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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Perspective—Localized Corrosion: Passive Film Breakdown vs Pit Growth Stability

A debate about the critical step in localized corrosion has raged for decades. Some researchers focus on the composition and structure of the passive film associated with the initial breakdown of the film, whereas others consider that the susceptibility to pitting is controlled by the pit growth kinetics and the stabilization of pit growth. The basis for a unified theory of pitting is presented here in which pit stability considerations are controlling under aggressive conditions (harsh electrolytes and extreme environments and/or susceptible microstructures) and the passive film properties and protectiveness are the critical factors in less extreme environments and/or for less susceptible alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Determination of Scale Bar for AGHCF Metallography Data

The DOE Nuclear Energy Advanced Reactor Technologies (ART) Fast Reactor Program (FRP) has supported the development of several databases containing information on the safety performance of fast reactors, components, and fuels. This growing collection of legacy experimental data, operating data, and analysis is available online to registered users. Metallography data represents one of the most critical types of post-irradiation examination (PIE) data being collected, organized, and archived in several ART Fast Reactor Databases (https://frdb.ne.anl.gov), including the Metallic Fuels Irradiation & Physics Database (FIPD), Out-of-Pile Transient Database (OPTD), and TREAT (the Transient Reactor Test Facility) Experimental Relational Database (TREXR). These databases contain three principal sets of metallography data. The first set comprises metallography data from Experimental Breeder Reactor-II (EBR-II) and Fast Flux Test Facility (FFTF) irradiated fuel pins examined in the Hot Fuel Examination Facility (HFEF). The second set consists of metallography data from EBR-II irradiated fuel pins examined in the Alpha-Gamma Hot Cell Facility (AGHCF). The third set includes metallography data from transient-tested fuel pins (including both out-of-pile furnace tests and TREAT tests) examined in AGHCF. Since both the second and third sets were generated in AGHCF, they are governed by identical specifications. The metallography data in the databases consist of digital images scanned from either positive or negative photographic films. To analyze the microstructure of a fuel pin, a series of preparatory steps are required, including sectioning, epoxy mounting, mechanical grinding and polishing, and etching. Following sample preparation, specimens are transferred for metallographic examination. The AGHCF and HFEF metallography data were generated using optical microscopes manufactured by Leitz and Bausch and Lomb (B&L). Images were recorded on Polaroid film at preset magnifications. Magnification verification for the Leitz and B&L metallographs was conducted every two months prior to 1989 and at least every six months from 1989 through the conclusion of the IFR program. Magnifications determined from imaging of microslide standards were compared to the instrument settings for magnifications ranging from 50× to 500×. If the magnifications determined from standards deviated from the instrument settings, adjustments were made to the bellows extension until agreement was achieved. The specifications for AGHCF and HFEF legacy metallography data have been established based on available hard-copy and digital records, most of which have been incorporated into the data repositories associated with FIPD, OPTD, and TREXR. Detailed specifications including hard-copy records, digitized records, cutting diagrams and sectioning schemes, high-magnification photographs, photomosaics (composites), information tags, scale bars, and magnification verification procedures can be found in a separate report.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

High Strength and Deformation Mechanisms of A l0.3 CoCrFeNi High-Entropy Alloy Thin Films Fabricated by Magnetron Sputtering

Recently, high-entropy alloy thin films (HEATFs) with nanocrystalline structures and high hardness were developed by magnetron sputtering technique and have exciting potential to make small structure devices and precision instruments with sizes ranging from nanometers to micrometers. However, the strength and deformation mechanisms are still unclear. In this work, nanocrystalline Al0.3CoCrFeNi HEATFs with a thickness of ~4 μm were prepared. The microstructures of the thin films were comprehensively characterized, and the mechanical properties were systematically studied. It was found that the thin film was smooth, with a roughness of less than 5 nm. The chemical composition of the high entropy alloy thin film was homogeneous with a main single face-centered cubic (FCC) structure. Furthermore, it was observed that the hardness and the yield strength of the high-entropy alloy thin film was about three times that of the bulk samples, and the plastic deformation was inhomogeneous. Our results could provide an in-depth understanding of the mechanics and deformation mechanism for future design of nanocrystalline HEATFs with desired properties.

36 MATERIALS SCIENCE↗
NASA NTRS2009

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

Skuza, J. R.↗
DOE OSTI2014

Effects of B additions in FePt and FePt:C films

B was co-sputtered with FePt films, leading to a granular structure; however, in addition to segregating at grain boundaries, local bonding of Fe-B was formed, which suppressed the ordering of FePt and thus degraded the perpendicular anisotropy. A boron capping layer was deposited on FePt:C (28 vol. %) films and B diffused into FePt:C grain boundaries during post-annealing. FePt:(B, C) films revealed a reduced grain size of 5.5 nm and perpendicular coercivity of 2T. Co-additions of B and C into FePt films may provide an alternative tuning knob to manipulate the microstructure and magnetic anisotropy of FePt films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Fabrication and Analysis of Tri-layer YBa{sub 2}Cu{sub 3}O{sub 7−δ} Thick Films by Low-Fluorine MOD Method

Improving the thickness of superconducting layer in coated conductors is an effective way to enhance its critical current. In this work, tri-layer YBCO/YBCO/YDyBCO films were successfully deposited on buffered Hastelloy substrate using the multi-coating lowfluorine metal-organic decomposition (LF-MOD) method and the thickness of the films can be up to 2.4 μ m. The effects of high-temperature annealing time on microstructures and superconducting properties of the films were systematically studied. Energy dispersive X-ray spectroscopy (EDS) results reveal that there remains a large amount of F element in the upper layer of the film when the annealing time is too short. With increasing the annealing time, the fluoride-containing precursor converts to YBCO grains completely. But the coarsening of grains appeared, and the critical current density (J{sub c}) of the film dropped slightly when the annealing time is too long. The cross-sectional scanning electron microscope (SEM) image and EDS plane analysis were applied to investigate the microstructure and element distribution of the final triple-layer YBCO films, respectively. The critical current of the final YBCO superconducting film could reach 316 A (77 k, self-field) for 1.2-cm-wide tapes with the optimal annealing conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Energy bandgap variation in oblique angle-deposited indium tin oxide

Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Multi-nanolayered VO2/Sapphire Thin Film via Spinodal Decomposition

Coating of VO2-based thin film has been extensively studied for fabricating energy-saving smart windows. One of the most efficient ways for fabricating high performance films is to create multinanolayered structure. However, it has been highly challenge to make such layers in the VO2-based films using conventional methods. In this work, a facile two-step approach is established to fabricate multilayered VO2-TiO2 thin films. We first deposited the amorphous thin films upon sputtering, and then anneal them to transform the amorphous phase into alternating Ti- and V-rich multilayered nanostructure via a spinodal decomposition mechanism. In particular, we take advantage of different sapphire substrate planes (A-plane (11–20), R-plane (1–102), C-plane (0001), and M-plane (10-10)) to achieve different decomposition modes. The new approach has made it possible to tailoring the microstructure of the thin films for optimized performances by controlling the disorder-order transition in terms of both kinetic and thermodynamic aspects. The derived thin films exhibit superior optical modulation upon phase transition, significantly reduced transition temperature and hysteresis loop width, and high degradation resistance, these improvements indicate a high potential to be used for fabricating the next generation of energy saving smart windows.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The local environment of cobalt in amorphous, polycrystalline and epitaxial anatase TiO{sub 2}:Co films produced by cobalt ion implantation

Amorphous, polycrystalline anatase and epitaxial anatase TiO{sub 2} films have been implanted with 5 at. % Co{sup +}. The magnetic and structural properties of different microstructures of TiO{sub 2}:Co, along with the local coordination of the implanted Co atoms within the host lattice are investigated. In amorphous TiO{sub 2}:Co film, Co atoms are in the (II) oxidation state with a complex coordination and exhibit a paramagnetic response. However, for the TiO{sub 2}:Co epitaxial and polycrystalline anatase films, Co atoms have a distorted octahedral (II) oxygen coordination assigned to a substitutional environment with traces of metallic Co clusters, which gives a rise to a superparamagnetic behavior. Despite the incorporation of the implanted atoms into the host lattice, high temperature ferromagnetism is absent in the films. On the other hand, it is found that the concentration and size of the implantation-induced nanoclusters and the magnetic properties of TiO{sub 2}:Co films have a strong dependency on the initial microstructure of TiO{sub 2}. Consequently, metallic nanocluster formation within ion implantation prepared transition metal doped TiO{sub 2} can be suppressed by tuning the film microstructure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Approaching the ultimate superconducting properties of (Ba,K)Fe 2 As 2 by naturally formed low-angle grain boundary networks

The most effective way to enhance the dissipation-free supercurrent in the presence of a magnetic field for type II superconductors is to introduce defects that act as artificial pinning centers (APCs) for vortices. For instance, the in-field critical current density of doped BaFe 2 As 2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion irradiation. The technique of ion irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains with widths of approximately 30–60 nm. The grains are rotated around the b- (or a-) axis by 1.5° and around the c-axis by –1°, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetic properties and microstructure of Sm-Co/α-Fe nanocomposite thick film-magnets composed of multi-layers over 700 layers

We synthesized Sm-Co/α-Fe nanocomposite film-magnets, approximately 10 μm in thickness, composed of 780 layers by the pulse laser deposition method. Transmission electron microscopic observations revealed that the synthesized film is composed of Sm-Co and α-Fe layers with the well-controlled α-Fe thickness of approximately 10–20 nm, which is suitable one predicted by the micromagnetic simulation. In spite of the enhanced interlayer diffusion of Fe and Co by annealing for crystallization, the (BH){sub max} value of 100 kJ/m{sup 3} was obtained at the averaged compositions of Sm/(Sm + Co) = 0.16 and Fe/(Sm + Co + Fe) = 0.47. The α-Fe fraction for obtaining the highest (BH){sub max} value was smaller than that expected from the micromagnetic simulation. Although the annealing for crystallization lay the easy direction of magnetization in the plane, the film is not expected to have strong crystallographic texture.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Olivas, John D.↗
DOE OSTI2016

Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of Melt Temperature on Surface Films Formed on Molten AZ91D Alloy Protected by Graphite Powder

Graphite powder was adopted to prevent AZ91D alloy from oxidizing during melting and casting. The microstructure of the resultant surface films, formed at 933 K, 973 K, 1013 K, and 1053 K (660 °C, 700 °C, 740 °C, and 780 °C) for 30 minutes, was investigated by scanning electron microscopy, energy dispersive spectrometer, and X-ray diffraction, and the phase composition of the surface films was analyzed by the standard Gibbs free energy change of the reactions between the graphite powder, the alloy melt, and the ambient atmosphere. The effect and mechanism of melt temperature on the resultant surface films were also discussed. The results indicated that the surface films, of which the surface morphology comprised folds and wrinkles, were composed of a protective layer and MgF{sub 2} particles. The protective layer was contributive to the prevention of the molten alloy from oxidizing, and consisted of magnesium, oxygen, fluorine, carbon, and a small amount of aluminium existing in the form of MgO, MgF{sub 2}, C, and MgAl{sub 2}O{sub 4}. The layer thickness was 200 to 900 nm. The melt temperature may affect the surface films through the increased interaction between the graphite powder, the melt, and the ambient atmosphere. The oxygen content and thickness of the protective layer decreased and then increased, while the height of the folds increased with melt temperature.

36 MATERIALS SCIENCE↗
NASA NTRS2004

LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications

There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.

Maranchi, Jeffrey P.↗
DOE OSTI2019

Effect of Ti Doping on the Crystallography, Phase, Surface/interface Structure and Optical Band Gap of Ga2O3 Thin Films

The effect of titanium (Ti) doping on the crystal structure, phase, surface/interface chemistry, microstructure and optical band gap of gallium oxide (Ga2O3) (GTO) films is reported. The Ti content was varied from 0 to * 5 at% in cosputtering, using Ga2O3 ceramic and Ti metal targets, deposited GTO films produced. The sputtering power to the Ti target was varied in the range of 0–100 W, while keeping the sputtering power to Ga2O3 constant at 100 W, to produce GTO films with 0–5 at% Ti. The Ti-incorporation-induced effects were significant for the crystal structure, phase, surface/interface chemistry and morphology, which in turn induce changes in the band gap. The high-resolution core-level X-ray photoelectron spectroscopy (XPS) analyses confirm that the Ga ions exist as Ga3? in both intrinsic Ga oxide and GTO films. However, XPS data reveal the formation of Ga2O3–TiO2 films with the presence of Ti4? ions with increasing Ti sputtering power, i.e., higher Ti contents in GTO. Evidence for the formation of nanocrystalline Ga2O3–TiO2 films was also found in the structural analyses performed using electron microscopy and grazing incidence X-ray diffraction. Significant band gap reduction (Eg * 0.9 eV) occurs in GTO films with increasing Ti dopant concentration from 0 to 5 at%. A correlation between the Ti dopant concentration, surface/interface chemistry, microstructure and band gap of GTO films is established.

Manandhar, Sandeep↗
DOE OSTI2021

Radiation-Enhanced Anion Transport in Hematite

The influence of radiation-induced (1 MeV energy H+ to ~0.1 dpa at 450°C), non-equilibrium point defect populations on mass transport is studied with an integrated campaign of experimental and theoretical methods. Using epitaxial thin films of hematite with embedded 18O tracer layers and nanoscale atom probe tomography measurements, it is shown that anion self-diffusion is enhanced by at least 2 orders of magnitude under irradiation compared to thermal diffusion alone. Complementary scanning transmission electron microscopy of vacuum annealed specimens, reveals associated microstructural changes in the oxide films, including local phase transformation to Fe3O4 and the development of nanoscale voids from vacancy coalescence. Point defect formation and migration energies were computed from density functional theory and applied within the context of chemical rate theory to analyze contributions from both interstitial and vacancy mechanisms to self-diffusion in thermal and irradiation conditions. Comparisons are made between calculated, literature and newly measured self-diffusion values, revealing good agreement on the magnitude of radiation-enhanced anion diffusion. Further, the model suggests a transition from vacancy to interstitialcy mechanisms at low temperatures and high oxygen activity, consistent with the varied activation energies reported from prior studies.

iron oxides, isotopic tracers, atom probe tomograp↗