias by grain boundary and localized shock melting

The fine-grained matrices (less than 150 microns) of 14 gas-rich ordinary chondrile regolith breccias were studied in an attempt to decipher the nature of the lithification process that converted loose regolith material into consolidated breccias. It is found that there is a continuouos gradation in matrix textures from nearly completely clastic (class A) to highly cemented (class C) breccias in which the remining clasts are completely surrounded by interstitial, shock-melted material. It is concluded that this interstitial material is formed by shock melting in the porous regolith. In general, the abundances of solar-wind-implanted He-4 and Ne-20 are inversely correlated with the abundance of intenstitial, shock-melted, feldspathic material. Chondrites with the highest abundance of interstitial, melted material (class C) experienced the highest shock pressures and temperatures and suffered the most extensive degassing. It is this interstitial, feldspathic melt that lithifies and cements the breccias together; those breccias with very little interstitial melt (class A) are the most porous and least consolidated.

Bischoff, A.↗